WFF8N65B
Silicon N-Channel MOSFET
Features
� � � � � � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V Ultra-low Gate charge(Typical 25nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (VISO=4000V AC) Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1)
Parameter
Value
650 7.5* 4.3* 30* ±30 590 14 4.5 48 0.38 -55~150 300
Units
V A A A V mJ mJ V/ ns W W/℃ ℃ ℃
*Drain current limited by junction temperature
Thermal Characteristics
Symbol
RQJC RQJA
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient
Value Min
-
Typ
-
Max
2.6 62.5
Units
℃/W ℃/W
Rev.A Nov.2011
Copyright@W insemi Microelectronics Co., Ltd., All right reserved.
WFF8N65B
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current Gate-source breakdown voltage
Symbol
IGSS V(BR)GSS
Test Condition
VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=650V,VGS=0V,Tc=25℃
Min
±30 650 -
Type
0.65 1.1 6.2 1120 23 115 80 30 60 125 25 6 10
Max
±100 10 100 4 1.3 1350 30 150 170 70
Unit
nA V µA µA V V/℃ V Ω S
Drain cut -off current
IDSS VDS=500V,Tc=125 ℃
Drain -source breakdown voltage Breakdown Voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Turn-On Rise time Switching time Turn-On time Turn-Off Fall time Turn-Off time Total gate charge(gate-source
V(BR)DSS ∆BVDSS/∆ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr Td(on) tf Td(off)
ID=250 µA,VGS=0V ID=250 µA, referenced to 25℃ VDS=VGS,ID=250 µA VGS=10V,ID=3.75A VDS=40V,ID=3.75A VDS=25V, VGS=0V, f=1MHz VDD=300V, ID=7.5A RG=25Ω (Note4,5) VDD=480V,
2 -
pF
ns 110 260 35 nC Gate-source charge Gate-drain("miller") Charge Qgs Qgd ID=7.5A (Note4,5) -
Qg plus gate-drain) VGS=10V,
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge
Symbol
IDR IDRP VDSF trr Qrr
Test Condition
IDR=7.5A,VGS=0V IDR=7.5A,VGS=0V, dIDR / dt =100 A / µs
Min
-
Type
315 2.6
Max
7.5 30 1.4 -
Unit
A A V ns µC
Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=19.5mH IAS=7.5A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤7.5.A,di/dt≤300A/us,VDD
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