WFF9N50
Silicon N-Channel MOSFET
Features
� � � � � 9A,500V, RDS(on)(Max0.75Ω)@VGS=10V Ultra-low Gate charge(Typical 30nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplies, power
factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1)
Parameter
Value
500 9 5.1 32 ±30 510 13 3.5 44 0.35 -55~150 300
Units
V A A A V mJ mJ V/ ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient
Value Min
-
Typ
0.5 -
Max
2.86 62.5
Units
℃/W ℃/W ℃/W
Rev.A Oct.2010
Copyright@W insemi Microelectronics Co., Ltd., All right reserved.
WFF9N50
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current Gate-source breakdown voltage
Symbol
IGSS V(BR)GSS
Test Condition
VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=500V,VGS=0V
Min
±30 -
Type
-
Max
±100 1 10
Unit
nA V µA µA V V/℃
Drain cut -off current
IDSS VDS=400V,TC=125℃
Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source
V(BR)DSS △BVDSS/ △TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg
ID=250 µA,VGS=0V ID=250µA,Referenced
500
0.57
-
to 25℃ VDS=10V,ID=250 µA VGS=10V,ID=4.8A VDS=50V,ID=4.8A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=9A RG=9.1Ω RD=31Ω VDD=400V, VGS=10V, nC ID=9A (Note4,5) 30 7 15 38 9 18 (Note4,5) 3 3.7 1018 8 155 11 23 26 19 ns pF 5 0.75 V Ω S
plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge
Symbol
IDR IDRP VDSF trr Qrr
Test Condition
IDR=9A,VGS=0V IDR=9A,VGS=0V, dIDR / dt =100 A / µs
Min
-
Type
1.4 442 2.16
Max
9 32 2.0 633 3.24
Unit
A A V ns µC
Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=9A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤300A/us,VDD
很抱歉,暂时无法提供与“WFF9N50”相匹配的价格&库存,您可以联系我们找货
免费人工找货