WFP830 WFP830
Silicon N-Channel MOSFET
Features
■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
G D S
TO220
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt To ta l Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note 2) (Note 1) (Note 3) (Note1)
Parameter
Value
500 4.5 2.9 18 ±30 300 7.5 4.5 73 0.55 -55~150 300
Units
V A A A V mJ mJ V/ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Min
-
Value Typ
0.5 -
Max
1.7 62.5
Units
℃/W ℃/W ℃/W
Rev, C Nov. 2008
Copyright@Winsemi Microelectronics Co.,Ltd.,All rights reserved.
T02-2
WFP830 WFP830
Electrical Characteristics (Tc = 25°C)
Characteristics
Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain−source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge Qg Qgs Qgd
Symbol
IGSS V(BR)GSS IDSS V(BR)DSS ΔBVDSS/ ΔTJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff
Test Condition
VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS =500 V, VGS = 0 V ID = 250 μA, VGS = 0 V ID=250μA, Referenced to 25℃ VDS = 10 V, ID =250 μA VGS = 10 V, ID = 2.25A VDS = 40 V, ID =2.25A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =250 V, ID = 4.5 A RG=25 Ω (Note4,5) VDD = 400 V, VGS = 10 V, ID = 4.5 A (Note4,5)
Min
±30 500 2 -
Type
0.55 1.16 4.2 800 18 76 15 40 85 45 32 3.7 15
Max
±100 1 4 1.5
Unit
nA V μA V V/℃ V Ω S
1050 23 100 40 90 ns 180 100 44 nC pF
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge
Symbol
IDR IDRP VDSF trr Qrr
Test Condition
IDR = 4.5 A, VGS = 0 V IDR =4.5 A, VGS = 0 V, dIDR / dt = 100 A / μs
Min
-
Type
305 2.6
Max
4.5 18 1.4 -
Unit
A A V ns μC
Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=24mH,IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤4.5A,di/dt≤300A/us, VDD
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