WFS5HB03N8

5HB03N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device V(BR)DSS QG RDS(on) 25mΩ @ VGS= 10V N-CH 30V 9.0nC 45mΩ @ VGS= 4.5V 50m Ω @ VGS= -10V P-CH -30V 12.7nC 75mΩ @ VGS= -4.5V -3.3A 3.9A -4.1A ID TA= 25°C 5.0A Description This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive. P1G P1S/P2S P2G Features • • 2 x N + 2 x P channels in a SOIC package Low voltage (VGS = 4.5 V) gate drive P1D/N1D P2D/N2D Applications • • N1G N2G DC Motor control DC-AC Inverters N1S/N2S Ordering information De Device 5HB03N8 Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Device marking WFS 5HB03N8 Issue 1.0 - April 2010 1 5HB03N8 Absolute maximum ratings Parameter Drain-Source voltage Gate-Source voltage Continuous Drain current @ VGS= 10V; TA=25°C @ VGS= 10V; TA=70°C @ VGS= 10V; TA=25°C @ VGS= 10V; TL=2 5°C Pulsed Drain current @ VGS= 10V; TA=25 °C (c) (b) (b) (b) (a) (f) Symbol VDSS VGS ID Nchannel 30 ±20 4.98 3.98 3.98 4.17 Pchannel -30 ±20 -4.13 -3.31 -3.36 -3.51 -19.6 -2.0 -19.6 Unit V V A IDM IS ISM PD PD PD Tj, Tstg 22.9 2.0 22.9 0.87 6.94 1.35 10.9 0.95 7.63 A A A W mW/°C W mW/°C Continuous Source current (Body diode) at TA =25°C Pulsed Source current (Body diode) at TA =25°C Power dissipation at TA =25°C Linear derating factor Power dissipation at TA =25°C Linear derating factor Power dissipation at TL =25°C Linear derating factor (a) (b) (f) (c) 0.98 7.81 W mW/°C °C Operating and storage temperature range -55 to 150 Thermal resistance Parameter Junction to ambient Junction to ambient Junction to ambient Junction to ambient Junction to lead NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. Same as note (a), except the device is measured at t ≤ 10 sec. Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when operating in a steady-state condition with one active die. For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when operating in a steady-state condition with one active die. Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition with one active die. Symbol (a) (b) (d) (e) Value 144 92 106 254 131 128 Unit °C/W °C/W °C/W °C/W °C/W RθJA RθJA RθJA RθJA RθJL (f) (b) (c) (d) (e) (f) Issue Issue 1.0 - April 2010 2 5HB03N8 Thermal characteristics RDS(ON) 1 -ID Drain Current (A) 10 RDS(ON) Limi ted 10 ID Drain Current (A) Limited DC 1s 100ms Note (a) 10ms 1ms 100us 1 DC 1s 100ms 10ms Note (a) Single Pulse, T amb =25°C 1ms 100us 100m 100m 10 m 0.1 Single Pulse, T amb =25°C 10m 0.1 1 10 1 10 V DS Drain-Source Voltage (V) N-channel Safe Operating Area 140 120 100 80 60 40 20 0 100µ 1m 10m 100m 1 D=0.2 Single Pulse D=0.05 D=0.1 D=0.5 -VDS Drain-Source Voltage (V) P-channel Safe Operating Area 1.0 Max Power Dissipation (W) Thermal Resistance (°C/W) One Active Die 25 x 25mm 1oz Any one active die 0.5 0.0 0 25 50 75 100 125 150 10 100 1k Pulse W idth (s) Temperature (°C) Transient Thermal Impedance One Active Die Single Pulse Tamb=25°C Derating Curve Maximum Power (W) 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse W idth (s) Pulse Power Dissipation Issue Issue 1.0 - April 2010 3 5HB03N8 N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source (a) on-state resistance Forward (a) (c) Transconductance V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 11.8 1.0 30 0.5 V µA nA V Ω S ID = 250μA, VGS= 0V VDS= 30V, VGS= 0V VGS= ±20V, VDS= 0V ID= 250μA, VDS= VGS VGS= 10V, ID= 5A VGS= 4.5V, ID= 4A VDS= 15V, ID= 5A ±100 3.0 0.025 0.045 Dynamic Capacitance (c) Input capacitance Output capacitance Reverse transfer capacitance Switching (b) (c) Ciss Coss Crss 430 101 56 pF pF pF VDS= 15V, VGS= 0V f= 1MHz Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge (c) td(on) tr td(off) tf 2.5 3.3 11.5 6.3 ns ns ns ns VDD= 15V, VGS= 10V ID= 1A RG ≅ 6Ω, Total Gate charge Gate-Source charge Gate-Drain charge Source–Drain diode Diode forward voltage Reverse recovery time (a) (c) (c) Qg Qgs Qgd 9.0 1.7 2.0 nC nC nC VDS=15V, VGS= 10V ID= 5A VSD trr Qrr 0.82 12 4.9 1.2 V ns nC IS= 1.7A, VGS= 0V IS= 2.1A, di/dt= 100A/μs Reverse recovery charge NOTES: (a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing Issue Issue 1.0 - April 2010 4 5HB03N8 N-channel typical characteristics 10V ID Drain Current (A) ID Drain Current (A) 10 4.5V 4V VGS T = 150°C 10V 4.5V 4V 3.5V VGS 10 3.5V 3V 1 3V 1 2.5V 0 .1 T = 25°C 2.5V 0.1 2V 0.01 0.1 V DS Drain-Source Voltage (V) 1 10 0.01 0.1 VDS Drain-Source Voltage (V) 1 10 Output Characteristics 10 Output Characteristics Normalised R DS(on) and VGS(th) VDS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 0 V GS = 10V ID = 5A R DS(on) ID Drain Current (A) 1 T = 150°C 0.1 T = 25°C VGS(th) VGS = VDS ID = 250uA 0.01 Typical Transfer Characteristics Drain-Source On-Resistance (Ω) 1 000 T = 25 °C V GS Gate-Source Voltage (V) 2 3 4 Tj Junction Temperature (°C) 50 100 15 0 Normalised Curves v Temperature 10 T = 150°C V GS 100 3V ISD Reverse Drain Current (A) 2.5V 1 10 1 0 .1 0.01 0.01 3.5 V 4V 4.5V 10V 0.1 T = 25°C 0.01 DS(on) 0.1 1 10 Issue Issue 1.0 - April 2010 R On-Resistance v Drain Current ID Drain Current (A) VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 1E-3 0.2 0.4 0.6 0.8 1.0 5 5HB03N8 N-channel typical characteristics –continued 60 0 10 VGS Gate-Source Voltage (V) GS 9 7 6 5 4 I D = 5A C Capacitance (pF) 40 0 30 0 CISS COSS C VDS = 15V 0 1 10 1 0 0 1 2 3 4 5 6 7 8 9 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage Q - Charge (nC) Gate-Source Voltage v Gate Charge Test circuits Current regulator QG 12V 50k Same as D.U.T VG QGS QGD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit VDS 90% VGS RG R D V DS VDD 10% VGS td(on) tr t(on) td(off) t(on) tr Switching time waveforms Switching time test circuit Issue Issue 1.0 - April 2010 6 5HB03N8 P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage Zero Gate voltage Drain current Gate-Body leakage Gate-Source threshold voltage Static Drain-Source (a) on-state resistance Forward (a) (c) Transconductance V(BR)DSS IDSS IGSS VGS(th) RDS(on) gfs 14 -1.0 -30 -0.5 V µA nA V Ω S ID = -250μA, VGS= 0V VDS= -30V, VGS= 0V VGS= ±20V, VDS= 0V ID= -250μA, VDS= VGS VGS= -10V, ID= -5A VGS= -4.5V, ID= -4A VDS= -15V, ID= -5A ±100 -3.0 0.050 0.075 Dynamic Capacitance (c) Input capacitance Output capacitance Reverse transfer capacitance Switching (b) (c) Ciss Coss Crss 670 126 70 pF pF pF VDS= -15V, VGS= 0V f= 1MHz Turn-on-delay time Rise time Turn-off delay time Fall time Gate charge (c) td(on) tr td(off) tf 1.9 3.0 30 21 ns ns ns ns VDD= -15V, VGS= -10V ID= -1A RG ≅ 6Ω Total Gate charge Gate-Source charge Gate-Drain charge Source–Drain diode Diode forward voltage Reverse recovery time (a) (c) (c) Qg Qgs Qgd 12.7 2.0 2.4 nC nC nC VDS= -15V, VGS= -10V ID= -5A VSD trr Qrr -0.82 16.5 11.5 -1.2 V ns nC IS= -1.7A, VGS= 0V IS= -2.1A, di/dt= 100A/μs Reverse recovery charge NOTES: (a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing Issue Issue 1.0 - April 2010 7 5HB03N8 P-channel typical characteristics T = 25°C 10V 4.5V 4V T = 150°C 10V 4V 3.5V 3V 2.5V -ID Drain Current (A) 3.5V 3V -ID Drain Current (A) 10 10 1 2.5V 1 2V 0.1 VGS VGS 0.01 0.1 0.1 -V DS Drain-Source Voltage (V) 1 10 0.1 -VDS Drain-Source Voltage (V) 1 10 Output Characteristics 1.6 10 GS(th) Output Characteristics V = 10V DS VGS = 10V -ID Dra in Current (A) 1.4 1.2 1.0 0.8 ID = 5A RDS(on) T = 150°C Normalised R 1 T = 25°C DS(on) and V VGS = VDS 0.6 0.4 -50 ID = 250uA VGS(th) 0.1 2.0 Typical Transfer Characteristics Drain-Source On-Resistance (Ω) -V GS Gate-Source Voltage (V) 2.5 3.0 3.5 Tj Junction Temperature (°C) 0 50 100 150 Normalised Curves v Temperature 10 T = 150°C 10 3V -I SD Reverse Drain Current (A) 2.5V T = 25°C V GS 1 1 3.5V 4V 0.1 T = 25°C 0.1 4.5V 10V 0.01 Vgs = 0V DS(on) 0.01 0.01 1E-3 0.1 1 10 0.2 0.4 0.6 0.8 1.0 Issue Issue 1.0 - April 2010 R On-Resistance v Drain Current -I D Drain Current (A) -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 8 5HB03N8 P-channel typical characteristics –continued 1000 10 -V GS Gate-Source Voltage (V) C Capacitance (pF) 800 V= f GS = 0V 1MHz 9 ID = 5A 8 7 5 4 3 2 1 0 0 5 VDS = 15V ISS COSS CRSS 400 200 0 1 10 10 15 -V - Drain - Source Voltage ( V) Q - Charge (nC) Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage Test circuits Current regulator QG 12V 0.2 F 50k Same as D.U.T VG QGS QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% V GS RG R D V DS VDD 10% VGS tr t(on) td(off) tr t(on) td(on) Pulse width 1S Duty factor 0.1% Switching time waveforms Switching time test circuit Issue Issue 1.0 - April 2010 9 5HB03N8 Packaging details - SO8 DIM Inches Min. Max. 0.069 0.010 0.197 0.244 0.157 0.050 Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27 DIM Inches Min. Max. Millimeters Min. Max. A A1 D H E L 0.053 0.004 0.189 0.228 0.150 0.016 e b c θ - 0.050 BSC 0.013 0.008 0° 0.020 0.010 8° - 1.27 BSC 0.33 0.19 0° 0.51 0.25 8° - Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue Issue 1.0 - April 2010 10