WGW15G120N

WGW15G120 WGW15G120N Low Loss IGBT Features ■ 15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=100℃ ■ low Gate charge(Typ.= 85nC) ■ NPT Technology, Positive temperature coefficient ■ Low EMI ■ Pb-free lead plating; RoHS compliant Applications ■ General purpose inverter ■ Frequency converters ■ Induction Heating(IH) ■ Uninterrupted Power Supply(UPS) G C E TO3P(N) Absolute Maximum Ratings(Tc=25℃) Symbol VCES IC ICP VGES tSC Collector-Emitter Voltage DC Collector Current Collector pulse Current Gate-Emitter Voltage Short circuit withstand time Turn-off safe area PD TJ TSTG TL Total Dissipation Operation Junction Temperature Storage Temperature Maximum Lead Temperature for Soldering Purposes VGE=10V,VCE≤1200V,TJ≤150℃ VCE≤1200V,TJ≤150℃ Tc=25℃ Tc=100℃ Tp limited by TJ Parameter Value 1200 30 15 45 ±20 10 45 150 -40 ~ 150 -50 ~ 150 300 Unit V A A A V μs A W ℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 0.6 40 Unit ℃/W ℃/W Rev.A Aug.2010 Copyright@W ins emi Microelectronics Co., Ltd., All right reserved. WGW15G120 WGW15G120N Electrical Characteristics(Tc=25℃) Characteristics Gate-body leakage current Collector-Emitter Breakdown Voltage Symbol IGES V(BR)CES Test Condition VGS=±30V,VCE=0V IC=0.5mA,VGE=0V Min 1200 - Typ 2.4 2.8 3.0 Max ±100 3.5 0.2 2.0 2.5 6.5 2600 200 140 - Unit nA V Collector-Emitter Saturation Voltage VCE(sat) IC=15A, VGE=15V Tc=125℃ Tc=150℃ - V 10 90 85 1700 128 880 25 60 20 95 58 32 26 VCE=1200V, Zero Gate Voltage Collector current ICES VGE=0V Gate threshold voltage Forward Transconductance Short Collector Current Total Gate Charge Input capacitance Reverse transfer capacitance Output capacitance Turn-on delay time Switchi ng time Turn-onRise time Turn-off delay time Turn-off Fall time Turn-on energy Turn-off energy Total swiitching energy Tc=100℃ Tc=150℃ 4.5 - mA VGE(th) gfs IC(SC) Qg Ciss Crss Coss Td(on) VCE=VGE,ID=0.6mA VCE=20V,ID=15A VGE=15V, VCE=600, tsc