WFD430

Wisdom Semiconductor WFD430/WFU430 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 1.4 Ω )@VGS=10V Gate Charge (Typical 25nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) Symbol ● 2. Drain 1. Gate ◀ ● ● ▲ 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control. D-PAK, I-PAK 2 1 3 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 500 4.0 2.4 16 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 292 4.8 5.5 48 0.38 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Value Min. - Typ. - Max. 2.6 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.50 ------10 100 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.0 A (Note 4) 2.0 -- -1.15 4.0 1.40 V Ω Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---680 85 15 900 110 20 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (Note 4, 5) VDD = 250V, ID = 5.0 A, RG = 25 Ω ----(Note 4, 5) 20 40 90 45 25 5 10 50 90 190 100 33 --- ns ns ns ns nC nC nC VDS = 400 V, ID = 5.0A, VGS = 10 V ---- Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 5.0 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21.0mH, IAS = 5.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.0A, di/dt ≤ 300µA/s, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ------ ---250 2.2 4.0 16 1.5 --- A A V ns µC Typical Characteristics 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 1 10 0 150 C 10 0 o 25 C -55 C o o 10 -1 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µ s Pulse Test 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 10 1 RDS(ON) [Ω ], Drain-Source On-Resistance VGS = 10V 4 VGS = 20V 3 IDR, Reverse Drain Current [A] 5 10 0 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test 2 ※ Note : TJ = 25℃ 1 0 3 6 9 12 15 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current 1800 VGS, Gate-Source Voltage [V] 1500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 10 VDS = 100V VDS = 250V Capacitance [pF] 1200 8 VDS = 400V Ciss 900 6 600 Coss Crss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 4 300 2 ※ Note : ID = 5.0 A 0 -1 10 0 10 0 10 1 0 4 8 12 16 20 24 28 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics (Continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 2.0 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs Temperature 5 10 2 Operation in This Area is Limited by R DS(on) 4 ID, Drain Current [A] 10 1 10 µs 100 µs 1 ms 10 ms DC ID, Drain Current [A] 3 10 0 2 10 -1 ※ Notes : 1 o o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 10 -2 10 0 10 1 10 2 10 3 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Zθ JC Thermal Response (t), 10 0 D = 0 .5 0 .2 0 .1 0 .0 5 ※ N o te s : 1 . Z θ J C t) = 2 .6 ℃ /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C t) ( 10 -1 0 .0 2 0 .0 1 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve Gate Charge Test Circuit & Waveform 5K 0Ω 1V 2 20F 0n 30F 0n Sm Tp a e ye a DT sU VS D VS G 1V 0 Q g s Q g VS G Q g d DT U 3A m Cag hr e Resistive Switching Test Circuit & Waveforms V D S R G V G S R L V D D V D S 9 0 % 1 0 V D U T V G S 1 0 % t(n d) o t r tn o t(f) df o tf o f t f Unclamped Inductive Switching Test Circuit & Waveforms L V D S I D R G 1 0 V tp BS VS D 1 -- I 2 ---------E =-- L S ---------A S A 2 B S -V VS D D D BS VS D IS A V D D I () t D V D D tp D U T V () Dt S Te i m Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v /d t c o n tr o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v /d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p Package Dimensions DPAK 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.91 ±0.10 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 0.76 ±0.10 2.30TYP [2.30±0.20] 0.89 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (0.70) (0.90) (0.10) (3.05) 6.10 ±0.20 9.50 ±0.30 2.70 ±0.20 (2XR0.25) 0.76 ±0.10 (1.00) 6.60 ±0.20 (5.34) (5.04) (1.50) MIN0.55 Package Dimensions (Continued) IPAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20 0.60 ±0.20 0.70 ±0.20 0.80 ±0.10 6.10 ±0.20 1.80 ±0.20 MAX0.96 0.76 ±0.10 9.30 ±0.30 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±0.10 16.10 ±0.30