WFP50N06

Wisdom Semiconductor WFP50N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 0.022 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175°C) Symbol ● 2. Drain 1. Gate ◀ ● ● ▲ 3. Source General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220 12 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 60 50 35 200 Units V A A A V mJ mJ V/ns W W/°C °C °C ±20 493 12.0 7.0 120 0.8 - 55 ~ 175 300 Thermal Characteristics Symbol RθJC RθCS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.5 - Max. 1.24 62.5 Units °C/W °C/W °C/W Copyright@Wisdom Semiconductor Inc., All rights reserved. WFP50N06 Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 60V, VGS = 0V VDS = 48V, TC = 125 °C VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 25.0A 60 0.07 10 100 100 -100 V V/°C uA uA nA nA ( TC = 25 °C unless otherwise noted ) Parameter Test Conditions Min Typ Max Units IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance 2.0 0.018 4.0 0.022 V Ω Dynamic Characteristics Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz 1050 460 70 1365 600 90 pF Dynamic Characteristics Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =48V, VGS =10V, ID =50A (Note 4, 5) VDD =30V, ID =25.0A, RG =25Ω (Note 4, 5) 20 100 80 85 32 8 12 50 210 170 180 42 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr ※ NOTES 1. Repeativity rating : pulse width limited by junction temperature 2. L = 230uH, IAS =50A, VDD = 25V, RG = 25Ω , Starting TJ = 25°C 3. ISD ≤ 50A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2% 5. Essentially independent of operating temperature. Parameter Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Test Conditions Integral Reverse p-n Junction Diode in the MOSFET IS =50A, VGS =0V IS=50A, VGS=0V, dIF/dt=100A/us Min. - Typ. 50 70 Max. 50 200 1.5 - Unit. A V ns uC Copyright@Wisdom Semiconductor Inc., All rights reserved. Typical Characteristics 10 2 10 1 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 2 10 1 175℃ 25℃ -55℃ 10 0 10 0 ※ Note : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 30V 2. 250µ s Pulse Test 10 -1 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.05 Drain-Source On-Resistance 10 2 VGS = 10V 0.03 VGS = 20V IDR, Reverse Drain Current [A] 0.04 R DS(O N) [Ω ], 0.02 10 1 0.01 ※ Note : TJ = 25℃ 175℃ 0 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 0.00 0 50 100 150 200 10 ID, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 3500 3000 2500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 10 VDS = 30V VDS = 48V Capacitance [pF] Coss 2000 8 Ciss 1500 1000 500 0 -1 10 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 6 4 Crss 2 ※ Note : ID = 50A 10 0 10 1 0 0 5 10 15 20 25 30 35 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics Typical Characteristics (Continued) 1.2 2.5 BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS(ON), (Normalized) Drain-Source On-Resistance 2.0 1.1 1.5 1.0 1.0 0.9 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 25.0 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 10 3 60 Operation in This Area is Limited by R DS(on) 50 ID, Drain Current [A] 10 2 100µ s 1 ms 10 ms DC ID, Drain Current [A] 40 30 10 1 20 ※ Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse o o 10 10 -1 10 0 10 0 10 1 10 2 0 25 50 75 100 125 150 175 VDS, Drain-Source Voltage [V] TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 0 Zθ JC Thermal Response (t), D = 0 .5 0 .2 0 .1 10 -1 ※ N o te s : 1 . Z θ J C t) = 1 .2 4 ℃ /W M a x . ( 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C t) ( 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve Gate Charge Test Circuit & Waveform 5K 0Ω 1V 2 20F 0n 30F 0n SmTp a e ye a DT sU V D S VS G Q g 1V 0 Q g s Q g d VS G DT U 3A m C re hg a Resistive Switching Test Circuit & Waveforms V D S R G V G S R L V D D V D S 9 0 % 1 0 V D U T V G S 1 0 % to d) (n t r tn o to df (f ) tf o f t f Unclamped Inductive Switching Test Circuit & Waveforms L V D S I D R G 1 0 V tp BS VS D 1 2 -----------E= - LS - - - - - - A -- I SA 2 B S- D VS V D D BS VS D IS A V D D I( t D) V D D t p D U T V( Dt S) Te i m Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R G S am e T ype as DUT V DD V GS • d v / d t c o n t r o lle d b y R G • I S D c o n t r o l l e d b y p u l s e p e r io d V GS ( D r iv e r ) G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD (DUT ) IR M d i/ d t B o d y D io d e R e v e r s e C u r r e n t V DS (DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lt a g e D r o p Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 (8.70) ø3.60 ±0.10 (1.70) 4.50 ±0.20 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20