AG203-86
InGaP HBT Gain Block
The Communications Edge TM Product Information
Product Features
x x x x x x x DC – 6000 MHz +8 dBm P1dB at 900 MHz +21 dBm OIP3 at 900 MHz 19.5 dB Gain at 900 MHz Single Voltage Supply Green SOT-86 SMT Package Internally matched to 50 :
Product Description
The AG203-86 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG203-86 typically provides 19.5 dB gain, +21 dBm OIP3, and +8 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 qC & is housed in a SOT-86 (micro-X) industry-standard SMT lead-free/green/RoHS-compliant package. The AG203-86 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG203-86 will work for other various applications within the DC to 6 GHz frequency range such as CATV and fixed wireless.
Functional Diagram
GND
4
RF In
1
3 RF Out
2
GND
Applications
x x x x x x Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless
Function Input Output/Bias Ground
Pin No. 1 3 2, 4
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output IP3 (2) Output IP2 Output P1dB Noise Figure Test Frequency Gain Output IP3 (2) Output P1dB Device Voltage Device Current
Typical Performance (1)
Units
MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA
¡
Min
DC
Typ
900 19.4 25 15 +20.8 +25 +8.0 3.1 1900 17.2 +20.7 +7.3 4.05 20
Max
6000
Parameter
Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure
Units
MHz dB dB dB dBm dBm dB 500 20 -25 -15 +8.1 +20.8 3.1
Typical
900 19.4 -25 -15 +8.0 +20.8 3.1 1900 17.2 -20 -15 +7.3 +20.7 3.3 2140 16.6 -16 -15 +7.2 +20.5 3.3
16.2
18.2
1. Test conditions: 25º C, Supply Voltage = +5 V, Rbias = 47.5 , 50 System. 2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
¡
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature -40 to +85 qC -55 to +125 qC +4.5 V +10 dBm +250q C
Rating
Ordering Information
Part No.
AG203-86* AG203-86G AG203-86PCB
*
Description
(lead-tin SOT-86 Pkg)
InGaP HBT Gain Block InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 Pkg)
700 – 2400 MHz Fully Assembled Eval. Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
This package is being phased out in favor of the green package type which is backwards compatible for existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
Page 1 of 6 June 2005
AG203-86
InGaP HBT Gain Block
Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 20.2 -20 -13 +8.2 +21.0 3.1 500 20.0 -25 -15 +8.1 +20.8 3.1
¡
The Communications Edge TM Product Information
Supply Bias = +5 V, Rbias = 47.5 :, Icc = 20 mA
900 19.4 -25 -15 +8.0 +20.8 3.1 1900 17.2 -20 -15 +7.3 +20.7 3.3
¡
Typical Device RF Performance
2140 16.6 -16 -15 +7.2 +20.5 3.3
2400 16.0 -16 -14 +7.2 +20.3 3.4
3500 14.1 -16 -18 +6.5
5800 10.7 -16 -15
1. Test conditions: T = 25º C, Supply Voltage = +5 V, Device Voltage = 4.05 V, Rbias = 47.5 , Icc = 20 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of -10 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
22 20
Gain vs. Frequency
0 -10 -20 -30
Return Loss
I-V Curve 40 Device Current (mA) 30 Optimal operating point 20 10 0 3.0
18 16 14 12 0 -40 C 1 +25 C +85 C 3 4
S11, S22 (dB)
Gain (dB)
S11
S22
-40
2 Frequency (GHz)
0
1
2
3
4
5
6
3.5
4.0
4.5
Frequency (GHz)
35 30 25 20
-40c +25c +85c
NF (dB)
Device Voltage (V)
25 20 15 10
Output IP3 vs. Frequency
Output IP2 vs. Frequency
5 4 3 2 1 0
Noise Figure vs. Frequency
OIP3 (dBm)
-40 C
+25 C
+85 C
OIP2 (dBm)
-40 C
+25 C
+85 C
5
15
0
0.5
1
1.5
2
2.5
3
0
200
400
600
800
1000
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
10 5
Gain (dB)
Frequency (MHz)
Output Power / Gain vs. Input Power 20 18 16 14 12 Output Power -20 -16 -12 -8 -4 Input Power (dBm) 0 4 Gain
frequency = 900 MHz
Frequency (GHz)
Output Power / Gain vs. Input Power 16
O utput Power (dBm )
P1dB vs. Frequency
16 14
Gain (dB)
frequency = 2000 MHz
14
O utput Power (dBm )
P1dB (dBm)
12 8 4 0 -4
Gain
10 6 2 -2 Output Power -6 0 4
0 -5
-40 C +25 C +85 C
12 10 8 6 -20
-10 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz)
10
-16
-12 -8 -4 Input Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
Page 2 of 6 June 2005
AG203-86
InGaP HBT Gain Block
22 20 Gain vs. Frequency
The Communications Edge TM Product Information
Typical Device RF Performance (cont’d)
Supply Bias = +6 V, Rbias = 98 :, Icc = 20 mA
25 20 15 10
-40 C +25 C +85 C Output IP3 vs. Frequency
35 30 25 20
Output IP2 vs. Frequency
OIP3 (dBm)
18 16 14 12 0 -40 C 1 +25 C +85 C 3 4
OIP2 (dBm)
Gain (dB)
-40c
+25c
+85c
5
15
2 Frequency (GHz)
0
0.5
1
1.5
2
2.5
3
0
200
400
600
800
1000
Frequency (GHz)
P1dB vs. Frequency
Frequency (MHz)
Noise Figure vs. Frequency
10 5 0 -5
5 4
NF (dB)
P1dB (dBm)
3 2 1 0
-40 C +25 C +85 C
-40 C
+25 C
+85 C
-10 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz)
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Supply Bias = +8 V, Rbias = 198 :, Icc = 20 mA
22 20 Gain vs. Frequency
Typical Device RF Performance
25 20 15 10
-40 C +25 C +85 C Output IP3 vs. Frequency
35 30 25 20
Output IP2 vs. Frequency
OIP3 (dBm)
18 16 14 12 0 -40 C 1 +25 C +85 C 3 4
OIP2 (dBm)
Gain (dB)
+85c
+25c
-40c
5
15
2 Frequency (GHz)
0
0.5
1
1.5
2
2.5
3
0
200
400
600
800
1000
Frequency (GHz)
P1dB vs. Frequency
Frequency (MHz)
Noise Figure vs. Frequency
10 5 0 -5
5 4
NF (dB)
P1dB (dBm)
3 2 1 0
-40 C +25 C +85 C
-40 C
+25 C
+85 C
-10 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz)
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Specifications and information are subject to change without notice
¢
¢
¢
¢
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
Page 3 of 6 June 2005
AG203-86
InGaP HBT Gain Block
Vcc Icc = 20 mA
The Communications Edge TM Product Information
Application Circuit
R1 Bias Resistor C4 Bypass Capacitor C3 0.018 µF L1 RF Choke RF IN AG203-86 C1 Blocking Capacitor C2 Blocking Capacitor RF OUT
Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 µF 1000 pF Ref. Desig. L1 C1, C2 C3 C4 R1
Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF Size 0603 0603 0603 0603
2500 18 nH 56 pF
3500 15 nH 39 pF
1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 PF chip capacitor Do Not Place 47.5 : 1% tolerance
Recommended Bias Resistor Values S upply R1 value S ize Voltage 5V 47.5 ohms 0603 6V 98 ohms 0603 7V 148 ohms 0805 8V 198 ohms 0805 9V 248 ohms 1206 10 V 298 ohms 1210 12 V 398 ohms 1210
The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +5 V. A 1% tolerance resistor is recommended.
Typical Device Data
S-Parameters (Vdevice = +4.05 V, ICC = 20 mA, T = 25 C, calibrated to device leads.
Freq (MHz)
50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000
-22.84 -23.86 -27.29 -26.07 -25.11 -22.93 -22.25 -20.95 -19.51 -16.43 -16.78 -16.30 -16.36 -17.08 -18.26 -20.54 -24.06 -26.27 -28.81 -29.10 -29.66 -27.47 -23.43 -20.02 -17.60
S11 (dB)
-0.07 9.00 28.82 34.92 29.08 24.43 14.88 2.45 -8.95 -13.31 -23.33 -34.19 -40.45 -46.15 -50.28 -49.45 -47.33 -34.92 -7.87 4.10 -6.98 -47.93 -76.94 -92.84 -100.20
S11 (ang)
S21 (dB)
20.75 20.67 20.50 20.14 19.67 19.20 18.61 18.05 17.41 16.82 16.42 15.94 15.44 15.04 14.61 14.22 13.82 13.42 12.97 12.58 12.26 11.89 11.53 11.26 10.98
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
¢ ¢ ¢ ¢
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
£
177.32 166.89 153.87 141.62 129.97 118.62 108.25 98.43 89.13 81.09 75.17 66.69 59.03 51.80 44.52 37.06 29.86 22.90 15.72 8.48 1.83 -4.38 -10.48 -16.74 -22.74
S21 (ang)
-23.39 -23.73 -23.63 -23.52 -23.71 -22.95 -23.00 -22.57 -22.18 -21.84 -22.12 -21.11 -20.69 -20.33 -19.98 -19.86 -19.34 -18.89 -18.65 -18.33 -17.90 -17.79 -17.36 -17.43 -17.06
S12 (dB)
S12 (ang)
0.76 2.56 1.56 1.40 -0.82 0.96 -0.16 1.41 2.42 -1.23 -6.06 -6.07 -4.81 -6.56 -9.18 -14.94 -14.68 -20.14 -21.13 -26.55 -29.89 -34.21 -36.99 -39.01 -44.67
-13.40 -13.66 -15.89 -16.64 -17.55 -17.47 -17.07 -16.20 -15.55 -13.16 -13.53 -14.17 -15.24 -16.92 -19.42 -22.27 -21.48 -19.26 -17.44 -15.98 -14.84 -15.32 -15.49 -15.72 -15.62
S22 (dB)
-3.20 -11.48 -24.47 -41.51 -58.52 -77.84 -93.14 -104.31 -110.13 -105.60 -109.50 -114.41 -120.33 -126.45 -142.16 -170.32 152.21 128.72 118.35 114.86 117.23 122.63 131.30 145.53 155.14
S22 (ang)
e-mail: sales@wj.com
W eb site: www.wj.com
Page 4 of 6 June 2005
AG203-86
InGaP HBT Gain Block
The Communications Edge TM Product Information
AG203-86 (Sot-86 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Outline Drawing
Product Marking
The component will be marked with a “C” designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “Application Notes” section.
MSL / ESD Rating
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 0 Passes at 150 V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class II Passes at 250 V Charged Device Model (CDM) JEDEC Standard JESD22-C101
Land Pattern
MSL Rating: Level 1 Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
Rating
-40 to +85 qC 457 qC/W 122 qC
1. The thermal resistance is referenced from the hottest part of the junction to the ground lead (pin 2 or 4). 2. This corresponds to the typical biasing condition of +4.05V, 20 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C.
£ £
Specifications and information are subject to change without notice
¢ ¢ ¢ ¢
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
Page 5 of 6 June 2005
AG203-86
InGaP HBT Gain Block
The Communications Edge TM Product Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260qC reflow temperature) and leaded (maximum 245qC reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
AG203-86G (Green / Lead-free Sot-86 Package) Mechanical Information
Outline Drawing
Product Marking
The component will be marked with a “ N” designator followed by a two-digit numeric lot code on the top surface of the package. Tape and reel specifications for this part are located on the website in the “ Application Notes” section.
MSL / ESD Rating
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1C Passes at 1000 V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes at 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101
£
Land Pattern
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2)
-40 to +85 qC 457 qC/W 122 qC
MTTF (million hrs)
Rating
10000 1000 100 10 1 60
MTTF vs. GND Lead Temperature
1. The thermal resistance is referenced from the hottest part of the junction to the ground lead (pin 2 or 4). 2. This corresponds to the typical biasing condition of +4.05V, 20 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C.
£ £
70
80 90 100 110 Ground Lead Tem perature (° C)
120
Specifications and information are subject to change without notice
¢ ¢ ¢ ¢
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
W eb site: www.wj.com
Page 6 of 6 June 2005
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