AG603-89G

InGaP HBT Gain Block AG603-89 Product Description The Communications Edge TM Product Information Product Features x x x x x x DC – 3000 MHz +19.5 dBm P1dB at 900 MHz +33 dBm OIP3 at 900 MHz 18.5 dB Gain at 900 MHz Single Voltage Supply Lead-free / RoHS-compliant / Green SOT-89 package x Internally matched to 50 : Functional Diagram GND 4 The AG603-89 is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG603-89 typically provides 18.5 dB of gain, +33 dBm OIP3, and +19.5 dBm P1dB. The device combines dependable performance with consistent quality to maintain MTTF values exceeding 1000 years at mounting temperatures of +85 qC and is housed in a lead-free/green/RoHS-compliant SOT-89 industry-standard SMT package. The AG603-89 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a bias resistor, and an inductive RF choke for operation. The broadband MMIC amplifier can be directly applied to various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AG603-89 will work for other various applications within the DC to 3 GHz frequency range such as CATV and WiMAX. 1 RF IN 2 GND 3 RF OUT Applications x x x x x Mobile Infrastructure CATV / FTTX W-LAN / ISM RFID WiMAX / WiBro Function Input Output/Bias Ground Pin No. 1 3 2, 4 Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Output IP2 Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Device Voltage Device Current Typical Performance (1) Units MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm V mA Min DC Typ 900 18.5 18 14 +19.3 +33.2 +45 3.9 1900 16.5 +18.7 +33 5.16 75 Max 3000 Parameter Frequency S21 S11 S22 Output P1dB Output IP3 (2) Noise Figure Units MHz dB dB dB dBm dBm dB 500 19.1 -16 -18 +19.3 +33.6 3.8 Typical 900 18.5 -18 -14 +19.3 +33.2 3.9 1900 16.5 -24 -11 +18.7 +33.0 4.1 2140 16.0 -21 -11 +18.6 +33.0 4.1 15.5 17.5 1. Test conditions: 25 ºC, Supply Voltage = +6 V, Rbias = 11.2 , 50 System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. ¡ ¡ Absolute Maximum Rating Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Parameter -40 to +85 qC -55 to +150 qC +7 V +10 dBm +250 qC Rating Ordering Information Part No. AG603-89G AG603-89PCB Description InGaP HBT Gain Block 700 – 2400 MHz Fully Assembled Eval. Board Specifications and information are subject to change without notice (lead-free/green/RoHS-compliant SOT-89 Package) Operation of this device above any of these parameters may cause permanent damage.         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 1 of 5 June 2006 InGaP HBT Gain Block AG603-89 Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure MHz dB dB dB dBm dBm dB 100 19.4 -18 -29 +19.3 +33.7 3.8 500 19.1 -16 -18 +19.3 +33.6 3.8 ¡ The Communications Edge TM Product Information Supply Bias = +6 V, Rbias = 11.2 :, Icc = 75 mA 900 18.5 -18 -14 +19.3 +33.2 3.9 1900 16.5 -24 -11 +18.7 +33.0 4.1 ¡ Typical Device RF Performance 2140 16.0 -21 -11 +18.6 +33.0 4.1 2400 15.5 -22 -10 +18.6 +32.8 4.2 3500 13.5 -17 -8 +17.0 5800 9.7 -14 -6 1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 5.16 V, Rbias = 11.2 , Icc = 75 mA typical, 50 System. 2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit. 20 18 Gain vs. Frequency 0 -10 -20 -30 Return Loss 120 Device Current (mA) 100 80 60 40 20 0 3.4 3.8 4.2 I-V Curve 16 14 12 10 0 -40 C 1 +25 C +85 C 3 4 S11, S22 (dB) Optimal operating point Gain (dB) S11 S22 -40 2 Frequency (GHz) 0 1 2 3 4 5 6 4.6 5.0 5.4 5.8 Frequency (GHz) 50 45 40 35 -40 C +25 C +85 C Output IP2 vs. Frequency Device Voltage (V) 40 35 30 25 Output IP3 vs. Frequency 6 5 NF (dB) 4 3 2 1 Noise Figure vs. Frequency OIP3 (dBm) -40 C +25 C +85 C OIP2 (dBm) 20 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) 20 15 Gain (dB) -40 C +25 C +85 C 30 0 200 400 600 800 1000 0 0.5 1 1.5 2 2.5 3 Frequency (MHz) Output Power / Gain vs. Input Power 20 18 16 14 12 Output Power -12 -8 -4 0 Input Power (dBm) 4 8 Gain frequency = 900 MHz Frequency (GHz) Output Power / Gain vs. Input Power 24 O utput Power (dBm ) frequency = 2000 MHz P1dB vs. Frequency 18 16 Gain (dB) 24 O utput Power (dBm ) P1dB (dBm) 20 16 12 8 4 20 Gain 16 12 8 Output Power -12 -8 -4 0 Input Power (dBm) 4 8 4 10 5 -40 C +25 C +85 C 14 12 10 8 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 10 Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 2 of 5 June 2006 InGaP HBT Gain Block AG603-89 Gain vs. Frequency The Communications Edge TM Product Information Typical Device RF Performance (cont’d) Supply Bias = +8 V, Rbias = 38 :, Icc = 75 mA 40 35 30 25 -40 C +25 C +85 C Output IP3 vs. Frequency 20 18 16 14 12 10 0 -40 C 1 50 45 40 35 Output IP2 vs. Frequency OIP3 (dBm) OIP2 (dBm) Gain (dB) +25 C +85 C 3 4 -40 C +25 C +85 C 20 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) P1dB vs. Frequency 30 2 Frequency (GHz) 0 200 400 600 800 1000 Frequency (MHz) Noise Figure vs. Frequency 20 15 10 5 6 5 NF (dB) 4 3 2 1 P1dB (dBm) -40 C +25 C +85 C 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) -40 C +25 C +85 C 0 0.5 1 1.5 2 2.5 3 Frequency (GHz) Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 3 of 5 June 2006 InGaP HBT Gain Block Vcc Icc = 75 mA AG603-89 Application Circuit R1 Bias Resistor C4 Bypass Capacitor C3 0.018 µF L1 RF Choke The Communications Edge TM Product Information RF IN AG603-89 C1 Blocking Capacitor C2 Blocking Capacitor RF OUT Recommended Component Values Reference Designator 50 500 L1 820 nH 220 nH C1, C2, C4 .018 µF 1000 pF Ref. Desig. L1 C1, C2 C3 C4 R1 Frequency (MHz) 900 1900 2200 68 nH 27 nH 22 nH 100 pF 68 pF 68 pF Size 0603 0603 0603 0805 2500 18 nH 56 pF 3500 15 nH 39 pF 1. The proper values for the components are dependent upon the intended frequency of operation. 2. The following values are contained on the evaluation board to achieve optimal broadband performance: Value / Type 39 nH wirewound inductor 56 pF chip capacitor 0.018 PF chip capacitor Do Not Place 10.0 : 1% tolerance Recommended Bias Resistor Values S upply R1 value S ize Voltage 6V 11.2 ohms 0805 7V 24.5 ohms 1210 8V 38 ohms 1210 9V 51 ohms 2010 10 V 65 ohms 2010 12 V 91 ohms 2512 The proper value for R1 is dependent upon the supply voltage and allows for bias stability over temperature. WJ recommends a minimum supply bias of +6 V. A 1% tolerance resistor is recommended. Typical Device Data S-Parameters (Vdevice = +5.16 V, ICC = 75 mA, T = 25 C, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 4250 4500 4750 5000 5250 5500 5750 6000 -17.44 -17.55 -16.33 -16.49 -17.80 -18.70 -20.48 -22.81 -24.74 -21.87 -22.77 -23.12 -22.25 -20.31 -17.65 -15.03 -13.12 -12.12 -11.59 -11.70 -12.17 -13.17 -14.11 -14.62 -13.49 -179.21 169.85 155.63 144.00 130.88 119.59 106.91 88.42 60.37 29.86 18.29 18.81 26.15 42.35 52.62 53.03 55.09 53.85 53.30 51.75 48.19 43.40 36.29 22.26 5.63 19.75 19.62 19.38 19.03 18.59 18.16 17.63 17.10 16.56 16.12 15.76 15.31 14.81 14.34 13.78 13.17 12.59 12.02 11.51 11.11 10.84 10.56 10.29 10.11 9.76 Device S-parameters are available for download off of the website at: http://www.wj.com Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 ¢ S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 176.96 165.49 151.11 137.34 124.33 111.75 100.07 88.76 77.95 68.02 60.37 49.71 39.30 29.43 19.36 9.56 0.02 -8.87 -17.30 -26.46 -35.22 -44.04 -53.54 -63.62 -74.55 -22.08 -22.50 -22.67 -22.45 -22.66 -22.40 -22.23 -22.08 -21.89 -21.72 -21.93 -21.11 -21.00 -20.82 -20.84 -20.59 -20.50 -20.30 -20.17 -20.05 -19.48 -19.40 -19.03 -18.72 -18.78 -0.65 0.12 -5.41 -5.63 -13.12 -12.10 -14.79 -16.04 -20.42 -22.87 -29.82 -31.74 -31.75 -38.05 -43.03 -49.28 -52.56 -58.22 -63.33 -68.23 -72.90 -78.82 -84.21 -91.82 -102.14 -30.21 -25.52 -18.87 -16.22 -14.49 -12.89 -12.04 -11.36 -10.95 -10.69 -10.61 -10.58 -10.22 -9.59 -8.43 -7.32 -6.47 -5.78 -5.49 -5.33 -5.48 -5.82 -6.08 -6.19 -5.94 -157.09 -140.18 -152.26 -154.81 -160.35 -164.96 -169.44 -174.80 179.74 -176.50 173.91 159.59 143.79 125.14 108.91 95.17 84.81 76.60 68.35 62.23 56.23 48.68 40.56 29.58 16.34 e-mail: sales@wj.com W eb site: www.wj.com Page 4 of 5 June 2006 InGaP HBT Gain Block AG603-89 Outline Drawing The Communications Edge TM Product Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu. AG603-89G (Green / Lead-free SOT-89 Package) Mechanical Information Product Marking The AG603-89G will be marked with an “A603G” designator with an alphanumeric lot code marked below the part designator. The obsolete tin-lead package is marked with an “AG603” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. MSL / ESD Rating Land Pattern ¤ ¤ ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1C Passes 1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 ¢ MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. MTTF (million hrs) Rating 1000 MTTF vs. GND Tab Temperature -40 to +85 qC 154 qC / W 145 qC 100 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5.16V, 75 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 177 C. ¢ ¢ 10 1 60 70 80 90 100 110 Tab Temperature (°C) 120 Specifications and information are subject to change without notice £ £ £ £ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 5 of 5 June 2006