AH101

AH101 Product Features x x x x x x 50 – 1500 MHz +47 dBm Output IP3 13.5 dB Gain +26.5 dBm P1dB MTTF > 1000 Years Internally Matched x Single +9 V Supply x Lead-free/Green/RoHScompliant SOT-89 Package The Communications Edge TM Product Information Medium Power, High Linearity Amplifier Product Description The AH101 is a medium power gain block that offers excellent dynamic range in a low-cost surface mount package. The combination of a single supply voltage and an internally matched device makes it ideal for both narrow and broadband applications. Only dc blocking and bypass capacitors as well as an RF choke are required for operation. Superior thermal design allows the product to achieve +46 dBm IP3 performance at a mounting temperature of +85 qC with an associated MTTF of greater than 1000 years. The AH101 is available in the environmentally-friendly leadfree/green/RoHS-compliant SOT-89 package. The broadband amplifier uses a high reliability GaAs MESFET technology and is targeted for applications where high linearity is required. Functional Diagram GND 4 1 RF IN 2 GND 3 RF OUT Applications x Mobile Infrastructure x CATV / DBS x Defense / Homeland Security Function Input Ground Output / Bias Ground Pin No. 1 2 3 4 Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output IP3 (2) Output P1dB Noise Figure Operating Current Range Supply Voltage Typical Performance Units Min MHz MHz dB dB dB dBm dBm dB mA V 50 12 800 13.5 20 15 +47 +26.5 3.5 200 +9 Typ Max 1500 Parameter Frequency Gain S11 S22 Output P1dB Output IP3 (2) Output IP2 Noise Figure Supply Current Supply Voltage Units MHz dB dB dB dBm dBm dBm dB mA V 50 13.6 -23 -8 +26.1 +45 +63 4.4 Typical 450 13.8 -27 -14 +26.5 +47 +63 3.4 200 +9 900 13.5 -21 -18 +26.5 +47 +60 3.6 1500 12.7 -14 -16 +25 +47 +59 4.2 +43 170 230 1. Test conditions unless otherwise noted: T = 25 ºC, Vdd = +9 V in a 50 ohm test fixture. 2. OIP3 is measured with two tones at an output power of +8 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 rule. Absolute Maximum Rating Operating Case Temperature Storage Temperature DC Voltage RF Input Power (continuous) Junction Temperature Parameter -40 to +85 qC -55 to +150 qC +11 V +18 dBm 220 qC Rating Ordering Information Part No. AH101-G AH101-PCB Description (lead-free/green/RoHS-compliant SOT-89 Pkg) Med. Power High Linearity Amplifier 50-1500 MHz Fully Assembled Evaluation Board Specifications and information are subject to change without notice Operation of this device above any of these parameters may cause permanent damage.         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 1 of 5 June 2006 AH101 +9V Vds The Communications Edge TM Product Information Medium Power, High Linearity Amplifier VDS = +9 V, IDS = 200 mA, T = 25 C, unmatched 50 ohm system Gain vs. Frequency over Temperature 14 12 10 8 6 4 0 400 800 Frequency (MHz) 1200 1600 Typical Device Data Gain vs. Frequency over Vds 25 C ¢ ¡ Noise Figure vs. Frequency over Vds 6 5 4 25 C ¢ 16 14 12 -40 C 0C +40 C +80 C 10 8 6 0 400 800 Frequency (MHz) 1200 7V 8V 9V 1600 3 2 1 0 400 800 Frequency (MHz) 1200 7V 8V 9V 1600 S11 vs. Frequency over Temperature +9V Vds S22 vs. Frequency over Temperature +9V Vds Pout vs. Pin over Vds 28 26 900 MHz, 25 C ¢ 0 -10 -40 C 0C +40 C +80 C 0 -10 24 -20 -20 -30 0 400 800 Frequency (MHz) 1200 1600 -30 0 -40 C 0C +40 C +80 C 400 800 Frequency (MHz) 1200 1600 22 20 18 6 8 10 12 14 Input Power (dBm) 7V 8V 9V 10 V 16 OIP3 vs. Frequency over Vds 50 45 40 35 30 0 400 800 Frequency (MHz) ¡ OIP3 vs. Temperature over Vds 50 45 40 freq = 900, 910 MHz at +8 dBm/tone P1dB vs. Frequency over Vds 900 MHz, 25 C 28 26 24 7V 8V 9V 10 V 1200 1600 35 30 -40 0 £ 7V 8V 9V 40 80 22 20 18 0 400 800 Frequency (MHz) 1200 Temperature ( C) S-Parameters (VDS = +9 V, IDS = 200 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 -18.92 -22.31 -23.85 -23.32 -21.73 -20.76 -19.65 -18.62 -17.32 -16.53 -60.71 -52.06 -47.09 -62.31 -77.34 -90.04 -105.39 -121.62 -131.81 -141.33 13.78 13.63 13.50 13.48 13.32 13.19 13.05 12.94 12.76 12.55 168.24 169.87 166.42 157.06 146.40 135.74 124.67 114.96 104.01 93.98 -19.25 -19.13 -19.17 -19.28 -19.36 -19.47 -19.74 -20.07 -20.36 -20.44 4.11 0.17 -5.09 -12.63 -19.07 -25.94 -33.10 -39.77 -45.37 -53.24 -14.51 -14.86 -15.22 -14.83 -14.55 -14.02 -13.40 -12.95 -12.44 -12.02 Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com ¢ +8 dBm/tone, 25 C ¢ 7V 8V 9V 10 V 1600 -160.07 -177.29 164.61 140.14 118.64 97.71 80.17 63.09 47.65 31.14 Page 2 of 5 June 2006 AH101 The Communications Edge TM Product Information Medium Power, High Linearity Amplifier Application Circuit PC Board Layout Circuit Board Material: .014” Getek ( r=4.2), four layer, 1 oz copper Microstrip line details: width = .026”, spacing = .026” Application Circuit: 900 MHz (AH101-PCB) Typical RF Performance at 25qC Frequency Gain S11 S22 Output P1dB Output IP3 (2) Output IP2 Noise Figure Supply Voltage Supply Current Units dB dB dB dBm dBm dBm dB V mA 50 13.6 -23 -8 +26.1 +45 +63 4.4 450 13.8 -27 -14 +26.5 +47 +63 3.4 900 13.5 -21 -18 +26.5 +47 +60 3.6 1500 12.7 -14 -16 +25 +47 +59 4.2 ID=C1 C=0.018 uF ID=L1 R=0 Ohm NET="AH101" +9V 9 200 Notes: 1. The amplifier should be connected directly to a +9 V regulator; no dropping resistor is required. 2. If no DC signal is present at the input (pin 1), C1 can be removed. The gate (input pin) is internally grounded in the amplifier. 3. R1, C2, and L1 are used as placeholders for a different device on the same PCB layout. They are not needed for the AH101. 3. Component sizes are 0603 unless otherwise noted. Gain vs. Frequency Return Loss vs. Frequency S11 S22 16 14 12 10 8 6 0 400 800 Frequency (MHz) 1200 1600         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com ¤ ID=R1 R=0 Ohm ID=C3 C=0.018 uF ID=L2 L=470 nH size 0805 ID=C6 C=.018 uF 0 -10 -20 -30 -40 0 400 800 Frequency (MHz) 1200 1600 Specifications and information are subject to change without notice W eb site: www.wj.com Page 3 of 5 June 2006 AH101 Frequency S21 S11 S22 OIP2 (2) OIP3 (3) Noise Figure CSO (4) CTB (4) Supply Bias MHz dB dB dB dBm dBm dB dBc dBc 50 11.4 -17 -17 84 6 The Communications Edge TM Product Information Medium Power, High Linearity Amplifier AH101 CATV Push-Pull Reference Design § 450 10.8 -19 -20 750 10.4 -19 -16 860 10.2 -25 -14 R1 56 C1 100 pF C3 1000 pF RF IN AH101 Notes: 1. Parameters reflect performance in the 75 push-pull application circuit. 2. OIP2 is measured with +17 dBm at the fundamental. 3. OIP3 is measured with 2 tones at +17 dBm/tone with 10 MHz spacing. 4. 77 Channels Flat Loading, Pin = 34 dBmV / channel. ¦ FR4 Board Layout (T=28 mils to ground plane) Interior Trans. Lines Z=37.5 Ohm AH101 R1 C1 C4 R2 The AH101 should be thermally mounted according to what is shown in the datasheet. 12 10 8 6 4 2 0 200 Gain vs. Frequency 0 -5 -10 -15 -20 -25 Return Loss vs. Frequency S11 S22 400 600 800 1000 0 200 400 600 800 1000 Frequency (MHz) Frequency (MHz) Specifications and information are subject to change without notice ¥ ¥ ¥ ¥ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com § 50 5.3 5.4 -83.3 -68.6 9 V @ 200 mA 5.1 6 turns bifilar wire around ferrite core AH101 R2 56 L1 470 nH 1008 +9 V C2 100 pF C4 1000 pF C5 1000 pF 6 turns bifilar wire around ferrite core RF OUT L2 470 nH 1008 C3 L1 +9.0 L2 C5 AH101 C2 Core: TDK H5C2-T3.1-1.3-1.3 Wire: MWS B2383211 100 90 80 70 60 50 40 8 10 OIP2 & OIP3 vs. Power Out OIP3 OIP2 12 14 16 18 20 Power Out / Tone (dBm) Page 4 of 5 June 2006 AH101 The Communications Edge TM Product Information Medium Power, High Linearity Amplifier This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu. AH101-G (Green / Lead-free SOT-89 Package) Mechanical Information Outline Drawing Product Marking The AH101-G will be marked with an “101G” designator. An alphanumeric lot code (“XXXX-X” ) is also marked below the part designator on the top surface of the package. The obsolete tin-lead package is marked with an “AH101” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. Land Pattern MSL / ESD Rating ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1C Passes 1000V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes 1000V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101 ©   MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) Rating 1000 MTTF vs. GND Tab Temperature -40 to +85 qC 2 5 qC / W 130 qC 100 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +9V, 200 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C. © © 10 1 60 70 80 90 100 110 Tab Temperature (° C) 120 Specifications and information are subject to change without notice ¨ ¨ ¨ ¨ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 5 of 5 June 2006