AH114-89PCB2140

AH114 ¼ Watt, High Linearity InGaP HBT Amplifier The Communications Edge TM Product Information Product Features  60 – 2500 MHz  +24 dBm P1dB  +41 dBm Output IP3  19 dB Gain @ 900 MHz  14.5 dB Gain @ 1900 MHz  +5V Single Positive Supply  Lead-free / Green / RoHScompliant SOT-89 Package Product Description The AH114 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +41 dBm OIP3 and +24 dBm of compressed 1dB power. It is housed in a lead-free/green/RoHS-compliant SOT-89 SMT package. All devices are 100% RF and DC tested. The AH114 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH114 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations. Functional Diagram GND 4 1 RF IN 2 GND 3 RF OUT Applications  Final stage amplifiers for Repeaters  Mobile Infrastructure  DBS / WLL / WLAN / WiBro  Defense / Homeland Security Function Input / Base Output / Collector Ground Pin No. 1 3 2, 4 Specifications (1) Parameters Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR Typical Performance (1) Units MHz MHz dB dB dB dBm dBm dBm dB MHz dB dBm dBm mA V Min 60 13.5 Typ 1900 14.5 10 14 +23 +41 +17 5.0 2140 14 +23 +40 150 +5 Max 2500 Parameters Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 Noise Figure Supply Bias Units MHz dB dB dB dBm dBm dB Typical 900 1900 2140 19 14.5 14 -14 -10 -25 -10 -14 -20 +24 +23 +23 +40 +41 +40 5.0 5.0 6.0 +5 V @ 150 mA +39.5 Noise Figure Test Frequency Gain Output P1dB Output IP3 (2) Operating Current Range Device Voltage 130 170 1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Junction Temperature Rating -40 to +85 C -65 to +150 C +15 dBm +6 V 220 mA +250 C Ordering Information Part No. AH114-89G Description (lead-free/green/RoHS-compliant SOT-89 Pkg) ¼ Watt, High Linearity InGaP HBT Amplifier AH114-89PCB900 900 MHz Evaluation Board AH114-89PCB1900 1900 MHz Evaluation Board AH114-89PCB2140 2140 MHz Evaluation Board Specifications and information are subject to change without notice Operation of this device above any of these parameters may cause permanent damage. WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 1 of 6 November 2006 AH114 ¼ Watt, High Linearity InGaP HBT Amplifier The Communications Edge TM Product Information Typical Device Data S-Parameters (Vcc = +5 V, Icc = 150 mA, T = 25 C, unmatched 50 ohm system) Gain / Maximum Stable Gain 0. 8 S11 1. 0 6 0. S22 2. 0 6 0. 30 DB(|S[2,1]|) * 25 20 Ga in (dB) 15 DB(GMax) * 4 0. Swp Max 3.075GHz 1. 0 Swp Max 3.075GHz 2. 0 0 3. 0 4. 0. 2 0 5. 0. 8 0. 4 0 3. 0 4. 0 5. 10. 0 0. 2 0. 4 0. 6 0. 8 1. 0 2. 0 3. 0 4. 0 5. 0 0. 2 0. 4 0. 6 0. 8 1. 0 2. 0 3. 0 4. 0 0 0 5 0 0 0.5 1 1.5 Frequency (GHz) 2 2.5 3 .4 -0 .4 -0 0 -0 .6 . -2 -0 .6 0 2. -0. 8 Swp Min 0.05GHz -1. 0 -0. 8 - Swp Min 0.05GHz -1. 0 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments. S-Parameters (Vcc = +5 V, Icc = 150 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -3.61 -3.31 -2.62 -2.62 -2.54 -2.39 -2.27 -2.21 -2.16 -2.05 -1.99 -1.84 -1.68 -1.46 -1.33 -1.20 -1.17 -169.14 -173.35 179.12 173.23 168.30 163.31 158.06 152.89 147.55 142.54 137.85 133.47 129.41 125.20 120.48 115.03 109.05 23.08 21.93 19.02 17.74 16.69 15.62 14.57 13.55 12.54 11.65 10.70 9.91 9.13 8.46 7.85 7.22 6.62 149.67 148.90 146.43 136.11 123.77 111.53 101.13 91.40 82.69 74.35 66.99 59.96 53.84 47.68 41.30 34.74 27.78 -30.46 -29.57 -27.97 -27.96 -27.96 -27.96 -26.02 -26.02 -26.02 -26.02 -25.08 -24.44 -24.44 -24.44 -23.27 -23.10 -23.10 17.14 14.05 9.40 10.86 10.86 10.62 9.88 8.87 7.57 5.95 4.22 2.37 0.24 -2.39 -5.53 -9.13 -12.86 -7.74 -7.80 -6.40 -6.33 -6.09 -5.86 -5.68 -5.58 -5.37 -5.20 -5.20 -5.05 -5.01 -4.89 -4.88 -4.73 -4.66 -128.38 -143.29 -169.43 -179.95 173.78 168.37 163.12 157.73 152.46 147.09 141.71 136.43 131.29 126.16 121.19 116.28 111.40 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, 4 layers (other layers added for rigidity), .062” total thickness, 1 oz copper Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning. Specifications and information are subject to change without notice WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 2 of 6 November 2006 -4 .0 -5. 0 -3 .0 -4 .0 -5. 0 2 -0. 2 -0. - 10. 0 - 10. 10 0 5. 0 10. 0 -3 .0 0. 2 10. 0 10. 0 AH114 ¼ Watt, High Linearity InGaP HBT Amplifier Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 900 MHz Application Circuit (AH114-89PCB900) Vcc = +5 V All passive components are of size 0603 unless otherwise noted. 900 MHz 19 dB -14 dB -10 dB +40 dBm +24 dBm 5.0 dB +5 V 150 mA Application Circuit: 900 MHz CAP ID=C3 C=100000 pF s ize 1206 CAP ID=C2 C=1000 pF s ize 0805 RES ID=R1 R=2700 Ohm PORT P=1 Z=50 Ohm CAP ID=C4 C=56 pF RES ID=L2 R=0 Ohm DIODE1 ID=D1 5.6 V IND ID=L1 L=33 nH CAP ID=C1 C=56 pF CAP ID=C5 C=56 pF PORT P=2 Z=50 Ohm Output P1dB Noise Figure Supply Voltage Supply Current CAP ID=C6 C=5.6 pF SUBCKT ID=U1 NET="AH114" C6 should be placed at the silk sc reen marker "F" on the WJ evaluation board. The capacitor should be plac ed 14° @ 0.9GHz f rom pin 1. CAP ID=C9 C=1.0 pF C9 should be placed at the s ilk screen marker "8" on the W J evaluation board. The capacitor s hould be placed 19° @ 0.9GHz from pin 3. Measured parameters were taken at 25 C. 20 15 10 ACPR IS-95A vs. Channel Power IS-95, 9 Ch. Forward, 30 kHz Meas BW, ±885 kHz offset -40 ACPR (dBc) freq = 0.9 GHz Magn itu de (dB) 5 0 -5 -10 -15 -20 0.7 DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) * -50 -60 -70 13 0.8 0.9 Frequency (GHz) 1 1.1 14 15 16 17 18 Output Channel Power (dBm) 1900 MHz Application Circuit (AH114-89PCB1900) Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) V cc = + 5 V All passive components ar e of size 0603 unless otherwise noted. 1900 MHz 14.5 dB -10 dB -14 dB +41 dBm +23 dBm 5.0 dB +5 V 150 mA CAP ID=C3 C=100000 pF size 1206 C AP ID=C2 C=1000 pF size 0805 C AP ID=C1 C=56 pF RES ID=R1 R=2700 Ohm CAP ID=C4 C=56 pF DIODE1 ID=D1 5.6 V PORT P=1 Z=50 Ohm IND ID=L2 L=2.7 nH IND ID=L1 L=15 nH CAP ID=C5 C=56 pF PORT P=2 Z=50 Ohm Output P1dB Noise Figure Supply Voltage Supply Current C AP ID=C7 C=2.4 pF C7 should be placed at the silk screen marker "A" on the W J evaluation board. The capacitor should be placed 5° @ 1.9GHz from pin 1. SUBCKT ID=U1 NET="AH114" CAP ID=C9 C=1.2 pF C9 should be placed at the silk screen marker "7" on the WJ evaluation board. The capacitor should be placed 34° @ 1.9GHz from pin 3. Measured parameters were taken at 25 C. Application Circuit: 1900 MHz 20 15 10 Magn itu de (dB) 5 0 -5 -10 -15 -20 1.6 1.7 1.8 1.9 Frequency (GHz) 2 2.1 DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) * ACPR IS-95A vs. Channel Power IS-95, 9 Ch. Forward, 30 kHz Meas BW, ±885 kHz offset -40 freq = 1.9 GHz ACPR (dBc) -50 -60 -70 13 14 15 16 17 18 Output Channel Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 3 of 6 November 2006 AH114 ¼ Watt, High Linearity InGaP HBT Amplifier Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 2140 MHz Application Circuit (AH114-89PCB2140) Vcc = +5 V All passive components are of size 0603 unless otherwise n oted . 2140 MHz 14 dB -25 dB -20 dB +40 dBm +23 dBm 6.0 dB +5 V 150 mA R ES ID= R1 R = 2700 O hm L2 should be pla ced 19.5° @ 2.14GHz f r om pi n 1 of t he A H 114. PO R T P =1 Z = 50 O hm C AP ID= C4 C = 56 pF C AP I D = L2 C = 1. 5 pF D I O D E1 I D =D 1 5. 6 V IND I D = L1 L= 15 nH C AP I D =C 3 C = 1 00000 pF size 1206 C AP I D =C 2 C = 10 00 p F size 0805 CAP ID= C1 C= 56 pF C AP I D =C 5 C = 56 pF PO R T P= 2 Z= 50 Oh m Output P1dB Noise Figure Supply Voltage Supply Current C AP I D =C 6 C = 1. 5 pF SU BC KT I D =U 1 NET= "AH114" C AP I D =C 9 C = 0. 8 pF C9 shou ld be placed at the silk screen marker "6" on the W J evaluation boa rd. The ca pacitor should be place d 39° @ 2. 14G H z f r om pi n 3 . C6 sho uld be placed at the silk screen marker "F" o n the W J evaluation bo ard. The capacitor should be placed 33° @ 2. 14G H z f r om pi n 1. Measured parameters were taken at 25 C. W-CDMA ACLR vs. Channel Power Application Circuit: 2140 MHz 15 10 5 Magn itu de (dB) 0 -5 -10 -15 -20 -25 1.9 2 2.1 Frequency (GHz) 2.2 2.3 DB(|S[1,1]|) * DB(|S[2,1]|) * DB(|S[2,2]|) * -35 -40 ACLR (dBc) -45 -50 -55 -60 12 3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset freq = 2140 MHz 13 14 15 16 Output Channel Power (dBm) 70 MHz Reference Design Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) Vcc = +5 V CAP C=1e7 pF CAP C=1000 pF CAP C=10 pF RES R=2700 Ohm IND L=470 nH PORT P=2 Z=50 Ohm 70 MHz 23.4 dB -15 dB -14 dB +44.5 dBm +23.8 dBm 6.5 dB +5 V 150 mA Measured Gain PORT P=1 Z=50 Ohm CAP C=1000 pF IND L=56 nH RES R=3.9 Ohm IND L=33 nH Output P1dB Noise Figure Supply Voltage Supply Current CAP C=68 pF SUBCKT ID=U1 NET="AH114" CAP C=1000 pF Measured parameters were taken at 25 C. Measured Return Loss 0 DB(|S[1,1]|) -5 DB(|S[2,2]|) 26 DB(|S[2,1]|) 24 Gain (dB) Ret urn Lo ss (dB) -10 -15 22 -20 20 40 50 60 70 Frequency (MHz) 80 90 100 -25 40 50 60 70 Frequency (MHz) 80 90 100 Specifications and information are subject to change without notice WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 4 of 6 November 2006 AH114 ¼ Watt, High Linearity InGaP HBT Amplifier Typical RF Performance Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output IP3 (+11 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 110 MHz Reference Design 110 MHz 21.9 dB -16 dB -12 dB +44 dBm +23.8 dBm 6.6 dB +5 V 150 mA PORT P=1 Z=50 Ohm CAP C=1000 pF IND L=33 nH Vcc = +5 V CAP C=1e7 pF CAP C=1000 pF CAP C=10 pF RES R=2700 Ohm IND L=470 nH PORT P=2 Z=50 Ohm RES R=3.9 Ohm IND L=18 nH Output P1dB Noise Figure Supply Voltage Supply Current CAP C=47 pF SUBCKT I D=U1 NET="AH114" CAP C=1000 pF Measured parameters were taken at 25 C. Measured Gain 24 DB(|S[2,1]|) 22 Ga in (dB) 20 18 80 90 100 110 120 Frequency (MHz) 130 140 Measured Return Loss 0 DB(|S[1,1]|) -5 Ret urn Lo ss (dB) DB(|S[2,2]|) -10 -15 -20 -25 80 90 100 110 120 Frequency (MHz) 130 140 Specifications and information are subject to change without notice WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 5 of 6 November 2006 AH114 ¼ Watt, High Linearity InGaP HBT Amplifier The Communications Edge TM Product Information AH114-89G (Green / Lead-free SOT-89 Package) Mechanical Information This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu. Outline Drawing Product Marking The component will be marked with an “AH114 G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tinlead package is marked with an “AH114” or “E009” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information Land Pattern ESD Rating: Class 1A Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) Rating -40 to +85 C 149 C / W 197 C MTTF vs. GND Tab Temperature 1000.0 Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. MTTF (million hrs) 100.0 10.0 1.0 60 70 80 90 100 110 Tab Temperature (°C) 120 Specifications and information are subject to change without notice WJ Communications, Inc  Phone 1-800-WJ1-4401  FAX: 408-577-6621  e-mail: sales@wj.com  W eb site: www.wj.com Page 6 of 6 November 2006