AH22S-G

AH22S Product Features x 50 – 1000 MHz x ±0.2 dB Gain Flatness x +25 dBm P1dB x -74 dBc CTB / CSO +39dBmV/channel, 77 channels The Communications Edge TM Product Information High Dynamic Range CATV Amplifier Product Description The AH22S is a high dynamic range amplifier targeting cable TV markets. The combination of gain flatness, high linearity, and bandwidth makes it ideal for CATV distribution, cable modem, and laser diode driver applications. The device uses two matched devices and is ideal for operation in a push-pull configuration to achieve high second order linearity. A mature and reliable GaAs MESFET technology is employed to maximize linearity at low power dissipation. The dual amplifier is housed in an industry standard surface-mount SOIC-8 package with all devices being 100% RF and dc tested. This device is available in a lead-free/green/RoHS-compliant package with NiPdAu plating material on the leads. It is compatible with both lead-free and lead soldering processes. Functional Diagram 1 2 3 4 8 7 6 5 x +43 dBm Output IP3 x +77 dBm Output IP2 x Matched amplifiers for a pushpull configuration x +5V Single Positive Supply x MTTF > 1000 years Applications x CATV Head End Equipment x CATV Line Amplifiers x FTTH Repeaters Function Amp 1 Input Amp 2 Input Amp 2 Output Amp 1 Output Ground Pin No. 1 4 5 8 2, 3, 6, 7, Backside paddle Single-ended Device Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Output IP3 (2) Device Current Device Voltage ¡ Typical Performance (3) Parameter Frequency Gain (4) Input Return Loss Output Return Loss CTB (5) CSO (5) XMOD (5) Output P1dB Output IP2 (6) Output IP3 (7) Noise Figure Device Bias Units Min MHz MHz dB dBm mA V 50 13 +37 120 Typ 800 14.5 +40 160 5 Max 1000 Units MHz dB dB dB dBc dBc dBc dBm dBm dBm dB V 50 11.3 10.6 17.1 -75 -73 -63 +25.9 +79 +43 6.1 Typical 250 450 860 11.1 11.1 11.1 10.4 11.6 15.8 15.4 15.4 18.2 -74 -74 -86 -77 -63 -63 +26 +25.5 +24.7 +77 +77 +76 +45 +42 +42 4.6 4.5 4.2 +5 V @ 320 mA 190 1. Test conditions unless otherwise noted: 25 ºC, Vd = +5 V, 800 MHz on each individual singlebranch amplifier in a 50 test fixture. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Typical parameters reflect performance in a push-pull application circuit as shown on page 3. Note that the feedback resistance values are R1 = R2 = 560 . 4. Balun, board, and connector losses have not been extracted, but typically account of 0.4 dB loss midband and 1.1 dB loss at 860 MHz. 5. Measured at +39 dBmV/channel, 77 channels Flat Loading. 6. OIP2 is measured at f1 + f2 at +8 dBm / tone. 7. OIP3 is measured at 8 dBm / tone with 10 MHz spacing. ¡ Absolute Maximum Rating Operating Case Temperature Storage Temperature Supply Voltage RF Input Power (continuous) Junction Temperature Parameter -40 to +85 qC -55 to +150 qC +6 V +13 dBm +220 qC Rating Ordering Information Part No. AH22S-G AH22S-PCB Description (lead-free/green/RoHS-compliant SOIC8 Pkg) High Dynamic Range CATV Amplifier Push-pull CATV Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice.         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 1 of 4 April 2006 AH22S The Communications Edge TM Product Information High Dynamic Range CATV Amplifier Typical Device Data – 50: Zo S-Parameters (Vds = +5 V, Ids = 160 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) This data represents a single-ended amplifier in the AH22S, with there being two matched amplifiers inside the package. Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 -7.94 -19.61 15.23 168.38 -21.82 1.63 -15.80 -30.57 100 -8.21 -19.49 15.08 167.60 -21.70 -2.29 -16.57 -23.98 150 -8.22 -22.08 15.09 165.36 -21.79 -4.14 -16.83 -22.42 200 -8.25 -25.88 15.06 162.70 -21.72 -5.10 -17.08 -22.40 250 -8.21 -29.76 15.07 160.34 -21.71 -6.46 -17.15 -24.78 300 -8.23 -34.25 15.03 157.80 -21.68 -7.08 -17.08 -26.62 350 -8.23 -38.03 14.97 155.21 -21.61 -8.03 -17.41 -28.61 400 -8.26 -42.15 14.91 152.90 -21.62 -8.74 -17.56 -31.59 450 -8.21 -47.04 14.90 150.12 -21.57 -8.94 -17.49 -34.08 500 -8.17 -51.60 14.89 147.43 -21.58 -9.79 -17.75 -36.18 550 -8.11 -55.76 14.92 145.05 -21.53 -10.47 -17.80 -38.05 600 -8.14 -60.10 14.80 142.10 -21.47 -11.19 -18.07 -40.53 650 -8.13 -65.20 14.76 139.29 -21.49 -12.18 -18.25 -43.17 700 -8.02 -69.16 14.70 136.86 -21.41 -12.79 -18.42 -46.67 750 -8.04 -73.20 14.70 134.04 -21.38 -13.38 -18.69 -48.74 800 -8.02 -77.63 14.64 131.89 -21.30 -14.62 -18.86 -51.10 850 -7.98 -82.46 14.59 128.68 -21.26 -15.36 -18.96 -55.03 900 -7.91 -87.02 14.53 125.87 -21.16 -16.42 -19.19 -56.96 950 -7.86 -90.65 14.45 123.67 -21.12 -17.35 -19.48 -59.54 1000 -7.80 -94.58 14.39 121.33 -21.13 -18.12 -19.74 -63.18 ¢ ¢ Typical Device Data – 37.5: Zo S-Parameters (Vds = +5 V, Ids = 160 mA, T = 25 C, unmatched 37.5 ohm system, calibrated to device leads) This data represents a single-ended amplifier in the AH22S, with there being two matched amplifiers inside the package. Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 -4.93 -12.81 14.35 170.16 -22.71 3.41 -9.19 -14.24 100 -5.09 -13.16 14.22 169.21 -22.57 -0.68 -9.40 -11.89 150 -5.12 -15.14 14.24 167.09 -22.64 -2.42 -9.51 -11.83 200 -5.17 -17.82 14.22 164.62 -22.55 -3.18 -9.61 -12.33 250 -5.18 -20.59 14.25 162.52 -22.53 -4.28 -9.66 -13.85 300 -5.23 -23.68 14.24 160.24 -22.47 -4.63 -9.66 -15.12 350 -5.28 -26.40 14.20 157.86 -22.38 -5.38 -9.83 -16.35 400 -5.36 -29.29 14.17 155.77 -22.36 -5.87 -9.95 -17.91 450 -5.39 -32.75 14.19 153.27 -22.28 -5.79 -9.96 -19.42 500 -5.45 -36.09 14.22 150.79 -22.26 -6.43 -10.12 -20.68 550 -5.48 -39.19 14.28 148.61 -22.17 -6.90 -10.17 -21.94 600 -5.58 -42.45 14.20 145.83 -22.07 -7.46 -10.35 -23.33 650 -5.69 -46.33 14.21 143.20 -22.04 -8.27 -10.51 -24.87 700 -5.70 -49.50 14.18 140.95 -21.93 -8.70 -10.66 -26.61 750 -5.81 -52.71 14.22 138.23 -21.86 -9.19 -10.83 -27.82 800 -5.92 -56.28 14.21 136.19 -21.73 -10.32 -10.97 -29.22 850 -6.02 -60.34 14.21 133.11 -21.64 -10.93 -11.15 -31.33 900 -6.10 -64.31 14.21 130.38 -21.49 -11.90 -11.32 -32.62 950 -6.17 -67.57 14.17 128.23 -21.41 -12.79 -11.55 -33.86 1000 -6.26 -71.12 14.16 125.92 -21.37 -13.52 -11.80 -35.45 Specifications and information are subject to change without notice.         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 2 of 4 April 2006 AH22S The Communications Edge TM Product Information High Dynamic Range CATV Amplifier 75: Push-Pull Application Circuit Circuit Board Material: .062” total thickness with a .028” FR4 top RF layer ( r=4.8), 4 total layers (other layers added for rigidity), 1 oz copper Typical RF Performance at 25qC Frequency Gain Input R.L. Output R.L. CTB CSO XMOD Output P1dB Output IP2 Output IP3 Noise Figure Device Current Device Voltage MHz dB dB dB dBc dBc dBc dBm dBm dBm dB mA V 50 11.3 10.6 17.1 -75 -73 -63 +25.9 +79 +43 6.1 250 450 860 11.1 11.1 11.1 10.4 11.6 15.8 15.4 15.4 18.2 -74 -74 -86 -77 -63 -63 +26 +25.5 +24.7 +77 +77 +76 +45 +42 +42 4.6 4.5 4.2 320 +5 ID=C1 C=1.5 pF XFMR ID=L1 1 1 : n1 o o 3 ID=L2 L=5.6 nH 2 4 ID=L3 L=5.6 nH ID=C2 C=1.5 pF 1. Balun, board, and connector losses have not been extracted, but typically account of 0.4 dB loss midband and 1.1 dB loss at 860 MHz. 2. CSO, CTB, & XMOD are measured at +39 dBmV/channel, 77 channels Flat Loading. 3. OIP2 is measured at f1 + f2 at 8 dBm / tone. 4. OIP3 is measured at 8 dBm / tone with 10 MHz spacing. The transformers, L1 and L6, used on the WJ evaluation board are handwound baluns using these materials: 6 turns bifilar wire (MWS B2383211) around a ferrite core (TDK, H5C2-T3.1-1.3-1.3). An SMT transformer (M/A Com ETC1-1-13) can also be used. 12 11 10 9 8 7 0 200 400 Gain 0 -5 -10 -15 -20 -25 -30 600 800 1000 0 200 Return Loss S11 S22 400 Frequency (MHz) 7 6 5 4 3 2 0 200 400 600 800 1000 Frequency (MHz) -60 -70 -80 -90 0 100 Frequency (MHz) +39 dBmV / channel, 77 channel flat loading Noise Figure -50 CSO, CTB, & XMOD CTB XMOD 200 Frequency (MHz) Specifications and information are subject to change without notice.         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com £ ID=C3 C=100 pF ID=R1 R=560 Ohm +5 V ID=C5 C=1000 pF ID=L4 L=470 nH AH22S ID=C6 C=1000 pF XFMR ID=L6 4 o o n1 : 1 2 ID=C7 C=1000 pF 3 1 ID=L5 L=470 nH CAP ID=C4 C=100 pF ID=C8 C=1000 pF ID=R2 R=560 Ohm +5 V 600 800 1000 CSO 300 400 500 600 Page 3 of 4 April 2006 AH22S The Communications Edge TM Product Information High Dynamic Range CATV Amplifier This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 qC reflow temperature) and lead (maximum 245 qC reflow temperature) soldering processes. AH22S-G (Lead-Free Package) Mechanical Information Outline Drawing Product Marking The component will be marked with an “AH22SG” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “AH22S” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: ESD Rating: Value Test: Standard: Class 1B Passes from 500 to 1000 V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes greater than 1000 V Charge Device Model (CDM) JEDEC Standard JESD22-C101 ¤ MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020A Functional Pin Layout Land Pattern Pin 1 2 3 4 5 6 7 8 Function RF input (Amp1 input) Ground Ground RF input (Amp2 input) RF output (Amp2 output) Ground Ground RF output (Amp1 output) The backside paddle is the Source and should be grounded for thermal and electrical purposes. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance (1), Rth Junction Temperature (2), Tj Mounting Config. Notes 1000 MTTF vs. GND Tab Temperature 1. Rating -40 to +85 qC 28 qC/W 130 qC 100 2. 3. 4. Notes: 1. The thermal resistance is referenced from the hottest part of the junction to ground tab underneath the device. 2. This corresponds to the typical biasing condition of +5V, 320 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C. ¤ ¤ 10 5. 1 60 70 80 90 100 110 Tab Temperature (°C) 6. 7. 8. 9. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80/.0135” ) diameter drill and have a final plated through diameter of .25mm (.010” ) Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. To ensure reliable operation, device ground paddle-to-ground pad solder joint is critical. Add mounting screws near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. For optimal thermal performance, expose soldermask on backside where it contacts the heatsink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. If the PCB design rules allow, ground vias should be placed under the land pattern for better RF and thermal performance. Otherwise ground vias should be placed as close to the land pattern as possible. All dimensions are in mm. Angles are in degrees. Specifications and information are subject to change without notice.         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 4 of 4 April 2006