ECP100D-PCB2140

1 Watt, High Linearity InGaP HBT Amplifier ECP100D The Communications Edge TM Product Information Product Features x 400 – 2300 MHz x +31.5 dBm P1dB x +46 dBm Output IP3 Product Description The ECP100D is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. It is housed in an industry standard Leadfree/Green/RoHS-compliant 16-pin 4x4mm QFN SMT package. All devices are 100% RF and DC tested. The product is targeted for use as driver amplifier for various current and next generation wireless technologies such as GPRS, GSM, CDMA, W-CDMA, and UMTS, where high linearity and high power is required. The internal active bias allows the ECP100D to maintain high linearity over temperature and operate directly off a +5 V supply. Functional Diagram Vbias N/C 14 16 Vref 1 N/C 2 RF IN 3 N/C 4 5 N/C 6 N/C 7 N/C 8 N/C N/C 15 N/C 13 12 N/C 11 RF OUT 10 RF OUT 9 N/C x 18 dB Gain @ 900 MHz x 12 dB Gain @ 1960 MHz x Single Positive Supply (+5V) x Lead-free/Green/RoHS-compliant 16pin 4mm QFN package Applications x Final stage amplifiers for Repeaters x Mobile Infrastructure x Defense / Homeland Security Function Vref RF Input RF Output Vbias GND N/C or GND Pin No. 1 3 10, 11 16 Backside Paddle 2, 4-9, 12-15 Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) IS-95 Channel Power @ -45 dBc ACPR, 1960MHz Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm dBm dBm dB mA V 400 400 10 2140 11 18 8 +31.5 +45 +25.5 +23 6.3 450 5 500 Typ Max 2300 Parameter Frequency S21 – Gain S11 S22 Output P1dB Output IP3 IS-95A Channel Power @ -45 dBc ACPR Units MHz dB dB dB dBm dBm dBm dBm dB 7.0 900 18 -13 -7 +31 +46 +25. 5 Typical 1960 12 -11 -10 +32 +46 +25.5 +23 5.5 6.2 +5 V @ 450 mA ¢ +29 +43.8 2140 11 -18 -8 +31.5 +45 W-CDMA Channel Power @ -45 dBc ACPR, 2140 MHz W-CDMA Channel Power @ -45 dBc ACPR Noise Figure Operating Current Range , Icc (3) Device Voltage, Vcc Noise Figure Supply Bias (3) 4. Typical parameters reflect performance in a tuned application circuit at +25 C. 1. Test conditions unless otherwise noted: T = 25 ºC, Vsupply = +5 V in a tuned application circuit. 2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 10, 11 and 16. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 10.8 mA of current when used with a series bias resistor of R1=51 . (ie. total device current typically will be 461 mA.) Absolute Maximum Rating Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature Parameter -40 to +85 qC -65 to +125 qC +26 dBm +8 V 900 mA 5W +250 qC Rating Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 ¡ Ordering Information Part No. ECP100D-G ECP100D-PCB900 ECP100D-PCB1960 ECP100D-PCB2140 Description 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board (Lead-free/Green/RoHS-compliant 16-pin 4x4mm Pkg.) 1 Watt InGaP HBT Amplifier e-mail: sales@wj.com W eb site: www.wj.com Page 1 of 7 April 2006 1 Watt, High Linearity InGaP HBT Amplifier S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, calibrated to device leads) 1.0 £ ECP100D Gain / Maximum Stable Gain DB(|S(2,1)|) The Communications Edge TM Product Information Typical Device Data – ECP100D (QFN 4x4mm Package) S11 S22 6 0. 0 0 3. 30 Gain (dB) 25 20 0 4. 0 10.0 10.0 0.8 1.0 0.2 0.4 0.6 2.0 3.0 4.0 15 10 5 0 50 550 1050 1550 Frequency (MHz) 2050 2500 .4 -0 5.0 0 10.0 0.2 0.4 0.8 2.0 3.0 5.0 0.6 1.0 4.0 .4 -0 .0 -2 6 -0 . -0 . -0.8 -0.8 .0 -2 6 Swp Min 50MHz Swp Min 50MHz Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance loss plots are shown from 0.05, 0.1 and 0.2 – 4.0 GHz, with markers placed in 0.2 GHz increments. S-Parameters (Vcc = +5 V, Icc = 450 mA, T = 25 C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) ¤ S21 (dB) S21 (ang) -1.0 S12 (dB) S12 (ang) S22 (dB) -1.0 S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -1.35 -1.11 -1.09 -1.24 -1.36 -1.51 -1.88 -2.45 -3.52 -5.37 -9.94 -26.16 -10.08 -4.89 -2.68 -1.73 -1.22 -176.77 179.08 174.88 167.79 159.88 152.29 144.07 135.03 124.13 110.92 96.35 134.17 -149.55 -169.19 172.75 158.17 144.56 24.16 19.50 15.39 11.91 9.93 8.39 7.37 6.77 6.49 6.54 6.46 6.08 4.75 2.58 0.02 -2.72 -5.32 120.86 115.85 113.56 103.30 92.23 81.19 70.82 59.35 45.92 30.31 9.32 -13.70 -39.92 -63.31 -82.87 -98.11 -111.57 -39.11 -38.95 -39.17 -39.00 -37.15 -38.07 -38.22 -36.33 -35.42 -34.81 -33.63 -33.50 -35.80 -36.84 -37.99 -40.80 -43.97 18.98 8.44 8.30 -4.09 -12.20 -10.64 -7.28 -22.70 -38.76 -55.67 -73.80 -93.59 -116.52 -156.32 -159.31 148.39 152.56 -0.87 -1.00 -1.02 -0.72 -0.75 -0.87 -1.00 -1.02 -1.07 -1.15 -1.01 -1.00 -0.92 -0.88 -1.01 -0.96 -1.08 -131.71 -154.54 -167.00 -173.95 -177.40 -178.56 179.90 177.51 176.63 174.49 171.25 169.44 165.85 161.06 157.31 151.44 148.03 Application Circuit PC Board Layout Circuit Board Material: Top RF layer is .014” Getek, 4 total layers (0.062” thick) for mechanical rigidity 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8, C9 and C10. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice         WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 2 of 7 April 2006 -5. 0 -4 .0 -3 .0 -4 .0 - 5. 0 2 - 0. 2 -0. -10.0 0.2 5.0 0. 4 -10. 0 -3 .0 0. 4 35 DB(GMax()) 2. 2. 0 40 6 0. Swp Max 4000MHz Swp Max 4000MHz 0.8 0. 8 1.0 0 3. 0 4. 5.0 0.2 10.0 1 Watt, High Linearity InGaP HBT Amplifier Typical RF Performance at 25 qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) ECP100D 900 MHz 18 dB -13 dB -7.0 dB +31 dBm +46 dBm +25.5 dBm 7.0 dB +5 V 450 mA The Communications Edge TM Product Information 900 MHz Application Circuit (ECP100D-PCB900) RES ID=R1 R=51 Ohm CAP I D=C5 C=1000 pF RES ID=R2 R=22 Ohm +5 V +5.6 V zener CAP ID=C4 C=10000000 pF CAP ID=C7 C=1000 pF CAP ID=C6 C=10 pF PO RT P=1 Z=50 Ohm CAP ID=C1 C=56 pF RES ID=R3 R=51 Ohm TLINP ID=FR1 Z0=50 Ohm L=175 mil Eeff =3.16 Loss=0 F0=0 MHz 16 13 1 12 2 11 3 10 4 9 15 14 15 14 16 13 12 1 SUBCKT I D=ECP 100D NET="Q FN" 11 2 10 3 94 IND ID=L1 L=33 nH size 1008 CAP ID=C3 C=56 pF PORT P=2 Z=50 Ohm Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) CA P I D=C2 C=56 pF ·The transmission line length are from the edge of the ECP100D pins to the cent er of the component . All passive component s are of size 0603 unless ot herwise noted. CAP ID=C8 C=8.2 pF 8 5 7 6 6 7 5 8 TLINP ID=FR4 Z0=50 Ohm L=475 mil Eeff=3.16 Loss =0 F0=0 MHz CAP ID=C9 C=6.8 pF This c omponent should be placed at silk screen marker "9" on the WJ evaluation board as shown. This component should be placed at silk screen marker "C" on the WJ evaluat ion board as shown. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S21 vs. Frequency (MHz) 20 18 S21 (dB) S11 (dB) S11 vs. Frequency 0 -4 -8 -12 -16 -20 840 +25°C +85°C -40°C 860 880 900 920 940 S22 (dB) S22 vs. Frequency 0 -4 -8 -12 -16 -20 840 +25°C +85°C -40°C 860 880 900 920 940 16 14 12 10 8 840 860 +25°C +85°C -40°C 880 900 920 940 Frequency (MHz) Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 10 9 NF (dB) P1 dB vs. Frequency 34 32 P1 dB (dBm) ACPR (dBc) ACPR vs. Channel Power IS-95, 9 Ch. Fwd, ±885 KHz offset, 30 KHz Meas BW, 900 MHz -40 -45 -50 -55 -60 -65 860 880 900 Frequency (MHz) 920 940 +25°C +85°C -40°C +25°C +85°C -40°C 8 7 6 5 840 +25°C +85°C -40°C 860 880 900 920 940 30 28 26 24 840 -70 19 20 21 22 23 24 25 Output Channel Power (dBm) 26 27 Frequency (MHz) OIP3 vs. Output Power freq. = 900, 901 MHz, +25° C OIP3 vs. Temperature 50 47 OIP3 (dBm) OIP3 (dBm) OIP3 vs. Frequency 50 47 44 41 38 35 840 +25°C, +15 dBm / tone 50 47 OIP3 (dBm) freq. = 900, 901 MHz, +15 dBm 44 41 38 35 10 13 16 19 Output Power (dBm) 22 25 44 41 38 35 -40 -15 10 35 Temperature (°C ) 60 85 860 880 900 Frequency (MHz) 920 940 Specifications and information are subject to change without notice ¥ ¥ ¥ ¥ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 3 of 7 April 2006 1 Watt, High Linearity InGaP HBT Amplifier Typical RF Performance at 25 qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) ECP100D 1960 MHz 12 dB -11 dB -10 dB +32 dBm +46 dBm +25.5 dBm 5.5 dB +5 V 450 mA The Communications Edge TM Product Information 1960 MHz Application Circuit (ECP100D-PCB1960) RES ID= R1 R=51 Ohm CAP ID= C5 C= 1000 pF RES ID=R2 R=22 Ohm +5 V +5.6 V zener CAP ID=C 4 C=10000000 pF CAP ID=C 7 C=1000 pF CAP ID=C6 C=10 pF PORT P=1 Z= 50 Ohm CAP ID=C1 C=56 pF RES ID=R 3 R=51 Ohm TLINP ID=FR1 Z0=50 Ohm L=175 mil Eef f=3.16 Loss=0 F0=0 MH z 16 13 1 12 2 11 3 10 4 9 15 14 14 15 13 16 12 1 I ND I D=L1 L=18 nH size 1008 SUBC KT I D=ECP100D N ET="QFN" 11 2 10 3 94 TLINP ID=FR2 Z0=50 Ohm L=300 mil Eef f=3.16 Loss=0 F0=0 MHz CAP ID=C3 C= 56 pF PORT P=2 Z=50 Ohm Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) CAP ID= C2 C=56 pF ·The transmission line length are from the edge of the ECP100D pins t o the center of the component. All passive components are of size 0603 unless otherwise noted. CAP ID =C8 C=.8 pF 5 8 6 7 7 6 8 5 TLINP ID=FR4 Z0= 50 Ohm L=150 mil Eeff=3.16 Loss=0 F0= 0 MHz CAP ID=C9 C=3.3 pF CAP ID =C10 C= .8 This component should be placed at silk screen marker "9" on the WJ evaluation board as show n. This component should be placed at silk screen marker "C" on the W J evaluation board as show n. This component sh ould be placed between silk screen markers "2" and "3" on the WJ evaluat ion board as shown. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S21 vs. Frequency 18 16 S21 (dB) S11 (dB) S11 vs. Frequency 0 -5 -10 -15 -20 +25°C +85°C -40°C 1940 1950 1960 1970 1980 1990 S22 (dB) S22 vs. Frequency 0 -5 -10 -15 -20 -25 1930 +25 °C +85 °C -40°C 1940 1950 1960 1970 1980 1990 14 12 10 8 1930 +25°C +85°C -40°C 1940 1950 1960 1970 1980 1990 Frequency (MHz) -25 1930 Frequency (MHz) Frequency (MHz) Noise Figure vs. Frequency 8 7 NF (dB) P1 dB vs. Frequency 35 33 P1 dB (dBm) ACPR (dBc) ACPR vs. Channel Power IS-95, 9 Ch. Fwd. ±885 KHz offset, 30 KHz Meas BW, 1960 MHz 6 5 4 3 2 1 0 1930 1940 +25°C +85°C -40°C 1950 1960 1970 1980 1990 31 29 27 25 1930 +25°C +85°C -40°C 1940 1950 1960 1970 1980 1990 -40 -45 -50 -55 -60 -65 -70 -75 -80 -85 +25°C +85°C -40°C Frequency (MHz) Frequency (MHz) OIP3 vs. Frequency +25°C, 15 dBm / tone 15 16 17 18 19 20 21 22 23 24 25 26 27 Output Channel Power (dBm) OIP3 vs. Temperature 55 51 OIP3 (dBm) OIP3 vs. Output Power freq. = 1960, 1961 MHz, +25°C 55 50 45 40 35 1930 freq. = 1960, 1961 MHz, +15 dBm 50 46 OIP3 (dBm) OIP3 (dBm) 47 43 39 42 38 34 30 1940 1950 1960 1970 1980 1990 35 -40 -15 10 35 Temperature ( °C) 60 85 Frequency (MHz) 10 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice ¦ ¦ ¦ ¦ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 4 of 7 April 2006 1 Watt, High Linearity InGaP HBT Amplifier ECP100D 2140 MHz 11 dB -18 dB -8.0 dB +31.5 dBm +45 dBm +23 dBm 6.2 dB +5 V 450 mA The Communications Edge TM Product Information 2140 MHz Application Circuit (ECP100D-PCB2140) Typical RF Performance at 25 qC Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+15 dBm / tone, 1 MHz spacing) CAP ID=C5 C=1000 pF RES ID=R2 R=22 Ohm RES ID=R1 R=51 Ohm +5 V +5.6 V zener CAP ID=C4 C=10000000 pF CAP ID=C7 C=1000 pF CAP ID=C6 C=10 pF PORT P=1 Z=50 Ohm CAP ID=C1 C=56 pF RES ID=R3 R=51 Ohm TLINP ID=FR1 Z0=50 Ohm L=375 mil Eeff=3.16 Loss =0 F0=0 MHz 16 13 1 12 2 11 3 10 4 9 15 14 14 15 16 13 11 2 SUBCKT ID=ECP100D NET="QFN" 12 1 10 3 IND ID=L1 L=18 nH size 1008 Channel Power CAP ID=C3 C=56 pF PORT P=2 Z=50 Ohm (@-45 dBc ACPR, IS-95 9 channels fwd) 94 8 5 Noise Figure Device / Supply Voltage Quiescent Current (1) CAP ID=C2 C=56 pF ·The transmission line length are from the edge of the ECP100D pins to the cent er of t he component. All passive components are of size 0603 unless otherwise noted. CAP I D=C8 C=1.0 pF 6 7 7 6 8 5 This component should be plac ed at silk s creen mark er "G" on the WJ evaluation board as shown. TLINP ID=FR4 Z0=50 Ohm L=175 mil Eeff=3.16 Loss=0 F0=0 MHz CAP ID=C9 C=2.4 pF This component should be placed at silk screen marker "3" on the WJ evaluation board as shown. 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S21 vs. Frequency 15 12 S21 (dB) S11 vs. Frequency -10 -14 -18 -22 -26 -30 2110 +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 OIP3 (dBm) S11 (dB) 50 47 44 41 38 35 -40 freq. = 2140, 2141 MHz, +15 dBm / tone OIP3 vs. Temperature 9 6 3 0 2110 +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 Frequency (MHz) Frequency (MHz) -15 10 35 Temperature (°C ) 60 85 S22 vs. Frequency 0 -5 S22 (dB) Noise Figure vs. Frequency 9 8 7 6 5 4 3 2 1 0 2110 50 47 OIP3 (dBm) OIP3 vs. Frequency +25°C, +15 dBm / tone NF (dB) -10 +25°C -15 -20 2110 +85°C -40°C 2120 2130 2140 2150 2160 2170 44 41 38 35 2110 +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 Frequency (MHz) 2120 Frequency (MHz) 2130 2140 2150 Frequency (MHz) 2160 2170 P1 dB vs. Frequency 34 32 P1 dB (dBm) ACPR (dBc) ACPR vs. Channel Power -40 -45 OIP3 (dBm) 3GPP W-CDMA, Test Model 1+64 DPCH, ±5MHz offset, 2140 MHz OIP3 vs. Output Power 50 47 44 41 38 35 freq. = 2140, 2141 MHz, 25°C 30 28 26 24 2110 +25°C +85°C -40°C -50 -55 -60 +25°C +85°C -40°C 2120 2130 2140 2150 2160 2170 -65 19 20 21 22 23 Output Channel Power (dBm) 24 10 12 Frequency (MHz) 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice § § § § WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 5 of 7 April 2006 1 Watt, High Linearity InGaP HBT Amplifier ECP100D The Communications Edge TM Product Information Application Note: Reduced Bias Configurations The ECP100D, like the AH215-S8 can be configured to operate with lower bias current by varying the bias-adjust resistor – R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH215S8 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. AH215S8-PCB2140 Performance Data R1 (ohms) 51 68 100 130 180 Icq (mA) 450 400 350 300 250 Pdiss (W) 2.25 2.00 1.75 1.50 1.25 P1dB (dBm) +31.0 +30.9 +30.8 +30.6 +30.5 OIP3 (dBm) +47.1 +46.4 +46.4 +45.5 +43.6 RES ID=R1 R=51 Ohm CAP ID=C5 C=1000 pF RES ID=R2 R=22 Ohm +5 V +5.6 V zener CAP ID=C4 C=10000000 pF CAP ID=C7 C=1000 pF CAP ID=C6 C=10 pF PORT P=1 Z=50 Ohm CAP ID=C1 C=56 pF RES ID=R3 R=51 Ohm TLINP ID=FR1 Z0=50 Ohm L=375 mil Eeff=3.16 Loss =0 F0=0 MHz 13 12 11 14 15 16 1 IND ID=L1 L=18 nH size 1008 SUBCKT ID=ECP100D NET="QFN" 2 CAP ID=C3 C=56 pF PORT P=2 Z=50 Ohm 10 9 3 4 CAP ID=C2 C=56 pF ·The transmission line length are from the edge of the ECP100D pins to the cent er of t he component. All passive components are of size 0603 unless otherwise noted. CAP I D=C8 C=1.0 pF 8 7 6 5 This component should be plac ed at silk s creen mark er "G" on the WJ evaluation board as shown. TLINP ID=FR4 Z0=50 Ohm L=175 mil Eeff=3.16 Loss=0 F0=0 MHz CAP ID=C9 C=2.4 pF This component should be placed at silk screen marker "3" on the WJ evaluation board as shown. 11.5 11 2.14GHz Gain vs. Output Power 50 2.14GHz OIP3 vs. Output Power per Tone 45 10 9.5 9 8.5 16 OIP3 (dBm) Gain (dB) 10.5 Idq=450mA ’Class A’ Idq=400mA Idq=350mA Idq=300mA Idq=250mA 40 Idq=450mA ’Class A’ Idq=400mA Idq=350mA Idq=300mA Idq=250mA 10 12 14 16 18 20 22 24 35 30 18 20 22 24 26 28 30 32 Output Power (dBm) W-CDMA ACLR vs. Output Channel Power 3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset Power Out per Tone (dBm) 100 CW PAE vs. Output Power Idq=450mA ’Class A’ Idq=400mA Idq=350mA -35 Idq=450mA ’Class A’ -40 Idq=400mA Idq=300mA Idq=250mA ACLR (dBc) -45 -50 -55 -60 -65 12 PAE (%) Idq=350mA Idq=300mA Idq=250mA 10 1 14 16 18 20 22 24 W-CDMA Channel Power Out (dBm) 16 18 20 CW Tone Power Out (dBm) 22 24 26 28 30 32 Specifications and information are subject to change without notice ¨ ¨ ¨ ¨ WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com Page 6 of 7 April 2006 1 Watt, High Linearity InGaP HBT Amplifier ECP100D The Communications Edge TM Product Information This package is Lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. ECP100D-G Mechanical Information Outline Drawing Product Marking The component will be marked with an “E100G” designator with an alphanumeric lot code on the top surface of the package. The obsolete tin-lead package is marked with an “EC100D” designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ') ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114  Land Pattern MSL Rating: Level 2 at +260 C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes 1. 2. A heatsink underneath the area of the PCB for the mounted device is recommended for proper thermal operation. Damage to the device can occur without the use of one. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135” ) diameter drill and have a final plated thru diameter of .25 mm (.010” ). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. RF trace width depends upon the PC board material and construction. Use 1 oz. Copper minimum. All dimensions are in millimeters (inches). Angles are in degrees. 3. 4. 5. 6. 7. 8. Thermal Specifications Parameter Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) © Rating MTTF vs. GND Tab Temperature 1000000 MTTF (million hrs) Notes: 1. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 C. Tjc is a function of the voltage at pins 10 and 11 and the current applied to pins 10, 11, and 16 and can be calculated by: Tj = Tcase + Rth * Vcc * Icc 2. This corresponds to the typical biasing condition of +5V, 450 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 C. © © -40 to +85 qC 3 3 qC / W 159 qC 100000 10000 1000 100 50 60 70 80 90 100 Specifications and information are subject to change without notice Page 7 of 7 April 2006 Tab temperature (° C) WJ Communications, Inc ¨ ¨ ¨ ¨ Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com W eb site: www.wj.com