1N5821-T3

1N5821-T3

  • 厂商:

    WTE

  • 封装:

  • 描述:

    1N5821-T3 - 3.0A SCHOTTKY BARRIER DIODE - Won-Top Electronics

  • 详情介绍
  • 数据手册
  • 价格&库存
1N5821-T3 数据手册
WTE POWER SEMICONDUCTORS 1N5820 – 1N5822 Pb 3.0A SCHOTTKY BARRIER DIODE Features ! ! Schottky Barrier Chip Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications D A C Mechanical Data ! ! ! ! ! ! ! Case: DO-201AD, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 1.2 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 DO-201AD Dim Min Max 25.4 — A 7.20 9.50 B 1.20 1.30 C 4.80 5.30 D All Dimensions in mm Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TL = 95°C Symbol VRRM VRWM VR VR(RMS) IO IFSM @TA=25°C unless otherwise specified 1N5820 20 14 1N5821 30 21 3.0 80 1N5822 40 28 Unit V V A A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Ambient (Note 3) Operating and Storage Temperature Range @IF = 3.0A @IF = 9.4A @TA = 25°C @TA = 100°C VFM IRM Cj RJA Tj, TSTG 0.475 0.850 0.50 0.90 2.0 20 250 40 -65 to +150 0.525 0.950 V mA pF °C/W °C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 3. P.C.B. mounted, 12.7mm lead length with 63.5mm2 copper pad. 1N5820 – 1N5822 1 of 4 © 2006 Won-Top Electronics 4 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE OUTPUT CURRENT (A) Single Phase Half-Wave 60 Hz Resistive or Inductive Load 9.5mm Lead Length 30 3 10 2 1.0 1 Tj = 25ºC Pulse Width = 300µs 2% Duty Cycle 0 10 50 100 150 TL, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 0.1 0.1 0.3 0.5 0.7 0.9 1.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Voltage Characteristics 100 1000 IFSM , PEAK FORWARD SURGE CURRENT (A) Tj = 25ºC f = 1MHz 80 60 Cj, JUNCTION CAPACITANCE (pF) 100 40 20 8.3ms Single Half Sine-Wave JEDEC Method 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Sur g e Current 100 10 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 1N5820 – 1N5822 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION TAPING SPECIFICATIONS 0.8mm MAX 10mm 1N582x WTE Cathode 1N582x x WTE = Polarity Band = Device Number = 0, 1 or 2 = Manufacturer’s Logo 1.2mm MAX 6mm 52.4mm Cathode Tape: Red Anode Tape: White 0.8mm MAX PACKAGING INFORMATION TAPE & BOX TAPE & REEL Product ID Label 150mm Inspection Hole (both ends) 330mm 255mm 75mm BULK 80±5mm 40mm 200mm Product ID Label 85mm Packaging TAPE & REEL TAPE & BOX BULK Reel Diameter / Box Size (mm) 330 255 x 75 x 150 200 x 85 x 40 Quantity (PCS) 1,200 1,200 500 Carton Size (mm) 370 x 370 x 420 400 x 273 x 415 459 x 214 x 256 Quantity (PCS) 6,000 12,000 12,500 Approx. Gross Weight (KG) 10.0 17.0 16.0 Note: 1. Paper reel, white or gray color. Core material: plastic or metal. 2. Components are packed in accordance with EIA standard RS-296-E. 1N5820 – 1N5822 3 of 4 © 2006 Won-Top Electronics ORDERING INFORMATION Product No. 1N5820-T3 1N5820-TB 1N5820 1N5821-T3 1N5821-TB 1N5821 1N5822-T3 1N5822-TB 1N5822 1. 2. 3. Package Type DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD Shipping Quantity 1200/Tape & Reel 1200/Tape & Box 500 Units/Box 1200/Tape & Reel 1200/Tape & Box 500 Units/Box 1200/Tape & Reel 1200/Tape & Box 500 Units/Box Products listed in bold are WTE Preferred devices. Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. To order RoHS / Lead Free version (with Lead Free finish), add “-LF” suffix to part number above. For example, 1N5820-TB-LF. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com We power your everyday. 1N5820 – 1N5822 4 of 4 © 2006 Won-Top Electronics
1N5821-T3
1. 物料型号: - 1N5820、1N5821、1N5822是三个型号的肖特基势垒整流行波二极管。

2. 器件简介: - 这些二极管具备肖特基势垒芯片结构,具有瞬态保护、高电流能力、低功耗、高效率、高浪涌电流能力等特点,适用于低电压、高频逆变器、自由轮流通道和极性保护应用。

3. 引脚分配: - 封装形式为DO-201AD,塑封,带有标记的阴极带。

4. 参数特性: - 包括但不限于反向重复峰值电压、工作峰值反向电压、直流阻断电压、RMS反向电压、平均整流输出电流、非重复峰值正向浪涌电流、正向电压、反向峰值电流、典型结电容和典型热阻等。

5. 功能详解: - 提供了正向电流降额曲线、典型正向电压特性、峰值正向浪涌电流和典型结电容等图表,以说明器件性能。

6. 应用信息: - 这些二极管适用于低电压、高频率的逆变器、自由轮流通道和极性保护等应用。

7. 封装信息: - 提供了详细的封装尺寸、重量、安装位置、标记和无铅版本信息。 - 封装类型为DO-201AD,尺寸参数包括A、B、C、D等,所有尺寸单位为毫米,重量约为1.2克。 - 无铅版本可通过在型号后加“-LF”后缀来订购。
1N5821-T3 价格&库存

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