ER1000F

WTE POWER SEMICONDUCTORS ER1000F – ER1006F 10A ISOLATION SUPER-FAST GLASS PASSIVATED RECTIFIER Features ! ! ! ! ! ! Glass Passivated Die Construction Super-Fast Switching for High Efficiency High Current Capability C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O












































D F P I L H B ITO-220A Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm A PIN1 2 Mechanical Data ! ! ! ! ! ! Case: ITO-220A Full Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number E PIN 1+ J K PIN 2 - Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. ER 1000F 50 35 @TA=25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 105°C Symbol VRRM VRWM VR VR(RMS) IO ER ER ER 1001F 1001AF 1002F 100 70 150 105 200 140 10 ER 1003F 300 210 ER 1004F 400 280 ER 1006F 600 420 Unit V V A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range @IF = 10A @TA = 25°C @TA = 100°C IFSM VFM IRM trr Cj Tj, TSTG 35 70 0.95 150 1.3 10 500 50 50 -65 to +150 1.7 A V µA nS pF °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. ER1000F – ER1006F 1 of 3 © 2002 Won-Top Electronics 8 IF, INSTANTANEOUS FORWARD CURRENT (A) 10 I(AV), AVERAGE FORWARD CURRENT (A) 100 1000F - 1002F 1003F - 1004F 10 6 4 1006F 1.0 2 Pulse width = 300µs 2% duty cycle 0 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.1 0.2 0.6 1.0 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 400 180 IFSM, PEAK FORWARD SURGE CURRENT (A) 8.3 ms single half-sine-wave JEDEC method 150 1000F - 1002F 120 Cj, CAPACITANCE (pF) 100 90 60 1003F - 1006F 30 10 0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance ER1000F – ER1006F 2 of 3 © 2002 Won-Top Electronics ORDERING INFORMATION Product No. ER1000F ER1001F ER1001AF ER1002F ER1003F ER1004F ER1006F Package Type ITO-220A ITO-220A ITO-220A ITO-220A ITO-220A ITO-220A ITO-220A Shipping Quantity 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com We power your everyday. © 2002 Won-Top Electronics ER1000F – ER1006F 3 of 3