WTE
POWER SEMICONDUCTORS
ER1000 – ER1006
10A SUPER-FAST GLASS PASSIVATED RECTIFIER
Features
! ! ! ! ! ! Glass Passivated Die Construction Super-Fast Switching for High Efficiency High Current Capability C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O D F P I L H B
TO-220A Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm
A
PIN1 2
Mechanical Data
! ! ! ! ! ! Case: TO-220A Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number
E
PIN 1 +
+ Case
J K
PIN 2 -
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. ER 1000 50 35
@TA=25°C unless otherwise specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 105°C
Symbol VRRM VRWM VR VR(RMS) IO
ER 1001 100 70
ER 1001A 150 105
ER 1002 200 140 10
ER 1003 300 210
ER 1004 400 280
ER 1006 600 420
Unit
V V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range @IF = 10A @TA = 25°C @TA = 100°C
IFSM VFM IRM trr Cj Tj, TSTG 35 70 0.95
150 1.3 10 500 50 50 -65 to +150 1.7
A V µA nS pF °C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
ER1000 – ER1006
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© 2002 Won-Top Electronics
8
IF, INSTANTANEOUS FORWARD CURRENT (A)
10 I(AV), AVERAGE FORWARD CURRENT (A)
100
1000 - 1002
1003 - 1004
10
6
4
1006
1.0
2
Pulse width = 300µs 2% duty cycle
0 0 50 100 150 TC, CASE TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve
0.1 0.2 0.6 1.0 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics
400
180 IFSM, PEAK FORWARD SURGE CURRENT (A)
8.3 ms single half-sine-wave JEDEC method
150
1000 - 1002
120
Cj, CAPACITANCE (pF)
100
90
60
1003 - 1006
30
10
0 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current 100
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance
ER1000 – ER1006
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© 2002 Won-Top Electronics
ORDERING INFORMATION
Product No.
ER1000 ER1001 ER1001A ER1002 ER1003 ER1004 ER1006
Package Type
TO-220A TO-220A TO-220A TO-220A TO-220A TO-220A TO-220A
Shipping Quantity
50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube
Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department.
Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval.
Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com
We power your everyday.
© 2002 Won-Top Electronics
ER1000 – ER1006
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