GS1G

GS1G

  • 厂商:

    WTE

  • 封装:

  • 描述:

    GS1G - 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE - Won-Top Electronics

  • 详情介绍
  • 数据手册
  • 价格&库存
GS1G 数据手册
WTE POWER SEMICONDUCTORS GS1A – GS1M Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! ! ! ! ! ! ! Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss A Built-in Strain Relief F Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E SMA/DO-214AC Dim Min Max 2.50 2.90 A 4.00 4.60 B 1.20 1.60 C 0.152 0.305 D 4.80 5.28 E 2.00 2.44 F 0.051 0.203 G 0.76 1.52 H All Dimensions in mm D Mechanical Data ! ! ! ! ! ! Case: SMA/DO-214AC, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range @IF = 1.0A @TA = 25°C @TA = 125°C Symbol VRRM VRWM VR VR(RMS) IO GS1A @TA=25°C unless otherwise specified GS1B GS1D GS1G GS1J GS1K GS1M Unit 50 35 100 70 200 140 400 280 1.0 600 420 800 560 1000 700 V V A IFSM VFM IRM trr Cj RJL Tj, TSTG 30 1.10 5.0 200 2.5 15 30 -65 to +175 A V µA µS pF °C/W °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A, 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. GS1A – GS1M 1 of 4 © 2006 Won-Top Electronics 0.8 IF, INSTANTANEOUS FORWARD CURRENT (A) 1.0 IO, AVERAGE OUTPUT CURRENT (A) 10 1.0 0.6 0.4 0.1 0.2 Resistive or inductive load 0 40 Tj = 25°C PULSE WIDTH = 300µs 2% DUTY CYCLE 0.01 0 0.4 0.8 1.2 1.6 60 80 100 120 140 160 180 TL , LEAD TEMPERATURE ( °C ) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 30 IFSM, PEAK FORWARD SURGE CURRENT (A) 8.3ms Single half sine-wave JEDEC Method 25 IR, INSTANTANEOUS REVERSE CURRENT (µA) 1000 100 Tj = 125°C 20 10 15 1.0 Tj = 25°C 10 0.1 5 1 10 100 0.01 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics NUMBER OF CYCLES @ 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current GS1A – GS1M 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION RECOMMENDED FOOTPRINT WTE GS1x Cathode WTE GS1x x = Polarity Band = Manufacturer’s Logo = Device Number = A, B, D, G, J, K or M 0.050 MIN (1.27 MIN) 0.058 MIN (1.47 MIN) 0.083 MAX (2.11 MAX) inches(mm) PACKAGING INFORMATION TAPE & REEL Direction of Unreeling 4mm 330mm 12mm 4mm 12mm Product ID Label 1.6mm Reel Diameter (mm) 330 Quantity (PCS) 5,000 Inner Box Size L x W x H (mm) 340 x 337 x 45 Quantity (PCS) 10,000 Carton Size L x W x H (mm) 370 x 370 x 420 Quantity (PCS) 80,000 Approx. Gross Weight (KG) 14.0 Note: 1. Paper reel, white or gray color. 2. Components are packed in accordance with EIA standard 481-1 and 481-2. GS1A – GS1M 3 of 4 © 2006 Won-Top Electronics ORDERING INFORMATION Product No. GS1A-T3 GS1B-T3 GS1D-T3 GS1G-T3 GS1J-T3 GS1K-T3 GS1M-T3 1. 2. Package Type SMA SMA SMA SMA SMA SMA SMA Shipping Quantity 5000/Tape & Reel 5000/Tape & Reel 5000/Tape & Reel 5000/Tape & Reel 5000/Tape & Reel 5000/Tape & Reel 5000/Tape & Reel Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. To order RoHS / Lead Free version (with Lead Free finish), add “-LF” suffix to part number above. For example, GS1A-T3-LF. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com We power your everyday. © 2006 Won-Top Electronics GS1A – GS1M 4 of 4
GS1G
1. 物料型号: - 型号包括GS1A、GS1B、GS1D、GS1G、GS1J、GS1K和GS1M。

2. 器件简介: - 该器件为表面贴装玻璃钝化标准二极管,具有玻璃钝化芯片结构,适合自动装配,具有低正向电压降、承受高达30A的浪涌过载等级、低功耗、内置应变缓解功能,塑料外壳材料具有UL可燃性94V-0等级。

3. 引脚分配: - 极性标识为阴极带或阴极凹口,标记为型号编号。

4. 参数特性: - 峰值重复反向电压(VRRM/VRWM)范围从50V至1000V不等。 - 正弦波反向电压(VR(RMS))范围从35V至700V不等。 - 平均整流输出电流@TL=100°C(IO)为1.0A。 - 非重复峰值正向浪涌电流(IFSM)为30A。 - 正向电压@IF = 1.0A(VFM)为1.10V。 - 在额定直流阻断电压下@T峰值反向电流@T A = 25°C(IRM)为5.0µA。 - 反向恢复时间(trr)为2.5µS。 - 典型结电容(Cj)为15pF。 - 典型热阻(RJL)为30°C/W。 - 工作和存储温度范围(Tj, TSTG)为-65至+175°C。

5. 功能详解: - 该二极管适用于需要高浪涌承受能力和低功耗的应用场合,如电源整流、变频器、电机控制等。

6. 应用信息: - 适用于自动装配线,由于其低正向电压降和高浪涌承受能力,适合于各种电源和信号处理应用。

7. 封装信息: - 封装为SMA/DO-214AC,塑封塑料,引脚为镀锡可焊,符合MIL-STD-750方法2026。

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