S1A

S1A

  • 厂商:

    WTE

  • 封装:

  • 描述:

    S1A - 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE - Won-Top Electronics

  • 详情介绍
  • 数据手册
  • 价格&库存
S1A 数据手册
WTE POWER SEMICONDUCTORS S1A – S1M Pb 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE Features ! ! ! ! ! ! ! Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Power Loss A Built-in Strain Relief F Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E SMB/DO-214AA Dim Min Max 3.30 3.94 A 4.06 4.70 B 1.91 2.11 C 0.152 0.305 D 5.08 5.59 E 2.13 2.44 F 0.051 0.203 G 0.76 1.27 H All Dimensions in mm D Mechanical Data ! ! ! ! ! ! Case: SMB/DO-214AA, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.093 grams (approx.) Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 Maximum Ratings and Electrical Characteristics Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TL = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range @IF = 1.0A @TA = 25°C @TA = 125°C Symbol VRRM VRWM VR VR(RMS) IO S1A @TA=25°C unless otherwise specified S1B S1D S1G S1J S1K S1M Unit 50 35 100 70 200 140 400 280 1.0 600 420 800 560 1000 700 V V A IFSM VFM IRM trr Cj RJL Tj, TSTG 30 1.10 5.0 200 2.5 15 30 -65 to +175 A V µA µS pF °C/W °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A, 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. S1A – S1M 1 of 4 © 2006 Won-Top Electronics 0.8 IF, INSTANTANEOUS FORWARD CURRENT (A) 1.0 IO, AVERAGE OUTPUT CURRENT (A) 10 1.0 0.6 0.4 0.1 0.2 Resistive or inductive load 0 40 Tj = 25°C PULSE WIDTH = 300µs 2% DUTY CYCLE 0.01 0 0.4 0.8 1.2 1.6 60 80 100 120 140 160 180 TL , LEAD TEMPERATURE ( °C ) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 30 IFSM, PEAK FORWARD SURGE CURRENT (A) 8.3ms Single half sine-wave JEDEC Method 25 IR, INSTANTANEOUS REVERSE CURRENT (µA) 1000 100 Tj = 125°C 20 10 15 1.0 Tj = 25°C 10 0.1 5 1 10 100 0.01 0 40 80 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics NUMBER OF CYCLES @ 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current S1A – S1M 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION RECOMMENDED FOOTPRINT WTE S1x Cathode WTE S1x x = Polarity Band = Manufacturer’s Logo = Device Number = A, B, D, G, J, K or M 0.050 MIN (1.27 MIN) 0.082 MIN (2.10 MIN) 0.106 MAX (2.65 MAX) inches(mm) PACKAGING INFORMATION TAPE & REEL Direction of Unreeling 8mm 330mm 12mm 4mm 12mm Product ID Label 1.6mm Reel Diameter (mm) 330 Quantity (PCS) 3,000 Inner Box Size L x W x H (mm) 340 x 337 x 45 Quantity (PCS) 6,000 Carton Size L x W x H (mm) 370 x 370 x 420 Quantity (PCS) 48,000 Approx. Gross Weight (KG) 14.0 Note: 1. Paper reel, white or gray color. 2. Components are packed in accordance with EIA standard 481-1 and 481-2. S1A – S1M 3 of 4 © 2006 Won-Top Electronics ORDERING INFORMATION Product No. S1A-T3 S1B-T3 S1D-T3 S1G-T3 S1J-T3 S1K-T3 S1M-T3 1. 2. Package Type SMB SMB SMB SMB SMB SMB SMB Shipping Quantity 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. To order RoHS / Lead Free version (with Lead Free finish), add “-LF” suffix to part number above. For example, S1A-T3-LF. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com We power your everyday. S1A – S1M 4 of 4 © 2006 Won-Top Electronics
S1A
### 物料型号 - 型号:S1A-S1M

### 器件简介 - 特点: - 玻璃钝化芯片结构 - 适合自动组装 - 低正向电压降 - 峰值浪涌额定值可达30A - 低功耗 - 内置应变缓解 - 塑料外壳材料具有UL阻燃等级 - 分类等级94V-0

### 引脚分配 - 外壳:SMB/DO-214AA,模塑塑料 - 端子:镀锡,可焊性,符合MIL-STD-750, 方法2026 - 标记:类型编号

### 参数特性 - 最大额定值和电气特性(@T25C除非另有说明): - 峰值重复反向电压(VRRM):S1A为50V,S1B为100V,S1D为200V,S1G为400V,S1J为600V,S1K为800V,S1M为1000V - 工作峰值反向电压(VRWM):同上 - 直流阻断电压(VR):同上 - 额定电流下的均方根反向电压(VR(RMS)):S1A为35V,S1B为70V,S1D为140V,S1G为280V,S1J为420V,S1K为560V,S1M为700V - 平均整流输出电流@T=100°C(Io):S1G为1.0A - 非重复峰值正向浪涌电流(IFSM):S1G为30A - 正向电压@I=1.0A(VFM):S1G为1.10V - 额定直流阻断电压下的峰值反向电流(IRM):S1G为5.0A,S1D为200A - 反向恢复时间(trr):S1K为2.5μs - 典型结电容(Cj):S1D为15pF - 典型热阻(RθJL):S1D为30°C/W - 工作和存储温度范围(T,TSTG):-65至+175°C

### 功能详解 - 正向电流降额曲线(图1) - 典型正向特性(图2) - 最大非重复峰值正向浪涌电流(图3) - 典型反向特性(图4)

### 应用信息 - 标记信息:推荐足迹 - 极性带:阴极=极性带,WTE=制造商标志,S1x=器件编号=A, B, D, G, J, K或M

### 封装信息 - 胶带和卷轴: - 卷轴直径(mm):330 - 数量(PCS):3000 - 内盒尺寸LxWxH(mm):340 x 337x45 - 数量(PCS):6000 - 纸箱尺寸LxWxH(mm):370x370x420 - 数量(PCS):48000 - 毛重(KG):14.0

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