SB2580CT

WTE POWER SEMICONDUCTORS SB2520CT – SB25100CT 25A SCHOTTKY BARRIER RECTIFIER Features ! ! ! ! ! ! Schottky Barrier Chip Guard Ring for Transient Protection High Current Capability, Low Forward C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O












































D F P I L H B TO-220 Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 2.41 2.67 All Dimensions in mm A PIN1 2 3 Mechanical Data ! ! ! ! ! ! Case: TO-220 Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-750, Method 2026 Polarity: As Marked on Body Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number E PIN 1 - + Case PIN 2 J K PIN 3 - Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SB 2520CT @TA=25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 95°C Symbol VRRM VRWM VR VR(RMS) IO SB 2530CT SB 2540CT SB 2550CT SB 2560CT SB SB Unit 2580CT 25100CT 20 14 30 21 40 28 50 35 25 60 42 80 56 100 70 V V A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage @IF = 12.5A @TA = 25°C @TA = 100°C IFSM VFM IRM Cj Tj, TSTG 0.55 200 0.75 0.5 100 1100 -65 to +150 0.85 A V mA pF °C Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. SB2520CT – SB25100CT 1 of 3 © 2002 Won-Top Electronics 25 40 20 IF, NSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE OUTPUT CURRENT (A) 2520CT - 2540CT 20 15 2550CT - 2560CT 2580CT - 25100CT 10 10 5 Single Pulse Half-Wave 60 Hz Resistive or Inductive Load Tj = 25ºC Pulse Width = 300 µs 2% Duty Cycle 0 10 40 60 80 100 120 140150 1 0 0.5 1.0 1.5 2.0 2.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TC, CASE TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 250 2000 Tj = 25ºC f = 1MHz IFSM , PEAK FORWARD SURGE CURRENT (A) 200 Cj, CAPACITANCE (pF) 8.3ms Single Half Sine-Wave JEDEC Method 150 1000 100 50 100 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance SB2520CT – SB25100CT 2 of 3 © 2002 Won-Top Electronics ORDERING INFORMATION Product No. SB2520CT SB2530CT SB2540CT SB2550CT SB2560CT SB2580CT SB25100CT Package Type TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 Shipping Quantity 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com We power your everyday. © 2002 Won-Top Electronics SB2520CT – SB25100CT 3 of 3