SB880F

WTE POWER SEMICONDUCTORS SB820F – SB8100F 8.0A ISOLATION SCHOTTKY BARRIER RECTIFIER Features ! ! ! ! ! ! Schottky Barrier Chip Guard Ring for Transient Protection High Current Capability, Low Forward C Low Reverse Leakage Current High Surge Current Capability G Plastic Material has UL Flammability Classification 94V-O












































D F P I L H B ITO-220A Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm A PIN1 2 Mechanical Data ! ! ! ! ! ! Case: ITO-220A Full Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 2.24 grams (approx.) Mounting Position: Any Marking: Type Number E PIN 1 + J K PIN 2 - Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SB 820F 20 14 @TA=25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 95°C Symbol VRRM VRWM VR VR(RMS) IO SB 830F 30 21 SB 840F 40 28 SB 850F 50 35 8.0 SB 860F 60 42 SB 880F 80 56 SB 8100F 100 70 Unit V V A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance (Note 1) Typical Thermal Resistance Junction to Case (Note 2) Operating and Storage Temperature Range @IF = 8.0A @TA = 25°C @TA = 100°C IFSM VFM IRM Cj R
JC Tj, TSTG 0.55 150 0.75 0.5 50 700 6.9 -65 to +150 0.85 A V mA pF K/W °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Thermal resistance junction to case mounted on heatsink. SB820F – SB8100F 1 of 3 © 2002 Won-Top Electronics 10 40 8 IF, NSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE OUTPUT CURRENT (A) 820F - 840F 20 6 850F - 860F 880F - 8100F 4 10 2 Single Pulse Half-Wave 60 Hz Resistive or Inductive Load Tj = 25ºC Pulse Width = 300 µs 2% Duty Cycle 0 10 40 60 80 100 120 140150 0.1 0 0.5 1.0 1.5 2.0 2.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics TL, LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve 150 2000 Tj = 25ºC f = 1MHz IFSM , PEAK FORWARD SURGE CURRENT (A) 120 Cj, CAPACITANCE (pF) 8.3ms Single Half Sine-Wave JEDEC Method 90 1000 60 30 100 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current 0.1 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance SB820F – SB8100F 2 of 3 © 2002 Won-Top Electronics ORDERING INFORMATION Product No. SB820F SB830F SB840F SB850F SB860F SB880F SB8100F Package Type ITO-220A ITO-220A ITO-220A ITO-220A ITO-220A ITO-220A ITO-220A Shipping Quantity 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life support devices or systems without the express written approval. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com We power your everyday. © 2002 Won-Top Electronics SB820F – SB8100F 3 of 3