X28HC256EM-90

X28HC256 256K X28HC256 5 Volt, Byte Alterable E2PROM DESCRIPTION 32K x 8 Bit FEATURES • • • • • • • Access Time: 70ns Simple Byte and Page Write —Single 5V Supply — No External High Voltages or VPP Control Circuits —Self-Timed — No Erase Before Write — No Complex Programming Algorithms —No Overerase Problem Low Power CMOS: —Active: 60mA —Standby: 500µA Software Data Protection —Protects Data Against System Level Inadvertent Writes High Speed Page Write Capability Highly Reliable Direct Write™ Cell —Endurance: 100,000 Write Cycles —Data Retention: 100 Years Early End of Write Detection — DATA Polling —Toggle Bit Polling The X28HC256 is a second generation high performance CMOS 32K x 8 E2PROM. It is fabricated with Xicor’s proprietary, textured poly floating gate technology, providing a highly reliable 5 Volt only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle and enabling the entire memory to be typically rewritten in less than 0.8 seconds. The X28HC256 also features DATA Polling and Toggle Bit Polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard Software Data Protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years. PIN CONFIGURATION PLASTIC DIP CERDIP FLAT PACK SOIC A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 X28HC256 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/04 I/O3 A6 A5 A4 A3 A2 A1 A0 NC I/O0 5 6 7 8 9 10 11 12 X28HC256 A7 LCC PLCC VCC A12 A14 A13 WE NC TSOP 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 A8 A9 A11 NC OE A10 CE I/O7 I/O6 A2 A1 A0 I/O0 I/O1 I/O2 NC VSS NC I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A3 A4 A5 A6 A7 A12 A14 NC VCC NC WE A13 A8 A9 A11 OE X28HC256 21 13 14 15 16 17 18 19 20 I/O1 I/O2 VSS NC I/O3 I/O4 I/O5 3859 ILL F22 3859 FHD F03 3859 FHD F02 ©Xicor, Inc. 1991, 1995 Patents Pending 3859-2.8 8/5/97 T1/C0/D0 EW 1 Characteristics subject to change without notice X28HC256 PIN DESCRIPTIONS Addresses (A0–A14) The Address inputs select an 8-bit memory location during a read or write operation. Chip Enable (CE) The Chip Enable input must be LOW to enable all read/ write operations. When CE is HIGH, power consumption is reduced. Output Enable (OE) The Output Enable input controls the data output buffers and is used to initiate read operations. Data In/Data Out (I/O0–I/O7) Data is written to or read from the X28HC256 through the I/O pins. Write Enable (WE) The Write Enable input controls the writing of data to the X28HC256. PIN NAMES Symbol A0–A14 I/O0–I/O7 WE CE OE VCC VSS NC PIN CONFIGURATION PGA I/O1 I/O2 I/O3 I/O6 I/O5 12 13 15 18 17 I/O0 A0 11 10 A1 A3 A5 A2 A4 A12 VSS I/O4 I/O7 14 16 19 CE 20 OE 22 VCC A9 28 24 A14 WE 27 A10 21 A11 23 A8 25 A13 26 Description Address Inputs Data Input/Output Write Enable Chip Enable Output Enable +5V Ground No Connect 3859 PGM T01 9 8 7 6 5 2 4 A6 3 A7 1 FUNCTIONAL DIAGRAM X28HC256 (BOTTOM VIEW) 3859 FHD F04 X BUFFERS LATCHES AND DECODER A0–A14 ADDRESS INPUTS Y BUFFERS LATCHES AND DECODER 256K-BIT E2PROM ARRAY I/O BUFFERS AND LATCHES I/O0–I/O7 DATA INPUTS/OUTPUTS CE OE WE VCC VSS 3859 FHD F01 CONTROL LOGIC AND TIMING 3859 FHD F01 2 X28HC256 DEVICE OPERATION Read Read operations are initiated by both OE and CE LOW. The read operation is terminated by either CE or OE returning HIGH. This two line control architecture eliminates bus contention in a system environment. The data bus will be in a high impedance state when either OE or CE is HIGH. Write Write operations are initiated when both CE and WE are LOW and OE is HIGH. The X28HC256 supports both a CE and WE controlled write cycle. That is, the address is latched by the falling edge of either CE or WE, whichever occurs last. Similarly, the data is latched internally by the rising edge of either CE or WE, whichever occurs first. A byte write operation, once initiated, will automatically continue to completion, typically within 3ms. Page Write Operation The page write feature of the X28HC256 allows the entire memory to be written in typically 0.8 seconds. Page write allows up to one hundred twenty-eight bytes of data to be consecutively written to the X28HC256 prior to the commencement of the internal programming cycle. The host can fetch data from another device within the system during a page write operation (change the source address), but the page address (A7 through A14) for each subsequent valid write cycle to the part during this operation must be the same as the initial page address. The page write mode can be initiated during any write operation. Following the initial byte write cycle, the host can write an additional one to one hundred twentyseven bytes in the same manner as the first byte was written. Each successive byte load cycle, started by the WE HIGH to LOW transition, must begin within 100µs of the falling edge of the preceding WE. If a subsequent WE HIGH to LOW transition is not detected within 100µs, the internal automatic programming cycle will commence. There is no page write window limitation. Effectively the page write window is infinitely wide, so long as the host continues to access the device within the byte load cycle time of 100µs. Write Operation Status Bits The X28HC256 provides the user two write operation status bits. These can be used to optimize a system write cycle time. The status bits are mapped onto the I/O bus as shown in Figure 1. Figure 1. Status Bit Assignment I/O DP TB 5 4 3 2 1 0 RESERVED TOGGLE BIT DATA POLLING 3859 FHD F11 DATA Polling (I/O7) The X28HC256 features DATA Polling as a method to indicate to the host system that the byte write or page write cycle has completed. DATA Polling allows a simple bit test operation to determine the status of the X28HC256, eliminating additional interrupt inputs or external hardware. During the internal programming cycle, any attempt to read the last byte written will produce the complement of that data on I/O7 (i.e., write data = 0xxx xxxx, read data = 1xxx xxxx). Once the programming cycle is complete, I/O7 will reflect true data. Toggle Bit (I/O6) The X28HC256 also provides another method for determining when the internal write cycle is complete. During the internal programming cycle I/O6 will toggle from HIGH to LOW and LOW to HIGH on subsequent attempts to read the device. When the internal cycle is complete the toggling will cease and the device will be accessible for additional read and write operations. 3 X28HC256 DATA POLLING I/O7 Figure 2. DATA Polling Bus Sequence LAST WRITE WE CE OE VIH I/O7 HIGH Z VOL An An An An An An An 3859 FHD F12 VOH X28HC256 READY A0–A14 Figure 3. DATA Polling Software Flow DATA Polling can effectively halve the time for writing to the X28HC256. The timing diagram in Figure 2 illustrates the sequence of events on the bus. The software flow diagram in Figure 3 illustrates one method of implementing the routine. WRITE DATA WRITES COMPLETE? YES SAVE LAST DATA AND ADDRESS NO READ LAST ADDRESS IO7 COMPARE? YES X28HC256 READY NO 3859 FHD F13 4 X28HC256 THE TOGGLE BIT I/O6 Figure 4. Toggle Bit Bus Sequence LAST WRITE WE CE OE VOH * VOL I/O6 HIGH Z * X28HC256 READY * I/O6 beginning and ending state of I/O6 will vary. 3859 FHD F14 Figure 5. Toggle Bit Software Flow The Toggle Bit can eliminate the software housekeeping chore of saving and fetching the last address and data written to a device in order to implement DATA Polling. This can be especially helpful in an array comprised of multiple X28HC256 memories that is frequently updated. The timing diagram in Figure 4 illustrates the sequence of events on the bus. The software flow diagram in Figure 5 illustrates a method for polling the Toggle Bit. LAST WRITE YES LOAD ACCUM FROM ADDR n COMPARE ACCUM WITH ADDR n COMPARE OK? YES X28HC256 READY NO 3859 FHD F15 5 X28HC256 HARDWARE DATA PROTECTION The X28HC256 provides two hardware features that protect nonvolatile data from inadvertent writes. circuits by employing the software data protection feature. The internal software data protection circuit is enabled after the first write operation utilizing the software algorithm. This circuit is nonvolatile and will remain set for the life of the device unless the reset command is issued. Once the software protection is enabled, the X28HC256 is also protected from inadvertent and accidental writes in the powered-up state. That is, the software algorithm must be issued prior to writing additional data to the device. SOFTWARE ALGORITHM Selecting the software data protection mode requires the host system to precede data write operations by a series of three write operations to three specific addresses. Refer to Figure 6 and 7 for the sequence. The three-byte sequence opens the page write window enabling the host to write from one to one hundred twenty-eight bytes of data. Once the page load cycle has been completed, the device will automatically be returned to the data protected state. • Default VCC Sense—All write functions are inhibited when VCC is ≤ 3.5V Typically. • Write Inhibit—Holding either OE LOW, WE HIGH, or CE HIGH will prevent an inadvertent write cycle during power-up and power-down, maintaining data integrity. SOFTWARE DATA PROTECTION The X28HC256 offers a software controlled data protection feature. The X28HC256 is shipped from Xicor with the software data protection NOT ENABLED; that is, the device will be in the standard operating mode. In this mode data should be protected during power-up/down operations through the use of external circuits. The host would then have open read and write access of the device once VCC was stable. The X28HC256 can be automatically protected during power-up and power-down without the need for external 6 X28HC256 SOFTWARE DATA PROTECTION Figure 6. Timing Sequence—Byte or Page Write VCC 0V DATA ADDRESS CE ≤tBLC MAX WE AA 5555 55 2AAA A0 5555 tWC WRITE PROTECTED (VCC) WRITES OK BYTE OR PAGE 3859 FHD F16 Figure 7. Write Sequence for Software Data Protection Regardless of whether the device has previously been protected or not, once the software data protection algorithm is used and data has been written, the X28HC256 will automatically disable further writes unless another command is issued to cancel it. If no further commands are issued the X28HC256 will be write protected during power-down and after any subsequent power-up. WRITE DATA AA TO ADDRESS 5555 WRITE DATA 55 TO ADDRESS 2AAA Note: Once initiated, the sequence of write operations should not be interrupted. WRITE DATA A0 TO ADDRESS 5555 BYTE/PAGE LOAD ENABLED WRITE DATA XX TO ANY ADDRESS WRITE LAST BYTE TO LAST ADDRESS OPTIONAL BYTE OR PAGE WRITE ALLOWED AFTER tWC RE-ENTERS DATA PROTECTED STATE 3859 FHD F06 7 X28HC256 RESETTING SOFTWARE DATA PROTECTION Figure 8. Reset Software Data Protection Timing Sequence VCC DATA ADDRESS CE AA 5555 55 2AAA 80 5555 AA 5555 55 2AAA 20 5555 tWC STANDARD OPERATING MODE WE 3859 FHD F18 Figure 9. Write Sequence for resetting Software Data Protection In the event the user wants to deactivate the software data protection feature for testing or reprogramming in an E2PROM programmer, the following six step algorithm will reset the internal protection circuit. After tWC, the X28HC256 will be in standard operating mode. WRITE DATA AA TO ADDRESS 5555 WRITE DATA 55 TO ADDRESS 2AAA Note: Once initiated, the sequence of write operations should not be interrupted. WRITE DATA 80 TO ADDRESS 5555 WRITE DATA AA TO ADDRESS 5555 WRITE DATA 55 TO ADDRESS 2AAA WRITE DATA 20 TO ADDRESS 5555 AFTER tWC, RE-ENTERS UNPROTECTED STATE 3859 FHD F19 8 X28HC256 SYSTEM CONSIDERATIONS Because the X28HC256 is frequently used in large memory arrays it is provided with a two line control architecture for both read and write operations. Proper usage can provide the lowest possible power dissipation and eliminate the possibility of contention where multiple I/O pins share the same bus. To gain the most benefit it is recommended that CE be decoded from the address bus and be used as the primary device selection input. Both OE and WE would then be common among all devices in the array. For a read operation this assures that all deselected devices are in their standby mode and that only the selected device(s) is outputting data on the bus. Because the X28HC256 has two power modes, standby and active, proper decoupling of the memory array is of prime concern. Enabling CE will cause transient current spikes. The magnitude of these spikes is dependent on the output capacitive loading of the l/Os. Therefore, the larger the array sharing a common bus, the larger the transient spikes. The voltage peaks associated with the current transients can be suppressed by the proper selection and placement of decoupling capacitors. As a minimum, it is recommended that a 0.1µF high frequency ceramic capacitor be used between VCC and VSS at each device. Depending on the size of the array, the value of the capacitor may have to be larger. In addition, it is recommended that a 4.7µF electrolytic bulk capacitor be placed between VCC and VSS for each eight devices employed in the array. This bulk capacitor is employed to overcome the voltage droop caused by the inductive effects of the PC board traces. 9 X28HC256 ABSOLUTE MAXIMUM RATINGS* Temperature under Bias X28HC256 .................................. –10°C to +85°C X28HC256I, X28HC256M ......... –65°C to +135°C Storage Temperature ....................... –65°C to +150°C Voltage on any Pin with Respect to VSS .................................. –1V to +7V D.C. Output Current ........................................... 10mA Lead Temperature (Soldering, 10 seconds)...... 300°C RECOMMENDED OPERATING CONDITIONS Temperature Commercial Industrial Military Min. 0°C –40°C –55°C Max. +70°C +85°C +125°C 3859 PGM T02.1 *COMMENT Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and the functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Supply Voltage X28HC256 Limits 5V ± 10% 3859 PGM T03.1 D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise specified.) Limits Symbol ICC Parameter VCC Active Current (TTL Inputs) VCC Standby Current (TTL Inputs) VCC Standby Current (CMOS Inputs) Input Leakage Current Output Leakage Current Input LOW Voltage Input HIGH Voltage Output LOW Voltage Output HIGH Voltage Min. Typ.(7) 30 Max. 60 Units mA Test Conditions CE = OE = VIL, WE = VIH, All I/O’s = Open, Address Inputs = .4V/2.4V Levels @ f = 10MHz CE = VIH, OE = VIL, All I/O’s = Open, Other Inputs = VIH CE = VCC – 0.3V, OE = GND, All I/Os = Open, Other Inputs = VCC – 0.3V VIN = VSS to VCC VOUT = VSS to VCC, CE = VIH ISB1 ISB2 1 200 2 500 mA µA ILI ILO VlL(2) VIH(2) VOL VOH –1 2 2.4 10 10 0.8 VCC + 1 0.4 µA µA V V V V IOL = 6mA IOH = –4mA 3859 PGM T04.2 Notes: (1) Typical values are for TA = 25°C and nominal supply voltage. (2) VIL min. and VIH max. are for reference only and are not tested. 10 X28HC256 POWER-UP TIMING Symbol tPUR(3) tPUW(3) Parameter Power-Up to Read Power-Up to Write Max. 100 5 Units µs ms 3859 PGM T05 CAPACITANCE TA = +25°C, f = 1MHz, VCC = 5V. Symbol CI/O(9) CIN(9) Test Input/Output Capacitance Input Capacitance Max. 10 6 Units pF pF Conditions VI/O = 0V VIN = 0V 3859 PGM T06.2 ENDURANCE AND DATA RETENTION Parameter Endurance Data Retention Min. 100,000 100 Max. Units Cycles Years 3859 PGM T07.3 A.C. CONDITIONS OF TEST Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels 0V to 3V 5ns 1.5V 3859 PGM T08.1 MODE SELECTION CE L L H X X OE L H X L X WE H L X X H Mode Read Write Standby and Write Inhibit Write Inhibit Write Inhibit I/O Power DOUT Active DIN Active High Z Standby — — — — 3859 PGM T09 Note: (3) This parameter is periodically sampled and not 100% tested. SYMBOL TABLE WAVEFORM INPUTS Must be steady OUTPUTS Will be steady Will change from LOW to HIGH Will change from HIGH to LOW Changing: State Not Known Center Line is High Impedance EQUIVALENT A.C. LOAD CIRCUIT 5V 1.92KΩ OUTPUT 1.37KΩ 30pF May change from LOW to HIGH May change from HIGH to LOW Don’t Care: Changes Allowed N/A 3859 FHD F20.3 11 X28HC256 A.C. CHARACTERISTICS (Over the recommended operating conditions, unless otherwise specified.) Read Cycle Limits X28HC256-70 X28HC256-90 X28HC256-12 X28HC256-15 Symbol tRC(5) tCE(5) tAA(5) tOE tLZ (4) tOLZ (4) tHZ (4) tOHZ (4) tOH Parameter Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE LOW to Active Output OE LOW to Active Output CE HIGH to High Z Output OE HIGH to High Z Output Output Hold From Address Change Min. 70 Max. 70 70 35 Min. 90 Max. 90 90 40 Min. 120 Max. 120 120 50 Min. Max. Units 150 150 150 50 0 0 ns ns ns ns ns ns ns ns ns 0 0 35 35 0 0 0 40 40 0 0 0 50 50 0 50 50 0 3859 PGM T10.2 Read Cycle tRC ADDRESS tCE CE tOE OE WE VIH tOLZ tLZ DATA I/O HIGH Z DATA VALID tAA tOH tHZ DATA VALID 3859 FHD F05 tOHZ Notes: (4) (5) tLZ min., tHZ, tOLZ min. and tOHZ are periodically sampled and not 100% tested, tHZ and tOHZ are measured, with CL = 5pF, from the point whin CE, OE return HIGH (whichever occurs first) to the time when the outputs are no longer driven. For faster 256K products, refer to X28VC256 product line. 12 X28HC256 Write Cycle Limits Symbol tWC(7) tAS tAH tCS tCH tCW tOES tOEH tWP tWPH(8) tDV tDS tDH tDW(8) tBLC Parameter Write Cycle Time Address Setup Time Address Hold Time Write Setup Time Write Hold Time CE Pulse Width OE HIGH Setup Time OE HIGH Hold Time WE Pulse Width WE HIGH Recovery (page write only) Data Valid Data Setup Data Hold Delay to Next Write after Polling is True Byte Load Cycle Min. 0 50 0 0 50 0 0 50 50 1 50 0 10 0.15 Typ.(6) 3 Max. 5 Units ms ns ns ns ns ns ns ns ns ns µs ns ns µs µs 3859 PGM T11.3 100 WE Controlled Write Cycle tWC ADDRESS tAS tCS CE tAH tCH OE tOES WE tWP tOEH DATA IN DATA VALID tDS tDH HIGH Z 3859 FHD F06 DATA OUT Notes: (6) Typical values are for TA = 25°C and nominal supply voltage. (7) tWC is the minimum cycle time to be allowed from the system perspective unless polling techniques are used. It is the maximum time the device requires to automatically complete the internal write operation. (8) tWPH and tDW are periodically sampled and not 100% tested. 13 X28HC256 CE Controlled Write Cycle tWC ADDRESS tAS CE tOES OE tCS WE tCH tOEH tAH tCW DATA IN DATA VALID tDS tDH DATA OUT HIGH Z 3859 FHD F07 Page Write Cycle OE (9) CE tWP WE tWPH (10) tBLC ADDRESS I/O BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n+1 LAST BYTE BYTE n+2 tWC 3859 FHD F08 *For each successive write within the page write operation, A7–A14 should be the same or writes to an unknown address could occur. Notes: Between successive byte writes within a page write operation, OE can be strobed LOW: e.g. this can be done with CE and WE HIGH to fetch data from another memory device within the system for the next write; or with WE HIGH and CE LOW effectively performing a polling operation. (10) The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either the CE or WE controlled write cycle timing. (9) 14 X28HC256 DATA Polling Timing Diagram(11) ADDRESS AN AN AN CE WE tOEH OE tDW I/O7 DIN=X DOUT=X tWC DOUT=X 3859 FHD F09 tOES Toggle Bit Timing Diagram(11) CE WE tOEH OE tDW I/O6 HIGH Z * tWC *I/O6 beginning and ending state will vary, depending upon actual tWC. Note: (11) Polling operations are by definition read cycles and are therefore subject to read cycle timings. 3859 FHD F10 tOES * 15 X28HC256 PACKAGING INFORMATION 28-LEAD PLASTIC DUAL IN-LINE PACKAGE TYPE P 1.460 (37.08) 1.400 (35.56) 0.550 (13.97) 0.510 (12.95) PIN 1 INDEX PIN 1 1.300 (33.02) REF. 0.085 (2.16) 0.040 (1.02) SEATING PLANE 0.150 (3.81) 0.125 (3.17) 0.160 (4.06) 0.125 (3.17) 0.030 (0.76) 0.015 (0.38) 0.110 (2.79) 0.090 (2.29) 0.062 (1.57) 0.050 (1.27) 0.020 (0.51) 0.016 (0.41) 0.610 (15.49) 0.590 (14.99) TYP. 0.010 (0.25) 0° 15° 3926 FHD F04 NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 16 X28HC256 PACKAGING INFORMATION 28-LEAD HERMETIC DUAL IN-LINE PACKAGE TYPE D 1.490 (37.85) 1.435 (36.45) 0.610 (15.49) 0.500 (12.70) PIN 1 1.30 (33.02) REF. 0.100 (2.54) 0.035 (0.89) SEATING PLANE 0.200 (5.08) 0.125 (3.18) 0.225 (5.72) 0.140 (3.56) 0.060 (1.52) 0.015 (0.38) 0.110 (2.79) 0.090 (2.29) TYP. 0.100 (2.54) 0.070 (1.78) 0.030 (0.76) TYP. 0.055 (1.40) 0.026 (0.66) 0.014 (0.36) TYP. 0.018 (0.46) 0.620 (15.75) 0.590 (14.99) TYP. 0.614 (15.60) TYP. 0.010 (0.25) 0° 15° 3926 FHD F08 NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 17 X28HC256 PACKAGING INFORMATION 32-LEAD PLASTIC LEADED CHIP CARRIER PACKAGE TYPE J 0.420 (10.67) 0.050 (1.27) TYP. 0.045 (1.14) x 45° 0.021 (0.53) 0.013 (0.33) TYP. 0.017 (0.43) 0.495 (12.57) 0.485 (12.32) TYP. 0.490 (12.45) 0.453 (11.51) 0.447 (11.35) TYP. 0.450 (11.43) 0.300 (7.62) REF. PIN 1 SEATING PLANE ±0.004 LEAD CO – PLANARITY — 0.015 (0.38) 0.095 (2.41) 0.060 (1.52) 0.140 (3.56) 0.100 (2.45) TYP. 0.136 (3.45) 0.048 (1.22) 0.042 (1.07) 0.595 (15.11) 0.585 (14.86) TYP. 0.590 (14.99) 0.553 (14.05) 0.547 (13.89) TYP. 0.550 (13.97) 0.400 (10.16)REF. 3° TYP. 3926 FHD F13 3926 Fhd F13 NOTES: 1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 2. DIMENSIONS WITH NO TOLERANCE FOR REFERENCE ONLY 18 X28HC256 PACKAGING INFORMATION 28-LEAD PLASTIC SMALL OUTLINE GULL WING PACKAGE TYPE S 0.2980 (7.5692) 0.2920 (7.4168) 0.4160 (10.5664) 0.3980 (10.1092) 0.0192 (0.4877) 0.0138 (0.3505) 0.7080 (17.9832) 0.7020 (17.8308) 0.1040 (2.6416) 0.0940 (2.3876) BASE PLANE SEATING PLANE 0.050 (1.270) BSC 0.0110 (0.2794) 0.0040 (0.1016) 0.0160 (0.4064) X 45° 0.0100 (0.2540) 0° – 8° 0.0125 (0.3175) 0.0090 (0.2311) 0.0350 (0.8890) 0.0160 (0.4064) 3926 FHD F17 NOTES: 1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 2. FORMED LEAD SHALL BE PLANAR WITH RESPECT TO ONE ANOTHER WITHIN 0.004 INCHES 3. BACK EJECTOR PIN MARKED “KOREA” 4. CONTROLLING DIMENSION: INCHES (MM) 19 X28HC256 PACKAGING INFORMATION 32-PAD CERAMIC LEADLESS CHIP CARRIER PACKAGE TYPE E 0.015 (0.38) 0.003 (0.08) 0.150 (3.81) BSC 0.020 (0.51) x 45° REF. PIN 1 0.095 (2.41) 0.075 (1.91) 0.022 (0.56) 0.006 (0.15) 0.200 (5.08) BSC 0.055 (1.39) 0.045 (1.14) TYP. (4) PLCS. 0.028 (0.71) 0.022 (0.56) (32) PLCS. 0.050 (1.27) BSC 0.040 (1.02) x 45° REF. TYP. (3) PLCS. 0.458 (11.63) 0.442 (11.22) 0.458 (11.63) –– 0.300 (7.62) BSC 0.120 (3.05) 0.060 (1.52) 0.088 (2.24) 0.050 (1.27) 0.560 (14.22) 0.540 (13.71) 0.400 (10.16) BSC 0.558 (14.17) –– 3926 FHD F14 32 1 PIN 1 INDEX CORDER 3926 Fhd F14 NOTE: 1. ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 2. TOLERANCE: ±1% NTL ±0.005 (0.127) 20 X28HC256 PACKAGING INFORMATION 28-LEAD CERAMIC PIN GRID ARRAY PACKAGE TYPE K 12 13 15 17 18 11 10 14 16 19 A 0.008 9 8 20 21 7 6 22 23 0.050 A 5 2 28 24 25 NOTE: LEADS 4,12,18 & 26 4 3 1 27 26 TYP. 0.100 ALL LEADS 0.080 0.070 PIN 1 INDEX 0.080 4 CORNERS 0.070 0.100 0.080 0.072 0.061 0.020 0.016 0.660 (16.76) 0.640 (16.26) A A 0.561 (14.25) 0.541 (13.75) 0.185 (4.70) 0.175 (4.44) NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 3926 FHD F15 21 X28HC256 PACKAGING INFORMATION 28-LEAD CERAMIC FLAT PACK 0.019 (0.48) 0.015 (0.38) 28 PIN 1 INDEX 1 0.050 (1.27) BSC 0.740 (18.80) MAX. 0.045 (1.14) MAX. 0.440 (11.18) MAX. 0.006 (0.15) 0.003 (0.08) 0.130 (3.30) 0.090 (2.29) 0.370 (9.40) 0.250 (6.35) TYP. 0.300 2 PLCS. 0.180 (4.57) MIN. 0.045 (1.14) 0.025 (0.66) 0.030 (0.76) MIN. NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 3926 FHD F16 22 X28HC256 PACKAGING INFORMATION 32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) TYPE T SEE NOTE 2 12.50 (0.492) 12.30 (0.484) PIN #1 IDENT. O 0.76 (0.03) 0.50 (0.0197) BSC SEE NOTE 2 8.02 (0.315) 7.98 (0.314) 0.26 (0.010) 0.14 (0.006) 1.18 (0.046) 1.02 (0.040) 0.17 (0.007) 0.03 (0.001) SEATING PLANE 0.58 (0.023) 0.42 (0.017) 14.15 (0.557) 13.83 (0.544) 14.80 ± 0.05 (0.583 ± 0.002) 0.30 ± 0.05 (0.012 ± 0.002) TYPICAL 32 PLACES 15 EQ. SPC. 0.50 ± 0.04 0.0197 ± 0.016 = 7.50 ± 0.06 (0.295 ± 0.0024) OVERALL TOL. NON-CUMULATIVE SOLDER PADS 0.17 (0.007) 0.03 (0.001) FOOTPRINT 1.30 ± 0.05 (0.051 ± 0.002) 0.50 ± 0.04 (0.0197 ± 0.0016) NOTE: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES IN PARENTHESES). 3926 ILL F38.1 23 X28HC256 ORDERING INFORMATION X28HC256 Device X X -X Access Time –70 = 70ns –90 = 90ns –12 = 120ns –15 = 150ns Temperature Range Blank = Commercial = 0°C to +70°C I = Industrial = –40°C to +85°C M = Military = –55°C to +125°C MB = MIL-STD-883 Package P = 28-Lead Plastic DIP D = 28-Lead Cerdip J = 32-Lead PLCC S = 28-Lead Plastic SOIC E = 32-Pad LCC K = 28-Pin Pin Grid Array F = 28-Lead Flat Pack T = 32-Lead TSOP LIMITED WARRANTY Devices sold by Xicor, Inc. are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. Xicor, Inc. makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Xicor, Inc. makes no warranty of merchantability or fitness for any purpose. Xicor, Inc. reserves the right to discontinue production and change specifications and prices at any time and without notice. Xicor, Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in a Xicor, Inc. product. No other circuits, patents, licenses are implied. U.S. PATENTS Xicor products are covered by one or more of the following U.S. Patents: 4,263,664; 4,274,012; 4,300,212; 4,314,265; 4,326,134; 4,393,481; 4,404,475; 4,450,402; 4,486,769; 4,488,060; 4,520,461; 4,533,846; 4,599,706; 4,617,652; 4,668,932; 4,752,912; 4,829, 482; 4,874, 967; 4,883, 976. Foreign patents and additional patents pending. LIFE RELATED POLICY In situations where semiconductor component failure may endanger life, system designers using this product should design the system with appropriate error detection and correction, redundancy and back-up features to prevent such an occurrence. Xicor's products are not authorized for use in critical components in life support devices or systems. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 24