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XCMECH-FF1152

XCMECH-FF1152

  • 厂商:

    XILINX(赛灵思)

  • 封装:

    -

  • 描述:

    FF1152MECHANICALSAMPLE

  • 数据手册
  • 价格&库存
XCMECH-FF1152 数据手册
Device Package User Guide UG112 (v3.7) September 5, 2012 R R Notice of Disclaimer The information disclosed to you hereunder (the “Materials”) is provided solely for the selection and use of Xilinx products. To the maximum extent permitted by applicable law: (1) Materials are made available "AS IS" and with all faults, Xilinx hereby DISCLAIMS ALL WARRANTIES AND CONDITIONS, EXPRESS, IMPLIED, OR STATUTORY, INCLUDING BUT NOT LIMITED TO WARRANTIES OF MERCHANTABILITY, NON-INFRINGEMENT, OR FITNESS FOR ANY PARTICULAR PURPOSE; and (2) Xilinx shall not be liable (whether in contract or tort, including negligence, or under any other theory of liability) for any loss or damage of any kind or nature related to, arising under, or in connection with, the Materials (including your use of the Materials), including for any direct, indirect, special, incidental, or consequential loss or damage (including loss of data, profits, goodwill, or any type of loss or damage suffered as a result of any action brought by a third party) even if such damage or loss was reasonably foreseeable or Xilinx had been advised of the possibility of the same. Xilinx assumes no obligation to correct any errors contained in the Materials or to notify you of updates to the Materials or to product specifications. You may not reproduce, modify, distribute, or publicly display the Materials without prior written consent. Certain products are subject to the terms and conditions of the Limited Warranties which can be viewed at http://www.xilinx.com/warranty.htm; IP cores may be subject to warranty and support terms contained in a license issued to you by Xilinx. Xilinx products are not designed or intended to be failsafe or for use in any application requiring fail-safe performance; you assume sole risk and liability for use of Xilinx products in Critical Applications: http://www.xilinx.com/warranty.htm#critapps. © 2004–2012 Xilinx, Inc. Xilinx, Inc. Xilinx, the Xilinx logo, Artix, ISE, Kintex, Spartan, Virtex, Vivado, Zynq, and other designated brands included herein are trademarks of Xilinx in the United States and other countries. All other trademarks are the property of their respective owners. Device Package User Guide www.xilinx.com UG112 (v3.7) September 5, 2012 Revision History The following table shows the revision history for this document. Date Version Revision 01/31/04 1.0 Initial release 02/04/05 1.1 Added Pb-free packaging information. 05/31/06 2.0 Extensive updates and new material added. 05/18/07 3.0 Updated “Material Data Declaration Sheet (MDDS)” in Chapter 1; revised link to “Xilinx Packaging Material Content Data for Standard and PB-Free Packages”. Revised “Part Marking” in Chapter 1; added “Ordering Information”, “Marking Template”, Table 1-1: “Example Part Numbers (FPGA, CPLD, and PROM)”, and Table 1-2: “Xilinx Device Marking Definition—Example”. Updated “Flip-Chip BGA Packages” in Chapter 1; added content to “Package Construction” to clarify Type I and Type II lid usage. Updated “Thermal Management & Thermal Characterization Methods & Conditions” in Chapter 3; removed “Junction-to-Board Measurement - ΨJB”, added link to new “Data Acquisition and Package Thermal Database”, added Figure 3-11, page 53, “Package Thermal Data Query for Device-Specific Data” (query tool replaces Table 3-1: “Summary of Thermal Resistance for Packages”, which was removed). Updated “Recommended PCB Design Rules for BGA, CSP, and CCGA Packages,” page 87; added missing (D) values for CP56 and CP132 packages and corrected SF363 package specification (D) value in Table 5-3, page 88. Added CS48 to Table 5-4, page 88. Updated Table 6-2, page 108 to include MSL ratings for Pb-free packages. Updated “Package Peak Reflow Temperature” in Chapter 7; correction to peak reflow temperature. Added post-wash bake details to “Post Reflow Washing” section. 12/18/08 3.1 Added link to Package Thermal Data Query Tool on xilinx.com. Updated remaining external links. Added Spartan®-3A DSP information to Table 1-1, page 13. Added these packages to Table 2-3, page 36: FG484 and FGG484. Added these packages to Table 5-3, page 88: SFG363, FF676, FGG484, FFG676, FT64 and FTG64. Removed these packages from Table 5-3, page 88: FF896, FFG896, FF1704, FFG1704, FF1696 and FFG1696. Added these packages to Table 5-4, page 88: CS484 and CSG484. UG112 (v3.7) September 5, 2012 www.xilinx.com Device Package User Guide Date Version Revision 03/17/09 3.2 Revised “Small Form Factor Packages,” page 15 to include description of third template used for marking small form factor packages. Revised “Package Construction,” page 20 to describe flip-chip package vent hole locations. Added missing Pb-free packages to Table 1-3, page 27. Revised mass of FG676 and FGG676 packages in Table 1-3, page 27. Added CS484 and CSG484 information to Table 1-3, page 27 and Table 2-3, page 36. Added FF1136 and FFG1136 tray and box information to Table 2-3, page 36. Changed link from DS529 to UG331 in third paragraph of “Data Acquisition and Package Thermal Database,” page 52. Added CS484 electrical data to Table 4-1, page 75. Added note to Table 5-3, page 88, referring to UG195. Revised humidity value in third paragraph of “Dry Bake Recommendation and Dry Bag Policy,” page 107. Revised humidity value in first and fourth paragraph of “Expiration Date,” page 107. Updated links in Table A-1, page 121. 04/23/09 3.3 Added FG400, FGG400, FF323, FFG323, FF324, FFG324, FF665, FFG665, FF676, FFG676, FF1153, FFG1153, FF1156, FFG1156, FF1738, FFG1738, FF1760, and FFG1760 to Table 2-3, page 36. Revised the via land diameters for CF1140, CF1144, and CF1509 packages in Table 5-5, page 89. 06/10/09 3.4 Revised third paragraph of “Package Construction,” page 20 about EF flip-chip package epoxy protection. Revised second paragraph of “Post Reflow Washing,” page 117 excepting EF packages from cleaning solution/solvent recommendation. 11/06/09 3.5 Added link to MDDS documents under “Material Data Declaration Sheet (MDDS),” page 10. Added FF896, EF1152, EF1704, FF1704, EF668, and EF672 to Table 5-3, page 88. Added EF957 to Table 5-4, page 88. 09/22/10 3.6 Added CS225/CSG225 and CS324/CSG324 in Table 2-3, page 36. Added CF1752 to heading in CF1509 column, and changed “Solder (ball) land pitch” to “Solder (column) land pitch” in Table 5-5, page 89. Added VO48/VOG48 in Table 6-2, page 108. 09/05/12 3.7 Updated “Thermal Management,” page 39. Updated “Characterization Methods,” page 47 and added “Calibration of System Monitor,” page 47. Removed Tt and Tl from and added TS to “Definition of Terms,” page 48. Updated “Junction-to-Case Measurement — qJC,” page 49, with JEDEC Standard JESD51-14. Updated document references in “Data Acquisition and Package Thermal Database,” page 52. Removed “Junction-to-Top Measurement — ΨJT” and “Support for Compact Thermal Models (CTM).” Updated note for TA in “Thermal Data Usage Examples,” page 54. Updated “Additional Power Management Options,” page 57. Device Package User Guide www.xilinx.com UG112 (v3.7) September 5, 2012 Table of Contents Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Chapter 1: Package Information Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Introduction to Xilinx Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging Technology at Xilinx. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Material Data Declaration Sheet (MDDS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Samples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Specifications and Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Inches vs. Millimeters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pressure Handling Capacity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clockwise or Counterclockwise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cavity-Up or Cavity-Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 12 12 Part Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Marking Template . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Package Technology Descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Pb-Free Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cavity-Up Plastic BGA Packages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cavity-Down Thermally Enhanced BGA Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . Flip-Chip BGA Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Assembling Flip-Chip BGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Chip Scale Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Quad Flat No-Lead (QFN) Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ceramic Column Grid Array (CCGA) Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermally Enhanced Lead Frame Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 17 18 19 21 22 23 24 25 Package Mass Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Chapter 2: Pack and Ship Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cover Tape . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bar Code Label . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Shipping Box . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Standard Bar Code Label Locations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 32 32 32 32 34 Tubes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Trays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 5 R Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Thermal Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Xilinx Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Heatsinks, Heatsink Interface Materials, and Heatsink Attachments . . . . . . . . . . . . . Power Estimation Tools . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Compact Thermal Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PCB Design: Layer, Board, and Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . Ambient temperature, Enclosures, and Airflow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Humidity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Altitude . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Data Comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 40 40 41 42 43 43 44 44 Package Thermal Characterization Methods and Conditions . . . . . . . . . . . . . . . . . 47 Characterization Methods . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Calibration of Isolated Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Calibration of System Monitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Simulation Methods. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Measurement Standards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Definition of Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction-to-Reference General Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction-to-Case Measurement — qJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Junction-to-Ambient Measurement — qJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance: Junction-to-Board — qJB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data Acquisition and Package Thermal Database . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47 47 47 47 48 48 49 49 51 52 52 Application of Thermal Resistance Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 Thermal Data Usage Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 Example 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Example 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 Heatsink Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56 Additional Power Management Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57 System Simulation Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 Chapter 4: Package Electrical Characteristics Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Terminology - Definitions and Reviews . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63 Resistance (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductance (L) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Capacitance (C). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Conductance (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Impedance (Z). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Time Delay (Td) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Crosstalk . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ground Bounce . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Signal Integrity and Package Performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64 65 67 69 69 69 70 71 71 Electrical Data Generation and Measurement Methods . . . . . . . . . . . . . . . . . . . . . . 72 Review of Practical Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 Package Sample and Fixture Preparation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72 6 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Software-Based Simulations and Extractions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Electrical Data Delivery Formats . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Data Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Models at Xilinx - Electrical Data Delivery via Models . . . . . . . . . . . . . . . . . . . . . . . . . Further Explanations on Model Data and Terminology . . . . . . . . . . . . . . . . . . . . . . . . 73 74 75 79 81 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83 Chapter 5: Recommended PCB Design Rules Recommended PCB Design Rules for QFP Packages . . . . . . . . . . . . . . . . . . . . . . . . . Recommended PCB Design Rules for TSOP/TSSOP Packages . . . . . . . . . . . . . . . Recommended PCB Design Rules for BGA, CSP, and CCGA Packages . . . . . . . Board Routability Guidelines with Xilinx Fine-Pitch BGA Packages . . . . . . . . . 85 86 87 89 Board Level Routing Challenges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Board Routing Strategy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 Board Routing Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92 Recommended PCB Design Rules for QFN Packages . . . . . . . . . . . . . . . . . . . . . . . . 98 PCB Pad Pattern Design and Surface-Mount Considerations for QFN Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98 PCB Pad Patterns . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99 Thermal Pad and Via Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Solder Masking Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 Stencil Design for Perimeter Pads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 Stencil Design for Thermal Pad . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101 Via Types and Solder Voiding . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102 Stencil Thickness and Solder Paste . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 Chapter 6: Moisture Sensitivity of PSMCs Moisture-Induced Cracking During Solder Reflow . . . . . . . . . . . . . . . . . . . . . . . . . Factory Floor Life . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Dry Bake Recommendation and Dry Bag Policy . . . . . . . . . . . . . . . . . . . . . . . . . . . . Handling Parts in Sealed Bags . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inspection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Expiration Date . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Other Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 106 107 107 107 107 107 108 Assigned Package MSL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 Chapter 7: Reflow Soldering Process Guidelines Solder Reflow Process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111 Package Peak Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 Soldering Problems Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 Typical Conditions for IR Reflow Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113 Implementing and Optimizing Solder Reflow Process for BGA Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 Reflow Ovens . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114 Reflow Process . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 Methods of Measuring Profiles . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 7 R Reflow Profiling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Post Reflow Washing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reworking Flip-Chip BGAs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BGA Reballing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Conformal Coating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Post Assembly Handling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Heat Sink Removal Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Pressure Handling Capacity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 117 117 119 119 119 119 119 120 QFN Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Appendix A: Additional Information Table of Socket Manufacturers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Web Sites for Heatsink Sources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Web Sites for Interface Material Sources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Related Xilinx Web Sites and Links to Xilinx Packaging Application Notes . 8 www.xilinx.com 121 122 123 123 Device Package User Guide UG112 (v3.7) September 5, 2012 R Chapter 1 Package Information Package Overview Introduction to Xilinx Packaging Electronic packages are interconnectable housings for semiconductor devices. The major functions of the electronic packages are to provide electrical interconnections between the IC and the board and to efficiently remove heat generated by the device. Feature sizes are constantly shrinking, resulting in increased number of transistors being packed into the device. Today's submicron technology is also enabling large-scale functional integration and system-on-a-chip solutions. In order to keep pace with these new advancements in silicon technologies, semiconductor packages have also evolved to provide improved device functionality and performance. Feature size at the device level is driving package feature sizes down to the design rules of the early transistors. To meet these demands, electronic packages must be flexible to address high pin counts, reduced pitch and form factor requirements. At the same time, packages must be reliable and cost effective. Packaging Technology at Xilinx Xilinx provides a wide range of leaded and array packaging solutions for our advanced silicon products. Xilinx® advanced packaging solutions include overmolded plastic ball grid arrays (PBGA), small form factor Chip Scale Packages, “Cavity-Down” BGAs, flip-chip BGAs, flip-chip ceramic column grid arrays (CCGA), as well as the newer lead frame packages such as Quad Flat No-Lead (QFN) packages to meet various pin counts and density requirements. Packages from Xilinx are designed, optimized, and characterized to support the long-term mechanical reliability requirements as well as to support the cutting-edge electrical and thermal performance requirements for our highspeed advanced FPGA products. Pb-free Packaging Solutions from Xilinx Xilinx also develops packaging solutions that are safer for the environment. Today, standard packages from Xilinx do not contain substances that are identified as harmful to the environment including cadmium, hexavalent chromium, mercury, PBB, and PBDE. Pbfree solutions take that one step further and also do not contain lead (Pb). This makes Pbfree solutions from Xilinx RoHS (Reduction of Hazardous Substances) compliant. Pb-free packages from Xilinx are also JEDEC J-STD-020 compliant, meaning that the packages are made to be more robust so they are capable of withstanding higher reflow temperatures. Xilinx is now ready to support the industry requirements for Pb-free packaging solutions. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 9 R Chapter 1: Package Information Package Drawings Package drawings are mechanical specifications that include exact dimensions for the placement of pins, height of the package, and related information. Package drawings are available online at http://www.xilinx.com/support/documentation/package_specifications.htm. Material Data Declaration Sheet (MDDS) The MDDS template used by Xilinx is based on the Electronic Industries Alliance (EIA) September 19, Material Composition Declaration Guide dated September 19, 2003 for Level A and Level B materials of interest. As per EIA, “Level A” List is composed of materials and substances subject to currently enacted legislation that: a. Prohibits their use and/or marketing b. Restricts their use and/or marketing c. Requires reporting or results in other regulatory effect. As per EIA, “Level B” List is composed of materials and substances that the industry has determined relevant for disclosure because they meet one or more of the following criteria: a. Precious materials/substances that provide economic value for end-of-life management purposes b. Materials/substances that are of significant environmental, health, or safety interest c. Materials/substances that would trigger hazardous waste management requirements d. Materials/substances that could have a negative impact on end-of-life management. See the EIA standard for more specific information. MDDS documents are available online at http://www.xilinx.com/support/documentation/package_specifications.htm. Information about Pb-Free and RoHS-compliant products is available at http://www.xilinx.com/system_resources/lead_free. Package Samples Xilinx offers two types of non-product-specific package samples that can help develop custom processes and perform board-level tests. These samples can be ordered with ordering codes as detailed below. Mechanical Samples XCMECH-XXXXX (where XXXXX is the package code of interest) This part type is used for mechanical evaluations, process setup, etc. Most packages are based on the JEDEC outline, and these parts are at times referred to as "dummy" parts since mechanical samples do not contain a die. Example: To order a FG676 package as a mechanical sample (without the die), the part number would be XCMECH-FG676. 10 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Specifications and Definitions Daisy Chain Samples XCDAISY-XXXXX (where XXXXX is the package code of interest) Use this part type to perform board-based evaluations (such as vibrations and temperature cycles) to see how well the solder balls withstand these mechanical conditions. For Xilinx daisy chain parts (XCDAISY-XXXXX), a specific ball assignment chain is available. If you do not have a board already made, you can use our default chain. You can purchase these parts from Xilinx through standard sales outlets. Xilinx does not support unique chains because these parts do not have the volume to justify the development effort. Example: To order a FG676 package in a daisy-chained configuration, the part number would be XCDAISY-FG676. Specifications and Definitions Inches vs. Millimeters The JEDEC standards for PLCC, CQFP, and PGA packages define package dimensions in inches. The lead spacing is specified as 25 mils, 50 mils, or 100 mils (0.025 in., 0.050 in. or 0.100 in.). The JEDEC standards for PQFP, HQFP, TQFP, VQFP, CSP, and BGA packages define package dimensions in millimeters. The lead frame packages have lead spacings of 0.5 mm, 0.65 mm, or 0.8 mm. The CSP and BGA packages have ball pitches of 0.5 mm, 0.8 mm, 1.00 mm, or 1.27 mm. Because of the potential for measurement discrepancies, this Data Book provides measurements in the controlling standard only, either inches or millimeters. Pressure Handling Capacity For mounted BGA packages, including flip chips, a direct compressive (non-varying) force applied normally to the lid or top of package with a tool head that coincides with the lid (or is slightly bigger) will not induce mechanical damage to the device including external balls, provided the force is not over 5.0 grams per external ball, and the device and board are supported to prevent any flexing or bowing. These components are tested in sockets with loads in the 5 to 10 gm/ball range for short durations. Analysis using a 10g/ball (e.g., 10 kg for FF1148) showed little impact on shortterm but some creep over time. 20 gm/ball and 45 gm/ball loads at 85°C over a six week period has shown the beginning of bridging of some outer balls; these were static load tests. The component can survive forces greater than the 5 gm limit while in short-term situations. However, sustained higher loads should be avoided (particularly if they are overlaid with thermal or power cycle loads). Within the recommended limits, circuit board needs to be properly supported to prevent any flexing resulting from force application. Any flexing or bowing resulting from such a force can likely damage the package-to-board connections. Besides the damage that can occur from bending, the only major concern is long-term creep and bulging of the solder balls in compression to cause bridging. For the life of a part, staying below the recommended limit will ensure against that remote possibility. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 11 R Chapter 1: Package Information Clockwise or Counterclockwise The orientation of the die in the package and the orientation of the package on the PC board affect the PC board layout. PLCC and PQFP packages specify pins in a counterclockwise direction, when viewed from the top of the package (the surface with the Xilinx logo). PLCCs have pin 1 in the center of the beveled edge while all other packages have pin 1 in one corner, with one exception: The 100-pin and 165-pin CQFPs (CB100 and CB164) for the XC3000 devices have pin 1 in the center of one edge. CQFP packages specify pins in a clockwise direction, when viewed from the top of the package. The user can make the pins run counterclockwise by forming the leads such that the logo mounts against the PC board. However, heat flow to the surrounding air is impaired if the logo is mounted down. Cavity-Up or Cavity-Down Most Xilinx devices attach the die against the inside bottom of the package (the side that does not carry the Xilinx logo). Called “Cavity-Up,” this has been the standard IC assembly method for over 25 years. This method does not provide the best thermal characteristics. Pin Grid Arrays (greater than 130 pins), copper based BGA packages, and Ceramic Quad Flat Packs are assembled “Cavity-Down,” with the die attached to the inside top of the package, for optimal heat transfer to the ambient air. More information on “Cavity-Up” packages and “Cavity-Down” packages can be found in the “Package Technology Descriptions” section. For most packages this information does not affect how the package is used because the user has no choice in how the package is mounted on a board. For Ceramic Quad Flat Pack (CQFP) packages however, the leads can be formed to either side. Therefore, for best heat transfer to the surrounding air, CQFP packages should be mounted with the logo up, facing away from the PC board. Part Marking Ordering Information An example of an ordering code for a Xilinx FPGA is XC4VLX60-10FFG668CS2. The ordering code stands for: XC4VLX – Family (Virtex®-4 LX) 60 – Number of system gates or logic cells (60,000 logic cells) -10 – Speed grade (-10 speed) FFG – Package type (Pb-free flip-chip BGA) 668 – number of pins (668 pins) C – Temperature grade (Commercial) S2 – Step 2 12 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Part Marking Other examples are shown in Table 1-1. Table 1-1: Example Part Numbers (FPGA, CPLD, and PROM) Family Part Number Sample Ordering Code Virtex-5 LX XC5VLX## XC5VLX110 -1 FFG676C Virtex-5 LXT XC5VLX##T XC5VLX330T-1FF1738I Virtex-5 SXT XC5VSX##T XC5VSX35T-2FF665C Virtex-4 LX XC4VLX## XC4VLX25 -10 FF668C Virtex-4 SX XC4VSX## XC4VSX55 -11 FF1148C Virtex-II Pro XC2VP## XC2VP7 -7 FG456C Virtex-II XC2V## XC2V1000 -5 FG456C Virtex-E XCV##E XCV300E -6 PQ240C Virtex XCV## XCV300 -6 PQ240C Spartan®-3 XC3S## XC3S1000 -4 FG676C Spartan-3A XC3S##A XC3S50A -4 FTG256C Spartan-3E XC3S##E XC3S250E -4 FT256C Spartan-II XC2S## XC2S50 -6 PQ208C Spartan-IIE XC2S##E XC2S50E -6 PQ208C Spartan-3AN XC3Sx###AN XC3S400AN-4FG400I Spartan-3A DSP XC3SD####A XC3SD1800A-4CS484LI Spartan XCS## XCS20 -4 PQ208C Spartan-XL XCS##XL XCS20XL -4 PQ208C 4000E XC4##E XC4013E -3 HQ240C 4000XL XC4##XL XC4013XL -3 PQ208C CoolRunner™-II XC2C## XC2C256 -7 PQ208C CoolRunner (XPLA3) XCR##XL XCR3512XL -7 PQ208C 9500XV XC95##XV XC9536XV -7 VQ44I 9500XL XC95##XL XC9572XL -7 TQ100C 9500 XC95## XC95216 -10 HQ208C Notes: 1. Automotive parts use “XA” instead of “XC”. 2. QML-certified parts use “XQ” instead of “XC”. 3. Aerospace parts have an “R” after “XQ” instead of “XC”. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 13 R Chapter 1: Package Information Examples CPLD Ordering Information An example of an ordering number for a Xilinx CPLD is XC2C256-7PQ108I, and is defined as follows: XC2C – Family (CoolRunner-II) 256 – Number of macrocells (256 macrocells) -7 – Speed grade (-7 speed) PQ – Package type (Plastic Quad Flat Pack) 208 – Number of pins (208 pins) I – Temperature grade (Industrial) PROM Ordering Information An example of an ordering number for a Xilinx PROM is XC18V04VQ44C, and is defined as follows: XC18V – Family - 1800 (ISP) PROM 04 – PROM size (18V00, 17V00, 1700E/L) or equivalent Spartan-II or Spartan-IIE device (17S00A/XL/L), 4 Mb of storage capacity VQ – Package type (Plastic Quad Flat Pack) 44 – Number of pins (44 pins) C – Temperature grade (commercial) To determine the valid ordering combinations for a given device, consult the device data sheet. Data sheets are available at http://www.xilinx.com/support/documentation/index.htm Marking Template Large Form Factor Packages On December 26, 1995, Product Change Notice (PCN) 95013 was issued to acknowledge a change to the Xilinx standard for package marking. You can view this notice at http://www.xilinx.com/support/documentation/customer_notices/pcn95013.pdf Xilinx part marking follows generalized marking templates that are different for small and large packages. Within each group, some minor variations exist due to device family branding. The large package template (Figure 1-1) consists of the Xilinx Logo, the family brand logo, and 4 lines of information. 14 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Part Marking X-Ref Target - Figure 1-1 R R Device Type Package Speed Grade XC5VLX50T TM FFG1136xxxXXXX DxxxxxxxA 1C - ES Date Code Lot Code Engineering Sample Operating Range UG112_C1_01_040709 Figure 1-1: Table 1-2: Top Marking (for Large Device Packages) Xilinx Device Marking Definition—Example Item Description Corporate Logo Xilinx logo, Xilinx name with trademark, and trademark-registered status. Family Brand Logo Product family name with trademark and trademark-registered status. This line is optional and could appear blank. 1st Line Device type. Package type and pin count, circuit design revision, the location code for the wafer fab, the geometry code, and date code. 2nd Line 3rd Line A G in the third letter of a package type indicates a Pb-free RoHS compliant package. For more details on Xilinx Pb-Free and RoHS Compliant Products, see: http://www.xilinx.com/system_resources/lead_free/index.htm. Ten alphanumeric characters for assembly, lot, and step information. The last digit is usually an A or an M if a stepping version does not exist. Device speed grade and temperature range. If a grade is not marked on the package, the product is considered commercial grade. Other variations for the 4th line: 4th Line 1C-xxxx The xxxx indicates the SCD for the device. An SCD is a special ordering code that is not always marked in the device top mark. 1C-ES The ES indicates an Engineering Sample. Small Form Factor Packages A second template is used on smaller packages that do not have enough room for six lines of marking. This marking is used mainly for PROMs, and can be found on some mediumsize packages as well. Line 1 Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 15 R Chapter 1: Package Information Product name code, eight characters. Five or six characters (for example, 1765D) designate the product name representation (usually the name without the “XC”). The name is followed by the PROM package designator (usually a single character). The last letter represents the temperature range (for example, M, I, C). Line 2 Six numeric characters preceded by the “X” of the Xilinx logo. The first numeric character after the “X” designates the last digit of the year in which the product was assembled. This digit will be the same every 10 years. The next two numeric characters identify the assembly work week. The last three characters are the final three digits of the Assembly number for the lot. Line 3 This line is usually left blank for customer PROM designator marking. A third template is used for CPLD and Spartan FPGA small form factor packages. Information is provided on four lines. Line 1 Product name code (without XC). For example, 9536XL or 3S250E preceded by the "X" of the Xilinx logo. Line 2 Consists of 11 alphanumeric characters. The first character is a letter that represents the manufacturing location. The next five numeric characters are the lot number. The last four numeric characters are the four digit date code in YYWW format. Line 3 Indicates the country of origin. Line 4 Consists of about seven alphanumeric characters. The first two characters are the CPLD or Spartan FPGA package designator and are followed by a three letter mask code. The last two characters are the speed and temperature range. Package Technology Descriptions Pb-Free Packaging Recent legislative directives and corporate driven initiatives around the world have called for the elimination of Pb and other hazardous substances in electronics used in many sectors of the electronics industry. The Pb-free program at Xilinx was established in 1999 as a proactive effort to develop and qualify suitable material sets and processes for Pb-free applications. Xilinx has taken the leadership position by quickly forming partnerships with our customers, suppliers, and participating in industry consortiums to provide technical solutions that are aligned with industry requirements. Pb-free Material Set Xilinx has researched alternatives for Pb compounds and has selected matte Sn lead finish for lead-frame packages and SnAgCu solder balls for BGA packages. In addition, suitable material sets are chosen and qualified for higher reflow temperatures (245oC – 260oC) that are required by Pb-free soldering processes. Pb-free products from Xilinx are designated 16 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Technology Descriptions with an additional “G” in the package designator portion of the part number. For example, FGG1152 is the Pb-free version of FG1152. Features • RoHS compliant • Compliant to JEDEC-J-STD-020 standard for peak reflow temperature (245oC – 260oC) • Packages marked with Pb-free identifier Backward Compatibility Backward compatibility, as described in this chapter, refers only to the soldering process. Pb-free devices from Xilinx have the same form, fit and function as standard Pb-based products. No changes are required for board design when using Pb-free products from Xilinx. However, finish materials for boards might need to be adjusted. Lead frame packages (PQG, TQG, VQG, PCG, QFG, etc.) from Xilinx are backward compatible, meaning that the component can be soldered with Sn/Pb solder using Sn/Pb soldering process. Lead-frame packages from Xilinx use a matte Sn plating on the leads which is compatible with both Pb-free soldering alloys and Sn/Pb soldering alloy. BGA packages (CPG, FTG, FGG, BGG, etc.), however, are not recommended to be soldered with SnPb solder using a Sn/Pb soldering process. The traditional Sn/Pb soldering process usually has a peak reflow temperature of 205oC - 220oC. At this temperature range, the SnAgCu BGA solder balls do not properly melt and wet to the soldering surfaces. As a result, reliability and assembly yields might be compromised. For more information on Xilinx Pb-free solutions, refer to http://www.xilinx.com/system_resources/lead_free/index.htm, and for more information on the Pb-free reflow process, refer to XAPP427. Tin Whisker Mitigation Following are some of the efforts Xilinx is making to mitigate tin whiskering in Pb-free lead-frame packages (non-BGA): a. b. c. Tin whisker growth mitigation practices are: - Annealing matte tin for 1 hour @ 150°C within 8 hours after tin plating - Minimum thicker plating thickness 400 micro inches (10 micro meter) Xilinx assembly subcontractors comply with JEDEC standards for tin whisker test conditions outlined by: - JESD22A121.01 (May 2005) - JESD201 (March 2006) The lead finish method for Xilinx Pb-Free lead-frame product is: - 100% matte tin plating over a bare Cu lead frame Cavity-Up Plastic BGA Packages BGA is a plastic package technology that utilizes area array solder balls at the bottom of the package to make electrical contact with the system circuit board. The area array format of solder balls reduces package size considerably when compared to leaded products. It also results in improved electrical performance as well as having higher manufacturing yields. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 17 R Chapter 1: Package Information The substrate is made of a mutilayer BT (bismaleimide triazene) epoxy-based material. Power and ground pins are grouped together and the signal pins are assigned in the perimeter format for ease of routing on to the board. The package is offered in a die up format and contains a wirebonded device that is covered with a mold compound. Package Construction X-Ref Target - Figure 1-2 Plastic Mold Plated Copper Conductor Soldermask Thermal Vias BT (PCB Laminate) Solder Ball UG112_c1_02_111508 Figure 1-2: Cavity-Up Ball Grid Array Package As shown in the cross section of Figure 1-2, the BGA package contains a wire bonded die on a single-core printed circuit board with an overmold. Beneath the die are the thermal vias which can dissipate the heat through a portion of the solder ball array and ultimately into the power and ground planes of the system circuit board. This thermal management technique provides better thermal dissipation than a standard PQFP package. Metal planes also distribute the heat across the entire package, enabling a 15–20% decrease in thermal resistance to the case. Key Features/Advantages of Xilinx Cavity-Up BGA Packages • High board assembly yield since board attachment process is self-centering • SMT compatible, resulting in minimum capital investment • Extendable to multichip modules • Low profile and small footprint • Improved electrical performance (short wire length) • Enhanced thermal performance • Excellent board level reliability Cavity-Down Thermally Enhanced BGA Packages Copper-based cavity-down BGAs are high-performance, low-profile packages that offer superior electrical and thermal characteristics. This technology is especially applicable for high-speed, high-power semiconductors such as the Virtex device family. Package Construction Figure 1-3 depicts the cross-section of the cavity-down BGA package. It should be noted that this is a solid construction without any internal cavity. The backside die is attached directly to the copper heat spreader and conducts heat out of the package through an epoxy die attach adhesive. The larger the die size and the package body size, the better the thermal performance. The incorporation of the copper heat spreader also results in thermal resistance values that are lowest among the packages offered by Xilinx. 18 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Technology Descriptions Attached to the heatspreader is a copper stiffener with cavity out to accommodate the die. Along with the heatspreader, this stiffener provides the mechanical flexural strength and warpage control for the package. On the exposed surface of the stiffener is a laminate or build-up structure that contains the circuit traces, the power and ground planes if any, and the sites for the connecting solder balls. The laminate is made of either a glass-reinforced high-glass transition temperature (Tg) bismaleimide triazine (BT) or build-up structure. Xilinx uses laminate with up to four layers, including PWR and GND planes. Key Features/Advantages of Xilinx Cavity-Down BGAs • Lowest thermal resistance (θJA < 13°C/W) • Superior electrical performance • Low profile and light weight construction • Excellent board-level reliability X-Ref Target - Figure 1-3 Cu Heatspreader Die Attach Adhesive Cu Ring Substrate Gold Wire Solder Ball Encapsulant UG112_c1_03_111508 Figure 1-3: Cavity-Down BGA Package Flip-Chip BGA Packages Flip chip is a packaging interconnect technology that replaces peripheral bond pads of traditional wirebond interconnect technology with area array interconnect technology at the die/substrate interface. The bond pads are either redistributed on the surface of the die or in some very limited cases, they are directly dropped from the core of the die to the surface. Because of this inherent distribution of bond pads on the surface of the device, more bond pads and I/Os can be packed into the device. X-Ref Target - Figure 1-4 UG112_c1_04_111508 Figure 1-4: Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com Eutectic Bumps 19 R Chapter 1: Package Information The Xilinx flip-chip BGA package is offered for Xilinx high-performance FPGA products. Unlike traditional packaging in which the die is attached to the substrate face up and the connection is made by using wire, the solder bumped die in flip-chip BGA is flipped over and placed face down, with the conductive bumps connecting directly to the matching metal pads on the laminate substrate. Unlike traditional packaging technology in which the interconnection between the die and the substrate is made possible using wire, flip chip utilizes conductive bumps that are placed directly on the area array pads of the die surface. The area array pads contain wettable metallization for solders (either eutectic or high lead) where a controlled amount of solder is deposited either by plating or screen-printing. These parts are then reflowed to yield bumped dies with relatively uniform solder bumps over the surface of the device. The device is then flipped over and reflowed on a ceramic or organic laminate substrate. The solder material at molten stage is self-aligning and produces good joints even if the chips are placed offset to the substrates. After the die is soldered to the substrate, the gap (standoff) formed between the chip and the substrate is filled with an organic compound called underfill. The underfill is a type of epoxy that helps distribute stresses from these solder joints to the surface of the whole die and hence improve the reliability and fatigue performance of these solder joints. This interconnect technology has emerged in applications related to high performance communications, networking and computer applications as well as in consumer applications where miniaturization, high I/O count, and good thermal performance are key attributes. Package Construction Flip-chip BGA packages for high-performance applications are built on high-density multi-layer organic laminate substrates. Because the flip-chip bump pads are in area array configuration, it requires very fine lines and geometry on the substrates to be able to successfully route the signals from the die to the periphery of the substrates. Multilayer build-up structures offer this layout flexibility on flip-chip packages. Figure 1-5 and Figure 1-6 show cross-section views of the package constructions. Note that two types of lids are used to assemble flip-chip BGA packages; type I lids (as shown in with flat top) and type II lids (as shown in Figure 1-6 with hat-type top), depending on the package type. Use the package drawing specification (to determine the lid type used on the specific packages, see http://www.xilinx.com/support/documentation/package_specifications.htm. X-Ref Target - Figure 1-5 Underfill Epoxy Flip Chip Solder Bump Adhesive Epoxy Thermal Interface Material Copper Heatspreader Silicon Die Solder Ball Organic Build-up Substrate UG112_c1_05_052709 Figure 1-5: 20 Flip-Chip BGA Package with Type I Lid www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Technology Descriptions X-Ref Target - Figure 1-6 Copper Heatspreader Flip Chip Solder Bump Adhesive Epoxy Thermal Interface Underfill Material Epoxy Silicon Die Solder Ball Organic Build-up Substrate UG112_c1_06_111508 Figure 1-6: Flip-Chip BGA Package with Type II Lid Xilinx flip-chip packages are not hermetically sealed, and exposure to cleaning solvents or excessive moisture during board assembly can pose serious package reliability concerns. Small vents are placed by design between the heatspreader (lid) and the organic substrate to allow for outgassing and moisture evaporation. These vent holes are located in the middle of all four sides of FF flip-chip packages. Solvents or other corrosive chemicals can seep through these vents and attack the organic materials and components inside the package and are strongly discouraged during board assembly of Xilinx flip-chip BGA packages. The only exception would be for EF flip-chip packages in which special epoxy protection is applied to protect against solvents. Key Features/Advantages of Flip-Chip BGA Packages • Easy access to core power/ground, resulting in better electrical performance • Excellent thermal performance (direct heatsinking to backside of the die) • Higher I/O density since bond pads are in area array format • Higher frequency switching with better noise control Assembling Flip-Chip BGAs The Xilinx flip-chip BGAs conform to JEDEC body sizes and footprint standards. These packages follow the EIA moisture level classification for plastic surface mount components (PSMC). Standard surface mount assembly process should be used with consideration for the slightly higher thermal mass for these packages. Like other SMT components, flip-chip BGA assembly involves the following process: screen printing, solder reflow, post reflow washing. The following will serve as a guideline on how to assemble flip-chip BGAs onto PCBs. Screen Printing Machine Parameters Below is an example of the parameters that were used for the screen printing process. Note that these might not be optimized parameters. Optimized parameters will depend on user's applications and setup. • Equipment: MPM Ultraprint 2000 • Squeegee Type: Metal • Squeegee Angle: 45° Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 21 R Chapter 1: Package Information • Squeegee Pressure: 24 lbs/sq. in. • Squeegee Speed: 0.7 in/second • Print Cycle: One pass • Stencil Snap Off: 0.10 inches • Stencil Lift Off Speed: Slow Screen Printing Process Parameters • Solder paste: Alpha Metals WS609 (water soluble) • Stencil aperture: 0.0177 inches diameter • Stencil thickness: 0.006 inches • Aperture creation: Laser cut It is highly recommended to use either a no-clean solder paste or a water soluble solder paste. If cleaning is required, then a water soluble solder paste should be used. Chip Scale Packages Chip Scale Packages have emerged as a dominant packaging option for meeting the demands of miniaturization while offering improved performance. Applications for Chip Scale Packages are targeted to portable and consumer products where real estate is of utmost importance, miniaturization is key, and power consumption/dissipation must be low. A Chip Scale Package is defined as a package that fits the definition of being between 1 to 1.2 times the area of the die that the package contains while having a pitch of less than 1 mm. By employing CSP packages, system designers can dramatically reduce board real estate and increase the I/O counts. Package Construction Although there are currently more than 50 different types of CSPs available in the market, Xilinx CSP packages fall into two categories, as shown in Figure 1-7: flex-based substrates and rigid BT-based substrates. Although, both types meet the reliability requirement at the component and board level, BT-based substrate was chosen for the newer devices because of the large vendor base producing/supporting the BT-based substrates. Key Features/Advantages of CSP Packages 22 • An extremely small form factor which significantly reduces board real estate for such applications as PCMCIA cards, portable and wireless designs, and PC add-in cards • Lower inductance and lower capacitance • The absence of thin, fragile leads found on other packages • A very thin, light-weight package www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Technology Descriptions X-Ref Target - Figure 1-7 Die Attach Molding Compond Die Attach Molding Compond IC BT Resin Solder Ball Solder Mask Plated Via Polyimide Tape Copper Plating UG112_c1_07_112508 Figure 1-7: Rigid BT-Based Substrate Chip Scale Packages, Left; Flex-Based Tape Substrate, Right Quad Flat No-Lead (QFN) Packages Quad Flat No-Lead (QFN) or MLF package is a robust and low-profile lead frame-based plastic package that has several advantages over traditional lead frame packages. The exposed die-attach paddle enables efficient thermal dissipation when directly soldered to the PCB. Additionally, this near chip scale package offers improved electrical performance, smaller package size, and an absence of external leads. Since the package has no external leads, coplanarity and bent leads are no longer a concern. Xilinx Quad Flat No-Lead packages are ideal for portable applications where size, weight, and performance matter. Package Construction The QFN is a molded leadless package with land pads on the bottom of the package. Electrical contact to the PCB is made by soldering the land pads to the PCB. The backside of the die is attached to the exposed paddle through the die attach material which is electrically conductive. The exposed pad therefore represents a weak ground and should be left floating or connected to a ground net. X-Ref Target - Figure 1-8 Gold Wire Mold Compound Die Attach Epoxy Silicon Die Copper Leadframe Down Bond Exposed Die Paddle Ground Bond UG112_c1_08_112508 Figure 1-8: Device Package User Guide UG112 (v3.7) September 5, 2012 QFN Cross Section (Left) and Bottom View (Right) www.xilinx.com 23 R Chapter 1: Package Information Key Features/Advantages of QFN Packages • Small size and light weight • Excellent thermal and electrical performance • Compatible with conventional SMT processes Ceramic Column Grid Array (CCGA) Packages Ceramic Column Grid Array (CCGA) packages are surface-mount-compatible packages that use high-temperature solder columns as interconnections to the board. Compared to the solder spheres, the columns have lower stiffness and provide a higher stand-off. These features significantly increase the reliability of the solder joints. When combined with a high-density, multilayer ceramic substrate, this packaging technology offers a high density, reliable packaging solution. Ceramic offers the following benefits: Key Features/Advantages of CCGA Packages • High planarity and excellent thermal stability at high temperature • CTE matches well with the silicon die • Low moisture absorption Xilinx offers 3 different formats of CCGA: “Cavity-Down” wire-bonded CCGA, “CavityUp” wire-bonded CCGA, and flip-chip CCGA. Cavity-Down Wire-Bonded CCGA – CG560 Package Construction CG560 is offered with the Xilinx XQV1000 and XQVR1000 devices. It is pin-compatible with the plastic BG560 package. Below are additional attributes of CG560. • Interconnect: 90Pb/10Sn hard solder column interposer, attached with 63Sn/37Pb soft solder. • Hermetically sealed with eutectic Sn/Au - X-Ref Target - Figure 1-9 Copper/Tungsten Heatsink Solder Column Kovar (Plated with Au) Lid Ceramic Substrate UG112_c1_09_111608 Figure 1-9: CG560 Package Cavity-Up Wire-Bonded BGA – CG717 Package Construction CG717 is offered with the Xilinx XQ2V3000 and XQR2V3000 devices. It is pin-compatible with the plastic BG728 package. Below are additional attributes of CG717. • 24 Interconnect: 80Pb/20Sn hard solder column, attached with 63Sn/37Pb soft solder. www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Technology Descriptions • Hermetically sealed with eutectic Sn/Au X-Ref Target - Figure 1-10 Kovar (Plated with Au) Lid Solder Column Ceramic Substrate UG112_c1_10_111608 Figure 1-10: CG717 Package Flip-Chip CCGA – CF1144 Package Construction Flip-Chip CCGA is targeted for applications that require high performance, density, and high reliability. CF1144 is offered with the Xilinx XQ2V6000 and XQR2V6000 devices. The CF1144 package is pin-compatible with the plastic flip-chip FF1152 package. Below are additional attributes of CF1144: • 95Pb/5Sn flip-chip solder bumps • 90Pb/10Sn hard solder column X-Ref Target - Figure 1-11 Underfill Epoxy Flip-chip Solder Bump Thermal Adhesive Aluminum Heatspreader Silicon Die Solder Column Ceramic Multi-layer Substrate UG112_c1_11_120908 Figure 1-11: CF1144 Package Thermally Enhanced Lead Frame Packaging Xilinx offers thermally enhanced quad flat pack packages on XC4000 Series devices and some earlier Virtex devices. This section discusses the performance and usage of these packages (designated HQ). Key Features/Advantages of Thermally Enhanced Lead Frame Packages • The HQ-series and the regular PQ packages conform to the same JEDEC drawings. • The HQ and PQ packages use the same PCB land patterns. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 25 R Chapter 1: Package Information • The HQ packages have more mass • Thermal performance is better for the HQ packages Applications of HQ Packages • HQ packages are offered as the thermally enhanced equivalents of PQ packages. They are used for high gate count or high I/O count devices in packages, where heat dissipation without the enhancement might be a handicap for device performance. Such devices include XC4013E, XC4020E, XC4025E, and XC5215. • The HQ series at the 240-pin count level or below are offered with the heatsink at the bottom of the package. This was done to ensure pin to pin compatibility with the existing PQ packages. At the 304-pin count level, the HQ is offered with the heatsink up. This arrangement offers a better potential for further thermal enhancement by the designer. X-Ref Target - Figure 1-12 A. Die Up / Heatsink Down B. Die Down / Heatsink Up A. Heatsink Down Orientation B. Heatsink Up Orientation UG112_c1_12_040709 Figure 1-12: • Heatsink Orientation In the die-up/heatsink-down configuration, the heatsink surface is insulated. Package Mass Table The numbers provided in Table 1-3 represent average values for typical devices used in the package. Die size variation from device to device, slight changes in moisture content, number of specific layers used in the specific substrate etc., will provide some variation. In some cases the data accuracy can be up to ±10%. More precise numbers for specific devices in a lot can be obtained from in situ weighing. If this is critical, specific lot information can be requested. 26 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Mass Table Table 1-3: Package Mass (Weight) by Package Type Package Description Mass (g) BF957, BFG957 957 ball flip-chip BGA 40 x 40 body (1.27 mm pitch) 18.5 BG225, BGG225 Molded BGA 27 mm Full Matrix 2.2 BG256, BGG256 Molded BGA 27 mm Peripheral 2.2 BG352, BGG352 SuperBGA 35 x 35 mm Peripheral 7.1 MPM BGA 35 x 35 mm (1.27 mm pitch) 4.6 BG432, BGG432 SuperBGA 40 x 40 mm Peripheral 9.1 BG492, BGG492 Molded BGA 35 mm (1.27 mm pitch) 4.6 BG560, BGG560 SuperBGA 42.5 x 42.5 mm SQ 12.3 BG575, BGG575 575 BGA 31 x 31 mm body (1.27 mm pitch) 4.4 BG728, BGG728 728 BGA 35 x 35 mm body (1.27 mm pitch) 6.2 CB100 NCTB Top Brazed XC3000/XC4000 VER 10.8 CB164 NCTB Top Brazed XC3000/XC4000 VER 11.5 CB196 NCTB Top Brazed XC4000 VER 15.3 CB228 NCTB Top Brazed XC4000 VER 17.6 CC20 Ceramic Leaded Chip Carrier 8.4 CC44 Ceramic Leaded Chip Carrier 2.9 CD48 Ceramic Side Brazed DIP 8.0 CD8 Ceramic Side Brazed DIP 0.9 CF1144 Ceramic Column flip chip, 35 x 35 mm, 1.0 mm pitch 44.0 CG560 Ceramic SPGA 42.5 x 42.5 44.0 CG717 Ceramic Column Grid Array, 35 x 35 mm, 1.27 mm pitch 13.3 CSP 56 BGA 6 mm (0.5 mm pitch) 0.1 CSP 132 BGA 8 x 8 mm, 0.5 mm ball pitch 0.1 CSP 48 BGA 7 mm (0.8 pitch) 0.2 CS144, CSG144 CSP 144 BGA 12 mm (0.8 pitch) 0.3 CS280, CSG280 CSP 280 BGA 16 mm (0.8 pitch) 0.5 CS484, CSG484 CSP 484 BGA 19 mm (0.8 pitch) 1.4 Cerdip Package (.300" Row Spacing) 1.1 FF665, FFG665 Flip-chip BGA 27 x 27 mm 1.0 mm pitch 4.4 FF668, FFG668 668 ball Ceramic Column flip-chip BGA, 27 x 27 mm, 1.0 mm ball pitch 4.4 BG388 CP56, CPG56 CP132, CPG132 CS48, CSG48 DD8 Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 27 R Chapter 1: Package Information Table 1-3: Package Mass (Weight) by Package Type (Cont’d) Package Mass (g) FF672, FFG672 672 ball flip-chip BGA, 27 x 27 mm, 1.0 mm ball pitch 4.4 FF676, FFG676 676 ball flip-chip BGA, 27 x 27 mm, 1.0 mm pitch Full 4.4 FF896, FFG896 896 ball flip-chip BGA 31 x 31 mm body (1.0 mm pitch) 11.2 FF1136, FFG1136 Flip-chip BGA, 35 x 35 mm, 1.0 mm 14.0 FF1148, FFG1148 1148 ball flip-chip BGA 35 x 35 mm body (1.0 mm pitch) 14.0 FF1152, FFG1152 1152 ball flip-chip BGA 35 x 35 mm body (1.0 mm pitch) 14.0 FF1153, FFG1153 Flip-chip BGA 35 mm x 35 mm 1.0 mm 14.0 FF1513, FFG1513 1513 ball flip-chip BGA 40 x 40 mm body (1.0 mm pitch) 17.0 FF1517, FFG1517 1517 ball flip-chip BGA 40 x 40 mm body (1.0 mm pitch) 17.2 FF1696, FFG1696 1696 ball flip-chip BGA 42.5 x 42.5 mm body (1.0 mm pitch) 20.5 FF1704, FFG1704 1704 ball flip-chip BGA 42.5 x 42.5 mm body (1.0 mm pitch) 21.1 FF1738, FFG1738 Flip-chip BGA 42.5 x 42.5 mm 1.0 mm pitch 22.0 FF1760, FFG1760 Flip-chip BGA 42.5 x 42.5 mm 1.0 mm pitch 22.0 FG256, FGG256 Fine pitch BGA 17 x 17 mm, 1.0 mm ball pitch 0.8 FG320, FGG320 Fine pitch BGA 19 x 19 mm, 1.0 mm ball pitch 1.4 FG324, FGG324 Molded BGA 23 mm 1.0 mm pitch 2.2 FG456, FGG456 Fine pitch BGA 23 x 23 mm, 1.0 mm ball pitch 2.2 FG400, FGG400 Fine pitch BGA 21 x 21 mm, 1.0 mm ball pitch 2.2 FG484, FGG484 Molded BGA 23 mm 1.0 mm pitch 2.2 FG556, FGG556 Fine pitch BGA 31 x 31 mm, 1.0 mm ball pitch 3.9 SuperBGA 35 x 35 mm, 1.0 mm pitch 7.1 FG676, FGG676 Fine pitch BGA 27 x 27 mm, 1.0 mm ball pitch 3.06 FG680, FGG680 Fine pitch BGA 40 x 70 mm, 1.0 mm ball pitch 10.6 FG860, FGG860 Fine pitch BGA 42.5 x 42.57 mm, 1.0 mm ball pitch 13.8 FG900, FGG900 Fine pitch BGA 31 x 31 mm, 1.0 mm ball pitch 4.2 FG1156, FGG1156 Fine pitch BGA 35 x 35 mm, 1.0 mm ball pitch 6.2 CSP 48BGA, 6 x 8 mm, 0.8 mm ball pitch 0.1 FG580 FS48, FSG48 28 Description www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Mass Table Table 1-3: Package Mass (Weight) by Package Type (Cont’d) Package Description Mass (g) 256 Thin PBGA 17 x 17 mm body (1.0 mm pitch) 0.9 HQ160, HQG160 Metric 28 x 28 0.65 mm 1.6H/S Die Up 10.8 HQ208, HQG208 Metric 28 x 28 H/S Die Up 10.8 HQ240, HQG240 Metric QFP 32 x 32 H/S Die Up 15.0 HQ304, HQG304 Metric QFP 40 x 40 H/S Die Down 26.2 HT144 Thin QFP 1.4 H/S (HQ) Die Up 2.6 HT176 Thin QFP 1.4 H/S (HQ) Die Up 3.5 PC20, PCG20 PLCC JEDEC MO-047 0.8 PC28, PCG28 PLCC JEDEC MO-047 1.1 PC44, PCG44 PLCC JEDEC MO-047 1.2 PC68, PCG68 PLCC JEDEC MO-047 4.8 PC84, PCG84 PLCC JEDEC MO-047 6.8 PD8, PDG8 DIP .300 Standard 0.5 PD48 DIP .600 Standard 7.9 PG68 Ceramic PGA “Cavity Up” 11 x 11 7.0 PG84 Ceramic PGA “Cavity Up” 11 x 11 7.2 PG84 Windowed CPGA “Cavity Up” 11 x 11 7.5 PG120 Ceramic PGA 13 x 13 Matrix 11.5 PG132 Ceramic PGA 14 x 14 Matrix 11.8 PG144 Ceramic PGA 15 X15 Cavity Up 16.9 PG156 Ceramic PGA 16 x 16 Matrix 17.1 PG175 Ceramic PGA 16 x 16 Standard Version 17.7 PG191 Ceramic PGA 18 x 18 Standard (All) 21.8 PG223 Ceramic PGA 18 x 18 Type 26.0 PG299 Ceramic PGA 20 x 20 Heatsink 37.5 PG299 Ceramic PGA 20 x 20 Matrix 29.8 PG411 Ceramic PGA 39 x 39 Stagger 36.7 PG475 Ceramic PGA 41 x 41 Stagger 39.5 PG559 Ceramic PGA 43 x 43 44.5 PQ44, PQG44 EIAJ 10 x 10 x 2.0 QFP 0.5 PQ100, PQG100 EIAJ 14 x 20 QFP - 1.60 (default) 1.6 PQ100, PQG100 EIAJ 14 x 20 QFP - 1.80 (not used) 1.6 FT256, FTG256 Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 29 R Chapter 1: Package Information Table 1-3: Package Mass (Weight) by Package Type (Cont’d) Package Mass (g) PQ100, PQG100 EIAJ 14 x 20 QFP - 1.95 (old version) 1.6 PQ160, PQG160 EIAJ 28 x 28 0.65 mm 1.60 5.8 PQ208, PQG208 EIAJ 28 x 28 0.5 mm 1.30 5.3 PQ240, PQG240 EIAJ 32 x 32 0.5 mm 7.1 Flip-chip BGA 17 x 17, 0.8 mm pitch 1.6 Version 1 0.150/50 mil 0.1 SO20, SOG20 300 mil SOIC 0.5 SO24 300 mil SOIC 0.6 TQ100, TQG100 Thin QFP 1.4 mm thick 0.7 TQ128, TQG128 Thin QFP 1.4 mm thick RECT 0.8 TQ144, TQG144 Thin QFP 1.4 mm thick 1.4 TQ176, TQG176 Thin QFP 1.4 mm thick 1.9 Thin SOIC - II 0.1 VO20, VOG20 Thin SSOP, 4.4 mm 0.1 VO48, VOG48 Thin SOP 0.5 VQ44, VQG44 Thin QFP 1.0 thick 0.4 VQ64, VQG64 THIN QFP 1.0 thick 0.5 VQ100, VQG100 Thin QFP 1.0 thick 0.6 SF363, SFG363 SO8, SOG8 VO8, VOG8 30 Description www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Chapter 2 Pack and Ship Introduction Xilinx offers several packing options for our through-hole and surface-mount products. The devices are packed in either tubes, trays, or tape and reel. Tape and Reel Xilinx offers a tape and reel packing for PLCC, BGA, QFP, and SO packages. The packing material is made of black conductive polystyrene and protects the packages from mechanical and electrical damage. The reel material provides a suitable medium for pick and place equipment. The tape and reel packaging consists of a pocketed carrier tape, sealed with a protective cover. The device sits on pedestals (for PLCC, QFP packages) to protect the leads from mechanical damage. All devices loaded into the tape carriers are baked, lead scanned before the cover tape is attached and sealed to the carrier. In-line mark inspection for mark quality and package orientation is used to ensure shipping quality. Benefits • Increased quantity of devices per reel versus tubes improves cycle time and reduces the amount of time to index spent tubes. • Tape and reel packaging enables automated pick and place board assembly. • Reels are uniform in size enabling equipment flexibility. • Transparent cover tape allows device verification and orientation. • Antistatic reel materials provides ESD protection. • Carrier design include a pedestal to protect package leads during shipment. • Bar code labels on each reel facilitate automated inventory control and component traceability. • All tape and reel shipments include desiccant pouches and humidity indicators to ensure products are safe from moisture. • Compliant to Electronic Industries Association (EIA) 481. Material and Construction Carrier Tape. • The pocketed carrier tape is made of conductive polystyrene material, or equivalent, with a surface resistivity level of less than 106 ohms per square inch. • Devices are loaded “live bug” or leads down, into a device pocket. • Each carrier pocket has a hole in the center for automated sensing of whether a unit is in the pocket or not. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 31 R Chapter 2: Pack and Ship • Sprocket holes along the edge of the carrier tape enable direct feeding into automated board assembly equipment. Cover Tape An anti-static, transparent, polyester cover tape, with heat activated adhesive coating, sealed to the carrier edges to hold the devices in the carrier pockets. Surface resistivity on both sides is less than 1011 ohms per square inch. Reel The reel is made of anti-static polystyrene material. The loaded carrier tape is wound onto this conductive plastic reel. A protective strip made of conductive polystyrene material is placed on the outer part of the reel to protect the devices from external pressure in shipment. Surface resistivity is less than 1011 ohms per square inch. Device loading orientation is in compliance with EIA Standard 481. Bar Code Label The bar code label on each reel provides customer identification, device part number, date code of the product and quantity in the reel. Print quality are in accordance with ANSI X3.182-1990 Bar Code Print Quality Guidelines. Presentation of Data on labels are EIA-556-A compliant. The label is an alphanumeric, medium density Code 39 labels. This machine-readable label enhances inventory management and data input accuracy. Shipping Box The shipping container for the reels are in a 13 in. x 13 in. x 3 in. C-flute, corrugated, #3 white “pizza box,” rated to 200 lb. test. 32 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Table 2-1: Tape and Reel Tape and Reel Packaging Package Code Qty. Per Reel Reel Size (inches) Carrier Width (mm) Cover Width (mm) Pitch (mm) BG225(1), BGG225(1) 500 13 44 37.5 32 BG256(1), BGG256(1) 500 13 44 37.5 32 BG272(1), BGG272(1) 500 13 44 37.5 32 CP56(1), CPG56(1) 4000 13 12 9.2 8 CS48(1), 1500 13 16 13.3 12 CS144(1), CSG144(1) 2000 13 24 21.0 16 FG256(1), FGG256(1) 1000 13 24 21.0 20 FG456(1), FGG456(1) 500 13 44 37.5 32 FG676(1), FGG676(1) 500 13 44 37.5 32 FT256, FTG256 1000 13 24 21 20.0 PC20(1), PCG20(1) 750 13 16 13.3 12 PC44(1), PCG44(1) 500 12 32 25.5 14 PC68(1), PCG68(1) 250 13 44 37.5 32 PC84(1), PCG84(1) 250 13 44 37.5 36 PQ100, PQG100 250 13 44 37.5 32 PQ160, PQG160 200 13 44 37.5 40 BG352(1), BGG352(1) 200 13 56 49.5 40 BG432(1), BGG432(1) 200 13 56 49.5 48 BG560(1), BGG560(1) 200 13 56 49.5 48 SO8 750 7 12 9.2 8 SO20 1000 13 24 21.0 12 TQ100, TQG100 1000 13 24 21.0 32 TQ144, TQG144 750 13 44 37.5 24 VO8, VOG8 750 7 12 9.2 8 VO20, VOG20 2500 13 16 13.3 12.0 VQ44, VQG44 2000 13 24 21.0 16 VQ64, VQG64 2000 13 24 21.0 16 VQ100, VQG100 1000 13 24 21.0 32 CSG48(1) Note: 1. In-house capability. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 33 R Chapter 2: Pack and Ship Standard Bar Code Label Locations X-Ref Target - Figure 2-1 Antistatic Tape Desiccant Bag Bar Code Label ESD Label Antistatic Tape Desiccant Bag UG112_C2_01_111208 Figure 2-1: 34 Standard Bar Code Label Locations www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Tubes X-Ref Target - Figure 2-2 Desiccant Included Label Bar Code Label ESD Label Vacuum Sealed Bag UG112_C2_02_111208 Figure 2-2: Standard Bar Code Label Locations Tubes Tubes are used as unit carriers for most of Xilinx smaller packages. All of our tubes are coated with an antistatic material to protect the product from ESD damage. Table 2-2: Standard Device Quantities per Tube Full Tube Quantity Max. Tube Qty. per ESD Bag (8.5” x 27”) Max. Tube Qty. per ESD Bag (12” x 27”) PC84, PCG84, WC84 15 24 40 PC68, PCG68, WC68 18 36 50 PC44, PCG44, CC44, WC44 26 40 50 PC28, PCG28 37 40 50 PC20, PCG20, CC20 46 50 60 CD48 7 24 30 PD48 7 24 30 CD8 37 10 15 PD8 50 50 60 DD8 50 50 60 SO24 31 40 50 Package Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 35 R Chapter 2: Pack and Ship Table 2-2: Standard Device Quantities per Tube SO20 37 60 100 SO8 98 240 350 VO20, VOG20 74 240 350 VO24 62 240 350 VO8, VOG8 98 240 350 Trays Trays are used to pack most of Xilinx surface-mount devices since they provide excellent protection from mechanical damage. In addition, they are coated with antistatic material to provide protection against ESD damage and can withstand operation temperature of up to 150o C. Table 2-3: Standard Device Counts per Tray and Box Max Number of Devices Per Tray Max Number of Units In One Internal Box BF957/BFG957 21 105 BG225/BGG225 BG256/BGG256 40 200 BG352/BGG352 BG492/BGG492 BG728/BGG728 24 120 BG432/BGG432 21 105 BG560/BGG560 12 60 BG575/BGG575 27 135 CB100, CB164, CB196, CB228 4 20 CP56/CPG56 360 1800 CP132/CPG132 360 1800 CS48/CSG48 416 2080 CS144/CSG144 198 990 CS225/CSG225 160 800 CS280/CSG280 119 595 CS324/CSG324 126 630 CS484, CSG484 84 420 FG256/FGG256 90 450 FG320/FGG320 84 420 FG324/FGG324 60 300 Package 36 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Trays Table 2-3: Standard Device Counts per Tray and Box (Cont’d) Max Number of Devices Per Tray Max Number of Units In One Internal Box FG400/FGG400 FG456/FGG456, FG484/FGG484 60 300 FG676/FGG676 40 200 FG860 12 60 FG900/FGG900 27 135 FG680/FGG680 21 105 FF323/FFG323 FF324/FFG324 84 420 FG1156/FGG1156 24 120 FF665/FFG665 FF668 / FFG668 40 200 FF672/FFG672 FF676/FFG676 40 200 FF896/FFG896 27 135 FF1136/FFG1136 FF1148/FFG1148 FF1152/FFG1152 FF1153/FFG1153 FF1156/FFG1156 24 120 FF1513/FFG1513 FF1517/FFG1517 21 105 FF1696/FFG1696 FF1704/FFG1704 FF1738/FFG1738 FF1760/FFG1760 12 60 FS48/FSG48 108 525 FT256/FTG256 90 450 HQ160/HQG160 HQ208/HQG208 24 120 HQ240/HQG240 24 120 HQ304 12 60 HT144 60 300 HT176 40 200 PG68, PG84 40 200 PG120 24 120 PG132/PP132 21 105 PG144 18 90 Package Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 37 R Chapter 2: Pack and Ship Table 2-3: Standard Device Counts per Tray and Box (Cont’d) Max Number of Devices Per Tray Max Number of Units In One Internal Box PG156/PP156 PG175/PP175 14 70 PG191, PG223 12 60 PG299 10 50 PG411, PG475, PG559 10 50 PQ44/PQG44 96 480 PQ100/PQG100 66 330 PQ160/PQG160 PQ208/PQG208 24 120 PQ240/PQG240 24 120 QFG32 490 2450 QFG48 260 1300 SF363/SFG363 90 450 TQ144, TQG144 60 300 TQ160, TQ176 40 200 TQ100/TQG100 90 450 TQ128 72 360 VO48/VOG48 96 480 VQ44/VQG44 VQ64/VQG64 160 800 VQ100/VQG100 90 450 Package 38 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Chapter 3 Thermal Management & Thermal Characterization Methods & Conditions Introduction This chapter addresses the need to manage the heat generated in CMOS logic devices, an industry wide pursuit, and describes the measures Xilinx uses and recommends to its customers to quantify and manage potential thermal problems in FPGAs. Thermal Management Modern high-speed logic devices consume an appreciable amount of electrical energy. This energy invariably turns into heat. Higher device integration drives technologies to produce smaller device geometry and interconnections. With chip sizes getting smaller and circuit densities at their highest levels, the amount of heat generated on these fastswitching CMOS circuits can be very significant. As an example, Xilinx 7 series FPGAs incorporate multiple processors, multiple-gigabit transceivers, digital-controlled impedance I/Os, and I/Os capable of supporting various high current standards. Special attention must be paid to addressing the heat removal needs for these devices. The need to manage the heat generated in a modern CMOS logic device is not unique to Xilinx. This is a general industry pursuit. However, unlike the power needs of a typical industry application-specific integrated circuit (ASIC) gate array, the field-programmable device’s power requirement is not determined in the factory. Customers' designs can vary in power as well as physical needs. This is the challenge in predicting FPGA thermal management needs. Xilinx Packages In assigning packages to devices, efforts have been made to tailor the packages to the power needs of typical users. For each device, suitable packages are chosen to handle typical designs and gate utilization for the device. Sometimes, the choice of a package as the primary or internal heat removal casing works well without any external heat management. Increasingly, with highly integrated devices, the need arises for customers to utilize an FPGA device beyond typical design parameters. For these situations, the use of the primary package without external enhancement might not be adequate to address the heat removal needs of the device. In that case it becomes essential to manage the heat removal through external means. Heat has to be removed from a device to ensure that the device is maintained within its functional and maximum design temperature limits. If heat buildup becomes excessive, the device temperature might exceed its limits. Consequently, the device might fail to meet the speed-file performance specifications. In addition to performance considerations, there is also the need to satisfy system reliability objectives by Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 39 Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions R operating at a lower temperature. Failure mechanisms and the failure rate of devices have an exponential dependence on the device’s operating temperatures. Thus, the control of the package, and by extension device temperature, is essential to ensure product reliability. Heatsinks, Heatsink Interface Materials, and Heatsink Attachments The primary purpose of a heatsink is to help remove heat from a device more efficiently than just the device’s package alone. Heatsinks accomplish this by decreasing the overall thermal resistance between the case of a device and the surrounding air. They effectively increase the surface area over which heat can be dissipated. Three factors should be considered for a given heatsink design: the heatsink itself, the heatsink interface material, and the attachment mechanism. With a heatsink attached to an integrated circuit (IC), heat from the device flows from the junction of the device to the case, from the case to the interface material, from the interface material to the heatsink, and finally from the heatsink to ambient air. In situations where a heatsink is used with a heatsink compound, the thermal resistance of the heatsink is referenced as θSA (sink-to-ambient) and that of the attached material as θCS (case-to-heatsink). These thermal resistances can be added. For example, θJAtop = θJCtop + θCS + θSA is an expression used in heatsink situations with interface material resistance θCS. Heatsinks come in a variety of materials, shapes, and sizes, but share the common goal of maximizing the heat dissipation between the device that they attach to and the surrounding air, which might be still air or air flowing via a forced convection system (typically fans). The improved heat dissipation of a heatsink is accomplished by maximizing surface area through the use of fins of varying dimensions and spacings, and might also include components such as copper heat spreaders that can help distribute the heat from smaller ICs more evenly over the surface area of the heatsink. Heatsink interface materials, which are used between the heatsink and the device, can be of many kinds, including greases, gels, adhesives, tapes, silicon rubber materials, and special thermoplastic adhesives known as phase change materials. Each of these has unique benefits and drawbacks that need to be considered for their ability to meet the requirements and priorities of the particular design. When choosing a heatsink, the manufacturer should provide recommendations for possible interface materials. Heatsink attachments attach the heatsink either directly to the device package, or to the PCB around the device. Possible heatsink attachments include thermal epoxies and tapes, mechanical attachments such as clips that attach directly to the package, or pins and screws that attach to the PCB. Each of these attachments has unique benefits and drawbacks that need to be considered for their ability to meet the needs of the particular design. When choosing a heatsink from a manufacturer, the attachment mechanism can be part of the heatsink, or they might be options recommended by the manufacturer. For additional information about heatsinks and other thermal management solutions, refer to “Additional Power Management Options,” page 57. Power Estimation Tools Xilinx offers two software-based power-estimator tools to help the user predict power consumption: XPower Estimator (XPE) and XPower Analyzer (XPA). These tools provide the capability of performing detailed power estimation and analysis for designs running in Xilinx FPGAs. With these tools, it is possible to perform “what if” scenarios to analyze the power consumption of variations to a given design. θJA for still or forced air flow, θJB, and even θSA for heatsinks are all provided as estimates within the XPE tool. These can also be overridden if the values are extracted from higher accuracy simulations or methods. A key output of these tools is the device junction temperature (TJ) based on the power estimates. 40 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Thermal Management Like most tools, however, the predicted output depends on the work put into the predicting effort. For more information on power estimation and optimization in the Xilinx design tools, see: • UG786, Power Methodology Guide • UG440, XPower Estimator User Guide • UG907, Vivado Design Suite User Guide: Power Analysis and Optimization • XPower Analyzer details www.xilinx.com/products/design_tools/logic_design/verification/xpower_an.htm • UG733, Xilinx Power Tools Tutorial Compact Thermal Models While the XPE and XPA power-estimator tools can provide the traditional thermal resistance data for all Xilinx packages in addition to the estimated power consumption of a design, this resistance data is measured using a prescribed JEDEC standard that might not necessarily reflect the actual user environment. The quoted θJA and θJC numbers are environmentally dependent, and JEDEC has traditionally recommended that these be used with that awareness. For more accurate junction temperature prediction, these might not be enough, and a system-level thermal simulation might be required. To aid in this, Delphi boundary condition independent compact thermal models (BCI-CTM) are available for most Xilinx device/packages at the Xilinx support download center: http://www.xilinx.com/support/download/index.htm. These models are available to use with computational fluid dynamic (CFD) software to do detailed thermal simulation and analysis of entire boards and systems, including the printed circuit board design, other devices, heatsinks, enclosures, and airflows. Xilinx provides these models in both the Mentor FloTHERM and ANSYS Icepack formats. Figure 3-1 shows two forms of compact thermal model topologies, the DELPHI BCI-CTM, and the two-resistor model. Xilinx provides models in the DELPHI BCI-CTM format. X-Ref Target - Figure 3-1 DELPHI BCI-CTM Topology for FCBGA TI Two-Resistor Model TO R jc Junction Side Junction R jb BI BO UG112_c3_06 _110711 Figure 3-1: Device Package User Guide UG112 (v3.7) September 5, 2012 Compact Thermal Model Topologies www.xilinx.com 41 R Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions PCB Design: Layer, Board, and Layout Considerations The majority of heat flow from an IC generally follows two paths: • Through the top of the case to the surrounding air (optionally through a heatsink) • Through the soldered interface to the PCB, and from the PCB to the surrounding air Thus, a two-resistor compact model is commonly used to model the thermal behavior of a package. The two-resistor compact model for a package consists of θJAtop in parallel with θJAboard. A graphical representation of this can be found in the JEDEC standard JESD51-12, as shown in Figure 3-2. X-Ref Target - Figure 3-2 Case-to-Ambient Resistance Junction-to-Case Resistance Junction JCtop Case Node CA JB Board Node BA Junction-to-Board Resistance Figure 3-2: Board-to-Ambient Resistance Ambient UG112_c3_15_110711 Equivalent Thermal Resistance Diagram of the Two-Resistor Model on a PCB While this is known as a two-resistor model, it is really more of a four-resistor model, with θJAtop being the sum of θJCtop + θCA, and θJAboard being the sum of θJB + θBA. The overall θJA value can be estimated by calculating the parallel thermal resistance of θJAtop in parallel with θJAboard. The θJB and θBA thermal resistances can vary significantly depending on the PCB design, in particular due to the size of the board and the number and thickness of the copper layers. The more the copper material and surface area, the better the heat dissipation and the lesser the thermal resistance between the devices and the board (θJB), as well as between the board and the surrounding air (θJA). Larger boards provide larger surface area and usually provide more copper material. As layer counts and copper thickness increase, θJB and θJA tend to decrease—in particular for power or ground plane layers, as those tend to be solid copper layers. Table 3-2, page 45 illustrates the effect of both board size and layer count on the overall θJA. Other layout considerations that can affect θJB and θBA include the types of power and ground plane layers that are used (hatching vs. solid), and the use of thermal reliefs, particularly at the board vias that connect the device being analyzed to the ground and VCC planes. Historically, hatched plane layers provided a number of benefits including aiding in the manufacturing process and providing flexibility to meet transmission line impedance goals. However, they had the drawback of not having a solid plane of copper to aid with thermal heat dissipation. There are better alternatives to cross-hatching planes for modern board design and fabrication, and consequently, this technique is seldom used today. Because of the reduction in the thermal heat dissipation, it is strongly recommended to completely avoid the use of hatched planes. Thermal reliefs at the through-hole pads and vias serve the purpose of actually increasing the thermal impedance between the board landing pads for a component and the copper planes and traces that it connects to. This is used to improve the solderability of devices, particularly for devices with through-hole packages that require wave solder or similar assembly techniques (vs. solder oven installation). However, thermal reliefs work in direct conflict to the goal of improving 42 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Thermal Management the overall thermal heat dissipation for when the board is operating—the thermal reliefs effectively increase θJB. Most Xilinx device packages are not of the through-hole type and are primarily offered in QFP and BGA packages. For these package types, it is not necessary to use thermal reliefs on the pad vias for assembly purposes, and it is advised to avoid doing so to minimize θJB. Ambient temperature, Enclosures, and Airflow One of the most critical variables required to analyze the thermal management of ICs on a PCB is the device’s junction temperature (TJ). All ICs have requirements or specifications for minimum and maximum TJ for the device and can include absolute maximum ratings, as well as recommended operating condition ratings (Xilinx devices have both). TJ is a direct function of the power dissipated in the device, the thermal conductivity of the device’s package, and the PCB it is mounted on, the ambient temperature (TA) inside the enclosure the board is contained within, and the cooling systems that might include natural airflow, forced airflow, heatsinks, or even more complex systems. When designing boards and the enclosures that they are housed in, it is possible to select the device placement to create air paths and take advantage of natural convection cooling, and also to optimize the physical locations so that heat sensitive devices are not next to heat generating devices. However, it is important to also consider challenges presented by the specific manufacturing or application environment. For example, when dealing with dirty industrial environments, the objective is to find a thermal management solution that includes protection against dust, dirt, and oil that a sealed enclosure provides. To this end, enclosure designs need to strike a balance between protecting components from the detrimental influences of the outside environment, while also preventing excessive build-up of heat and humidity inside the enclosure. It is also important to consider the enclosure’s surface area because the physical size of the enclosure is a primary factor in determining its ability to dissipate heat to the surrounding environment. Airflow is a critical factor to consider when evaluating or optimizing the heat dissipation for devices on a PCB. Airflow provides heat dissipation through convection. It is a key component for determining the thermal resistance between a device and the surrounding air (the overall θJA). Even still air in which the heat dissipation is dominated by radiation typically has some small amounts of airflow created by the natural heat radiating from the devices inside the PCBs. However, the direct use of forced air as a tool to improve heat dissipation through convection can be a required component of a system design. In sealed enclosures, it is possible to use circulating fans to reduce hot spots within the enclosure, as well as fans mounted directly to heatsinks. For non-sealed enclosures, heat dissipation can be maximized by using cabinet fans to force airflow through the enclosure in from and out to the surrounding environment. Humidity Humidity is a thermal management component that is frequently overlooked. While the humidity of the air inside an enclosure can somewhat affect the air’s ability to conduct heat, this is generally considered an insignificant effect. A bigger challenge related to humidity is to identify a thermal solution that can regulate both humidity and temperature inside the enclosure. If left unchecked, excessive humidity can lead to condensation and subsequent corrosion of both the enclosure and the internal components, as well as increased heat from corroded connection points. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 43 R Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions Altitude Because the density of air varies with altitude, so does the efficiency of a heatsink. As can be seen from Table 3-1, the effects are not insignificant. Table 3-1: Altitude Derating Factors Altitude (Metres) Altitude (Feet) Derating Factor 0 (sea level) 0 1.00 1,000 3,000 0.95 1,500 5,000 0.90 2,000 7,000 0.86 3,000 10,000 0.80 3,500 12,000 0.75 The altitude effect should be considered in all cases. While the air temperature of an indoor environment is normally controlled and is not affected by altitude change, the indoor air pressure does change with altitude. Because many electronic systems are installed at an elevated altitude, it is necessary to derate the heatsink performance mainly due to the lower air density caused by the lower air pressure at higher altitudes. Table 3-1 shows the performance derating factors for typical heatsinks at high altitudes. To determine the actual thermal performance of a heatsink at altitudes other than sea level, the thermal resistance values read off from the performance graphs should be divided by the derating factor before the values are compared with the required thermal resistance. For example, a 1°C/W heatsink would become 1.16°C/W at an altitude of 2,000 meters, or 1.25°C/W at 3,000 meters. Thermal Data Comparison X-Ref Target - Figure 3-3 40.0 35.0 FG456 FG484 FG556 FT256 FG676 ΘJA (°C/W) 30.0 25.0 20.0 15.0 10.0 5.0 100 200 300 400 500 Die Size (mils) UG112_c3_07 _040709 Figure 3-3: Effect of Die Size on the Thermal Resistance (θJA) of PBGA Packages 44 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Thermal Management X-Ref Target - Figure 3-4 30 ΘJA (°C/W) 25 20 15 10 5 0 100 200 400 600 800 Air Flow (linear ft/min) XC4010E-HQ208 XC4013E-HQ240 XC4010E-PQ208 XC4013E-PQ240 XC4025E-HQ304 UG112_c3_08 _040709 Figure 3-4: Table 3-2: Effect of Air Flow on the Thermal Resistance (θJA) of HQ/PQ Packages Impact of Mounted Board Characteristics on θJA Flip-Chip FF1148 Xilinx 35 x 35 mm Board Size FF1148-4VLX100 Layer Count of Mounted Board 4 in x 4 in Board 10 in x 10 in Board 20 in x 20 in Board 4 10.1 (100%) 9.2 (91%) N/A 8 8.9 (88%) 6.1 (60%) 5.5 (54%) 12 8.3 (82%) 5.2 (51%) 4.9 (48%) 16 8.0 (79%) 5.0 (50%) 4.6 (46%) 24 N/A 4.7 (47%) 4.5 (44%) 1. JEDEC mount conditions. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 45 R Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions X-Ref Target - Figure 3-5 20 ΘJA (°C/W) 15 10 5 0 A B C D E F PG299 - Various Enhancements A Standard Pkg B Pkg+Finned HS (Passive) C Pkg+Active Fan (V=0) D Pkg+Active Fan (V=12) E Std Pkg +250LFM F Pkg+Finned HS+ 250LFM UG112_c3_09 _040709 Figure 3-5: Effect of Active and Passive Heat Sinks on the Thermal Resistance (θJA) of PG299 Packages X-Ref Target - Figure 3-6 35.0 30.0 25.0 )W/C¡( 20.0 Θ AJ 15.0 10.0 5.0 0.0 0 100 200 300 400 500 600 700 800 Air Flow (linear ft/min) XC2S300E-FT256 XC3S1500-FG456 XCV1000E-FG680 XC2V6000-FF1152 XC2VP40-FG676 UG112_C3_10 _111208 Figure 3-6: 46 Effect of Air Flow on the Thermal Resistance (θJA) of BGA Packages www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Thermal Characterization Methods and Conditions Package Thermal Characterization Methods and Conditions Characterization Methods Xilinx uses several methods to obtain thermal performance characteristics of integrated circuit packages. The methods include thermal simulation using finite element software tools, and an indirect electrical method utilizing an isolated diode on a special thermal test die. This can even be done on a Xilinx FPGA housed in the package of interest or by using System Monitor to measure die temperature. The majority of the data reported by Xilinx on previous technologies is based on the indirect diode method, but on newer devices, System Monitor has been the main characterization method. Simulation tools, calibrated with actual measurement data, are used to supplement thermal collateral data generation. Most published compact thermal model data is based on such an effort. Calibration of Isolated Diode In the direct electrical method, the forward-voltage drop of an isolated diode residing on a special test die or the temperature diode of the Xilinx FGPA is calibrated by applying a constant forcing current (from 0.100 mA to 0.500 mA) over a temperature range of 0°C – 125°C (degrees Celsius). The calibrated packaged device is then mounted on an appropriate board and placed in the testing environment — e.g., still air or forced convection. Power (PD) is applied to the device through diffused resistors on the same thermal die. In the FPGA case, a known self-heating program is loaded and clocked to generate the monitored power. Usually, between 0.5 watts to 4 watts can be applied. Higher power (up to 10 watts) is possible, depending on the package. The resulting rise in junction temperature is monitored with the forward-voltage drop of the precalibrated diode. Calibration of System Monitor The System Monitor calibration is done through the internal settings of the device. A voltage reference regulator that sets the accuracy level is connected to the System Monitor. This voltage reference should be set to a level that is above the voltage limit of the System Monitor, which is set to 3.0 V. Providing a voltage below this limit compromises the accuracy of the System Monitor. Simulation Methods In the simulation effort, finite element (FEA) methodology is used to represent the packages of interest. The package geometrical details (based on CAD data), as well as the board stack-up details are captured. Published material properties are used as input to derive the thermal characteristics based on JEDEC environment and boundary conditions. Using sample test data, the FEA inputs and assumptions are optimized to minimize variation between measurement and simulation. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 47 Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions R X-Ref Target - Figure 3-7 UG112_C3_01_111208 Figure 3-7: Simulation Tool Outputs: a) Quarter Model of a Package, b) CTM in JEDEC Enclosure Once the simulation inputs and assumptions are refined, the FEA method is used to obtain the thermal characteristics including thermal models of devices in a family using the same material set and construction details. Measurement Standards Previously, Xilinx Thermal lab used the SEMI thermal test methods (#G38-87) and associated SEMI-based boards (#G42-87) to perform thermal characterization. Most of our recent measurements and simulations are based on provision of the JEDEC and EIA Standard — JESD51-n series specifications. It is our assessment that the latter standard offers some options that are not available in the SEMI method. We will continue to quote the SEMI-based data (designated by SEMI in the comment column) for older packages measured in the earlier era, and when we quote new data, they will be designated as JESD in the comment section. It is also essential to note that these standard-based measurements give characterization results that allow packages and conditions to be compared. Like miles per gallon (MPG) figures quoted on new cars, the numbers should be used with caution. As specific user environments will not be identical to the conditions used in the characterization, the numbers quoted might not precisely predict the performance of the package in an application-specific environment. For better in-system TJ prediction, Xilinx provides compact thermal models for its devices. Some of these are available in model libraries for download at the Download Center http://www.xilinx.com/support/download/index.htm Models for older products can be requested from ctm_team@xilinx.com. Definition of Terms TJ – Junction Temperature, defined as the maximum temperature on the die, expressed in °C (degrees Celsius). TA – Ambient Temperature, defined as the temperature of the surrounding environment, expressed in °C (degrees Celsius). TC – Temperature of the package taken at a defined location on the body. In most situations, it is taken at the primary heat flow path on the package and will represent the hottest part on the package, expressed in °C. See the next item for when TC is taken at the top. 48 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Thermal Characterization Methods and Conditions TB – This is the board temperature taken at a predefined location on the board near the component under test, expressed in °C. PD – The total device power dissipation, expressed in watts. TS – This is the heatsink temperature, expressed in °C. Junction-to-Reference General Setup X-Ref Target - Figure 3-8 Environment Const Current Source D Vf R DUT If Environment may be: Still or Forced Air - Ja Or Circulated FC-40 - Jc, Jl D => Sensing Diode R => Diffused Resistors Resistor Supply Vr Ir Data Acquisition And Control Computer UG112_c3_02 _040709 Figure 3-8: Thermal Measurement Setup (Schematic for Junction to Reference) Junction-to-Case Measurement — θJC Theta-JC (θJC) measures the heat flow resistance between the die surface and the surface of the package (case). This data is relevant for packages used with external heatsinks. It assumes that heat is flowing through the top to the exclusion of the others. In the ideal case, all the heat is forced to escape the package at the path where TC is taken. The lateral heat flow is not allowed or minimized so that the source of temperature differential will be attributable to the total known heat input. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 49 Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions R X-Ref Target - Figure 3-9 UG112_C3_03_111208 Figure 3-9: θJC Measurement Setup A copper heatsink plate at the top of the package is used in θJC methods to achieve the forced preferred directional flow. Prior to 1999, the junction-to-case characterization on some heatsink packages was accomplished in a 3M Flourinert (FC-40) isothermal circulating fluid stabilized at 25°C. Current Xilinx data on θJC is simulated using the cold plate approach. Prior to 2010, The JEDEC standard proposed to use thermocouples to measure TC. The new JEDEC standard JESD51-14 does not include the measurement of case temperature. Instead, it describes the transient dual interface (TDI) test method for the measurement of the junction-to-case thermal resistance. From the previous JEDEC standards, with applied power (PD) and under stabilized conditions, case temperature (TC) is measured with a low gauge thermocouple (36-40 AWG) at the primary heat-flow path of the particular package. Junction temperature (TJ) is calculated from the diode forward-voltage drop from the initial stable condition before power is applied: θJC = (TJ – TC)/PD where the terms are as defined above. A poorly defined θJC condition usually leads to lower numbers being reported. In such cases, the recorded temperature difference (TJ-TC) is the result of having a fraction of the power going through the path. However, in the calculation, the full power is used. Because the necessary thermocouple measurement of the case temperature is prone to errors, these results are often not sufficiently reproducible. Some of the errors that could occur are: 50 • A temperature distribution at the package case while the thermocouple measures the temperature at its contact point to the case. This might not be the maximum case temperature. • A potentially low case temperature reading because the thermocouple beads are often not sufficiently insulated against the cold plate and could therefore be cooled from the wire and cold plate side. • The application of considerable clamping pressure to press the semiconductor device against the heatsink, which closes delaminations. • The drill hole for the thermocouple in the heatsink influencing the thermocouple measurement. This influence increases with smaller devices. www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Package Thermal Characterization Methods and Conditions The new JEDEC standard JESD51-14 specifies the TDI measurement method of the junction-to-case thermal resistance without a case temperature measurement. The thermal impedance or Zth-function ZθJC(t) of a semiconductor device that is heated with constant power (PH) starting at time t = 0 while its case surface is connected to a heatsink is defined as: ZθJC(t) = (TJ(t) – TJ(t = 0))/PH Thus, the thermal impedance equals the time-dependent change of the junction temperature TJ(t) divided by the heating power. If the cooling condition at the package case is changed, this should have no influence on the thermal impedance until the temperature starts to increase at the package case where the contact to the heatsink is located. However, a measurement with a different contact resistance changes the total thermal resistance at steady state and therefore separates the impedance curves of different measurements starting from the point where the external contact resistance begins, which can be identified as the package case interface. Two thermal impedance measurements are made with different contact resistances for cooling the package case surface connected to the heatsink to identify this surface in transient measurements. The cumulative thermal resistance at the separation point of these two measurements is defined as RθJC (θJC). Junction-to-Ambient Measurement — θJA X-Ref Target - Figure 3-10 UG112_C3_04_111208 Figure 3-10: θJA Measurement Setup SEMI method: Some of the data reported are based on the SEMI standard methods and associated board standards. θJA data reported as based on SEMI were measured on FR4-based PC boards measuring 4.5 in x 6.0 in x .0625 in (114.3 mm x 152.4 mm x 1.6 mm) with edge connectors. Several versions are available to handle various surface mount (SMT) devices. They are, however, grouped into two main types. Type I board (the equivalent of the JEDEC low-conductivity board) is single layer with two signal planes (one on each surface) and no internal Power/GND planes. This is the 2L/0P or 2S/0P board and the trace density on this board is less than 10% per side. The type II board (the equivalent of the JEDEC 2S/2P board) has two internal copper planes — one power and one ground. These planes are in addition to the two signal trace layers on both surfaces. This is the 4L/2P (four-layer, also referred to as 2S/2P) board. JEDEC measurements: Packages are measured in a one foot-cube enclosure based on JEDS51-2. Test boards are fashioned per test board specification JESD51-3 and JESD51-7. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 51 Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions R The board sizes depend on the package and are typically 76.2 mm x 114.3 mm x 1.6 mm or 101.6 mm x 114.3 mm x 1.6 mm. These come in low-conductivity as well as highconductivity versions. Thermal resistance data can be taken with the package mounted in a socket or with the package mounted directly on traces on the board. Socket measurements typically use the 2S/0P or low-conductivity boards. SMT devices, on the other hand, can use either board. Published data always reflect the board and mount conditions used (ref 2S/0P or 4L/2P). The board with the device under test (DUT) is mounted in the test enclosure and data is taken at the prevailing temperature and pressure conditions — between 20°C and 30°C ambient (TA). Appropriate power is used, depending on the anticipated thermal resistance of the package. Applied power, signal monitoring — including the enclosure (ambient) temperatures are noted. The junction to ambient thermal resistance is calculated as follows: θJA = (TJ – TA)/PD In the case of airflow measurement, this is done in a special airflow enclosure section of a suction-type low-velocity wind tunnel. Airflow velocities from 0–1000 linear feet per minute (LFM), i.e., 0–5.08 m/s, are used with very low turbulence. The controlling specification is JESD51-6. Airflow measurements use similar boards as θJA with air conditions noted with hot wire anemometer. Thermal Resistance: Junction-to-Board — θJB This is defined as: θJB = (TJ – TB)/PD where TB is the board temperature at steady state measured at specified location on the board. PD is the actual power in watts that produces the change in temperature. TB is monitored on a board with a 40-gauge thermocouple at specific location in the proximity of the package leads or balls. As an example, for BGA package, the thermocouple is attached to a trace midway along the side of the package with the attachment point within 1 mm of the package body. Like θJC, θJB depends on constrained flow in a preferred direction. In actual measurement or simulations the heat flow is forced to go preferably through the board by excluding other paths with insulation. The measurement conditions are not likely to be reproduced in a real application. Data Acquisition and Package Thermal Database Data for a package type is gathered for various die sizes, power levels, cooling modes (air flow and sometimes heatsink effects) with a Data Acquisition and Control System (DAS). The system controls and conditions the power supplies and other ancillary equipment for hands-free data taking. A package is completely characterized with respect to the major variables that influence the thermal resistance. A database is generated for the package. From the database, thermal resistance data is interpolated as typical values for individual Xilinx devices that are assembled in the characterized package. Figure 3-11 is a screen shot of the Package Thermal Data Query for Xilinx components. This tool is located on Xilinx.com at http://www.xilinx.com/cgi-bin/thermal/thermal.pl. Device-specific data from the thermal database can be obtained from this web site. The data from this query is specific to the devices of the individual packages. 52 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Application of Thermal Resistance Data X-Ref Target - Figure 3-11 UG112_C3_05_111208 Figure 3-11: Package Thermal Data Query for Device-Specific Data Thermal data consistent with the above query results can also be found in product-specific user guides for newer device families. Below are three examples: • UG365, Virtex-6 FPGA Packaging and Pinout Specifications • UG385, Spartan-6 FPGA Packaging and Pinouts Product Specification • UG475, 7 Series FPGAs Packaging and Pinout Advance Specification The linked query provides thermal data for all released and active Xilinx products. The supporting data table is updated periodically to include newer products and prune inactive products. Data from the Query replaces the generic package based (summarized by package type) thermal data that used to be tabulated in previous versions of this user guide. Application of Thermal Resistance Data Thermal resistance data is used to gauge the IC package thermal performance. There are several ways to express the thermal resistance between two points. The following are a few of them: • θJA = Junction to ambient thermal resistance (°C/W). • θJC = Junction to case thermal resistance (°C/W) • θJB = Junction to board thermal resistance (°C/W) • θCA = Case to ambient thermal resistance (°C/W) • θCS = Case to heatsink thermal resistance (°C/W) • θSA = Heatsink to ambient thermal resistance (°C/W) Other thermal parameters include • • ΨJC = Junction to board thermal characteristic parameter (°C/W) ΨJT = Junction to package thermal characteristic parameter (°C/W) Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 53 Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions R θJC measures the internal package resistance to heat conduction from the die surface, through the die mount material to the package exterior. θJC strongly depends on the package material’s heat conductivity and geometrical considerations. θJA measures the total package thermal resistance including θJC. θJA depends on the package material properties and such external conditions as convective efficiency and board mount conditions. For example, a package mounted on a socket can have a θJA value 20% higher than the same package mounted on a four-layer board with power and ground planes. In general, θMN expresses the thermal resistance between points M and N. In the above expression, the source and end points are indicated. In situations where a heatsink is used with a heatsink compound, thermal resistance of heatsink is referenced as θSA (sink-to-ambient) and the attached material as θCS (case-toheatsink). These thermal resistances can be added. For example, θJA = θJC + θCS + θSA is an expression used in heatsink situations with interface material resistance θCS. Thermal Data Usage Examples Note: Actual thermal resistance in a system can be impacted by several user conditions. In the examples that follow, it should be noted that unique user conditions will impact predictions and estimates. Such user conditions have not been taken into consideration in the examples. One of the main influences on thermal resistance is board conditions. Table 3-2 shows a table that illustrates how the thermal resistance of a flip-chip package (FF1148) is influenced by the board characteristics. The package with a high-conductivity JEDEC board-based measured θJAof 10.1°C/watt can exhibit almost a 50% reduction in θJA if a 10 in square board with 16 copper layers is used. Other user boundary conditions can also affect the effective thermal resistance in a system. Figure 3-4 depicts the impact when airflow is applied to packages. In general, as users work their way through these examples, external influences have not been taken into account in the estimates. The following are some data requirements for using thermal resistance in an application. • • Xilinx-supplied data: • Thermal data for θJA and θJCis available at: http://www.xilinx.com/cgi-bin/thermal/thermal.pl • Thermal data for is θSA is provided by heatsink supplier. Items that the user might need to supply: • • TJmax - This can go as high as the absolute maximum temperature for the package — typically 125°C to 135°C for plastic - Note that components are tested to meet the speed file specifications at the temperatures associated with them – 85°C for C grade, and higher I and M grades. Running the parts at a higher TJ than specified might not meet the specifications. - The user will have to pick a TJmax for reliability considerations, and plan the thermal budget around that TA: Ambient temperature in a system - • 54 This is also another variable that the user can control. Typically, this is set to approximately 45°C to 55°C. It could also be as high as 75°C or 100°C, based on the application. Items usually estimated: www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Thermal Data Usage Examples • Power dissipation. The thermal equation can be used to determine a power range that can satisfy some given conditions • Also, if power is known, TJmax can be calculated from the equations • If the temperature on the top of a bare part is well monitored in a system (not the way θJC is measured), the thermal parameter ΨJT can be used to get junction temperature • Similarly, a well monitored board temperature can be used to predict junction with the ΨJC parameter In non-heatsink situations, the following inequality formula should hold: TJmax > θJA x PD + TA The two examples below illustrate the use of the above inequality formula. Specific packages are used in the examples, but any package—Quad, BGA, FGs, or even flip-chip based BGs—are applicable. Example 1 The manufacturer’s goal is to achieve TJmax < 85°C A module is designed for a TA = 45°C max. An XCV300 in a FG456 has a θJA = 16.5°C/watt. θJC = 2.0°C/watt. Given an XCV300 with a logic design with a rated power PD of 2.0 watts. With this information, the maximum die temperature can be calculated as: TJ = 45 + (16.5 x 2.0) = 78°C. The system manufacturer’s goal of TJ < 85°C is met in this case. Example 2 A module has a TA = 55°C max. The Xilinx FPGA XCV400E is in a PQ240 package. A logic design in XCV400E is determined to be 2.70 watts. The module manufacturer’s goal is to achieve TJ (max.) < 100°C. Table 3-3 shows the package and thermal enhancement combinations required to meet the goal of TJ < 100°C. Table 3-3: Thermal Resistance for XCV400E in PQ240 Package Device Name Package θJA still air θJA (250 LFM) θJA (500 LFM) θJA (750 LFM) θJC Comments XCV400E PQ240 17.9 13.2 11.7 10.8 3.2 Cu, SMT 2L/0P For all solutions, the junction temperature is calculated as: TJ = Power x θJA + TA. All solutions meet the module requirement of less than 100°C, with the exception of the PQ240 package in still air. In general, depending on ambient and board temperatures conditions, and most importantly the total power dissipation, thermal enhancements such as forced air cooling, heat sinking, etc., might be necessary to meet the TJ (max) conditions set. Possible solutions to meet the module requirements of 100°C: Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 55 R Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions 1. Using the standard PQ240: TJ = 55 + (17.9 x 2.70) = 103.33°C. 2. Using standard PQ240 with 250 LFM forced air: TJ = 55 + (13.2 x 2.70) = 90.64°C. Heatsink Calculation Example illustrating the use of heatsink: Device is XCV1000E-FG680 There is a need for external thermal enhancements. Data supplied from Xilinx on XCV1000E-FG680 is shown in Table 3-4 Table 3-4: Data Supplied from Xilinx on XCV1000E-FG680 Package Code θJA still air θJC °C/W θJA (250 LFM) θJA (500 LFM) θJA (750 LFM) FG680 10.6 0.9 7.5 6.1 5.6 • • • • Customer requirements • Ta = 50°C • Power = 8.0 watts (user’s estimate) • User does not want to exceed TJmax of 100°C Determination with base Still Air data: • TJ = TA + (θJA) x P • TJ = 50 + 8 x 10.6 = 134.8°C • Unacceptable! θJA in still air will not work because the 134.8°C is beyond the stated goal of 100°C or less. Calculating acceptable thermal resistance: • Determine what θJA will be required to stay below 100°C with the 8 watts power? • Thermal budget = (TJ – TA) = 50°C. • θJA = (50)/8 = 6.25°C/watt. • The package and any enhancement to it need to have an effective thermal resistance from the junction to ambient less than 6.25°C/watt. That becomes the goal any thermal solution ought to meet. Solution Options: • The bare package with 500 LFM (2.54 meters/s) of air will give θJA = 6.1°C/watt. (from the data table above). That will be a workable option, if that much airflow will be tolerable. • Heatsink calculation. With a heatsink, heat will now pass through the package (θJC) then through an interface material (θCS), and from the heatsink to ambient (θSA). This can be expressed as follows: - θJA ≥ θJC + θCS + θSA - 6.25 ≥ 0.9+0.1+ θSA where 56 - 6.25°C/watt is the condition to be met - 0.9°C/watt — θJC from data www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Additional Power Management Options - 0.1°C/watt — θCS from interface material data • From above, θSA ≤ 5.25°C/watt • The objective will be to look for a heatsink with θSA < 5.25°C/watt that meets the physical constraints in the system • Passive heatsink with some air flow — 250 LFM (1.25 m/s) can be selected • Active heatsinks — it might be possible to use small low-profile heatsinks with DC fans Additional Power Management Options The variety of applications that the FPGA devices are used in makes it a challenge to anticipate the power requirements and thus the thermal management needs a particular user might have. While Xilinx programmable devices might not be the dominating power consumers in some systems, it is conceivable that high-gate-count FPGA devices will be exercised sufficiently to generate considerable heat. X-Ref Target - Figure 3-12 UG112_C3_11_111208 Figure 3-12: Enhanced BGA with Low Profile Retainer Type Passive Heatsinks In general, high-I/O and high-gate-count devices have the potential of being clocked to produce high wattage. Being aware of this potential in power needs, the package offering for these devices includes medium- and high-power-capable package options. This allows a system designer to further enhance these high-end BGA packages to handle more power. When the actual or estimated power dissipation appears to be more than the specification of the bare package, some thermal management options can be considered. The accompanying Thermal management chart illustrates the incremental nature of the recommendations — ranging from simple airflow to schemes that can include passive heatsinks and active heatsinks. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 57 R Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions X-Ref Target - Figure 3-13 Low end 1Ð6W Bare package with moderate airflow 8Ð12¡C/W. Bare package can be used with moderate airflow within a system. Mid range 4Ð10W Passive heat sink with moderate airflow 5Ð10¡C/W. Package used with various forms of passive heat sinks and heat spreader techniques. High end 8Ð25W Active heat sink 2Ð3¡C/W or better. Package used with active heat sinks TEC and board level heat spreader techniques. UG112_C3_12 _111208 Figure 3-13: Thermal Management — Incremental Options The use of heat pipes, and even liquid-cooled heat plates, can be considered in the extreme for some of these packages. Details on the engineering designs and analysis of some of these suggested considerations might require the help of thermal management consultants. The references listed at the end of this section can provide heatsink solutions for industry-standard packages. Some of the options available in thermal management can include the following: 58 • Most high-gate-count Xilinx devices come in more than two package types. Explore thermally enhanced package options available for devices. The quad packages and some BGA packages have heat enhancement options. Typically, 25% to 40% improvement in thermal performance can be expected from these heatsink-embedded packages. • In a system design, natural convection can be enhanced with venting in the system enclosure. This will effectively lower the Ta and increase available thermal budget for moderate power dissipation. • The use of forced-air fans is the next step beyond natural convection, and it can be an effective way to improve thermal performance. As seen on the graphs and the calculations above, forced air (200-300 LFM) can reduce junction-to-ambient thermal resistance by up to 30%. • For moderate power dissipation, the use of passive heatsinks and heat spreaders attached with thermally conductive double-sided tapes or retainers can offer quick solutions. • The use of lightweight finned external passive heatsinks can be effective for dissipating up to 8 watts on some packages. If implemented with forced air as well, the benefit can be a 40% to 50% reduction as illustrated in the XCV1000E-FG680 example. The more efficient external heatsinks tend to be tall and heavy. When using a bulky heatsink, it is advisable to use spring-loaded pins or clips to reduce heatsinkinduced stress on the solder joints of the component as these pins or clips help transfer the mounting stress to the circuit board. The diagonals of some of these heatsinks can be designed with extensions to allow direct connection to the board (see Figure 3-14). www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Additional Power Management Options X-Ref Target - Figure 3-14 UG112_C3_13_111208 Figure 3-14: Heatsink with Clips • Exposed metal heatsink packages: All thermally enhanced BGAs with dies facing down (including these package codes - BG352, BG432, BG560, FG680, FG860, and flip-chip BGAs) are offered with an exposed metal heatsink at the top. These are considered high-end thermal packages and they lend themselves to the application of external heatsinks (passive or active) for further heat removal efficiency. Again, precautions should be taken to prevent component damage when a bulky heatsink is attached. • Active heatsinks can include a simple heatsink incorporating a mini fan or even Peltier Thermoelectric Coolers (TECs) with a fan to carry away any heat generated. Any consideration of applying TEC in heat management should include consultation with experts in using the devices, as these devices can be reversed and this might damage components. Also, condensation can be an issue. • Molded packages (FG456, FG676, FG1156, PQs, etc.) without exposed metal at the top also can use these heatsinks at the top for further heat reduction. These BGA packages are similar in construction to those used in graphic cards in PC applications, and heatsinks used for those applications can easily be used for these packages as well. In this case, the θJC resistance will be the limiting consideration. X-Ref Target - Figure 3-15 UG112_C3_14_111208 Figure 3-15: • Example of Active Heatsink for BGA (Malico) Outside the package itself, the board on which the package sits can have a significant impact on thermal performance. Board designs can be implemented to take advantage of a board’s ability to spread heat. Heat flows to the outside of a package and is sunk into the board to be conducted away – through heatpipes or by normal convection. The effect of the board will be dependent on the size and how it conducts heat. Board size, the level of copper traces on it, and the number of buried copper planes all lower the θJA thermal resistance for a package mounted on it. Some of the heatsink packages – like HQ, with the exposed heatsink on the board side – can be glued to the board with thermal compound to enhance heat removal into the board. BGA packages with full matrix of balls can be cooled with this scheme. Users need to be aware that a direct heat path to the board from a component also exposes the component to the Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 59 Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions R effect of other heat sources, particularly if the board is not cooled effectively. An otherwise cooler component can be heated by other heat-contributing components on the board. See “Web Sites for Heatsink Sources” for lists of Web sites that offer more information on heat management and sources for interface material. System Simulation Support For more accurate in-system TJ prediction, Xilinx can provide Compact Thermal Models (CTMs) to be used in system thermal simulations. The figure of merit thermal data Xilinx provides can be used to select packages and perform comparative thermal analysis and some preliminary TJ predictions. However, when the thermal margins are very tight, or the component is integrated with other heat sources in a system, a full system thermal analysis might be required. These CTMs are provided to reduce the computational complexity. Our CTMs are based on the Delphi approach that JEDEC has proposed. Since the JEDEC neutral (XML) format proposal has not been adopted yet, the Delphi approach is used to generate these files and the data saved in the native and proprietary file formats of the targeted CFD tools, rather than follow a neutral file. We are closely following JC15-1 developments and hope to offer the neutral file format when it is ready and adopted by the CFD tool vendors. In the meantime, these CTMs are based on the Delphi (dotcomp optimization) approach for specific tools. These tools occupied the first two places in our pre-introduction customer survey. The libraries are available in Flotherm (pdml) format; V5.1 and above and Icepack (ver. 4.2 and above) format. The Virtex-4 device, and newer products are supported. CTM data can be downloaded from the Xilinx Support Download Center http://www.xilinx.com/support/download/index.htm. Models for older products can be requested from: ctm_team@xilinx.com. The plan is to support models for other CFD tools through the neutral format approach. Before the neutral file format is adopted, there might be limited support of Xilinx formatted ASCII-based file defining nodes and listing the associated resistances between notes for manual entry into various other tools that support CTM usage; requests of this type should be directed to: ctm_team@xilinx.com. References These references provide additional information to support the material in this chapter: http://www.jedec.org/standards-documents/results/jesd51 http://www.irf.com/technical-info/appnotes/an-1057.pdf http://www.aavidthermalloy.com/technical/papers/pdfs/select.pdf http://goliath.ecnext.com/coms2/gi_0199-832204/Approaches-to-thermalmanagement-enclosure.html http://www2.emersonprocess.com/siteadmincenter/PM%20DeltaV%20Documents/W hitepapers/WP_Heat_Airflow_Encl.pdf http://www.midwestequipment.com/docs/enclosureratings.pdf http://www.midwestequipment.com/docs/enclosurenemaratings.pdf 60 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R References http://www.midwestequipment.com/docs/heatdissipation.pdf Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 61 Chapter 3: Thermal Management & Thermal Characterization Methods & Conditions 62 www.xilinx.com R Device Package User Guide UG112 (v3.7) September 5, 2012 R Chapter 4 Package Electrical Characteristics Introduction As data rates increase and signal rise times become shorter, the effects of package parasitics are becoming increasingly significant as the hardware engineers model their circuits. Discontinuities that might have had minimal impact on circuit performance in past generations of components are now of paramount importance as designers strive to achieve higher performance in their systems. The IC package forms an interconnect system just like traces on a printed circuit board (PCB) or conductors in connectors. When a designer simulates the signaling performance from a driver to a receiver, all the interconnect parasitics in the path, including the package, must be considered in order to achieve simulation results that represent the entire system's performance. Current Xilinx packages are constructed with either wirebond or flip chip interconnect technology. Some components use simpler leadframe-based packages, while others use laminate-based packages with multilayer construction. The choice of package matches the performance and marketing objectives sought for the device family. In multilayer packages, innovative pin-out selections and creative design techniques are used in a codesign effort to optimize package performance and to prevent the package from being a limiting factor for the device. For these high performance FPGA packages, Xilinx also provides package models that allow the user to take package parasites into account to accurately model the component's performance prior to committing to hardware. This chapter focuses on defining certain critical concepts associated with electrical characterization of packages. It is also intended to provide relevant theoretical review of electrical issues and concepts as they relate to the characterization effort. The document provides descriptions of the methods utilized to generate the parasitic data and derive appropriate models for their use. Some data examples, ranging from simple tabulated RLC to s-parameter models, are given to illustrate the range of electrical data that are available for the packages. Terminology - Definitions and Reviews There are a number of key concepts that should be understood in order to appreciate how packages affect the signals transiting through them, as well as how package parasitics are modeled or measured in the lab. Any conductor system is characterized by some basic electrical parameters which are dependent of the physical design of the system, a package is no exception. The basic electrical parameters associated with packages are resistance, inductance, conductance, and capacitance. These are commonly referred to as RLGC parameters. The parameters will be defined in the following subsections. The section also explains several other metrics Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 63 R Chapter 4: Package Electrical Characteristics which are derived from RLGC parameter values. Finally, more advanced concepts such as s-parameters, crosstalk, and SSN will be covered. Resistance (R) Resistance is one of the basic electrical parameters that commonly defines the series loss in a conductor. Electrically, Ohm's law defines resistance as the ratio of voltage to current in a conductor: E R = --I Equation 4-1 Where: R = electrical resistance (Ω) E = voltage (V) I = current (A) Physically, resistance is defined as: ρ l⋅ R = --------A Equation 4-2 Where: R = resistance (Ω) ρ = resistivity of the conductor material l = length of conductor A = cross-sectional area of the conductor The physical equation above is valid at DC where the current flows through the whole cross sectional area of the conductor. At higher frequencies, where skin effect becomes important, the cross sectional area is decreased and consequently the resistance increases at higher frequencies. The amount that the cross sectional area is decreased is highly geometry-dependent and is also a function of the proximity of the conductor to other nearby current carrying conductors. Typically, the reported R component of the package resistances are given at DC for nets intended to operate below about 1 GHz. Higher frequency nets, such as those associated with transceivers (MGTs and GTPs), are characterized with frequency-dependent losses. These frequency-dependent losses are best determined with 2D or 3D extractor software. The skin depth (which is the depth of electric and magnetic field penetration) of a conductor is given by: ρ δ = 50μ --f 64 www.xilinx.com Equation 4-3 Device Package User Guide UG112 (v3.7) September 5, 2012 R Terminology - Definitions and Reviews Where: δ = skin depth in microns (μ) ρ = conductor resistivity (μΩ - cm) ƒ = frequency (MHz) As a point of reference, δ is about 20 microns at 10 MHz frequency if the conductor is copper. Note that δ decreases with 1 (⁄ f ) , so at a frequency of 4ƒ, the skin depth would be one half the value that it was at a frequency of ƒ. Inductance (L) Inductance is one of the fundamental properties of any electrical conductor. Any current carrying conductor is surrounded by lines of magnetic flux. These lines are circular loops which encircle the current carrying conductor. The number of loops in any instance is concentrated near the conductor with the density of the lines decreasing as the distance from the conductor increases. A basic relationship for inductance is: N L = ---I Equation 4-4 Where: L = inductance in (H) N = number of magnetic lines encircling the conductor in (Wb) I = current (A) Inductance is geometry-dependent. Whether a conductor has 1 Amp or 100 Amps flowing through it, the inductance is the same since the ratio remains constant. The presence of dielectric material near the conductor will not alter the inductance. The presence of ferro-magnetic material with permeability greater than 1 will affect the inductance. When we discuss inductance, the terms loop inductance, partial inductance, self inductance, and mutual inductance are some of the items that come up. These are explained below: • Loop inductance is the inductance of a complete current carrying loop. It is a unique value dependent on the loop geometry. The larger the area encompassed by the loop, the larger the loop inductance will be. • A partial inductance is the inductance contributed by a portion of the loop. It is not a unique value. • Self Inductance - When one refers to the inductance of a conductor the reference is usually meant to imply the self inductance. This is the ratio of lines of magnetic flux to current where the lines encircle their own conductor. • The concept of mutual inductance comes into play when one considers lines of magnetic flux generated by a current carrying conductor that also encircle (or couple to) another conductor. These lines of flux will cause a voltage to be generated into the coupled conductor. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 65 R Chapter 4: Package Electrical Characteristics Some Inductance Expressions Closed form analytical equations to calculate inductance do exist for simple geometries. In a complex system like a package, such simplified closed form expressions are hard to come by; approximations abound with varying degrees of accuracy. To accurately determine the partial inductance of conductor geometry in a package, the use of a good 2D or 3D electromagnetic extractor program is recommended. Below are some closed-form formulas that are reasonably accurate for geometries commonly found in packages. • Partial self inductance of a round wire (with ground at infinity): 2 ⋅d 3 L wire = 5 ⋅d ⋅ ln  ---------- – -- r  4 Equation 4-5 Where: Lwire = inductance (nH) d = wire length (inches) r = wire radius (inches) • Partial self inductance of a round wire over a metal plane: 2 ⋅h  L wire = 5 ⋅d ⋅ ln  -------- r  Equation 4-6 Where: Lwire = inductance (nH) d = wire length (inches) h = height of wire above the plane (inches) r = wire radius (inches) • Partial self inductance of a rectangular conductor (with ground at infinity): 2 ⋅d 1 L = 5 ⋅d ⋅ ln  ----------------- + --(w + t) 2 Equation 4-7 Where: L = inductance (nH) d = conductor length (inches) w = conductor width (inches) t = thickness of conductor (inches) • Partial self inductance of a rectangular conductor - like a trace or perhaps a leadframe lead over a metal plane: 8 h⋅ w+t L = 5 ⋅d ⋅ ln  ----------------- + -----------(w + t) 4 h⋅ 66 www.xilinx.com Equation 4-8 Device Package User Guide UG112 (v3.7) September 5, 2012 R Terminology - Definitions and Reviews Where: L = Inductance (nH) d = conductor length (inches) h = height of conductor above the plane (inches) w = conductor width (inches) t = thickness of conductor (inches) These relationships are compiled from publications by several authors(1,2,3) including Eric Bogatin, and Brian Young and Grover. Capacitance (C) The capacitance of a conductor is dependent on the area of the conductor, the distance the conductor is placed from some reference conductor and the dielectric constant of the dielectric material. An expression for simple parallel plate capacitance is commonly expressed as: ε o ⋅A C = -------------t Equation 4-9 Where: C = capacitance ε0 = permittivity of free space A = conductor area t = dielectric thickness If the dielectric material between the conductors is some material other than air or vacuum the equation is modified to include the relative dielectric constant εr as follows: ε o ⋅ε r ⋅ A C = ----------------------t Equation 4-10 Where: C = capacitance ε0 = permittivity of free space A = conductor area t = dielectric thickness εo is equal to 0.0885 pF/cm or equivalently 0.225 pF/inch. The capacitance of a conductor increases if the size of the conductor increases, the thickness of the dielectric decreases, or the dielectric constant of the dielectric material increases. While this expression is not directly applicable to the geometries of package transmission lines and planes, it does illustrate the basic relationships between capacitance and the dielectric constant, conductor area and dielectric thickness. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 67 R Chapter 4: Package Electrical Characteristics Other ways of expressing capacitance: • Capacitance is also defined as the ratio of charge to voltage that can be stored between a pair of conductors: Q C = ---V Equation 4-11 Where: C = capacitance (Farads) Q = charge (Coulombs) V = voltage (volts) • Transmission lines commonly have their capacitance specified as a per-unit-length (PUL) value such thatC total = C PUL × length: • Self capacitance is the capacitance of a conductor to ground (C1 would be the capacitance of conductor 1 to ground). Mutual capacitance is the capacitance between two conductors (C12 would be the capacitance between conductor 1 and conductor 2). Examples of closed form expressions for capacitance: For complex structure a field solver is the preferred method of determining the capacitance of a conductor, however for a couple simple structures the following equations can provide answers accurate to within about 5%. • Wire over a ground: 1 ⋅ 4 ⋅ εeff C = ---------------------2h ln  ------  r (pF/inch) Equation 4-12 ε r + 1  ε r – 1 1 ε e f f = ------------- + -------------- ---------------------------  2 2 10h Equation 4-13  1 + ---------  r  Where: εr = relative dielectric constant of the dielectric h = distance from the ground plane to the center of the wire (inches) r = is the radius of the wire (inches) • Capacitance between two parallel wires: 1 ⋅ 4 ⋅ εr C = ------------------2 s   ln  ----- ab 68 www.xilinx.com (pF/inch) Equation 4-14 Device Package User Guide UG112 (v3.7) September 5, 2012 R Terminology - Definitions and Reviews where: s = distance between wire centers a = diameter of first wire b = diameter of second wire Conductance (G) The conductance parameter (G) is related to the losses in the insulating substrate material. This is a frequency dependent parameter that scales directly with frequency. Most all substrate materials utilized in package construction have very low losses at low frequencies (less than 1 GHz). As a result, the conductance (a parallel loss) is very low and is usually ignored when modeling SelectIO™ lines. The dielectric loss does become significant at the higher frequencies where high speed nets are utilized. These lines are typically characterized by s-parameters as opposed to RLGC parameters. Impedance (Z) The impedance of a transmission line can be calculated readily if the line’s inductance and capacitance are known. The relevant equation is: L Z = ---C Equation 4-15 Where: Z = impedance in (Ω) L = the line’s per-unit-length inductance (H) C = the line’s per-unit-length capacitance (F) When circuit elements interface with each other (for example, package trace and PCB trace, or PCB trace and termination), any mismatch in their impedances at their boundaries will result in reflections. The higher the mismatched magnitude, the greater the associated reflection, hence distortion in the signal traversing the mismatched interface. For this reason, it makes sense to minimize the impedance mismatches in a system. Time Delay (Td) The time delay for transmission line (i.e., conductor) in a package is calculated by the equation [ T d = L ⋅C ] where the delay is in seconds, the capacitance is in Farads and the inductance is in Henrys. Knowledge of a line's delay contribution is needed in determining timing closure. Time delay can also be determined if one knows the relative dielectric constant εr of the substrate material associated with a transmission line. A transmission line with air as a dielectric propagates signals at the speed of light (c = 3 x 1010 cm/second) or about 5.9 inches/psec. In a material with a relative dielectric of εr the velocity of propagation is given by the expression: c v = ---------- εr Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com Equation 4-16 69 R Chapter 4: Package Electrical Characteristics Where: v = velocity in the material c = speed of light εr = relative dielectric constant of the dielectric material For example, typical FR4 material has a dielectric constant of about 4, so the velocity of propagation in a transmission line utilizing FR4 as the dielectric material will be c/2 (one half the speed of light) or 2.95 inches/psec. The time delay of a transmission line is simply the reciprocal of the velocity. In the case of FR4, the Td is about 169.5 inches/psec. Additionally, the time of flight (Tof) in a transmission line is simply the line's length times Td. This Tof number is what would be used in timing closure calculations. For large size laminate and ceramic-based packages where Td is likely to be over 50 ps, the delay data is provided. This Td is derived from the LC data if the per-pin data is available. In some cases, Td is derived directly from the trace length data of the relevant package design. Crosstalk Coupling (usually unwanted) from one conductor to another is termed “Crosstalk”. The line generating the signal is called the “aggressor” and the line into which the signal is coupled is termed the “victim.” Generally, this coupled signal is considered noise and is undesired. There are two mechanisms involved in this unwanted coupling between circuits; capacitive and inductive. Capacitive coupling occurs when the victim net is affected by the electric-field lines generated by the aggressor. Inductive coupling is caused by the magnetic-field lines generated by the aggressor inducing a voltage in the victim circuit. Physically, the two items that affect coupling are the distance between the two circuits and the length of the coupling regions. The most effective way to minimize crosstalk is to increase the spacing between the aggressor and victim nets. Crosstalk is broadly divided into “near-end” and “far-end” crosstalk. Near-end crosstalk is always positive since the currents generated by the inductive and capacitive coupling components add and sum at the near end. Far-end crosstalk can be either negative or positive. If the magnitude of the inductively coupled component is larger than the capacitive coupled component then the difference of the currents at the far end is positive, however, if the capacitive component predominates then the far end effect will be a negative voltage. Also note, that the magnitude of the near-end crosstalk is insensitive to the coupled length of the aggressor and victim nets. However, the far-end crosstalk will increase with increasing coupled length until a saturation point is reached. The exact mathematical relationships for calculating crosstalk can be complex and vary in detail depending on whether the nets are terminated or open circuited and whether near-end or far-end crosstalk are considered. The following expressions, taken from High Speed Digital System Design4, illustrate a couple of cases where both the aggressor and victim nets are terminated at both the near and far-end (quite often the case): The above reference reviews other terminated cases as well. • 70 Far-end Crosstalk C ij ij L ------ –  ------------------  L i   C i + C ij -----------------------------------------4 www.xilinx.com Equation 4-17 Device Package User Guide UG112 (v3.7) September 5, 2012 R Terminology - Definitions and Reviews • Near-end Crosstalk C ij ij L ------ +  ------------------  L i   C i + C ij ------------------------------------------2 Equation 4-18 Where: Ci and Li are the self capacitance and inductances of the victim lines, respectively. Cij and Lij are the mutual capacitances and inductances respectively between nets i and j. Ground Bounce Ground bounce is the voltage difference between any two grounds (typically between an IC and circuit board ground) induced by simultaneously switching current through bond wire, lead, or other interconnect inductance. When IC outputs change state, large current spikes result from charging or discharging the load capacitance. The larger the load capacitance and faster the rise/fall times, the larger the current spikes are: I = C * dv/dt. Current spikes through the IC pin and bondwire induce a voltage drop across the leads and bondwires: V = L * di/dt. The result is a momentary voltage difference between the internal IC ground and system ground, which show up as voltage spikes and unswitched outputs. Factors that affect ground bounce include: • rise and fall times • load capacitance • package inductance • number of output drivers sharing the same ground path • device type Signal Integrity and Package Performance Resistance, Capacitance and Inductance (defined in the “Terminology - Definitions and Reviews” section) are the three major electrical parameters used in one format or another to describe package electrical performance. These metrics are used to describe I/O, as well as power networks of the packages. The parameters, also known as interconnect parasitics, can be the source of many serious issues in digital systems. For example, a large resistance can cause RC and RL off-chip delays, power dissipation, and edge-rate degradation. Large capacitance in I/O nets can cause RC delays, crosstalk, edge-rate degradation, and signal distortion. Lead inductance, perhaps the most damaging parasitic in digital circuitry, can cause such problems as ground bounce (also known as simultaneous switching noise or delta-I noise), RL delays, crosstalk, edge-rate degradation, and signal distortion. In the design of Xilinx packages, the challenge is to seek the appropriate balance for these parameters so that signal integrity issues are minimized. Package characterization is geared to assist the package designers in a co-design effort to make the appropriate choices backed by simulation and measurements in optimizing the package design and layout for performance. A further goal of the effort is to gather the parasitics data and seek the appropriate data representation of these parameters to help end-users deploy these packages. To this end, Xilinx offers raw tabulated package parasitic data, summaries of data, and various models as part of the deliverable. Representative samples will be shown at appropriate sections. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 71 R Chapter 4: Package Electrical Characteristics The measurement and 3D extraction capability, as well as the models support, will be described in the subsequent sections. Electrical Data Generation and Measurement Methods With regards to experimental measurements, Xilinx uses both the Time-Domain Reflectometry (TDR) method for parasitic inductance and capacitance measurements, as well as frequency domain measurements performed with a 4-port Vector Network Analyzer (VNA). The practical measurement capability is augmented by a range of analytical calculators, 2D and 3D full wave FEM tools that are utilized through simulations to extract various signal integrity-based parameters about the packages. Review of Practical Measurements The main components of a TDR setup includes a digitizing sampling oscilloscope, a fast rise-time step generator (5 mils 1.0 mm 5 mils 6 mils (8.8 mils) >5 mils Signal (L1) Signal (L2) Signal Signal PWR (L3) (L4) Plane GND Plane O0.30 mm (0.012) O0.61 mm (0.024) I/O GND PWR VCCINT O0.5 mm (0.020) O0.4 mm (0.016) 1-Line/Channel 5 mils Line/ 5 mils Spacing (Standard Technology) 1-Line/Channel 6 mils Line/ 6 mils Spacing (Standard Technology) Detail "A" UG112_C5_05_111208 Figure 5-5: FG676 PC Board Layout/Land Pattern Figure 5-5 describes a board-level layout strategy for a Xilinx 1.0 mm pitch FG676 package. Detail A in Figure 5-5 describes the opening geometry for the land pad and the solder mask. Routing with 5 mils lines/trace allows one signal per channel (between the balls). For successful routing, eight row deep signal traces require six PCB layers. Figure 5-6 Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 91 R Chapter 5: Recommended PCB Design Rules shows the suggested schematic of layers for the six-layer routing scheme. Using premium board technology such as Microvia Technology (allowing up to 4 mils lines and spaces) efficient routing is possible with a reduced number of board layers. A grouping scheme for power, ground, control and I/O pins, can also enable efficient routing. X-Ref Target - Figure 5-6 Signal L-1 Power/Gnd L-2 Signal L-3 Signal L-4 Power/Gnd L-5 Signal L-6 UG112_C5_06_111208 Figure 5-6: Six-Layer Routing Scheme Board Routing Examples Figure 5-7 through Figure 5-11 offer examples of layer-by-layer board routing implementation using the rules outlined above for the Virtex®-E family of 1.0 mm BGA packages - FG256, FG456, FG676, FG900, and FG1156. The rule used assumes 5 mils lines and spaces. This is just an illustration of how the strategies outlined above can be used; it does not represent any specific implementation pin-out. Similar board layout examples can be generated for other family (Virtex-II, Virtex-II Pro, etc.) pin-outs with the rules and strategies discussed in this section. It should be noted that the need to shield high-speed signals and meet Signal Integrity constraints might disrupt the plane sequence. 92 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Board Routability Guidelines with Xilinx Fine-Pitch BGA Packages X-Ref Target - Figure 5-7 First Signal Layer Second Signal Layer Notes: 1) Solder Land Diameter 0.4 mm Nonsolder Mask Defined 2) Solder Mask Opening Diameter 0.5 mm 3) Via Diameter 0.3 mm on 0.61 mm Diameter Via Land 4) Trace Width 0.127 mm UG112_c5_07 _040809 Figure 5-7: Device Package User Guide UG112 (v3.7) September 5, 2012 XCV300E - FG256 NSMD Land Pad www.xilinx.com 93 R Chapter 5: Recommended PCB Design Rules X-Ref Target - Figure 5-8 First Signal Layer Second Signal Layer Third Signal Layer Notes: 1) Solder Land Diameter 0.4 mm Nonsolder Mask Defined 2) Solder Mask Opening 0.5 mm Diameter 3) Via Diameter 0.3 mm on 0.61 mm Diameter Via Land 4) All Layers Trace Width 0.127 mm UG112_c5_08 _040809 Figure 5-8: 94 XCV300E - FG456 NSMD Land Pad www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Board Routability Guidelines with Xilinx Fine-Pitch BGA Packages X-Ref Target - Figure 5-9 Top Signal Layer Second Signal Layer Third Signal Layer Fourth Signal Layer Notes: 1) Solder Land Diameter 0.4 mm Nonsolder Mask Defined 2) Solder Mask Opening Diameter 0.5 mm 3) Via Diameter 0.3 mm on 0.61 mm Diameter Via Land 4) Trace Width 0.127 mm UG112_c5_09 _040809 Figure 5-9: Device Package User Guide UG112 (v3.7) September 5, 2012 XCV800 - FG676 NSMD Land Pad www.xilinx.com 95 R Chapter 5: Recommended PCB Design Rules X-Ref Target - Figure 5-10 Top Signal Layer Second Signal Layer Third Signal Layer Fourth Signal Layer Fifth Signal Layer Sixth Signal Layer Notes: 1) Solder Land Diameter 0.4 mm Nonsolder Mask Defined 2) Solder Mask Opening Diameter 0.5 mm 3) Via Diameter 0.3 mm on 0.61 mm Diameter Via Land 4) Trace Width 0.127 mm UG112_C5_10 _111208 Figure 5-10: 96 XCV1600E - FG900 NSMD Solder Land Pad Layout www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Board Routability Guidelines with Xilinx Fine-Pitch BGA Packages X-Ref Target - Figure 5-11 Top Signal Layer Second Signal Layer Third Signal Layer Fourth Signal Layer Fifth Signal Layer Sixth Signal Layer Notes: 1) Solder Land Diameter 0.4 mm Nonsolder Mask Defined 2) Solder Mask Opening Diameter 0.5 mm 3) Via Diameter 0.3 mm on 0.61 mm Diameter Via Land 4) All layers, Trace Width 0.127 mm UG112_C5_11 _111208 Figure 5-11: Device Package User Guide UG112 (v3.7) September 5, 2012 XCV2000E - FG1156 NSMD Solder Land Pad Layout www.xilinx.com 97 R Chapter 5: Recommended PCB Design Rules Recommended PCB Design Rules for QFN Packages X-Ref Target - Figure 5-12 Zmax D2’ CLL CPL Gmin Y Amax D2’ Zmax X Amax Gmin UG112_C5_12 _111208 Figure 5-12: Table 5-6: IPC Standard Board Layout of Soldered Pads for QFN Packages Recommended PCB Land Pattern Dimensions (mm) Package PCB Land Pattern Dimensions Package Body Size Lead Pitch Xmax Yref Amax Gmin Zmax D2max CLL(1) CPL(2) QFG32 5x5 0.50 0.28 0.69 3.78 3.93 5.31 3.63 0.10 0.15 QFG48 7x7 0.50 0.28 0.69 5.78 5.93 7.31 5.63 0.10 0.15 1. CLL defines the minimum distance between land to land for the corner joints on adjacent sides. 2. CPL defines the minimum distance between the inner tip of the peripheral lands and the outer edge of the thermal pad. PCB Pad Pattern Design and Surface-Mount Considerations for QFN Packages Xilinx Quad Flat No-Lead (QFN) package is a robust and low profile leadframe-based plastic package that has several advantages over traditional leadframe packages.The exposed die attach paddle enables efficient thermal dissipation when directly soldered to the PCB. Additionally, this near chip scale package offers improved electrical performance, smaller package size, and an absence of external leads. Since the package has no external leads, coplanarity and bent leads are no longer a concern. The exposed pads at the bottom of a QFN package can be used to enhance both electrical and thermal performance of the QFN component. To implement this, note that the exposed pad is a weak ground through its connection to the silicon. Under no circumstances should 98 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Recommended PCB Design Rules for QFN Packages the pad be connected to a positive or negative voltage. The paddle should only be left floating or connected to corresponding ground pad on the board. Ground pads incorporating thermal vias in them will significantly improve thermal performance, as shown in Figure 5-14. The following factors have major effect on the quality and reliability of assembling QFN packages: PCB pad pattern design, amount of solder paste in thermal pad region, stencil design, type of solder paste, and reflow profile. This application note provides a good guideline on PCB pad pattern design and assembling of QFN packages for optimal reliability and quality. This is only a guideline and users are encouraged to perform actual studies to optimize the process. PCB Pad Patterns Figure 5-13 shows the PCB pad pattern dimensions to be determined. The dimension X and Y indicate the width and length of the pad. CLL and CPL define the clearances needed to avoid solder bridging. CLL defines the minimum distance between land to land for the corner joints on adjacent sides and CPL defines the minimum distance between the inner tip of the peripheral lands and the outer edge of the thermal pad. CLL should be 0.1 mm and CPL should be 0.15 mm. X-Ref Target - Figure 5-13 Zmax D2’ CLL CPL Gmin Y Amax D2’ Zmax X Amax Gmin UG112_C5_12 _111208 Figure 5-13: Device Package User Guide UG112 (v3.7) September 5, 2012 PCB Land Pattern Dimensions www.xilinx.com 99 R Chapter 5: Recommended PCB Design Rules Tolerance analysis should be performed on the package and the PCB dimensions in order to design a proper pad pattern. The recommended PCB land pattern dimensions are shown in Table 5-6. Table 5-7: Recommended PCB Land Pattern Dimensions (all dimensions in mm) Package Package PCB Land Pattern Dimensions Body Size Lead Pitch Xmax Yref Amax Gmin Zmax D2max QFG32 5x5 0.50 0.28 0.69 3.78 3.93 5.31 3.63 QFG48 7x7 0.50 0.28 0.69 5.78 5.93 7.31 5.63 Thermal Pad and Via Design Typical deployment of a QFN package has a thermal resistance (θja) of 35 – 45o C/watt (depending on package size). When needed, the base performance can be improved and a lower overall θja is achieved by taking advantage of the exposed thermal pad feature. To take advantage of the exposed thermal pad under the package, the PCB should incorporate thermal pad and thermal vias. The thermal pad on the PCB acts as a solderable surface and the thermal vias provide a thermal path to the inner and/or bottom layers of the PCB to remove the heat. The number of thermal vias will depend on the following: application, power dissipation and electrical requirements. The thermal performance gets better as more thermal vias are added. However, there is a point of diminishing returns as shown in Figure 5-14 where the effect of number of vias on θja is plotted for a 7 mm, 48-lead package. A via diameter of 0.3 mm was used for this simulation. X-Ref Target - Figure 5-14 30 ThetaJA (C/W) 29 28 27 26 25 24 4 2x2 2.4 9 3x3 1.8 16 4x4 1.2 36 6x6 0.9 # of Vias Matrix Pitch (mm) UG112_C5_14 _111208 Figure 5-14: θJA vs. Number of Vias Graph Based on the above and similar thermal simulations, it is recommended to incorporate an array of thermal vias that have pitch of 1.0 to 1.2 mm with via diameter of 0.3 to 0.33 mm. Solder Masking Considerations The PCB have pads that are either solder mask defined (SMD) or non solder mask defined (NSMD). NSMD pads are preferred over SMD pads since the copper etching process has tighter control than the solder masking process. Furthermore, NSMD pads with solder 100 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Recommended PCB Design Rules for QFN Packages mask opening larger than the metal pad size improves the reliability of the solder joints as solder is allowed to wrap around the sides of metal pads. The solder mask opening should be larger than the pad size by 120 to 150 microns. This results in a clearance of 60 – 75 microns between the copper pad and the solder mask. The thermal pad area can be solder mask defined in order to avoid any solder bridging between the thermal pad and the perimeter pads. The mask opening should be 100 microns smaller than the thermal land size on all four sides. Stencil Design for Perimeter Pads To achieve reliable solder joints, the solder joints on the perimeter pads should have about 50 to 75 microns standoff height and good side fillet on the outside. Good stand off can be achieved by having a stencil aperture opening that allows for maximum paste release. This is accomplished by having an area ratio that is greater than 0.66 and an aspect ratio that is greater than 1.5. Area Ratio and Aspect Ratio is defined below: Area Ratio = LW/2T(L+W) Aspect Ratio = W/T Where L and W are the aperture length and width, and T is the stencil thickness. The stencil aperture should have a 1:1 ratio with the PCB pad sizes as both area and aspect ratio targets can easily be achieved by this aperture. Also, the stencil should be laser cut and electro-polished. Stencil Design for Thermal Pad To enhance thermal and electrical performance, the die paddle should be soldered to the PCB thermal pad (see “PCB Pad Pattern Design and Surface-Mount Considerations for QFN Packages,” page 98). Since outgassing occurs during reflow process and might cause defects such as splatter and solder balling, care must be taken to avoid large solder paste coverage. Thus, it is recommended to use smaller multiple openings in the stencil instead of one big opening for printing solder paste on the thermal pad area. By doing this, 50 to 80% solder paste coverage can be achieved. Figure 5-15 below shows one way to achieve these levels of solder paste coverage. Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 101 R Chapter 5: Recommended PCB Design Rules X-Ref Target - Figure 5-15 1.35 x 1.35 mm Squares @ 1.65 mm Pitch Coverage: 68% UG112_C5_15 _111208 Figure 5-15: Thermal Pad Stencil Design Via Types and Solder Voiding Voids in the thermal pad region are not expected to degrade thermal and electrical performance. However, large voids in the thermal pad area should be avoided. To control these voids, solder masking might be required for thermal vias to prevent solder wicking inside the via during reflow. Methods commonly used in the industry to control the voids include “via tenting” (top or bottom side) using dry film solder mask, “via plugging” with liquid photo-imageable (LPI) solder mask from the bottom side, or “via encroaching”. Figure 5-16 shows these options. For via tenting, the solder mask diameter should be 100 microns larger than the diameter of the via. X-Ref Target - Figure 5-16 (a) (b) (c) (d) UG112_C5_16_111208 Figure 5-16: Solder Mask Options for Thermal Vias: (a) Via Tenting from Top, (b) Via Tenting from Bottom, (c) Via Plugging from Bottom, and (d) Via Encroached from Bottom. There are advantages/disadvantages to each of these options. Via tenting from the top side might result in smaller voids, but the presence of the solder mask on the top side of the board can hinder proper paste printing. Via tenting from the bottom and via plugging from the bottom might result in larger voids because of outgassing. Finally, encroached vias allow the solder to wick inside the vias and reduce the size of the voids. This option, however, results in lower standoff of the package. 102 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Recommended PCB Design Rules for QFN Packages Stencil Thickness and Solder Paste For 0.5 mm pitch parts, a stencil thickness of 0.125 mm is recommended. Also, to improve the paste release, a stainless steel stencil with electro-polished trapezoidal walls is recommended. For the paste, it is recommended to use “No Clean”, Type 3 paste. Since the pads on the package are plated with 100% matte Sn, the package can be soldered using either Pb-free or SnPb solder paste. References Application Notes for Surface Mount Assembly of Amkor’s MicroLeadFrame (MLF) Packages, Amkor Technology, www.amkor.com Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 103 R Chapter 5: Recommended PCB Design Rules 104 www.xilinx.com Device Package User Guide UG112 (v3.7) September 5, 2012 R Chapter 6 Moisture Sensitivity of PSMCs Moisture-Induced Cracking During Solder Reflow The surface mount reflow processing step subjects the Plastic Surface Mount Components (PSMC) to high thermal exposure and chemicals from solder fluxes and cleaning fluids during board mount assembly. The plastic mold compounds used for device encapsulation are, universally, hygroscopic and absorb moisture at a level determined by storage environment and other factors. Entrapped moisture can vaporize during rapid heating in the solder reflow process generating internal hydrostatic pressure. Additional stress is added due to thermal mismatch, and the Thermal Coefficient of Expansion (TCE) of plastic, metal lead frame, and silicon die. The resultant pressure might be sufficient to cause delamination within the package, or worse, an internal or external crack in the plastic package. Cracks in the plastic package can allow high moisture penetration, inducing transport of ionic contaminants to the die surface and increasing the potential for early device failure. Cracks in the plastic package can also result in broken/lifted bond wires. How the effects of moisture in plastic packages and the critical moisture content result in package damage or failure is a complex function of several variables. Among them are package construction details—materials, design, geometry, die size, encapsulant thickness, encapsulant properties, TCE, and the amount of moisture absorbed. The PSMC moisture sensitivity has, in addition to package cracking, been identified as a contributor to delamination-related package failure artifacts. These package failure artifacts include bond lifting and breaking, wire neckdown, bond cratering, die attach separation, and die passivation/metal breakage. Because of the importance of the PSMC moisture sensitivity, both device suppliers and device users have ownership and responsibility. The background for present conditions, moisture sensitivity standardized test and handling procedures are published by two national organizations. Users and suppliers are urged to obtain copies of both documents (listed below) and use them rigorously. Xilinx adheres to both. • IPC/JEDEC J-STD-020C “Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices.” Available on www.jedec.org website. • IPC/JEDEC J-STD-033A “Standard for Handling, Packing, Shipping, and Use of Moisture/Reflow Sensitive Surface Mount Devices.” Available on www.jedec.org website. None of the previously stated or following recommendations apply to parts in a socketed application. For board mounted parts careful handling by the supplier and the user is vital. Each of the above publications has addressed the sensitivity issue and has established eight levels of sensitivity (based on the variables identified). A replication of those listings, including the preconditioning and test requirements, and Device Package User Guide UG112 (v3.7) September 5, 2012 www.xilinx.com 105 R Chapter 6: Moisture Sensitivity of PSMCs the factory floor life conditions for each level are outlined in Table 6-1. Xilinx devices are characterized to their proper level as listed. This information is conveyed to the user via special labeling on the Moisture Barrier Bag (MBB). The moisture sensitivity level number, found in Table 6-1, is printed on the MBB prior to shipment. This establishes the user's factory floor life conditions as listed in the time column. The soak requirement is the test limit used by Xilinx to determine the level number. This time includes manufacturer's exposure time or the time it will take for Xilinx to bag the product after baking. Table 6-1: Package Moisture Sensitivity Levels Soak Requirements(1) Floor Life Standard Level Time Conditions Time (hours) Conditions 1 Unlimited
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