1N4148

1N4148 Switching Diode Features *Fast switching speed *General purpose rectification *Sillicon epitaxial planar construction DO-35 Mechanical Data *Cases:DO-35 *Lead:Solderable per MIL- STD-202, Method 208 *Polarity:Cathode band *Marking:Type number *Weight:0.13 grams (approx.) 0.51 25.4 4.0 25.4 2.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. o Maximun Ratings Type Number Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Block Voltage RMS Reverse Voltage Average Rectifier Output Current Non-Repetitive Peak Forward Surge Current @t=10ms Power Dissipation (Note 1)at Tamb=25 C Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Range o Symbol VRM VRRM VRWM VR VR(RMS) IO IFSM Pd R*JA TJ,TSTG 1N4148 100 75 53 150 500 500 350 -65 to +175 Units V V V mA mA mW K/W 0 C Electrical Characteristics Type Number Forward Voltage Peak Reverse Current @IF=10mA Symbol VF Min - Max 1.0 5.0 50 30 25 4.0 4.0 Units V uA uA uA nA pF nS trr NOTES: 1. Reverse Recovery Test Conditions:IF=10mA to IR=1.0mA VR=6.0V,RLl=100* VR=75V o VR=70V,Tj=150oC VR=20V,Tj=150 C VR=20V Capacitance VR=0,f=1.0MHz Reverse Recovery Time (Note 1) IR Cj - RATING AND CHARACTERISTIC CURVES 1N4148 FIG.1-FORWARD CHARACTERISTICS CURVE 1000 1000 FIG.1-FORWARD CHARACTERISTICS CURVE Ir,INSTANTANEOUS FORWARD CURRENT.(mA) 100 Ir,INSTANTANEOUS FORWARD CURRENT.(mA) 1000 10 100 1.0 10 0.1 VR=20V 1 0.01 0 1 VF,INSTANTANEOUS FORWARD VOLTAGE.(V) 2 0 100 Tj,JUNCTION TEMPERATURE( C) 0 200 mW 1000 90 80 700 Ptot 600 500 400 300 200 100 0 FIG.3-ADMISSIBLE POWER DISSIPATION VS AMBIENT TEMPERATURE 0 100 Tamb 200 C 0