2N7002

RoHS COMPLIANT 2N7002 N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 60V 340mA ＜2.5ohm ＜3.0ohm General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V TA=25℃ @ Steady State Drain Current 340 ID TA=70℃ @ Steady State Unit mA 272 Pulsed Drain Current A IDM 1.5 A Total Power Dissipation @ TA=25℃ PD 350 mW RθJA 357 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 2N7002 F2 7002. 3000 30000 120000 7“ reel 1/6 S-S1631 Rev.2.0,25-Dec-18 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002 ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA IGSS1 VGS= ±20V, VDS=0V ±100 nA IGSS2 VGS= ±10V, VDS=0V ±50 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.5 2.5 V VGS= 10V, ID=-300mA 1.2 2.5 Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=200mA 1.3 3.0 Static Parameter V Gate-Body Leakage Current Diode Forward Voltage Maximum Body-Diode Continuous Current 1 Ω VSD IS=300mA,VGS=0V IS 1.2 V 340 mA Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 16 VDS=30V,VGS=0V,f=1MHZ 10 pF 5.5 Switching Parameters Total Gate Charge Turn-on Delay Time Qg VGS=10V,VDS=30V,ID=0.3A tD(on) 1.7 Reverse recovery Time tD(off) trr nC 5 VGS=10V,VDD=30V, ID=300mA, RGEN=6Ω Turn-off Delay Time 2.4 ns 17 VGS=0V,IS=300mA,VR=25V, dIS/dt=100A/μs 30 ns A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. 2/6 S-S1631 Rev.2.0,25-Dec-18 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002 ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance Figure6. Drain-Source on Resistance 3/6 S-S1631 Rev.2.0,25-Dec-18 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002 Figure7. Safe Operation Area Figure8. Switching wave 4/6 S-S1631 Rev.2.0,25-Dec-18 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002 ■ SOT-23 Package information ■SOT-23 Suggested Pad Layout 5/6 S-S1631 Rev.2.0,25-Dec-18 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002 Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 6/6 S-S1631 Rev.2.0,25-Dec-18 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com