2N7002DW

厂商：
YANGJIE(扬杰科技)
封装：
SOT-363
描述：
类型：2个N沟道漏源电压(Vdss)：60V 连续漏极电流(Id)：340mA 功率(Pd)：350mW

数据手册：

下载2N7002DW.pdf

立即购买

数据手册
价格&库存

2N7002DW 数据手册

RoHS 2N7002DW COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) 60V 340mA ＜2.5ohm ＜3.0ohm General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±30 V Peak Gate-source Voltage Tp

下载 PDF

2N7002DW 价格&库存

-> 查询更多价格&库存

很抱歉，暂时无法提供与“2N7002DW”相匹配的价格&库存，您可以联系我们找货

免费人工找货