RoHS
2N7002DW
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
60V
340mA
＜2.5ohm
＜3.0ohm
General Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage
Applications
● Battery operated systems
● Solid-state relays
● Direct logic-level interface：TTL/CMOS
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-source Voltage
VDS
60
V
Gate-source Voltage
VGS
±30
V
Peak Gate-source Voltage Tp
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