2N7002KDHQ

RoHS 2N7002KDHQ COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) ＜2.0ohm ● RDS(ON)( at VGS=4.5V) ＜2.5ohm ● ESD protected up to 2.0KV (HBM) General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage ● Part no. with suffix “Q” means AEC-Q101 qualified Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS ● 12V, 24V Automotive systems ■ Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V ID 300 mA IDM 1.5 A PD 520 mW RθJA 285 ℃/ W TJ ,TSTG -55～+175 ℃ Drain Current @ T A=25℃ Pulsed Drain Current A Total Power Dissipation @ T A=25℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range Unit ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE 2N7002KDHQ F2 72KD. 3000 30000 120000 7“ reel 1/7 S-S5087 Rev.1.0,13-May-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002KDHQ ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,V GS=0V 1 μA Gate-Body Leakage Current IGSS VGS= ±20V, VDS =0V ±10 μA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.5 2.4 V 1.1 2.0 Static Drain-Source On-Resistance RDS(ON) Static Parameter VGS= 10V, ID=300mA 1.1 V Ω VGS= 4.5V, ID=200mA 1.3 2.5 1.2 Diode Forward Voltage VSD IS=115mA,VGS=0V 0.9 Gate resistance RG f=1MHz 150 V Ω Dynamic Parameters Input Capacitance Ciss 25 Output Capacitance Coss Reverse Transfer Capacitance Crss 4 Total Gate Charge Qg 1.75 Gate Source Charge Qgs Gate Drain Charge Qgd Reverse Recovery Charge Qrr VDS=25V,V GS=0V,f=1MHZ pF 8 Switching Parameters VGS=10V,VDS=30V,ID=1A 1.00 nC 0.25 3.9 nC trr 15 ns Turn-on Delay Time tD(on) 4.6 Turn-on Rise Time tr Turn-off Delay Time tD(off) ISD=1A,di/dt=100A/us Reverse Recovery Time Turn-off Fall Time VGS=10V,VDS=30V, ID=1A, Rg=3Ω tf 20.0 ns 10.5 25.5 A. Repetitive rating; pulse width limited by max. junction temperature. B. The value of RθJA is measured with the device mounted on the minimum recommend pad size, in the still air environment with T A =25℃. The maximum allowed junction temperature of 175℃. The value in any given application depends on the user's specific board design. 2/7 S-S5087 Rev.1.0,13-May-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002KDHQ ■ Typical Performance Characteristics 1.5 VDS=5V 4.5V 1 ID-Drain Current (A) ID-Drain Current (A) 2 Tj=25℃ VGS= 10V 8.5V 6.5V 4V 3.5V 0.5 Tj=175℃ Tj=25℃ 1 3V 2.5V 0 0 0 1 2 3 4 0.0 5 2.0 4.0 Figure1. Output Characteristics 10.0 Figure2. Transfer Characteristics 100 10 VGS-Gate to Source Voltage (V) Tj=25℃ Ciss C-Capacitance (pF) 8.0 VGS-Gate to Source Voltage (V) VDS-Drain to Source Voltage (V) 10 Coss Crss 1 VDS=30V ID=1A Tj=25℃ 8 6 4 2 0 0 20 40 60 0 1 VDS-Drain to Source Voltage (V) 2 Qg-Total Gate Charge (nC) Figure3. Capacitance Characteristics Figure4. Gate Charge 2.5 RDS(on)-Drain to Source Resistance Normalized 5 RDS(on) -Drain to Source resistance (Ω) 6.0 4 3 2 1 ID=0.3A Tj=25℃ VGS=10V ID=0.3A 2 1.5 1 0.5 0 2 3 4 5 6 7 8 9 10 -75 -25 25 75 125 175 Tj-Junction Temperature (℃) VGS-Gate to Source Voltage (V) Figure5. On-Resistance vs Gate to Source Voltage Figure6. Normalized On-Resistance 3/7 S-S5087 Rev.1.0,13-May-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002KDHQ 4 Is-Reverse Drain Current (A) RDS(on) -Drain to Source resistance (Ω) 5 3 VGS=4.5V 2 VGS=10V 1 1 Tj=25℃ 0 0.1 0 0.5 1 1.5 0.0 2 1.0 Figure 7. RDS(on) VS Drain Current 1.4 ID=250uA 1.2 1.1 VGS(th)-Threshold Voltage Normalized BVDSS-MAX Drain to Source Voltage Normalized ID=250uA 1.05 1 0.95 0.9 1 0.8 0.6 0.4 0.2 -75 -25 25 75 125 175 -75 -25 25 75 125 175 Tj-Junction Temperature (℃) Tj-Junction Temperature (℃) Figure 9. Normalized breakdown voltage Figure 10. Normalized Threshold voltage 10 100 0 ID-Drain-Source Current (A) D=0.5 D=0.3 D=0.1 D=0.05 10 3.0 Figure 8. Forward characteristics of reverse diode 1.15 100 2.0 VSD- Source to Drain Voltage (V) ID-Drain Current (A) Zth( J-A)-Thermal Resistance (℃/W) Tj=25℃ Tj=175℃ D=0.02 D=0.01 1 Single Pulse 0.1 0.0000 01 0.0001 0.01 1 1 300us Operation in this area is limited by RDS(ON) 10ms 1ms 0.1 DC 0.01 TJ(max)=175℃ TA =25℃ Single Pulse 0.001 100 0.1 Square Wave Pulse Durtion(S) 1 10 100 VDS-Drain to Source Voltage (V) Figure 11. Maximum Transient Thermal Impedance Figure 12. Safe Operation Area 4/7 S-S5087 Rev.1.0,13-May-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002KDHQ ■ Test Circuits & Waveforms D R1 VGS VGS (V) Qg R2 G 10V S C1 VDD D R3 VGS(pl) DUT G IG Qgd Qgs S Charge (C) Figure A. Gate Charge Test Circuit & Waveform VDS 90% L 90% 90% D DUT C1 C2 VDD Vds Rg G S R shunt Vgs VR 10% 10% 10% VGS tD(on) tf tD(off) tr Id=VR/R shunt t(off) t(on) Figure B. Resistive Switching Test Circuit & Waveform D Rg ISD G S D C1 C2 VDD trr DUT G S R shunt VR 25%IRRM Qrr L IRRM Figure C. Diode Recovery Test Circuit & Waveform 5/7 S-S5087 Rev.1.0,13-May-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002KDHQ ■ SOT-23 Package Outline Dimensions θ TOP VIEW SIDE VIEW θ SIDE VIEW UNIT：mm SUGGESTED SOLDER PAD LAYOUT NOTE: 1.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. 2.TOLERANCE 0.1mm UNLESS OTHERWISE SPECIFIED. 3.THE PAD LAYOUT IS FOR REFERENCE PURPOSES ONLY. ■ Marking Information 72KD• Note: 1. All marking is at middle of the product body 2. All marking is in laser marking 3. 72KD is Marking Code 4. Body color: Black 6/7 S-S5087 Rev.1.0,13-May-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com 2N7002KDHQ Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with automotive electronics are not designed for use in medical, life-saving, lifesustaining,or military,Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such imp roper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-S5087 Rev.1.0,13-May-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com