BSS84Q

RoHS BSS84Q COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) -60V -0.25A ＜3.6 ohm ＜4.5 ohm General Description ● Trench Power LV MOSFET technology ● Low RDS(ON) ● Low Gate Charge ● Moisture Sensitivity Level 1 ● Epoxy Meets UL 94 V-0 Flammability Rating ● Halogen Free ● Part no. with suffix “Q” means AEC-Q101 qualified Applications ● Video monitor ● Power management ● 12V Automotive systems ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-source Voltage VDS -60 V Gate-source Voltage VGS ±20 V TA=25℃ @ Steady State Unit -0.25 ID Drain Current A TA=100℃ @ Steady State -0.17 Pulsed Drain Current A IDM -0.8 A 0.6 TA=25℃ Total Power Dissipation B PD W 0.3 TA=100℃ Thermal Resistance Junction-to-Ambient B RθJA 250 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+175 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE BSS84Q F2 B84. 3000 30000 120000 7“ reel 1/7 S-S5573 Rev.1.0, 27-Nov-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84Q ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -60 Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -1.4 -2.5 V 2.8 3.6 Static Drain-Source On-Resistance RDS(ON) Static Parameter -0.9 VGS= -10V, ID=-0.15A V Ω VGS= -4.5V, ID=-0.15A Diode Forward Voltage VSD IS=-0.15A,VGS=0V Gate resistance RG f=1MHz Maximum Body-Diode Continuous Current IS 3.2 - 48 4.5 -1.2 V - Ω -0.25 A Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 26 VDS=-25V,VGS=0V,f=1MHZ 4 pF 2 Switching Parameters - 1.46 - 0.27 - 0.21 - 10 trr - 20 Turn-on Delay Time tD(on) - 2.3 Turn-on Rise Time tr - 16 Turn-off Delay Time tD(off) - 11 - 28 Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Reverse Recovery Charge Qrr VGS=-10V, VDS=-30V, ID=-0.25A nC IF=-0.25A, di/dt=100A/us Reverse Recovery Time Turn-off Fall Time VGS=-10V, VDD=-30V, ID=-0.25A RGEN=3Ω tf ns A. Pulse Test: Pulse Width≤10us,Duty cycle ≤2%. B. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25℃. The maximum allowed junction temperature of 175℃. The value in any given application depends on the user's specific board design. 2/7 S-S5573 Rev.1.0, 27-Nov-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84Q ■ Typical Performance Characteristics 0.8 -ID-Drain Current (A) 1.2 Tj= 25℃ VGS= -10V -9V -8V -7V -6V -5V 0.6 VDS=-5V VGS=-4.5V VGS=-4V VGS=-3.5V 0.4 VGS=-3V 0.2 0.8 0.6 0.2 VGS=-2.5V 1 2 3 4 Tj=175℃ 0.4 0 0 0 Tj=25℃ 1 -ID-Drain Current (A) 1 0 5 1 2 Figure 1. Output Characteristics -VGS-Gate to Source Voltage (V) C-Capacitance (pF) 10 Ciss 10 Coss Crss Tj= 25℃ 0 20 40 7 8 9 10 6 4 2 0 60 0 0.5 1 1.5 Qg-Total Gate Charge (nC) Figure 4. Gate Charge 10 2.5 RDS(on)-Drain to Source Resistance Normalized RDS(on)-Drain to Source resistance (Ω) 6 Tj= 25℃ 8 Figure 3. Capacitance Characteristics 8 6 4 ID= -0.25A Tj= 25℃ 2 5 VDS= -30V ID= -0.25A -VDS-Drain to Source Voltage (V) 2 4 Figure 2. Transfer Characteristics 100 1 3 -VGS-Gate to Source Voltage (V) -VDS-Drain to Source Voltage (V) VGS=-10V ID=-0.25A 2 1.5 1 0.5 4 6 8 -75 10 -25 25 75 125 175 Tj-Junction Temperature (℃) -VGS-Gate to Source Voltage (V) Figure 5. On-Resistance vs Gate to Source Voltage Figure 6. Normalized On-Resistance 3/7 S-S5573 Rev.1.0, 27-Nov-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84Q 1 Tj= 25℃ -Is-Reverse Drain Current (A) RDS(on) -Drain to Source resistance (Ω) 15 10 VGS=-4.5V 5 VGS= -10V Tj=25℃ Tj=175℃ 0.1 0 0 0.2 0.4 0.6 0.8 0.6 1 0.7 Figure 7. RDS(on) VS Drain Current BVDSS-MAX Drain to Source Voltage Normalized 1.1 0.8 0.9 1 1.1 -Vsd- Source to Drain Voltage (V) -ID-Drain Current (A) Figure 8. Forward characteristics of reverse diode 1.4 ID=-250uA ID=-250uA VGS(th)-Threshold Voltage Normalized 1.2 1.05 1 0.95 0.9 -75 -25 25 75 125 1 0.8 0.6 0.4 0.2 175 -75 -25 Tj-Junction Temperature (℃) 25 75 125 175 Tj-Junction Temperature (℃) Figure 9. Normalized breakdown voltage Figure 10. Normalized Threshold voltage 0.7 0.3 Ptot-Power Dissipation (W) -ID-Drain Current (A) 0.6 0.2 0.1 0 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 200 0 Ta-Ambient Temperature (℃) 50 100 150 200 Ta-Ambient Temperature (℃) Figure 11. Current dissipation Figure 12. Power dissipation 4/7 S-S5573 Rev.1.0, 27-Nov-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84Q 1 100 Operation in this area is limited by RDS(ON) D=0.5 D=0.3 -ID-Drain-Source Current (A) Zth(J-A)-Thermal Resistance (℃/W) 1000 D=0.1 10 D=0.05 D=0.02 D=0.01 1 0.1 Single Pulse 300us 0.1 1ms 10ms 0.01 DC TJ(max)=175℃ TA=25℃ 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 0.001 1000 Single Pulse 0.1 Square Wave Pulse Durtion(S) 1 10 100 -VDS-Drain to Source Voltage (V) Figure 13. Maximum Transient Thermal Impedance Figure 14. Safe Operation Area 5/7 S-S5573 Rev.1.0, 27-Nov-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84Q ■ SOT-23 Package information θ TOP VIEW SIDE VIEW θ SIDE VIEW UNIT：mm SUGGESTED SOLDER PAD LAYOUT NOTE: 1.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. 2.TOLERANCE 0.1mm UNLESS OTHERWISE SPECIFIED. 3.THE PAD LAYOUT IS FOR REFERENCE PURPOSES ONLY. 6/7 S-S5573 Rev.1.0, 27-Nov-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84Q Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with automotive electronics，are not designed for use in medical, lifesaving, lifesustaining,or military,Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting fro m such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 7/7 S-S5573 Rev.1.0, 27-Nov-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com