BSS84W

RoHS BSS84W COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) -60 V -0.17 A ＜8 ohm ＜9.9 ohm General Description ● Trench Power LV MOSFET technology ● Low RDS(ON) ● Low Gate Charge Applications ● Video monitor ● Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-source Voltage VDS -60 V Gate-source Voltage VGS ±20 V TA=25℃ @ Steady State Drain Current -0.17 ID TA=70℃ @ Steady State Unit A -0.14 Pulsed Drain Current A IDM 0.68 A Total Power Dissipation @ TA=25℃ PD 0.15 W Thermal Resistance Junction-to-Ambient B RθJA 833 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE BSS84W F2 B84. 3000 30000 120000 7“ reel 1/5 S-E085 Rev3.0,25-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84W ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -60 Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V -1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -1.4 -2.0 V 3.3 8 Static Drain-Source On-Resistance RDS(ON) Static Parameter Gate-Body Leakage Current -0.9 VGS= -10V, ID=-0.15A Ω VGS= -4.5V, ID=-0.15A Diode Forward Voltage VSD Maximum Body-Diode Continuous Current V 3.5 IS=-0.17A,VGS=0V IS 9.9 -1.2 V -0.17 A Dynamic Parameters Input Capacitance Ciss 43 Output Capacitance Coss Reverse Transfer Capacitance Crss 1.8 Total Gate Charge Qg 1.77 Gate Source Charge Qgs VDS=-30V,VGS=0V,f=1MHZ 2.9 pF Switching Parameters VGS=-10V,VDS=-30V,ID=-0.15 A 0.57 nC Gate Drain Charge Qgd Reverse Recovery Charge Qrr 0.18 13 IF=-0.15A, di/dt=100A/µs Reverse Recovery Time trr 23 Turn-on Delay Time tD(on) 8.6 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off Fall Time VGS=-4.5V, VDD=-30V, ID=-0.15A, RGEN=2.5Ω tf 20 ns 15 77 A. Pulse Test: Pulse Width≤10us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. 2/5 S-E085 Rev3.0,25-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84W ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Drain-Source on Resistance Figure4. Drain-Source on Resistance Figure5. Diode Forward Voltage vs. current Figure6. Gate Threshold vs. Junction Temperature 3/5 S-E085 Rev3.0,25-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84W ■ SOT-323 Package information 4/5 S-E085 Rev3.0,25-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com BSS84W Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 5/5 S-E085 Rev3.0,25-Feb-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com