E1DF-F1-0000HF

RoHS E1AF THRU E1KF  COMPLIANT   Surface Mount Super Fast Recovery Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Super Fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in high frequency rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Mechanical Data ● Package: SMAF Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code E1AF E1BF E1CF E1DF E1FF E1GF E1HF E1JF E1KF E1AF E1BF E1CF E1DF E1FF E1GF E1HF E1JF E1KF Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 300 400 500 600 800 Maximum RMS Voltage VRMS V 35 70 105 140 210 280 350 420 560 Maximum DC blocking Voltage VDC V 50 100 150 200 300 400 500 600 800 IO A IFSM A Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ Current squared time @1ms≤t8.3≤ms Tj=25℃，Rating of per diode Typical junction capacitance @Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C 1.0 30 60 3.735 I2t A2s Cj pF Storage temperature Tstg ℃ -55 ~ +150 Junction temperature Tj ℃ -55 ~ +150 18 12 8 10 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT TEST CONDITIONS E1AF E1BF E1CF E1DF E1FF Maximum instantaneous forward voltage drop per diode VF V IFM=1.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A, Irr=0.25A 35 Maximum DC reverse current at rated DC blocking voltage per diode μA Tj =25℃ 5.0 IR Tj =125℃ 100 1.0 E1GF 1.3 E1HF 1.7 E1JF E1KF 1.85 1/5 S-S018 Rev. 2.4, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com E1AF THRU E1KF    ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL E1AF UNIT E1BF E1CF E1DF E1FF RθJ-A(1) E1HF E1JF E1KF 60 ℃/W RθJ-L(1) Typical Thermal resistance E1GF 20 RθJ-C(1) 18 Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ■ Characteristics (Typical) FIG2:Surge Forward Current Capability FIG.1: Io-TL Curve 1.2 30 25 Peak Forward Surge Current(A) Average Rectified Output Curren(A) 1.0 0.8 0.6 0.4 0.2 0 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 80 90 100 110 120 Lead Temperature(℃) 130 140 10 1 10 Number of Cycles 100 FIG4:Typical Reverse Characteristics 100 E1AF~E1DF Instantaneous Reverse Current(uA) Instantaneous Forward Current(A) 15 0 150 FIG3: Typical Forward Voltage 2 1 0.5 E1FF~E1GF E1HF-E1JF E1KF 0.1 0.05 0.02 0.01 20 5 6 4 8.3ms Single Half Sine Wave 0.4 0.8 1.2 1.6 2.0 1.0 0.1 0.01 2.4 Instantaneous Forward Voltage(V) Tj=125℃ 10 Tj=25℃ 0 20 40 60 80 Percent of Rated Peak Reverse Voltage(%) 100 2/5 S-S018 Rev. 2.4, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com E1AF THRU E1KF    FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 10 Ω NONINDUCTIVE 50 Ω NONINDUCTIVE trr +0.5A (-) DUT (+) 0 PULSE GENERATOR (NOTE2) (-) 1Ω NONINDUCTIVE OSCILLOSCOPE (NOTE1) -0.25A (+) -1.0A NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω 1cm SET TIME BASE FOR 5/10ns/cm ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE E1AF-E1KF F1 Approximate 0.034 3000 24000 96000 7” reel E1AF-E1KF F2 Approximate 0.034 10000 20000 160000 13” reel E1AF-E1KF F3 Approximate 0.034 10000 20000 120000 13” reel E1AF-E1KF F4 Approximate 0.034 7500 15000 120000 13” reel   ■ Outline Dimensions SMAF SMAF A E B D C F Dim Min Max A 2.40 2.80 B 1.35 1.45 C 3.40 3.60 D 4.40 4.80 E 1.05 1.25 F 0.50 1.00 G 0.15 0.22 G Dimensions in millimeters 3/5 S-S018 Rev. 2.4, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com E1AF THRU E1KF    ■ Suggested pad layout SMAF P2 Q2 P3 Dim Millimeters P1 6.50 P2 4.00 P3 1.50 Q1  2.50 Q2  1.70 Q1 P1 Dimensions in millimeters 4/5 S-S018 Rev. 2.4, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com E1AF THRU E1KF    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 5/5 S-S018 Rev. 2.4, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com