E1JFS-F1-0000HF

RoHS E1AFS THRU E1JFS  COMPLIANT   Surface Mount Super Fast Recovery Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Super Fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in high frequency rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Mechanical Data ● Package: SMAF Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end 　 ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code E1AFS E1BFS E1CFS E1DFS E1FFS E1GFS E1HFS E1JFS E1AFS E1BFS E1CFS E1DFS E1FFS E1GFS E1HFS E1JFS Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 300 400 500 600 Maximum RMS Voltage VRMS V 35 70 105 140 210 280 350 420 Maximum DC blocking Voltage VDC V 50 100 150 200 300 400 500 600 IO A IFSM A Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ Current squared time @1ms≤t8.3≤ms Tj=25℃，Rating of per diode Typical junction capacitance @Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C 1.0 30 60 I2t A2s Cj pF Storage temperature Tstg ℃ -55 ~ +150 Junction temperature Tj ℃ -55 ~ +150 3.735 15 10 7 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） SYMBOL UNIT TEST CONDITIONS VF V IFM=1.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A, Irr=0.25A 35 Maximum DC reverse current at rated DC blocking voltage per diode IR μA Tj =25℃ 5.0 Tj =125℃ 100 PARAMETER Maximum instantaneous forward voltage drop per diode E1AFS E1BFS E1CFS E1DFS E1FFS E1GFS E1HFS E1JFS 1.0 1.3 1.7 1/5 S-S1218 Rev.1.4,07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com E1AFS THRU E1JFS    ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL E1AFS UNIT E1BFS E1CFS RθJ-A E1DFS E1FFS E1GFS E1HFS E1JFS 651) ℃/W Typical thermal resistance RθJ-L 251) RθJ-C 201) Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ■ Characteristics (Typical) FIG2：Surge Forward Current Capability 30 1.0 25 Peak Forward Surge Current(A) Average Forward Output Current(A) FIG1：Io‐TL Curve 1.2 0.8 0.6 0.4 0.2 0 8.3ms Single Half Sine Wave 20 15 10 5 Single Phase Sine Wave 60Hz Resistive Load 0 30 60 90 120 150 0 180 1 Lead Temperature(℃) 100 Instantaneous Reverse Current(uA) Instantaneous Forward Current(A) E1AFS~E1DFS 2 1 0.5 E1FFS~E1GFS E1HFS-E1JFS 0.1 0.05 0.02 0.01 100 FIG4:Typical Reverse Characteristics FIG3: Typical Forward Voltage 6 4 10 Number of Cycles 0.4 0.8 1.2 1.6 2.0 Instantaneous Forward Voltage(V) 2.4 10 Tj=125℃ 1.0 0.1   Tj=25℃   0.01   0 20 40 60 80 100   Percent of Rated Peak Reverse Voltage(%)   2/5 S-S1218 Rev.1.4,07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com E1AFS THRU E1JFS        FIG.5: Diagram of circuit and Testing wave form of reverse recovery time       10 Ω 50 Ω trr NONINDUCTIVE NONINDUCTIVE   +0.5A   (-)   DUT (+) 0   PULSE GENERATOR   (-) -0.25A (NOTE2)   OSCILLOSCOPE (+) 1Ω (NOTE1) NONINDUCTIVE     NOTES: -1.0A   1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 1cm 2.Rise Time=10ns max.Sourse Impedance=50 Ω   SET TIME BASE FOR 5/10ns/cm       ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE E1AFS-E1JFS F1 Approximate 0.034 3000 24000 96000 7” reel E1AFS-E1JFS F2 Approximate 0.034 10000 20000 160000 13” reel E1AFS-E1JFS F3 Approximate 0.034 10000 20000 120000 13” reel E1AFS-E1JFS F4 Approximate 0.034 7500 15000 120000 13” reel 3/5 S-S1218 Rev.1.4,07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com E1AFS THRU E1JFS    ■ Outline Dimensions SMAF SMAF A E B D F C Dim Min Max A 2.40 2.80 B 1.35 1.45 C 3.40 3.60 D 4.40 4.80 E 1.05 1.25 F 0.50 1.00 G 0.15 0.22 G Dimensions in millimeters ■ Suggested pad layout SMAF P2 Dim Millimeters P1 6.50 P2 4.00 P3 1.50 Q1  2.50 Q2  1.70 Q2 P3 Q1 P1 Dimensions in millimeters 4/5 S-S1218 Rev.1.4,07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com E1AFS THRU E1JFS    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 5/5 S-S1218 Rev.1.4,07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com