ES1DB

RoHS ES1AB THRU ES1KB  COMPLIANT   Surface Mount Super Fast Recovery Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Super Fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in high frequency rectification of power supplies, inverters, converters, and freewheeling diodes for consumer and telecommunication. Mechanical Data ● Package: DO-214AA (SMB) 　 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end 　 ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB Device marking code VRRM V IO A 1.0 IFSM A 30 Storage temperature Tstg ℃ -55~+150 Junction temperature Tj ℃ -55~+150 Repetitive peak reverse voltage Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) Surge(non-repetitive)forward current @60Hz half-sine wave,1 cycle, Ta=25℃ 50 100 150 200 300 400 500 600 800 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER Maximum instantaneous forward voltage drop per diode SYMBOL UNIT TEST ES1AB ES1BB ES1CB ES1DB ES1FB ES1GB ES1HB ES1JB ES1KB CONDITIONS VF V IFM=1.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A, Irr=0.25A 35 Maximum DC reverse current at rated DC blocking voltage per diode @ VRM=VRRM Ta =25℃ 5.0 IRRM μA Ta =125℃ 100 0.95 1.3 1.7 1.85 1/5 S-S784 Rev. 2.4,10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES1AB THRU ES1KB    ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT ES1AB ES1BB ES1CB ES1DB ES1FB RθJ-A ES1GB ES1HB ES1JB ES1KB 601) ℃/W Thermal resistance RθJ-L 151) Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas ■ Characteristics (Typical) FIG2:Surge Forward Current Capability FIG.1: Io-TL Curve 1.2 30 25 Peak Forward Surge Current(A) Average Rectified Output Curren(A) 1.0 0.8 0.6 0.4 0.2 0 90 100 110 120 Lead Temperature(℃) 130 140 10 1 10 Number of Cycles 100 FIG4:Typical Reverse Characteristics FIG3: Forward Voltage 100 ES1AB~ES1DB Instantaneous Reverse Current(uA) Instantaneous Forward Current(A) 15 0 150 6 4 20 5 Resistive or Inductive Load P.C.B. Mounted on 0.3"×0.3" (8.0mm×8.0mm)Copper Pad Areas 80 8.3ms Single Half Sine Wave 2 1 0.5 ES1FB~ES1GB ES1HB-ES1JB ES1KB 0.1 0.05     0.02     0.01 0.4            0.8 1.2 1.6 2.0 Instantaneous Forward Voltage(V) 2.4 Ta=125℃ 10 1.0 0.1 0.01 Ta=25℃ 0 20 40 60 80 Percent of Rated Peak Reverse Voltage(%) 100 2/5 S-S784 Rev. 2.4,10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES1AB THRU ES1KB                                      FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 10 Ω NONINDUCTIVE 50 Ω NONINDUCTIVE trr +0.5A (-) DUT (+) 0 PULSE GENERATOR (NOTE2) (-) OSCILLOSCOPE (NOTE1) 1Ω NONINDUCTIVE -0.25A (+) -1.0A NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω 1cm SET TIME BASE FOR 5/10ns/cm   ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE ES1AB-ES1JB F1 Approximate 0.096 3000 6000 48000 13” reel ES1AB-ES1JB F2 Approximate 0.096 750 3000 24000 7” reel ES1AB-ES1JB F3 Approximate 0.096 500 2000 16000 7” reel ■ Outline Dimensions DO-214AA(SMB) A DO-214AA(SMB) B C D F G H Dim Min Max A 1.85 2.15 B 3.30 3.94 C 4.25 4.75 D 1.99 2.61 E 5.21 5.59 F 0.90 1.41 G 0.10 0.20 H 0.15 0.31 E Dimensions in millimeters 3/5 S-S784 Rev. 2.4,10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES1AB THRU ES1KB    ■ Suggested pad layout DO-214AA(SMB) P2 Q2 Q1 P3 P1 Dimensions in millimeters Dim Millimeters P1 6.8 P2 4.3 P3 1.8 Q1  2.5 Q2  2.3 4/5 S-S784 Rev. 2.4,10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES1AB THRU ES1KB    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 5/5 S-S784 Rev. 2.4,10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com