ES3KB-F1-3000HF

RoHS ES3AB THRU ES3KB  COMPLIANT   Surface Mount Super Fast Recovery Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Super Fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in high frequency rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Mechanical Data ● Package: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code ES3AB ES3BB ES3CB ES3DB ES3FB ES3GB ES3HB ES3JB ES3KB ES3AB ES3BB ES3CB ES3DB ES3FB ES3GB ES3HB ES3JB ES3KB Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 300 400 500 600 800 VRMS V 35 70 105 140 210 280 350 420 560 VDC V 50 100 150 200 300 400 500 600 800 IO A IFSM A Maximum RMS Voltage Maximum DC blocking Voltage Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ 3.0 100 200 Current squared time @1ms≤t8.3≤ms Tj=25℃，Rating of per diode Typical junction capacitance @Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C I2t A2s Cj pF Storage temperature Tstg ℃ -55 ~ +150 Junction temperature Tj ℃ -55 ~ +150 41.5 60 35 29 21 1/5 S-S316 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES3AB THRU ES3KB    ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER TEST ES3AB ES3BB ES3CB ES3DB ES3FB ES3GB ES3HB ES3JB ES3KB CONDITIONS SYMBOL UNIT Maximum instantaneous forward voltage drop per diode VF V IFM=3.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A, Irr=0.25A 35 Maximum DC reverse current at rated DC blocking voltage per diode Tj =25℃ 5 IR μA Tj =125℃ 100 0.95 1.3 1.7 1.85 ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT ES3AB ES3BB ES3CB RθJ-A(1) Typical Thermal Resistance ES3DB ES3FB ES3GB ES3HB ES3JB ES3KB 65 ℃/W RθJ-L(1) 20 RθJ-C(1) 18 Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas ■ Characteristics (Typical) FIG1：Io‐TL Curve FIG2：Surge Forward Current Capability 120 3.0 Peak Forward Surge Current(A) Average Forward Output Current(A) 3.5 2.5 2.0 1.5 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.3"×0.3" (8.0mm×8.0mm)Copper Pad Areas 0.5 0 0 25 50 100 8.3ms Single Half Sine Wave 80 60 40 20 75 100 125 150 Lead Temperature(℃) 0 1 10 Number of Cycles 100 2/5 S-S316 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES3AB THRU ES3KB    FIG3：Typial Forward Voltage FIG4:Typical Reverse Characteristics 100 Instantaneous Reverse Current(uA) Instantaneous Forward Current(A) 100 ES3AB-3DB 10 3.0 ES3KB 1.0 ES3HB-3JB ES3FB-3GB 0.1     0.01     0.5     0.7 0.9 1.1 1.3 1.7 1.5 1.9 Tj=125 ℃ 10 1.0 Tj=25 ℃ 0.1 0.01 0 2.1 20 40 60 80 100 Percent of Rated Peak Reverse Voltage(%) Instantaneous Forward Voltage(V)                                   FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 50 Ω NONINDUCTIVE 10 Ω NONINDUCTIVE trr +0.5A (-) (+) DUT 0 PULSE GENERATOR (NOTE2) (-) OSCILLOSCOPE (NOTE1) 1Ω NONINDUCTIV -0.25A (+) NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω -1.0A 1cm SET TIME BASE FOR 5/10ns/cm   ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE ES3AB-ES3KB F1 Approximate 0.096 3000 6000 48000 13” reel ES3AB-ES3KB F2 Approximate 0.096 750 6000 24000 7” reel ES3AB-ES3KB F3 Approximate 0.096 500 4000 16000 7” reel 3/5 S-S316 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES3AB THRU ES3KB    ■ Outline Dimensions DO-214AA(SMB) A DO-214AA(SMB) B C D G F H Dim Min Max A 1.85 2.15 B 3.30 3.94 C 4.05 4.75 D 1.99 2.61 E 5.21 5.59 F 0.90 1.41 G 0.10 0.20 H 0.15 0.31 E Dimensions in millimeters ■ Suggested pad layout DO-214AA(SMB) P2 Q2 Q1 P3 P1 Dimensions in millimeters Dim Millimeters P1 6.8 P2 4.3 P3 1.8 Q1  2.5 Q2  2.3 4/5 S-S316 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES3AB THRU ES3KB    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 5/5 S-S316 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com