ES5D-F1-0000

ES5D-F1-0000

  • 厂商:

    YANGJIE(扬杰科技)

  • 封装:

    DO214AB

  • 描述:

    DIODE GEN PURP 200V 5A DO214AB

  • 数据手册
  • 价格&库存
ES5D-F1-0000 数据手册
RoHS ES5A THRU ES5J  COMPLIANT   Super Fast Recovery Rectifier Diode Features ● Ultrafast reverse recovery time ● Low leakage current ● Low switching losses, high efficiency ● High forward surge capability ● Solder dip 260°C max. 10 s, per JESD 22-B106 Typical Applications For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. Mechanical Data ● Package: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Color band denotes the cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT Device marking code ES5A ES5B ES5C ES5D ES5F ES5G ES5H ES5J ES5A ES5B ES5C ES5D ES5F ES5G ES5H ES5J Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 300 400 500 600 Maximum RMS Voltage VRMS V 35 70 105 140 210 280 350 420 VDC V 50 100 150 200 300 400 500 600 IO A IFSM A Maximum DC blocking Voltage Average Rectified Output Current @60Hz sine wave, Resistance load, TL (FIG.1) Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ 5.0 150 300 Current squared time @1ms≤t8.3≤ms Tj=25℃,Rating of per diode Typical junction capacitance @Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C 94 I2t A2s Cj pF Storage Temperature Tstg ℃ -55 ~ +150 Junction Temperature Tj ℃ -55 ~ +150 75 37 35 1/5 S-S031 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES5A THRU ES5J    ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT Maximum instantaneous forward voltage drop per diode TEST CONDITIONS ES5A ES5B ES5C ES5D ES5F VF V IFM=5.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A, Irr=0.25A 35 Maximum DC reverse current at rated DC blocking voltage per diode Tj =25℃ 5 IR μA Tj =125℃ 100 0.95 ES5G 1.3 ES5H ES5J 1.7 ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT ES5A ES5B ES5C ES5D ES5F RθJ-A(1) ES5H ES5J 50 ℃/W RθJ-L(1) Typical Thermal Resistance ES5G 15 RθJ-C(1) 12 Note(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.6" x 0.6" (16 mm x 16 mm) copper pad areas ■Ordering Information (Example) PREFERED P/N PACKAGE CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE ES5A~ES5J F1 Approximate 0.254 3000 6000 42000 13” reel ■ Characteristics(Typical) FIG.2: Forward Surge Current Capability 175 6.0 150 Peak Forward Surge Current (A) Average Forward Output Current (A) FIG.1: Io-TL Curve 7.0 5.0 4.0 3.0 2.0 100 50 Resistive or Inductive Load P.C.B. Mounted on 0.6"×0.6" (16mm×16mm)Copper Pad Areas 1.0 0 8.3ms Single Half Sine Wave JEDEC Method 50 70 90 110 130 150 0 1 2 Lead Temperature (℃) 10 20 100 Number of Cycles 2/5 S-S031 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES5A THRU ES5J    FIG.4: Typical Reverse Characteristics FIG.3: Forward Voltage 100 ES5A-ES5D ES5F-ES5G 10 ES5H-ES5J 1.0 0.1 0.01 0.4 0.6 1.0 0.8 1.2 1.4 1.6 Instantaneous Reverse Current (uA) Instantaneous Forward Current (A) 100 Tj=125℃ 10 1.0 0.01 0.001 1.8 Instantaneous Forward Voltage (V) Tj=25℃ 0.1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 10 Ω NONINDUCTIVE 50 Ω NONINDUCTIVE trr +0.5A (-) (+) DUT 0 PULSE GENERATOR (NOTE2) (-) 1Ω NONINDUCTIV OSCILLOSCOPE (NOTE1) -0.25A (+) NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50Ω -1.0A 1cm SET TIME BASE FOR 5/10ns/cm ■ Outline Dimensions DO-214AB(SMC) DO-214AB (SMC) Dim Min Max A 6.60 7.11 B 2.85 3.27 C 5.59 6.22 D 7.75 8.13 E 1.99 2.61 F 0.15 0.31 G 0.76 1.52 H 0.10 0.20 Dimensions in millimeters 3/5 S-S031 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES5A THRU ES5J    ■ Suggested pad layout Dim P2 Q1 Typ P1 9.9 P2 3.84 Q1  3.03 Q2  3.82 Q2 P1 Dimensions in millimeters 4/5 S-S031 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com ES5A THRU ES5J    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 5/5 S-S031 Rev. 2.6, 07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
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