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F1GFS

F1GFS

  • 厂商:

    YANGJIE(扬杰科技)

  • 封装:

    SMAF

  • 描述:

    二极管配置:独立式;直流反向耐压(Vr):400V;平均整流电流(Io):1A;正向压降(Vf):1.3V@1A;反向电流(Ir):5uA@400V;反向恢复时间(trr):150ns;工作温度:-5...

  • 数据手册
  • 价格&库存
F1GFS 数据手册
RoHS F1AFS THRU F1MFS  COMPLIANT   Surface Mount Fast Recovery Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in high frequency rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Mechanical Data ● Package: SMAF Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end   ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT Device marking code F1AFS F1BFS F1DFS F1GFS F1JFS F1KFS F1MFS F1AFS F1BFS F1DFS F1GFS F1JFS F1KFS F1MFS 50 100 200 400 600 800 1000 VRRM V IO A 1.0 Surge(non-repetitive)forward current @60Hz half-sine wave,1 cycle, Ta=25℃ IFSM A 30 Storage temperature Tstg ℃ -55~+150 Junction temperature Tj ℃ -55~+150 Repetitive peak reverse voltage Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER Maximum instantaneous forward voltage drop per diode Maximum reverse recovery time Maximum DC reverse current at rated DC blocking voltage per diode @ VRM=VRRM SYMBOL UNIT TEST CONDITIONS VF V IFM=1.0A trr ns IF=0.5A,IR=1.0A, Irr=0.25A IRRM μA F1AFS F1BFS F1DFS F1GFS F1JFS F1KFS F1MFS 1.3 150 250 Ta =25℃ 5.0 Ta =125℃ 100 500 1/5 S-S1702 Rev. 2.3, 10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com F1AFS THRU F1MFS    ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT F1AFS F1BFS RθJ-A(1) F1DFS F1GFS F1JFS F1KFS F1MFS 751) ℃/W Typical Thermal resistance RθJ-L(1) 251) Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ■ Characteristics (Typical) FIG2:Surge Forward Current Capability FIG.1: Io-TL Curve 1.2 30 25 Peak Forward Surge Current(A) Average Rectified Output Curren(A) 1.0 0.8 0.6 0.4 0.2 0 90 100 20 15 10 5 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 80 8.3ms Single Half Sine Wave 110 120 Lead Temperature(℃) 130 140 0 150 1 10 Number of Cycles 100 FIG4:Typical Reverse Characteristics FIG3: Forward Voltage 100 6 Instantaneous Reverse Current(uA) Instantaneous Forward Current(A) 4 2 1 0.5 0.1 0.05 0.02 0.01 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage(V) S-S032 Rev. 2.3, 10-Dec-19 1.6 10 Ta=125℃ 1.0 0.1   Ta=25℃     0.01 0 20 40 60 80 100   Percent of Rated Peak Reverse Voltage(%)             2/5 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com F1AFS THRU F1MFS    FIG.5: Diagram of circuit and Testing wave form of reverse recovery time                               10 Ω NONINDUCTIVE 50 Ω NONINDUCTIVE (-) DUT (+) PULSE GENERATOR (NOTE2) (-) OSCILLOSCOPE (NOTE1) 1Ω NONINDUCTIV (+) NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50Ω trr +0.5A 0 -0.25A -1.0A 1cm SET TIME BASE FOR 5/10ns/cm ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE F1AFS-F1MFS F1 Approximate 0.034 3000 12000 96000 7” reel F1AFS-F1MFS  F2 Approximate 0.034 10000 20000 160000 13” reel F1AFS-F1MFS  F3 Approximate 0.034 10000 20000 120000 13” reel F1AFS-F1MFS  F4 Approximate 0.034 7500 15000 120000 13” reel   ■ Outline Dimensions SMAF SMAF A E B D C F Dim Min A 2.40 Max 2.80 B 1.35 1.45 C 3.40 3.60 D 4.40 4.80 E 1.05 1.25 F 0.50 1.00 G 0.15 0.22 G Dimensions in millimeters 3/5 S-S032 Rev. 2.3, 10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com F1AFS THRU F1MFS    ■ Suggested pad layout SMAF P2 Q2 P3 Dim Millimeters P1 6.50 P2 4.00 P3 1.50 Q1  2.50 Q2  1.70 Q1 P1 Dimensions in millimeters 4/5 S-S032 Rev. 2.3, 10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com F1AFS THRU F1MFS    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 5/5 S-S032 Rev. 2.3, 10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
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