F1JF

RoHS F1AF THRU F1MF  COMPLIANT   Surface Mount Fast Recovery Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in high frequency rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Mechanical Data ● Package: SMAF Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end 　 ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code F1AF F1BF F1DF F1GF F1JF F1KF F1MF F1AF F1BF F1DF F1GF F1JF F1KF F1MF Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 Maximum RMS Voltage VRMS V 35 70 140 280 420 560 700 VDC V 50 100 200 400 600 800 1000 IO A IFSM A F1JF F1KF F1MF Maximum DC blocking Voltage Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ 1.0 30 60 Current squared time @1ms≤t≤8.3ms Tj=25℃ It 2 As 2 3.735 Storage temperature Tstg ℃ -55 ~ +150 Junction temperature Tj ℃ -55 ~ +150 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER Maximum instantaneous forward voltage SYMBOL UNIT TEST CONDITIONS VF V IFM=1.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A, Irr=0.25A Maximum DC reverse current at rated DC blocking voltage IR μA Typical junction capacitance Cj pF F1AF F1BF F1DF F1GF 1.3 150 250 Tj =25℃ 5.0 Tj =125℃ Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C 100 11 500 7 1/5 S-S032 Rev. 2.5, 23-Nov-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com F1AF THRU F1MF    ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT F1AF F1BF RθJ-A(1) Typical Thermal resistance F1DF F1GF F1JF F1KF F1MF 70 RθJ-L(1) ℃/W 20 RθJ-C(1) 18 Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ■ Characteristics (Typical) FIG2:Surge Forward Current Capability FIG.1: Io-TL Curve 1.2 30 25 Peak Forward Surge Current(A) Average Rectified Output Curren(A) 1.0 0.8 0.6 0.4 0.2 0 80 100 20 15 10 5 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 90 8.3ms Single Half Sine Wave 110 120 Lead Temperature(℃) 130 140 0 150 1 100 Instantaneous Reverse Current(uA) Instantaneous Forward Current(A) 100 FIG4:Typical Reverse Characteristics FIG3：Typical Forward Voltage 100 10 1.0 0.1 0.01 0.2 10 Number of Cycles 0.4 0.6 0.8 1.0 1.2 Instantaneous Forward Voltage(V) 1.4 1.6 10 Tj=125℃ 1.0 0.1     Tj=25℃   0.01 0 20 40 60 80 100   Percent of Rated Peak Reverse Voltage(%)         2/5 S-S032 Rev. 2.5, 23-Nov-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com F1AF THRU F1MF    FIG.5: Diagram of circuit and Testing wave form of reverse recovery time                         10 Ω NONINDUCTIVE 50 Ω NONINDUCTIVE (-) DUT (+) PULSE GENERATOR (NOTE2) (-) OSCILLOSCOPE (NOTE1) 1Ω NONINDUCTIV (+) NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50Ω trr +0.5A 0 -0.25A -1.0A 1cm SET TIME BASE FOR 5/10ns/cm ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE F1AF-F1MF F1 Approximate 0.034 3000 24000 96000 7” reel F1AF-F1MF F2 Approximate 0.034 10000 / 160000 13” reel F1AF-F1MF F3 Approximate 0.034 10000 / 120000 13” reel F1AF-F1MF F4 Approximate 0.034 7500 / 120000 13” reel   ■ Outline Dimensions SMAF SMAF A E B D C F Dim Min A 2.40 Max 2.80 B 1.35 1.45 C 3.40 3.60 D 4.40 4.80 E 1.05 1.25 F 0.50 1.00 G 0.15 0.22 G Dimensions in millimeters 3/5 S-S032 Rev. 2.5, 23-Nov-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com F1AF THRU F1MF    ■ Suggested pad layout SMAF P2 Q2 P3 Dim Millimeters P1 6.50 P2 4.00 P3 1.50 Q1  2.50 Q2  1.70 Q1 P1 Dimensions in millimeters 4/5 S-S032 Rev. 2.5, 23-Nov-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com F1AF THRU F1MF    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 5/5 S-S032 Rev. 2.5, 23-Nov-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com