G3MF-F1-0000HF

G3MF-F1-0000HF

  • 厂商:

    YANGJIE(扬杰科技)

  • 封装:

    SMA-FL(DO-221AC)

  • 描述:

    DIODE GEN PURP 1000V 3A SMAF

  • 详情介绍
  • 数据手册
  • 价格&库存
G3MF-F1-0000HF 数据手册
RoHS G3AF THRU G3MF  COMPLIANT   Surface Mount General Purpose Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Mechanical Data ● Package: SMAF Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT G3AF G3BF G3DF G3GF G3JF G3KF G3MF G3AF G3BF G3DF G3GF G3JF G3KF G3MF Device marking code Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 200 400 600 800 1000 Maximum RMS Voltage VRMS V 35 70 140 280 420 560 700 VDC V 50 100 200 400 600 800 1000 IO A IFSM A G3KF G3MF Maximum DC blocking Voltage Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ Current squared time @1ms≤t8.3≤ms Tj=25℃,Rating of per diode Typical junction capacitance @Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C 3.0 90 180 I2t A2s 33.6 Cj pF 18 Storage temperature Tstg ℃ -55 ~ +150 Junction temperature Tj ℃ -55 ~ +150 ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) SYMBOL UNIT TEST CONDITIONS Maximum instantaneous forward voltage drop per diode VF V IFM=3.0A 1.1 Maximum DC reverse current at rated DC blocking voltage per diode μA Tj =25℃ 5.0 IR Tj =125℃ 100 PARAMETER G3AF G3BF G3DF G3GF G3JF 1/4 S-S665 Rev. 2.5,07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com G3AF THRU G3MF    ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL G3AF UNIT G3BF G3DF RθJ-A1) G3JF G3KF G3MF 65 RθJ-L(1) Typical Thermal resistance G3GF 20 ℃/W RθJ-C(1) 15 Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE G3AF-G3MF F1 Approximate 0.034 3000 24000 96000 7” reel G3AF-G3MF F2 Approximate 0.034 10000 20000 160000 13” reel G3AF-G3MF F3 Approximate 0.034 10000 20000 120000 13” reel G3AF-G3MF F4 Approximate 0.034 7500 15000 120000 13” reel ■ Characteristics (Typical) FIG1:Io‐TL Curve FIG2:Surge Forward Current Capability 108 3.0 Peak Forward Surge Current(A) Average Forward Output Current(A) 3.5 2.5 2.0 1.5 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 0.5 0 25 0 50 90 8.3ms Single Half Sine Wave 72 54 36 18 75 100 125 0 150 1 Lead Temperature(℃) FIG3:Typial Forward Voltage 100 FIG4:Typical Reverse Characteristics 100 100 Instantaneous Reverse Current(uA) Instantaneous Forward Current(A) 10 Number of Cycles 10 3.0 1.0 0.1 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Tj=125 ℃ 10 1.0 0.01 0 1.3 Instantaneous Forward Voltage(V) Tj=25 ℃ 0.1 20 40 60 80 100 Percent of Rated Peak Reverse Voltage(%) 2/4 S-S665 Rev. 2.5,07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com G3AF THRU G3MF    ■ Outline Dimensions SMAF SMAF A E B D F C Dim Min Max A 2.40 2.80 B 1.35 1.45 C 3.40 3.60 D 4.40 4.80 E 1.05 1.25 F 0.50 1.00 G 0.15 0.22 G Dimensions in millimeters ■ Suggested pad layout SMAF P2 Q2 P3 Dim Millimeters P1 6.50 P2 4.00 P3 1.50 Q1  2.50 Q2  1.70 Q1 P1 Dimensions in millimeters 3/4 S-S665 Rev. 2.5,07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com G3AF THRU G3MF    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 4/4 S-S665 Rev. 2.5,07-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
G3MF-F1-0000HF
1. 物料型号:G3AF至G3MF,是一系列整流器型号。 2. 器件简介:这些整流器具有低轮廓封装,适合自动化放置,玻璃钝化芯片结构,高正向浪涌能力,符合MSL 1级标准。 3. 引脚分配:文档中提到了极性,阴极线表示阴极端。 4. 参数特性:包括最大重复峰值反向电压(VRRM)、最大RMS电压(VRMS)、最大直流阻断电压(VDC)、平均整流输出电流(IO)、正向浪涌电流(IFSM)、电流平方时间(I2t)和典型结电容(Cj)等。 5. 功能详解:文档提供了整流器的典型应用,如电源、逆变器、转换器和消费类及电信设备的自由轮二极管。 6. 应用信息:适用于一般用途的整流、电源、逆变器、转换器和自由轮二极管。 7. 封装信息:封装类型为SMAF,提供了详细的机械数据和建议的焊盘布局。
G3MF-F1-0000HF 价格&库存

很抱歉,暂时无法提供与“G3MF-F1-0000HF”相匹配的价格&库存,您可以联系我们找货

免费人工找货