G3MF

RoHS G3AF THRU G3MF  COMPLIANT   Surface Mount General Purpose Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in general purpose rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Mechanical Data ● Package: SMAF Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code G3AF G3BF G3DF G3GF G3JF G3KF G3MF G3AF G3BF G3DF G3GF G3JF G3KF G3MF 50 100 200 400 600 800 1000 G3KF G3MF VRRM V IO A 3.0 Surge(non-repetitive)forward current @60Hz half-sine wave,1 cycle, Ta=25℃ IFSM A 90 Storage temperature Tstg ℃ -55~+150 Junction temperature Tj ℃ -55~+150 Repetitive peak reverse voltage Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） SYMBOL UNIT TEST CONDITIONS Maximum instantaneous forward voltage drop per diode VF V IFM=3.0A 1.1 Maximum DC reverse current at rated DC blocking voltage per diode @ VRM=VRRM Ta =25℃ 5.0 IRRM μA Ta =125℃ 100 PARAMETER G3AF G3BF G3DF G3GF G3JF 1/4 S-S665 Rev. 2.4,10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com G3AF THRU G3MF    ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL RθJ-A1) Typical Thermal resistance G3AF UNIT G3BF G3DF G3GF G3JF G3KF G3MF 65 ℃/W RθJ-L(1) 20 Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE G3AF-G3MF F1 Approximate 0.034 3000 12000 96000 7” reel G3AF-G3MF F2 Approximate 0.034 10000 20000 160000 13” reel G3AF-G3MF F3 Approximate 0.034 10000 20000 120000 13” reel G3AF-G3MF F4 Approximate 0.034 7500 15000 120000 13” reel ■ Characteristics (Typical) FIG1：Io‐TL Curve FIG2：Surge Forward Current Capability 108 3.0 Peak Forward Surge Current(A) Average Forward Output Current(A) 3.5 2.5 2.0 1.5 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 0.5 0 25 0 50 90 8.3ms Single Half Sine Wave 72 54 36 18 75 100 125 0 150 1 10 FIG4:Typical Reverse Characteristics FIG3：Typial Forward Voltage 100 Instantaneous Reverse Current(uA) 100 Instantaneous Forward Current(A) 100 Number of Cycles Lead Temperature(℃) 10 3.0 1.0 0.1 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage(V) S-S665 Rev. 2.4,10-Dec-19 1.2 Ta=125 ℃ 10 1.0 0.01 0 1.3 2/4 Ta=25 ℃ 0.1 20 40 60 80 100 Percent of Rated Peak Reverse Voltage(%) Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com G3AF THRU G3MF    FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 10 Ω NONINDUCTIVE 50 Ω NONINDUCTIVE trr +0.5A (-) DUT (+) 0 PULSE GENERATOR (NOTE2) (-) 1Ω NONINDUCTIVE OSCILLOSCOPE (NOTE1) -0.25A (+) -1.0A NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω 1cm SET TIME BASE FOR 5/10ns/cm ■ Outline Dimensions SMAF SMAF A E B D F C Dim Min Max A 2.40 2.80 B 1.35 1.45 C 3.40 3.60 D 4.40 4.80 E 1.05 1.25 F 0.50 1.00 G 0.15 0.22 G Dimensions in millimeters ■ Suggested pad layout SMAF P2 Q2 P3 Dim Millimeters P1 6.50 P2 4.00 P3 1.50 Q1  2.50 Q2  1.70 Q1 P1 Dimensions in millimeters 3/4 S-S665 Rev. 2.4,10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com G3AF THRU G3MF    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 4/4 S-S665 Rev. 2.4,10-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com