RoHS
H1AFS THRU H1MFS
COMPLIANT
Surface Mount High Efficient Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Super fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
Mechanical Data
● Package: SMAF
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
● Polarity: Cathode line denotes the cathode end
■Maximum Ratings (Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL
UNIT
Device marking code
H1AFS
H1BFS
H1DFS
H1GFS
H1JFS
H1KFS
H1MFS
H1AFS
H1BFS
H1DFS
H1GFS
H1JFS
H1KFS
H1MFS
50
100
200
400
600
800
1000
H1JFS
H1KFS
VRRM
V
IO
A
1.0
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Ta=25℃
IFSM
A
30
Storage temperature
Tstg
℃
-55~+150
Junction temperature
Tj
℃
-55~+150
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load, TL (Fig.1)
■Electrical Characteristics(Ta=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum reverse recovery time
Maximum DC reverse current
at rated DC blocking voltage
per diode @ VRM=VRRM
SYMBOL
UNIT
TEST
CONDITIONS
VF
V
IFM=1.0A
trr
ns
IF=0.5A,IR=1.0A,
Irr=0.25A
IRRM
μA
H1AFS
H1BFS
H1DFS
H1GFS
1.0
1.3
50
H1MFS
1.7
75
Ta =25℃
5.0
Ta =125℃
100
1/5
S-S1703
Rev. 2.3, 20-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
H1AFS THRU H1MFS
■Thermal Characteristics (Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL
H1AFS
UNIT
H1BFS
H1DFS
H1GFS
RθJ-A(1)
H1JFS
H1KFS
H1MFS
751)
℃/W
Typical Thermal resistance
RθJ-L(1)
301)
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
■ Characteristics (Typical)
FIG.2: Forward Surge Current Capability
FIG.1: Io-TL Cure
30
1.20
Peak Forward Surge Current (A)
Average Forward Output Current(A)
1.40
1.00
0.80
0.60
0.40
60Hz Resistive or Inductive Load
P.C.B. Mounted on 0.2"×0.2"
(5.0mm×5.0mm)Copper Pad Areas
0.20
0
0
30
60
90
120
24
8.3ms Single Half Sine Wave
JEDEC Method
18
12
6
0
150
1
2
Lead Temperature(℃)
6
8 10
20
40
60 80 100
Number of Cycles
FIG.4: Typical Reverse Characteristics
FIG.3: Typical Forward Characteristics
100
H1FFS-H1GFS
10
H1AFS-H1DFS
1.0
H1JFS-H1MFS
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
S-S058
Rev. 2.3, 20-Dec-19
1.6
1.8
Instantaneous Reverse Current (uA)
100
Instantaneous Forward Current (A)
4
10
Ta=125℃
1.0
0.1
Ta=25℃
0.01
0.001
0
2/5
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
H1AFS THRU H1MFS
FIG.5: Diagram of circuit and Testing wave form of reverse recovery time
50 Ω
NONINDUCTIVE
10 Ω
NONINDUCTIVE
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE2)
(-)
OSCILLOSCOPE
(NOTE1)
1Ω
NONINDUCTIV
(+)
NOTES:
1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf
2.Rise Time=10ns max.Sourse Impedance=50 Ω
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
5/10ns/cm
■Ordering Information (Example)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(g)
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
H1AFS-H1MFS
F1
Approximate 0.034
3000
12000
96000
7” reel
H1AFS-H1MFS
F2
Approximate 0.034
10000
20000
160000
13” reel
H1AFS-H1MFS
F3
Approximate 0.034
10000
20000
120000
13” reel
H1AFS-H1MFS
F4
Approximate 0.034
7500
15000
120000
13” reel
■ Outline Dimensions
SMAF
SMAF
A
E
B
D
C
F
Dim
Min
A
2.40
Max
2.80
B
1.35
1.45
C
3.40
3.60
D
4.40
4.80
E
1.05
1.25
F
0.50
1.00
G
0.15
0.22
G
Dimensions in millimeters
3/5
S-S058
Rev. 2.3, 20-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
H1AFS THRU H1MFS
■ Suggested pad layout
SMAF
P2
Q2
P3
Dim
Millimeters
P1
6.50
P2
4.00
P3
1.50
Q1
2.50
Q2
1.70
Q1
P1
Dimensions in millimeters
4/5
S-S058
Rev. 2.3, 20-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
H1AFS THRU H1MFS
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
5/5
S-S058
Rev. 2.3, 20-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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