H1MF

RoHS H1AF THRU H1MF  COMPLIANT   Surface Mount High Efficient Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Super fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in high frequency rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Mechanical Data ● Package: SMAF Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end 　 ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code H1AF H1BF H1DF H1GF H1JF H1KF H1MF H1AF H1BF H1DF H1GF H1JF H1KF H1MF 50 100 200 400 600 800 1000 H1KF H1MF VRRM V IO A 1.0 Surge(non-repetitive)forward current @60Hz half-sine wave,1 cycle, Ta=25℃ IFSM A 30 Storage temperature Tstg ℃ -55~+150 Junction temperature Tj ℃ -55~+150 Repetitive peak reverse voltage Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER Maximum instantaneous forward voltage drop per diode Maximum reverse recovery time Maximum DC reverse current at rated DC blocking voltage per diode @ VRM=VRRM SYMBOL UNIT TEST CONDITIONS VF V IFM=1.0A trr ns IF=0.5A,IR=1.0A, Irr=0.25A IRRM μA H1AF H1BF H1DF 1.0 H1GF 1.3 50 H1JF 1.7 75 Ta =25℃ 5.0 Ta =125℃ 100 1/5 S-S058 Rev. 2.3, 20-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com H1AF THRU H1MF    ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT H1AF H1BF H1DF H1GF RθJ-A(1) H1JF H1KF H1MF 701) ℃/W Typical Thermal resistance RθJ-L(1) 251) Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ■ Characteristics (Typical) FIG.2: Forward Surge Current Capability FIG.1: Io-TL Cure 30 1.20 Peak Forward Surge Current (A) Average Forward Output Current(A) 1.40 1.00 0.80 0.60 0.40 60Hz Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 0.20 0 0 30 60 90 120 24 8.3ms Single Half Sine Wave JEDEC Method 18 12 6 0 150 1 2 Lead Temperature(℃) 6 8 10 20 40 60 80 100 Number of Cycles FIG.4: Typical Reverse Characteristics FIG.3: Typical Forward Characteristics 100 H1FF-H1GF 10 H1AF-H1DF 1.0 H1JF-H1MF 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage (V) 1.6 1.8                   Instantaneous Reverse Current (uA) 100 Instantaneous Forward Current (A) 4 10 Ta=125℃ 1.0 0.1 Ta=25℃ 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) 2/5 S-S058 Rev. 2.3, 20-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com H1AF THRU H1MF    FIG.5: Diagram of circuit and Testing  wave form of reverse recovery time 50 Ω NONINDUCTIVE                               10 Ω NONINDUCTIVE (-) DUT (+) PULSE GENERATOR (NOTE2) (-) OSCILLOSCOPE (NOTE1) 1Ω NONINDUCTIV (+) NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω trr +0.5A 0 -0.25A -1.0A 1cm SET TIME BASE FOR 5/10ns/cm     ■Ordering Information (Example) PREFERED P/N PACKING CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE H1AF-H1MF F1 Approximate 0.034 3000 12000 96000 7” reel H1AF-H1MF F2 Approximate 0.034 10000 20000 160000 13” reel H1AF-H1MF F3 Approximate 0.034 10000 20000 120000 13” reel H1AF-H1MF F4 Approximate 0.034 7500 15000 120000 13” reel ■ Outline Dimensions SMAF SMAF A E B D C F Dim Min A 2.40 Max 2.80 B 1.35 1.45 C 3.40 3.60 D 4.40 4.80 E 1.05 1.25 F 0.50 1.00 G 0.15 0.22 G Dimensions in millimeters 3/5 S-S058 Rev. 2.3, 20-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com H1AF THRU H1MF    ■ Suggested pad layout SMAF P2 Q2 P3 Dim Millimeters P1 6.50 P2 4.00 P3 1.50 Q1  2.50 Q2  1.70 Q1 P1 Dimensions in millimeters 4/5 S-S058 Rev. 2.3, 20-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com H1AF THRU H1MF    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 5/5 S-S058 Rev. 2.3, 20-Dec-19 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com