HER508G-D1-0000

HER508G-D1-0000

  • 厂商:

    YANGJIE(扬杰科技)

  • 封装:

    DO-201AA

  • 描述:

    DIODE GEN PURP 1000V 5A DO201AD

  • 数据手册
  • 价格&库存
HER508G-D1-0000 数据手册
RoHS HER501G THRU HER508G  COMPLIANT   High Efficient Rectifier Features ● High efficiency ● High current capability ● High Reliability ● High surge current capability ● Glass passivated chip junction ● Solder dip 275 °C max. 7 s, per JESD 22-B106   Mechanical Data ● Package: DO-201AD(DO-27) Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD002 and JESD22-B102 ● Polarity:Color band denotes cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT Device marking code HER501 G HER502 G HER503 G HER504 G HER505 G HER506 G HER507 G HER508 G HER501 G HER502 G HER503 G HER504 G HER505 G HER506 G HER507 G HER508 G Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 200 300 400 600 800 1000 Maximum RMS Voltage VRMS V 35 70 140 210 280 420 560 700 Maximum DC blocking Voltage VDC V 50 100 200 300 400 600 800 1000 Average Forward Current @60Hz sine wave, Resistance load, Ta=50℃ IF(AV) A IFSM A 5.0 Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ 150 Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ 300 Current squared time @1ms≤t8.3≤ms Tj=25℃,Rating of per diode I2t A2s Typical junction capacitance @Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C Cj pF Storage Temperature Tstg ℃ -55 ~ +150 Junction Temperature Tj ℃ -55 ~ +150 94 72 46 52 ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT TEST CONDITIONS Maximum instantaneous forward voltage drop per diode VF V IFM=5.0A Maximum DC reverse current at rated DC blocking voltage per diode IR μA Maximum reverse recovery time trr ns HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508 G G G G G G G G 1.0 1.3 Tj =25℃ 2.5 Tj =125℃ 100 IF=0.5A,IR=1.0A, Irr=0.25A 50 1.7 75 1/4 S-A288 Rev. 2.2, 30-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com HER501G THRU HER508G    ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT HER501G HER502G HER503G HER504G HER505G HER506G HER507G HER508G Typical Thermal Resistance RθJ-A ℃/W 20 ■Ordering Information (Example) PREFERED P/N PACKAGE CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE HER501G~HER508G D1 Approximate 1.05 1250 1250 12500 Tape HER501G~HER508G C1 Approximate 1.05 250 250 12500 Bulk ■ Characteristics (Typical) FIG.2: Forward Surge Current Capability FIG.1: Io-Ta Curve 150 Peak Forward Surge Current (A) 4 3 2 S Average Forward Output Current (A) 5 ingle Phase Half Wave 60HZ Resistive or Inductive Load 0.375''(9.5mm) Lead Length 1 0 8.3ms Single Half Sine Wave JEDEC Method 90 60 30 0 0 0 1 0 120 50 100 1 150 2 4 6 8 10 20 40 60 80 100 Number of Cycles Ambient Temperature (℃) FIG.4: Typical Rrverse Characteristics FIG.3: Forward Voltage 100 100 HER504G-HER505G 10 HER506G-HER508G 1.0 0.1 0.01 0.6 TJ=25℃ Pulse width=300us 1% Duty Cycle Instantaneous Reverse Current (uA) Instantaneous Forward Current (A) HER501G-HER503G Tj=125℃ 10 1.0 Tj=100℃ 0.1 Tj=25℃ 0.01 0.001 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (V) 2/4 S-A288 Rev. 2.2, 30-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com HER501G THRU HER508G    FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 50 Ω NONINDUCTIVE 10 Ω NONINDUCTIVE trr +0.5A (-) (+) DUT 0 PULSE GENERATOR (NOTE2) (-) 1Ω NONINDUCTIV OSCILLOSCOPE (NOTE1) -0.25A (+) NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50Ω -1.0A 1cm SET TIME BASE FOR 5/10ns/cm ■ Outline Dimensions DO-201AD(DO-27) DO-201AD(DO-27) Dim Min Max A 8.50 9.50 B C 5.00 5.60 25.4 / D 1.20 1.30 Dimensions in millimeters 3/4 S-A288 Rev. 2.2, 30-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com HER501G THRU HER508G    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 4/4 S-A288 Rev. 2.2, 30-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
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