HS1A THRU HS1M 高效整流二极管 High Efficient Rectifier
■特征 Features ■外形尺寸和印记 Outline Dimensions and Mark
Mounting Pad Layout
0.065 (1.66) 0.080 (2.04) 0.077(1.96) 0.220 .012(0.31) (5.58) .006(0.15) .008(0.20) .003(0.08) .208(5.28) .194(4.93) D imensions in inches and (millimeters)
● Io 1.0A ● VRRM 50V-1000V ● 耐正向浪涌电流能力高 High surge current capability ● 封装:模压塑料 Cases: Molded plastic
DO-214AC(SMA)
.062(1.58) .049(1.25) .187(4.75) .167(4.25) .091(2.30) .075(1.90) .056(1.41) .030(0.76) .111(2.83) .094(2.40)
■用途
Applications
●整流用 Rectifier
■极限值(绝对最大额定值) Limiting Values (Absolute Maximum Rating)
参数名称 Item
反向重复峰值电压 Repetitive Peak Reverse Voltage 正向平均电流 Average Forward Current 正向(不重复)浪涌电流 Surge(Non-repetitive)Forward Current 结温 Junction Temperature 储存温度 Storage Temperature
符号 Symbol
VRRM IF(AV)
单位 Unit
V
测试条件 Test Conditions A
50 正 弦 半 波 60Hz , 电 阻 负 载 , TL=110℃ 60HZ Half-sine wave, Resistance load, TL =110℃ 正弦半波 60Hz, 一个周期, Ta=25℃ 60Hz Half-sine wave ,1 cycle , Ta =25℃
HS1 B
100
D
200
G
400
J
600
K
800
M
1000
A
1.0
IFSM TJ TSTG
A ℃ ℃
30 -55~+150 -55 ~ +150
■电特性 (Ta=25℃ 除非另有规定) Electrical Characteristics (Ta=25℃ Unless otherwise specified)
参数名称 Item
正向峰值电压 Peak Forward Voltage 最大反向恢复时间 Maximum reverse recovery time 反向漏电流 Peak Reverse Current 热阻(典型) Thermal Resistance(Typical)
符号 Symbol
VF trr IRRM1 IRRM2 RθJ-A
单位 Unit
V ns μA
测试条件 Test Condition
IF =1.0A IF=0.5A,IR=1.0A,Irr=0.25A VRM=VRRM Ta =25℃ Ta =100℃
HS1 A B
1.0 50 10 100 751) 271)
D
G
J
1.3
K
1.7 75
M
℃/W RθJ-L
结和环境之间 Between junction and ambient 结和终端之间 Between junction and terminal
备注:Notes:
1)
热阻从结到环境及从结到引线,在电路板的0.2" x 0.2" (5.0毫米 x 5.0毫米)铜垫片区 Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
Document Number 0144 Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
HS1A THRU HS1M
■特性曲线 (典型) Characteristics(Typical)
图1:正向电流降额曲线 FIG.1: FORWARD CURRENT DERATING CURVE
IO(A)
图2:最大正向浪涌冲击耐受力 FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT
IFSM(A) 35
1.0
0.8
30
25
0.6
8.3毫秒正弦半波 8.3ms Single Half Sine Wave JEDEC Method
20
0.4
15
10
0.2 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 0 25 50 75 100 125 150 TL(℃)
5
0
0
1
2
10
20
周波数 100 Number of Cycles
图3: 典型正向特性曲线 FIG.3: TYPICAL FORWARD CHARACTERISTICS
IF(A) TJ=25℃ Pulse width=300us 1% Duty Cycle 10 HS1A-D
图4:典型反向特性曲线 FIG.4:TYPICAL REVERSE CHARACTERISTICS
IR(uA) 1000
100
100 Tj=100℃
1.0
HS1G
10
Tj=25℃
0.1 HS1J-M
1.0
0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF(V)
0.1
0
20
40
60
80
100 Voltage(%)
图 5: 反 向恢复时间试验电路及测试波形示意图 F IG.5: Diagram of circuit and Testing wave form of reverse recovery time
I
D
IF
trr
VR
IF
RL
0 IRR
t
IR
Document Number 0144 Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股份有限公司 Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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