HS3AB THRU HS3MB
Surface Mount High Efficient Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Super fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer and telecommunication.
Mechanical Data
● Package: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
● Polarity: Cathode line denotes the cathode end
■Maximum Ratings (Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL
UNIT
Device marking code
HS3AB HS3BB HS3DB
HS3FB HS3GB
HS3JB
HS3KB HS3MB
HS3AB
HS3BB
HS3DB
HS3FB
HS3GB
HS3JB
HS3KB
HS3MB
50
100
200
300
400
600
800
1000
VRRM
V
IO
A
3.0
Surge(non-repetitive)forward current
@60Hz half-sine wave,1 cycle, Ta=25℃
IFSM
A
100
Storage temperature
Tstg
℃
-55~+150
Junction temperature
Tj
℃
-55~+150
Repetitive peak reverse voltage
Average rectified output current
@60Hz sine wave, resistance load, TL (Fig.1)
■Electrical Characteristics(Ta=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum reverse recovery time
Maximum DC reverse current
at rated DC blocking voltage
per diode @ VRM=VRRM
SYMBOL
UNIT
TEST
CONDITIONS
VF
V
IFM=3.0A
trr
ns
IF=0.5A,IR=1.0A,
Irr=0.25A
IRRM
μA
HS3AB HS3BB HS3DB HS3FB HS3GB HS3JB HS3KB HS3MB
1.0
1.3
50
1.7
75
Ta =25℃
5
Ta =125℃
100
1/5
S-S066
Rev. 2.4, 10-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
HS3AB THRU HS3MB
■Thermal Characteristics (Ta=25℃ Unless otherwise specified)
PARAMETER
SYMBOL
HS3AB
UNIT
HS3BB
HS3DB
HS3FB
RθJ-A(1)
HS3GB
HS3JB
HS3KB
HS3MB
70
℃/W
Typical Thermal resistance
RθJ-L(1)
15
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas
■ Characteristics (Typical)
FIG.2: Forward Surge Current Capability
FIG.1: Io-TL Curve
120
3.0
Peak Forward Surge Current (A)
Average Forward Output Current (A)
3.5
2.5
2.0
1.5
1.0
0
8.3ms Single Half Sine Wave
JEDEC Method
80
60
40
20
Resistive or Inductive Load
P.C.B. Mounted on 0.3"×0.3"
(8.0mm×8.0mm)Copper Pad Areas
0.5
100
0
0
25
75
50
100
125
150
1
10
100
Number of Cycles
Lead Temperature (℃)
FIG.4: Typical Reverse Characteristics
FIG.3: Typical Forward Voltage
100
HS3FB-HS3GB
HS3AB-HS3DB
10
Instantaneous Reverse Current (uA)
Instantaneous Forward Current (A)
100
HS3JB-HS3MB
1.0
0.1
0.01
0.5
0.9
0.7
1.1
1.3
1.5
Instantaneous Forward Voltage (V)
1.7
1.9
10
Ta=125℃
1.0
0.1
Ta=25℃
0.01
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
2/5
S-S066
Rev. 2.4, 10-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
HS3AB THRU HS3MB
FIG.5: Diagram of circuit and Testing wave
form of reverse recovery time
10 Ω
NONINDUCTIVE
50 Ω
NONINDUCTIVE
(-)
DUT
(+)
PULSE
GENERATOR
(NOTE2)
(-)
OSCILLOSCOPE
(NOTE1)
1Ω
NONINDUCTIV
(+)
NOTES:
1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf
2.Rise Time=10ns max.Sourse Impedance=50 Ω
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
5/10ns/cm
■Ordering Information (Example)
PREFERED P/N
PACKING
CODE
UNIT WEIGHT(g)
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
HS3AB-HS3MB
F1
Approximate 0.096
3000
6000
48000
13” reel
HS3AB-HS3MB
F2
Approximate 0.096
750
3000
24000
7” reel
HS3AB-HS3MB
F3
Approximate 0.096
500
2000
16000
7” reel
■ Outline Dimensions
DO-214AA(SMB)
A
DO-214AA(SMB)
B
C
D
F
G
H
Dim
Min
Max
A
1.85
2.15
B
3.30
3.94
C
4.25
4.75
D
1.99
2.61
E
5.21
5.59
F
0.90
1.41
G
0.10
0.20
H
0.15
0.31
E
Dimensions in millimeters
3/5
S-S066
Rev. 2.4, 10-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
HS3AB THRU HS3MB
■ Suggested pad layout
DO-214AA(SMB)
P2
Q2
Q1
P3
Dim
Millimeters
P1
6.8
P2
4.3
P3
1.8
Q1
2.5
Q2
2.3
P1
Dimensions in millimeters
4/5
S-S066
Rev. 2.4, 10-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
HS3AB THRU HS3MB
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
5/5
S-S066
Rev. 2.4, 10-Dec-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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