MURS120-F1-0000HF

MURS120-F1-0000HF

  • 厂商:

    YANGJIE(扬杰科技)

  • 封装:

    DO-214AC

  • 描述:

    DIODE GEN PURP 200V 1A DO214AC

  • 数据手册
  • 价格&库存
MURS120-F1-0000HF 数据手册
RoHS MURS120 THRU MURS160  COMPLIANT   Surface Mount Super Fast Recovery Rectifier Features ● Low profile package ● Ideal for automated placement ● Glass passivated chip junction ● High forward surge capability ● Super Fast reverse recovery time ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications For use in high frequency rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, and telecommunication. Mechanical Data ● Package: DO-214AC(SMA) Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Cathode line denotes the cathode end ■Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT Device marking code MURS120 MURS140 MURS160 MURS120 MURS140 MURS160 Maximum Repetitive Peak Reverse Voltage VRRM V 200 400 600 Maximum RMS Voltage VRMS V 140 280 420 Maximum DC blocking Voltage VDC V 200 400 600 IO A IFSM A Average rectified output current @60Hz sine wave, resistance load, TL (Fig.1) Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ 1.0 30 Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ 60 Current squared time @1ms≤t≤8.3ms Tj=25℃,Rating of per diode Typical junction capacitance @Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C 2 It 2 As Cj pF Storage temperature Tstg ℃ -55 ~ +150 Junction temperature Tj ℃ -55 ~ +150 3.735 17 15 14 1/6 S-S1208 Rev.1.5,13-Apr-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com MURS120 THRU MURS160    ■Electrical Characteristics(Ta=25℃ Unless otherwise specified) SYMBOL UNIT TEST CONDITIONS MURS120 Maximum instantaneous forward voltage drop per diode VF V IFM=1.0A 0.92 1.25 Maximum reverse recovery time TRR ns IF=0.5A,IR=1.0A, Irr=0.25A 25 50 Maximum DC reverse current at rated DC blocking voltage per diode IR μA PARAMETER MURS140 Tj =25℃ 5.0 Tj =125℃ 50 MURS160 ■Dynamic Characteristics  MURS120 PARAMETER SYMBOL Min Typ Max - 28 - - 19 - - 25 - - 2.6 - - 4.0 - Tj=25℃ - 24.6 - Tj=125℃ - 52.3 - 14.7 - - Min Typ Max - 26 - Tj=25℃ - 22 - Tj=125℃ -  31 -  - 1.9 - - 3.5 - Tj=25℃ - 21.1 - Tj=125℃ - 54.9 - 1.2 - - Min Typ Max - 49 - Tj=25℃ -  38 -  Tj=125℃ -  59 -  - 3.5 - - 5.5 - Tj=25℃ - 67.4 - Tj=125℃ - 160.5 - 1.9 - - UNIT TEST CONDITIONS IF=1A,di/dt=-50A/us VRM=30V Tj=25℃ Reverse Recovery Time TRR ns Tj=25℃ Tj=125℃ Peak recovery current Reverse recovery charge Non-repetitive avalanche energy  IF=1A di/dt=-200A/us VRM=100V Tj=25℃ IRRM A Qrr nC EAS mJ SYMBOL UNIT Tj=125℃ Tj=25℃ IR=1.4 A,L=15 mH MURS140 PARAMETER TEST CONDITIONS IF=1A,di/dt=-50A/us VRM=30V Tj=25℃ Reverse Recovery Time Peak recovery current Reverse recovery charge Non-repetitive avalanche energy  TRR ns IF=1A di/dt=-200A/us VRM=200V Tj=25℃ IRRM A Qrr nC EAS mJ SYMBOL UNIT Tj=125℃ Tj=25℃ IR=0.4A,L=15 mH MURS160 PARAMETER TEST CONDITIONS IF=1A,di/dt=-50A/us VRM=30V Tj=25℃ Reverse Recovery Time Peak recovery current Reverse recovery charge Non-repetitive avalanche energy TRR ns Tj=25℃ IRRM A Qrr nC EAS mJ Tj=125℃ Tj=25℃ IF=1A di/dt=-200A/us VRM=400V IR=0.5A,L=15 mH 2/6 S-S1208 Rev.1.5,13-Apr-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com MURS120 THRU MURS160    ■Thermal Characteristics (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL MURS120 UNIT MURS140 RθJ-A(1) 70 RθJ-L(1) Typical Thermal resistance MURS160 ℃/W 22 RθJ-C(1) 20 Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ■ Characteristics (Typical) FIG.1: Io-TL Curve FIG.2: Forward Surge Current Capadility 30 1.2 Peak Forward Surge Current (A) Average Forward Output Current (A) 1.4 1.0 0.8 0.6 0.4 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 0.2 0 0 25 50 25 8.3ms Single Half Sine Wave 20 15 10 5 75 100 125 0 150 1 10 Lead Temperature (℃) FIG.4: Typical Reverse Characteristics FIG.3: Typical Forward Voltage 100 100 MURS140 MURS120 10 Instantaneous Reverse Current (uA) Instantaneous Forward Current(A) 100 Number of Cycles MURS160 1.0 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Instantaneous Forward Voltage(V) Tj=125℃ 10 1.0 Tj=25℃ 0.1 0.01 0.001 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) 3/6 S-S1208 Rev.1.5,13-Apr-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com MURS120 THRU MURS160    FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 10 Ω NONINDUCTIVE 50 Ω NONINDUCTIVE trr +0.5A (-) DUT (+) 0 PULSE GENERATOR (NOTE2) (-) OSCILLOSCOPE (NOTE1) 1Ω NONINDUCTIVE -0.25A (+) -1.0A NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50Ω 1cm SET TIME BASE FOR 5/10ns/cm ■Ordering Information (Example) PREFERED P/N PACKAGE CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE MURS120MURS160 F1 Approximate 0.059 5000 10000 80000 13” reel MURS120MURS160 F2 Approximate 0.059 7500 15000 120000 13” reel MURS120MURS160 F3 Approximate 0.059 7500 15000 60000 13” reel MURS120MURS160 F4 Approximate 0.059 1800 14400 57600 7” reel MURS120MURS160 F5 Approximate 0.059 2000 16000 64000 7” reel MURS120MURS160 F6 Approximate 0.059 5000 10000 100000 13” reel ■ Outline Dimensions DO-214AC(SMA) A DO-214AC(SMA) B C D F G H Dim Min Max A 1.25 1.58 B 2.40 2.83 C 4.06 4.75 D 1.90 2.30 E 4.93 5.28 F 0.76 1.41 G 0.08 0.20 H 0.15 0.31 E Dimensions in millimeters 4/6 S-S1208 Rev.1.5,13-Apr-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com MURS120 THRU MURS160    ■Suggested Pad Layout DO-214AC(SMA) P3 P2 Q2 Q1 Dim Millimeters P1 4.00 P2 1.50 P3 6.50 Q1  2.50 Q2  1.70 P1 Dimensions in millimeters 5/6 S-S1208 Rev.1.5,13-Apr-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com MURS120 THRU MURS160    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 6/6 S-S1208 Rev.1.5,13-Apr-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com
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