SF56G

RoHS SF51G THRU SF58G  COMPLIANT   Super Fast Recovery Rectifier Features ● Ultrafast reverse recovery time ● Low leakage current ● Low switching losses, high efficiency ● High forward surge capability ● Glass passivated chip junction ● Solder dip 275 °C max. 7 s, per JESD 22-B106 Typical Applications For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer and telecommunication. Mechanical Data ● Package: DO-201AD(DO-27) Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 ● Polarity: Color band denotes the cathode end　 ■Maximum Ratings (Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Device marking code SF51G SF52G SF53G SF54G SF55G SF56G SF57G SF58G SF51G SF52G SF53G SF54G SF55G SF56G SF57G SF58G Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 300 400 500 600 Maximum RMS Voltage VRMS V 35 70 105 140 210 280 350 420 Maximum DC blocking Voltage VDC V 50 100 150 200 300 400 500 600 Average Forward Current @60Hz sine wave, Resistance load, Ta =60℃ IF(AV) A IFSM A Forward Surge Current (Non-repetitive) @60Hz Half-sine wave,1 cycle, Tj=25℃ 5.0 150 Forward Surge Current (Non-repetitive) @1ms, square wave, 1 cycle, Tj=25℃ 250 Current squared time @1ms≤t8.3≤ms Tj=25℃，Rating of per diode I2t A2s Typical junction capacitance @Measured at 1MHz and Applied Reverse Voltage of 4.0 V.D.C Cj pF Storage Temperature Tstg ℃ -55 ~ +150 Junction Temperature Tj ℃ -55 ~ +150 94 80 46 30 ■Electrical Characteristics（Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT TEST CONDITIONS Maximum instantaneous forward voltage drop per diode VF V IFM=5.0A Maximum DC reverse current at rated DC blocking voltage per diode IR μA Maximum reverse recovery time trr ns SF51G SF52G SF53G SF54G SF55G 0.95 SF56G 1.3 Tj =25℃ 2.5 Tj =125℃ 100 IF=0.5A,IR=1.0A, Irr=0.25A 35 SF57G SF58G 1.7 1/4 S-A159 Rev.2.2, 30-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com SF51G THRU SF58G    ■Thermal Characteristics （Ta=25℃ Unless otherwise specified） PARAMETER SYMBOL UNIT Typical Thermal Resistance RθJ-A ℃/W SF51G SF52G SF53G SF54G SF55G SF56G SF57G SF58G 15 ■Ordering Information (Example) PREFERED P/N PACKAGE CODE UNIT WEIGHT(g) MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE SF51G~SF58G D1 Approximate 1.05 1250 1250 12500 Tape SF51G~SF58G C1 Approximate 1.05 250 250 12500 Bulk ■ Characteristics(Typical) FIG.1: Io-Ta Curve FIG.2: Forward Surge Current Capability Peak Forward Surge Current (A) 150 4 3 2 S ingle Phase Half Wave 60HZ Resistive or Inductive Load 0.375''(9.5mm) Lead Length 1 Average Forward Output Current (A) 5 0 50 8.3ms Single Half Sine Wave JEDEC Method 90 60 30 0 0 0 1 0 120 1 150 100 2 Instantaneous Reverse Current (uA) Instantaneous Forward Current (A) SF55G-SF56G SF57G-SF58G 1.0 0.01 0.6 TJ=25℃ Pulse width=300us 1% Duty Cycle 0.8 1.0 1.2 1.4 1.6 20 40 60 80 100 100 100 0.1 8 10 FIG.4: Typical Reverse Characteristics FIG.3: Forward Voltage 10 6 Number of Cycles Ambient Temperature (℃) SF51G-SF54G 4 1.8 Tj=125℃ 10 Tj=100℃ 1.0 0.01 0.001 2.0 Instantaneous Forward Voltage (V) Tj=25℃ 0.1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) 2/4 S-A159 Rev.2.2, 30-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com SF51G THRU SF58G    FIG.5: Diagram of circuit and Testing wave form of reverse recovery time 10 Ω NONINDUCTIVE 50 Ω NONINDUCTIVE trr +0.5A (-) (+) DUT 0 PULSE GENERATOR (NOTE2) (-) 1Ω NONINDUCTIVE OSCILLOSCOPE (NOTE1) -0.25A (+) NOTES: 1.Rise Time=7ns max .Inpot Impedance=1M Ω 22pf 2.Rise Time=10ns max.Sourse Impedance=50 Ω -1.0A 1cm SET TIME BASE FOR 5/10ns/cm ■ Outline Dimensions DO-201AD(DO-27) DO-201AD(DO-27) Dim Min Max A 8.50 9.50 B C 5.00 5.60 25.4 / D 1.20 1.30 Dimensions in millimeters 3/4 S-A159 Rev.2.2, 30-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com SF51G THRU SF58G    Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 4/4 S-A159 Rev.2.2, 30-Jan-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com