SMBJ6.5CA

扬州杰利半导体有限公司 Semiconductor CO., LTD TVS 芯片（平面低压系列产品） 一、芯片特征： 1.平面工艺 2.超低反向漏电 3.芯片表面两面蒸镀Ti/Ni/Ag 二、芯片结构 截面图 正视图 三、产品型号及规格： 1.200W Part Number Dice Scale (A) Scale (B) mil Reverse stand-off Scale Voltage (C) um Breakdown voltage VBR@IT Test Curren t IT VRWM Min Max V V V Reverse Leakage IR@VRWM Max Clamp Voltage Peak Pulse Current Vc@Ipp Ipp UNI BI mA uA uA V A UNI BI mil SMFJ5.0A SMFJ5.0CA 47±2 35±1 320±20 5.0 6.40 7.07 10 100 100 9.2 21.7 SMFJ6.0A SMFJ6.0CA 47±2 35±1 320±20 6.0 6.67 7.37 10 100 100 10.3 19.4 / SMFJ6.5CA 47±2 35±1 320±20 6.5 7.22 7.98 10 100 100 11.2 17.9 P2KE6.8A P2KE6.8CA 47±2 35±1 320±20 5.8 6.45 7.14 10 100 100 10.5 19.0 / P2KE7.5CA 47±2 35±1 320±20 6.4 7.13 7.88 10 100 100 11.3 17.6 Max Clamp Voltage Peak Pulse Current Vc@Ipp Ipp 2.400W Part Number UNI SMAJ5.0A SMAJ6.0A BI Dice Scale (A) Scale (B) Reverse Scale stand-off Voltage (C) Max V V V 5.0 6.40 6.0 320±20 60± 48± 320±20 2/70±2 1/58±1 UNI/BI UNI/BI um P4KE6.8A P4KE6.8CA / P4KE7.5CA 60±2 60±2 48±1 48±1 320±20 Test Curren t IT Min 60± 48± 320±20 2/70±2 1/58±1 60± 48± SMAJ6.0CA 320±20 2/70±2 1/58±1 SMAJ6.5CA VBR@IT VRWM SMAJ5.0CA / Breakdown voltage Reverse Leakage IR@VRWM UNI BI mA uA uA V A 7.07 10 100 100 9.2 43.5 6.67 7.37 10 100 100 10.3 38.8 6.5 7.22 7.98 10 100 100 11.2 35.7 5.8 6.45 7.14 10 100 100 10.5 38.1 6.4 7.13 7.88 10 100 100 11.3 36.3 3.600W Part Number Dice Scale (A) Scale (B) mil Reverse Scale stand-off Voltage (C) um Breakdown voltage VBR@IT Test Curren t IT VRWM Min Max V V V Reverse Leakage IR@VRWM Max Clamp Voltage Peak Pulse Current Vc@Ipp Ipp UNI BI mA uA uA V A UNI BI mil SMBJ5.0A SMBJ5.0CA 79±2 64±1 320±20 5.0 6.40 7.07 10 100 100 9.2 65.2 SMBJ6.0A SMBJ6.0CA 79±2 64±1 320±20 6.0 6.67 7.37 10 100 100 10.3 58.3 / SMBJ6.5CA 79±2 64±1 320±20 6.5 7.22 7.98 10 100 100 11.2 53.6 P6KE6.8A P6KE6.8CA 79±2 64±1 320±20 5.8 6.45 7.14 10 100 100 10.5 57.1 / P6KE7.5CA 79±2 64±1 320±20 6.4 7.13 7.88 10 100 100 11.3 54.0