YJB150G06AK

RoHS YJB150G06AK COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS 60V ● ID (Silicon limited) 150A ● RDS(ON)( at VGS=10V) ＜3.5 mohm ● RDS(ON)( at VGS=4.5V) ＜5.0 mohm ● 100% UIS Tested ● 100% ▽VDS Tested ● ESD Protected up to 2.0KV(HBM) General Description ● Split Gate Trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● Synchronous Rectification ● Battery Protection Circuit ● Motor drivers and Uninterruptible Power Supplies ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 60 V Gate-source Voltage VGS ±20 V 150 TC=25℃ Drain Current (Silicon limited) A ID 95 TC=100℃ Pulsed Drain Current A Avalanche energy B IDM 450 A EAS 441 mJ 147 Tc=25℃ Total Power Dissipation C PD W 59 Tc=100℃ Junction and Storage Temperature Range TJ ,TSTG ℃ -55～+150 ■Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Typ Max 12 15 48 60 0.7 0.85 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State RθJC ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJB150G06AK F2 YJB150G06AK 800 / 8000 13“ reel 1/6 S-E149 Rev.1.0,28-Jul-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB150G06AK ■ Electrical Characteristics (Tj=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.7 2.5 V VGS= 10V, ID=20A 2.7 3.5 mΩ Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=20A 3.5 4.8 mΩ IS=20A,VGS=0V 0.8 1.3 V 150 A Static Parameter Gate-Body Leakage Current Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Gate resistance RG 1.0 f= 1 MHz, Open drain V 2.0 Ω Dynamic Parameters 4650 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 65 Total Gate Charge Qg 71 Gate-Source Charge Qgs Gate-Drain Charge Qgd Reverse Recovery Chrage Qrr VDS=30V,VGS=0V,f=1MHZ 850 pF Switching Parameters VGS=10V,VDS=30V,ID=25A 17 nC 10.5 39.8 IF=20A, di/dt=500A/us Reverse Recovery Time trr 41.6 Turn-on Delay Time tD(on) 15.9 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time A. B. C. D. VGS=10V,VDD=30V,ID=25A RGEN=2Ω tf 55.2 ns 57.5 91.3 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH, IAS=42A. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2/6 S-E149 Rev.1.0,28-Jul-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB150G06AK ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. : On-Resistance vs. Drain Current and Gate Voltage Figure6.Normalized On-Resistance 3/6 S-E149 Rev.1.0,28-Jul-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB150G06AK Figure7. Drain current Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance 4/6 S-E149 Rev.1.0,28-Jul-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB150G06AK ■ TO-263-HY Package information 5/6 S-E149 Rev.1.0,28-Jul-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB150G06AK Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 6/6 S-E149 Rev.1.0,28-Jul-21 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com