YJB30GP10A

RoHS YJB30GP10A COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested -100V -30A ＜56 mohm ＜62 mohm General Description ● Split gate trench MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) Applications ● DC-DC Converters ● Power management functions ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS -100 V Gate-source Voltage VGS ±20 V Tc=25℃ -30 Drain Current ID A Tc=100℃ -19.2 Pulsed Drain Current A IDM -120 A Avalanche energy B EAS 162 mJ Tc=25℃ Total Power Dissipation 125 C PD W Tc=100℃ 50 Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Typ Max 12 15 50 60 0.8 1.0 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State RθJC ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJB30GP10A F2 YJB30GP10A 800 / 8000 13“ reel 1/6 S-E132 Rev.3.4,10-Dec-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB30GP10A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min BVDSS VGS= 0V, ID=-250μA -100 Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current VDS=-100V,VGS=0V TJ=25℃ -1 TJ=55℃ -5 TJ=125℃ -10 IGSS VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage VSD Maximum Body-Diode Continuous Current V μA ±100 nA -1.8 -2.5 V VGS= -10V, ID=-15A 42 56 VGS= -4.5V, ID=-7A 46 62 -1.0 mΩ IS=-15A,VGS=0V IS -1.3 V -30 A Dynamic Parameters Input Capacitance Ciss 2100 Output Capacitance Coss Reverse Transfer Capacitance Crss 48 Total Gate Charge Qg(-10V) 40 Total Gate Charge Qg(-4.5V) VDS=-50V,VGS=0V,f=1MHZ 236 pF Switching Parameters 19.4 VGS=-10V,VDS=-50V,ID=-5A Gate-Source Charge Qgs 7.8 Gate-Drain Charge Qgd 8.6 Reverse Recovery Chrage Qrr nC 280 IF=-5A, di/dt=100A/us Reverse Recovery Time trr 104 Turn-on Delay Time tD(on) 13 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time A. B. C. D. VGS=-10V,VDD=-50V,IDS=-5A RGEN=6Ω tf 39 ns 100.1 105.3 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2/6 S-E132 Rev.3.4,10-Dec-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB30GP10A ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. : On-Resistance vs. Gate to Source Voltage Figure6.Normalized On-Resistance 3/6 S-E132 Rev.3.4,10-Dec-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB30GP10A Figure7. Drain current Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance 4/6 S-E132 Rev.3.4,10-Dec-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB30GP10A ■ TO-263 Package information 5/6 S-E132 Rev.3.4,10-Dec-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJB30GP10A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 6/6 S-E132 Rev.3.4,10-Dec-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com