RoHS
YJD100G10A
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
● ID
● RDS(ON)( at VGS=10V)
● 100% UIS Tested
● 100% ▽VDS Tested
100 V
100 A
<8.0 mohm
General Description
● Low RDS(on) & FOM
● Extremely low switching loss
● Excellent stability and uniformity
● Fast switching and soft recovery
Applications
● Consumer electronic power supply
● Motor control
● Synchronous-rectification
● Isolated DC/DC convertor
● Invertors
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source Voltage
VDS
100
V
Gate-source Voltage
VGS
±20
V
Drain Current A
TC=25℃
ID
100
A
Pulsed Drain Current B
TC=25℃
IDM
300
A
EAS
130
mJ
PD
121
W
Thermal Resistance, junction-ambient E
RθJA
62
℃/ W
Thermal Resistance, junction-case
RθJC
1.03
℃/ W
TJ ,TSTG
-55~+150
℃
Avalanche energy C
Total Power Dissipation D
Tc=25℃
Junction and Storage Temperature Range
■ Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
YJD100G10A
F2
YJD100G10A
2500
2500
25000
13“ reel
1/6
S-S2045
Rev.2.0,25-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJD100G10A
■ Electrical Characteristics (TJ=25℃ unless otherwise noted)
Parameter
Symbol
Conditions
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
BVDSS
VGS= 0V, ID=250μA
100
Zero Gate Voltage Drain Current
IDSS
VDS=100V,VGS=0V
1
μA
IGSS
VGS= ±20V, VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS= VGS, ID=250μA
1.8
2.3
V
Static Drain-Source On-Resistance
RDS(ON)
VGS= 10V, ID=12A
6.5
8.0
mΩ
VSD
IS=30A,VGS=0V
1.3
V
100
A
Static Parameter
Gate-Body Leakage Current
Diode Forward Voltage
Maximum Body-Diode Continuous Current
1.3
V
IS
Dynamic Parameters
Input Capacitance
Ciss
3530
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
9.0
Total Gate Charge
Qg
60.7
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Reverse Recovery Chrage
Qrr
VDS=50V,VGS=0V,f=1MHZ
560
pF
Switching Parameters
VGS=10V,VDS=50V,ID=10A
7.2
nC
14.6
160
IF=10A, di/dt=100A/us
Reverse Recovery Time
trr
67
Turn-on Delay Time
tD(on)
22.5
Turn-on Rise Time
tr
8.6
ns
VGS=10V,VDD=50V,ID=10A
Turn-off Delay Time
Turn-off fall Time
A.
B.
C.
D.
E.
tD(off)
66.6
tf
42.1
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
VDD=50V, RG=50Ω, L=0.3mH, starting TJ=25 ℃.
PD is based on max. junction temperature, using junction-case thermal resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 °C.
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S-S2045
Rev.2.0,25-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJD100G10A
■ Typical Performance Characteristics
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure3. Capacitance Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
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S-S2045
Rev.2.0,25-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJD100G10A
Figure7. Drain-source breakdown voltage
Figure8.Safe Operation Area
4/6
S-S2045
Rev.2.0,25-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJD100G10A
■ TO-252 Package information
5/6
S-S2045
Rev.2.0,25-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJD100G10A
Disclaimer
The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the
right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design
or otherwise.
The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with
equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as
medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety
devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use
of sale.
This publication supersedes & replaces all information previously supplied. For additional information, please visit our website
http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.
6/6
S-S2045
Rev.2.0,25-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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