YJD18GP10A

RoHS YJD18GP10A COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) ● 100% UIS Tested ● 100% ▽VDS Tested -100V -18A ＜90 mohm ＜110 mohm General Description ● Split gate trench MOSFET technology ● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity Applications ● Power management ● Portable equipment ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS -100 V Gate-source Voltage VGS ±20 V -18 Tc=25℃ Drain Current ID A -12 Tc=100℃ Pulsed Drain Current A IDM -72 A Avalanche energy B EAS 100 mJ 72 Tc=25℃ Total Power Dissipation PD W 28.8 Tc=100℃ Junction and Storage Temperature Range TJ ,TSTG ℃ -55～+150 ■Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State Typ Max 15 20 40 50 1.35 1.7 Units RθJA RθJC ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJD18GP10A F1 YJD18GP10A 2500 2500 250000 13“ reel 1/6 S-E083 Rev.3.4,10-Mar-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD18GP10A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min BVDSS VGS= 0V, ID=-250μA -100 Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS VDS=-100V,VGS=0V Tj=25℃ -1 Tj=55℃ -5 Tj=125℃ -10 IGSS VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA Static Drain-Source On-Resistance RDS(ON) Gate-Body Leakage Current Diode Forward Voltage VSD Maximum Body-Diode Continuous Current V μA ±100 nA -1.8 -2.5 V VGS= -10V, ID=-10A 75 90 VGS= -4.5V, ID=-5A 85 110 -1.0 mΩ IS=-10A,VGS=0V IS -1.3 V -18 A Dynamic Parameters Input Capacitance Ciss 1051 Output Capacitance Coss Reverse Transfer Capacitance Crss 25 Total Gate Charge Qg(-10V) 20.1 Total Gate Charge Qg(-4.5V) VDS=-50V,VGS=0V,f=1MHZ 119 pF Switching Parameters 9.7 VGS=-10V,VDS=-50V,ID=-5A Gate-Source Charge Qgs 3.9 Gate-Drain Charge Qgd 4.3 Reverse Recovery Chrage Qrr nC 140 IF=-5A, di/dt=100A/us Reverse Recovery Time trr 70 Turn-on Delay Time tD(on) 10 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time A. B. C. D. VGS=-10V,VDD=-50V,RL=2.5Ω RGEN=6Ω tf 30 ns 77 81 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2/6 S-E083 Rev.3.4,10-Mar-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD18GP10A ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. : On-Resistance vs. Gate to Source Voltage Figure6.Normalized On-Resistance 3/6 S-E083 Rev.3.4,10-Mar-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD18GP10A Figure7. Drain current Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance 4/6 S-E083 Rev.3.4,10-Mar-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD18GP10A ■ TO-252 Package information 5/6 S-E083 Rev.3.4,10-Mar-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJD18GP10A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 6/6 S-E083 Rev.3.4,10-Mar-20 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com