YJG40GP06A

RoHS YJG40GP06A COMPLIANT P-Channel Enhancement Mode Field Effect Transistor Product Summary ● VDS ● ID ● RDS(ON)( at VGS=-10V) ● RDS(ON)( at VGS=-4.5V) ● 100% EAS Tested ● 100% ▽VDS Tested -60V -40A ＜25 mohm ＜30 mohm General Description ● Split gate trench MOSFET technology ● Low RDS(on) & FOM ● Low Crss ● Extremely low switching loss ● Excellent stability and uniformity ● Moisture Sensitivity Level 1 ● Epoxy Meets UL 94 V-0 Flammability Rating ● Halogen Free Applications ● Load Switch ● Industrial DC/DC Conversion Circuits ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Drain-source Voltage VDS -60 V Gate-source Voltage VGS ±20 V Tc=25℃ -40 Drain Current ID A Tc=100℃ Pulsed Drain Current Unit -25 A Avalanche energy B IDM -160 A EAS 256 mJ Tc=25℃ 88 Total Power Dissipation C PD W Tc=100℃ 35.2 Junction and Storage Temperature Range TJ ,TSTG ℃ -55～+150 ■Thermal resistance Parameter Symbol Thermal Resistance Junction-to-Ambient D t≤10S Typ Max 15 20 40 50 1.15 1.42 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State RθJC ℃/W ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE YJG40GP06A F1 YJG40GP06A 5000 10000 100000 13“ reel 1/6 S-E179 Rev.1.1,24-Oct-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG40GP06A ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -60 Zero Gate Voltage Drain Current IDSS Typ Max Units Static Parameter TJ=25℃ -1 TJ=55℃ -5 μA VDS=-60V,VGS=0V IGSS VGS= ±20V, VDS =0V Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA Static Drain-Source On-Resistance RDS(ON) Gate-Body Leakage Current V ±100 nA -1.8 -2.5 V VGS= -10V, ID=-20A 16 25 VGS= -4.5V, ID=-10A 23 30 -1.3 mΩ Gate Resistance Rg f=1MHz 6 Diode Forward Voltage VSD IS=-20A,VGS=0V -0.85 Maximum Body-Diode Continuous Current IS Ω -1.3 V -40 A Dynamic Parameters Input Capacitance Ciss 2200 Output Capacitance Coss Reverse Transfer Capacitance Crss 56 Total Gate Charge Qg(-10V) 37.5 Total Gate Charge Qg(-4.5V) VDS=-30V,VGS=0V,f=1MHZ 700 pF Switching Parameters 17.4 VGS=-10V,VDS=-30V,ID=-20A Gate-Source Charge Qgs 8.8 Gate-Drain Charge Qgd 7.1 Reverse Recovery Chrage Qrr nC 22.3 IF=-20A, di/dt=100A/us Reverse Recovery Time trr 33.2 Turn-on Delay Time tD(on) 9.9 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time A. B. C. D. VGS=-10V,VDD=-30V,RL=2.5Ω RGEN=6Ω tf 39.2 ns 72.5 64.7 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=2mH, IAS=16A. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2/6 S-E179 Rev.1.1,24-Oct-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG40GP06A ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. : On-Resistance vs. Gate to Source Voltage Figure6.Normalized On-Resistance 3/6 S-E179 Rev.1.1,24-Oct-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG40GP06A Figure7. Normalized Gate Threshold Voltage Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance 4/6 S-E179 Rev.1.1,24-Oct-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG40GP06A L2 ■ PDFN5060-8L-B-1.1MM Package information D D2 D1 A E3 L1x4 E4 E E2 E1 A1 e Bottom View 背面视图 Top View 正面视图 MILLIMETER NOM 5.35 6.15 1.10 0.254 BSC D1 E1 3.92 3.52 4.12 3.72 4.32 3.92 D2 5.00 5.20 5.40 E2 5.66 5.86 6.06 D E A A1 4.52 0.76 Side View 侧面视图 MIN 5.15 5.95 1.00 SYMBOL 0.50 A2 bx8 0.10 6.25 3.97 1.34 A2 E3 0.254 REF 0.21 REF E4 L1 0.56 L2 0.51 1.27 e 0.76 1.02 b Suggested Solder Pad Layout Top View MAX 5.55 6.35 1.20 0.66 0.76 0.50 BSC 0.31 0.41 0.51 1.27 BSC Note: 1.Controlling dimension:in millimeters. 2.General tolerance:±0.10mm. 3.The pad layout is for reference purposes only. 5/6 S-E179 Rev.1.1,24-Oct-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com YJG40GP06A Disclaimer The information presented in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from such improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance. 6/6 S-E179 Rev.1.1,24-Oct-23 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com